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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62516完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳士元(Shih-Yuan Chen) | |
| dc.contributor.author | Po-Wei Huang | en |
| dc.contributor.author | 黃柏維 | zh_TW |
| dc.date.accessioned | 2021-06-16T16:03:40Z | - |
| dc.date.available | 2023-02-18 | |
| dc.date.copyright | 2021-02-22 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-02-04 | |
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Theory Techn., vol. 67, no. 7, pp. 3088-3098, July 2019. [19] D. P. Nguyen, T. Pham, B. L. Pham and A. Pham, 'A high efficiency high power density harmonic-tuned Ka band stacked-FET GaAs power amplifier,' IEEE Compound Semiconductor Integr. Circuit Symp. (CSICS), Austin, TX, 2016, pp. 1-4. [20] I. Huang et al., 'A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-μm GaAs p-HEMT technology,' Asia-Pacific Microw. Conf. (APMC), Kyoto, 2018, pp. 986-988. [21] Y. Park, Y. Kim, W. Choi, J. Woo and Y. Kwon, 'X-to-K band broadband watt-level power amplifier using stacked-FET unit cells,' IEEE Radio Freq. Integr. Circuits Symp., Baltimore, MD, 2011, pp. 1-4. [22] D. P. Nguyen and A. Pham, 'An ultra compact watt-level Ka-Band stacked-FET power amplifier,' IEEE Microw. Wireless Compon. Lett., vol. 26, no. 7, pp. 516-518, July 2016. [23] D. P. Nguyen, T. Pham and A. Pham, 'A Ka-band asymmetrical stacked-FET MMIC Doherty power amplifier,' IEEE Radio Freq. Integr. Circuits Symp. (RFIC), Honolulu, HI, 2017, pp. 398-401. [24] Z. -J. Huang, Z. -H. Fu, B. -. W. Huang, Y. -T. Lin, K. -Y. Kao and K. -Y. Lin, 'A millimeter-wave dual-band class-F power amplifier in 90 nm CMOS,' IEEE Int. Symp. Radio Freq. Integr. Techn. (RFIT), Hiroshima, Japan, 2020, pp. 70-72. [25] S. Chang, C. Chen and H. Wang, 'A Ka-band dual-mode power amplifier in 65-nm CMOS technology,' IEEE Microw. Wireless Compon. Lett., vol. 28, no. 8, pp. 708-710, Aug. 2018. [26] W. Ou, Y. Tsai, P. Tseng and L. Lu, 'A 2.4-GHz dual-mode resizing power amplifier with a constant conductance output matching,' IEEE Int. System-on-Chip Conf. (SOCC), Munich, 2017, pp. 258-261. [27] S. Lee, S. Kang and S. Hong, 'A 28-GHz CMOS linear power amplifier with low output phase variation over dual power modes,' IEEE Microw. Wireless Compon. Lett., vol. 29, no. 8, pp. 551-553, Aug. 2019. [28] