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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 黃建璋 | |
dc.contributor.author | Li-Chuan Huang | en |
dc.contributor.author | 黃莉琄 | zh_TW |
dc.date.accessioned | 2021-06-16T16:06:47Z | - |
dc.date.available | 2014-06-21 | |
dc.date.copyright | 2013-06-21 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2013-06-13 | |
dc.identifier.citation | Chapter One
[1] J. Ryou, P. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. Kim, and R. Dupuis, “Control of quantum-confined Stark effect in InGaN-based quantum wells,” IEEE J. Sel. Topics Quantum Electron. 15(4), 1080–1091( 2009). [2] Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Topics Quantum Electron. 15(4), 1137–1143 (2009). [3] M.-Y. Hsieh, C.-Y. Wang, L.-Y. Chen, M.-Y. Ke and J. Huang, “InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks,” IEEE J. Quantum Electron. 44(5),468-472 (2008). [4] C.-Y. Wang, L.-Y. Chen, C.-P. Chen, Y.-W. Cheng, M.-Y. Ke, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng and J. Huang , “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549-56 (2008). [5] Y.-J. Lee, S.-Y. Lin, C.-H. Chiu, T.-C. Lu, H.-C. Kuo, S.-C. Wang, S. Chhajed, J. K. Kim and E. F. Schubert, “ High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111-3 (2009). Chapter Two [1] M. D. Drory, J. W. Ager, T. Suski, I. Grzegory and S. Porowski, “Hardness and fracture toughness of bulk single crystal gallium nitride,” Appl. Phys. Lett. 69(26) , 4044-4406 (1996). [2] J. F. Shackelford and W. Alexander, “Materials Science and Engineering Handbook,” Third Edition: CRC Press, 474 (2010). [3] C. Chiu, T. Lu, H. Huang, C. Lai, C. Kao, J. Chu, C. Yu, H. Kuo, S. Wang and C. Lin, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007). [4] M.-Y. Hsieh, C.-Y. Wang, L.-Y. Chen, M.-Y. Ke and J. J. Huang, “InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks,” IEEE J. Quantum Electron. 44(5),468-472 (2008). [5] A. Kikuchi, M. Tada, K. Miwa and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Edited by Eyink, Kurt G.; Huffaker, Diana L. Proceedings of the SPIE 6129, 36-43 (2006). [6] H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang and K. S. Chung, “High-Brightness Light Emitting Diodes Using Dislocation-Free InGaN/GaN Multiquantum-Well Nanorod Arrays,” 17 Nano letters 4(6), 1059-1062 (2004). [7] Y.-J. Lee, S.-Y. Lin, C.-H. Chiu, T.-C. Lu, H.-C. Kuo, S.-C. Wang, S. Chhajed, J. K. Kim and E. F. Schubert, “ High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111-3 (2009). [8] C.-Y. Wang, L.-Y. Chen, C.-P. Chen, Y.-W. Cheng, M.-Y. Ke, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng and J. J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549-56 (2008). Chapter Three [1] A. G. Kontos, Y. S. Raptis, N. T. Pelekanos, A. Georgakilas, E. Bellet-Amalric, and D. Jalabert, “Micro-Raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures,” Phys. Rev. B 72(15), 155336 (2005). [2] L. Y. Chen, H. H. Huang, C. H. Chang, Y. Y. Huang, Y. R. Wu and J. J. Huang, “Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays,”Opt. Express 19(S4), A907 (2011). [3] H. Chang, Y. Hsieh, T. Chen, Y. Chen, C. Liang, T. Lin, S. Tseng and L. Chen, “Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters,” Opt. Express 15(15), 9357-9365 (2007). [4] A. Link, K. Bitzer, W. Limmer, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, D. G. Ebling and K.W. Benz, “ Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN,” J. Appl. Phys. 86(11), 6256 (1999). [5] T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amaro, and I. Akasaki, “Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997). 30 [6] Wu Y.R., Singh M. and Singh J. , “ Sources of transconductance collapse in III–V nitrides—Consequences of velocity-field relations and source/gate design,” IEEE Trans. Electron Devices 521048–1054 (2005). [7] Vasileska D. and Goodnick S. M., Computational Electronics.San Rafael, CA: Morgan and Claypool (2006). [8] Y. R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94(9), 5826–5831 (2003). Chapter Four [1] M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek and Y. Park, “ Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007). [2] M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007). [3] Y.-H. Sun, Y.-W. Cheng, S.-C. Wang, Y.-Y. Huang, C.-H. Chang, S.-C. Yang, L.-Y. Chen, M.-Y. Ke, C.-K. Li, Y.-R. Wu and J. J. Huang, “Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing,” IEEE Electron Device Letters 32(2), 182-4 (2011). [4] I. Rozhansky and D. Zakheim, “Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping,” physica status solidi (c) 3(6), 2160-2164 (2006). [5] I. Rozhansky and D. Zakheim, “ Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping,” physica status solidi (a) 204(1), 227-230 (2007). 41 [6] H. J. Chang, Y. P. Hsieh, T. T. Chen, Y. F. Chen, C. T. Liang, T. Y. Lin, S. C. Tseng and L. C. Chen, “ Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters,” Opt. Express 15(15), 9357-65 (2007). [7] H. Chen, D. Yeh, Y. Lu, C. Chen, C. Huang, T. Tang, C. Yang and C. Wu, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17, 1454-1458 (2006). [8] S. Feng, Y. Cheng, Y. Chung, C. Yang, Y. Lin, C. Hsu, K. Ma and J. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441 (2002). [9] M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies and P. Gibart “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721 (1999). Chapter Five [1] S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InGaN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906–4908 (2003). [2] C. E. Martinez, N. M. Stanton, A. J. Kent, D. M. Graham, P. Dawson, M. J. Kappers, and C. J. Humphreys, “Determination of relative internal quantum efficiency in InGaN/GaN quantum wells,” J. Appl. Phys. 98(5), 053509 (2005). [3] Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Topics Quantum Electron. 15(4), 1137–1143 (2009). [4] S. Feng, Y. Cheng, Y. Chung, C. Yang, Y. Lin, C. Hsu, K. Ma and J. Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” J. Appl. Phys. 92(8), 4441 (2002). [5] M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies and P. Gibart “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721 (1999). [6] Shen, Y., G. Mueller, S. Watanabe, N. Gardner, A. Munkholm and M. 53 Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007). [7] R. Windisch, P. Heremans, A. Knobloch, P. Kiesel, G. H. Du hler, . Dutta and G. orghs, “Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes,” Appl. Phys. Lett. 74(16), 2256–2258 (1999). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62659 | - |
dc.description.abstract | 近年來,由於氮化鎵其良好的特性,被廣泛的應用於短波長的發光元件。目前有許多研究團隊提出各式各樣的奈米結構技術來提升效率,而其中又以奈米柱發光二極體最受矚目。在本篇論文中,我們提出一種具實用價值之奈米小球微影術用以製作具有p-i-n結構之奈米柱陣列發光二極體元件並分析其特性,亦藉由拉曼量測證實奈米柱元件可有效地釋放發光層間的壓縮應力。
目前在一般的研究上,常用來定義發光二極體內部量子效率的方法主要是做低溫光致發光(photoluminescence)量測,通常假設當環境溫度非常低(接近0K)的時候,進行非輻射復合的載子數量會趨近於零,幾乎全部的載子都會進行輻射複合,因此定義此時的內部量子效率為100%。但是在我們低溫光致發光、低溫電致發光(electroluminescence)及低溫拉曼量測結果中發現,當溫度逐漸下降,每個元件缺陷逐漸被排除同時卻也伴隨著承受比室溫下更多的壓縮應力,因此我們提出了一個嶄新的模組來分析內部量子效率,此法不同於以往對於低溫的光致發光結果只歸因於缺陷的抑制,更將低溫下應力的因素一併考慮,故此法可幫助我們求出比以往更精確的內部量子效率。最後,藉由電致發光得到各元件的外部量子效率,進而可求得各元件的光萃取效率,進而從幾何觀點來探討奈米柱結構的貢獻。 在本論文中,我們藉由奈米柱元件與平面結構元件的應力及缺陷的差異,讓我們對發光二極體的效率探討有了新的思維,此一連串緊扣的複雜關係,將在本論文中一一剖析及呈現。 | zh_TW |
dc.description.abstract | Recently, GaN has been widely applied to short-wavelength optical devices due to its superior optical and electrical characteristics. The InGaN/GaN nanorod light-emitting-diode array is one of the most popular structures. In this thesis, we demonstrated a practical approach to fabricate nanorod LED arrays. By means of the nanosphere lithography, the fabricated device has been proved to relax the compressive strain underneath the active layers effectively.
Nowadays, a commonly employed method to find internal quantum efficiency (IQE) of a LED is by assuming complete frozen of defects at very low temperature and thus the IQE to be 100% as the injected carriers are all contributed to radiative recombination. Despite the simplicity, the method underestimates other factors for IQE. According to our temperature-dependent EL, PL and Raman measurement, we explored a severer strain effect accompanying the eliminating defects with decreasing temperature. Thus, we proposed a model to view the issue of IQE from a brand-new perspective. Taking both defects and strain into consider, it provides a way to figure out the more precise value of IQE than before. At last, we further discussed the external quantum efficiency and the light extraction efficiency on planar and nanorod LEDs. The comprehensive thinking of the optical efficiency on the planar and nanorod LEDs will be presented in this thesis. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T16:06:47Z (GMT). No. of bitstreams: 1 ntu-101-R99941011-1.pdf: 2245531 bytes, checksum: 0d2066ea6efd62795d0680b4529d919e (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | Table of Contents
摘要 .................................................... iv Abstract ............................................... vi Table of Contents ..................................... viii List of Figures ........................................ xi List of Tables ........................................ xiii Chapter One Introduction................................ 1 1-1. Preface ........................................... 1 1-2. Motivation ........................................ 4 1-3. Nanorod fabrication................................ 5 Chapter Two InGaN/GaN nanorod LEDs by nanosphere lithography and chemical mechanical polishing processes..............9 2-1. InGaN/GaN MQW nanorod LEDs fabrication..............9 2-2. Device characteristics of nanorod LEDs..............13 Chapter Three Strain relaxation analysis and the effect on bandgap of InGaN/GaN nanorod LEDs....................... 18 3-1. Preface ........................................... 18 3-2. Device characteristics ............................ 19 3-3. Strain relaxation analysis of nanorod structures by temperature dependent Raman measurement ................ 19 3-3-1. Temperature dependent Raman scattering measurement ..............19 3-3-2. Calculation of the biaxial strain underneath InGaN/GaN MOWs and the corresponding piezoelectric field ..............23 3-4. Investigation of strain effect on the bandgap by one-dimension self-consistent solver with finite difference method .......26 Chapter Four Exploration of the correlation between strain and defects in InGaN/GaN nanorod LEDs .................. 31 4-1. Preface ...................... 31 4-2. Device characteristics ............................ 32 4-3. Exploration of the correlation between strain and defects by low-temperature electroluminescence measurement ........................................................ 32 Chapter Five Determination of the optical efficiency of InGaN/GaN nanorod LEDs by low-temperature characteristics ........................................................ 42 5-1. Preface ........................................... 42 5-2. Device characteristics ............................ 43 5-3. Determination of the internal quantum efficiency ........................................................ 43 5-3-1. Temperature dependent photoluminescence measurement .........................................................43 5-3-2. Propose a model to determine the internal quantum efficiency ..............................................45 5-4. Determination of the other optical efficiency ..... 49 Chapter Six Conclusion ................................. 54 | |
dc.language.iso | en | |
dc.title | 氮化鎵奈米柱發光二極體其應力與缺陷相依性之內部量子效率之特性探討 | zh_TW |
dc.title | Characterization of Strain and Defect Dependent Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diode Arrays | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 葉秉慧,吳肇欣,林恭如 | |
dc.subject.keyword | 氮化鎵,奈米柱,發光二極體,內部量子效率,外部量子效率,光萃取效率,應力釋放,化學機械研磨, | zh_TW |
dc.subject.keyword | GaN,nanorod,light emitting diode,internal quantum efficiency,external quantum efficiency,light extraction efficiency,strain relaxation,chemical mechanical polishing, | en |
dc.relation.page | 55 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2013-06-13 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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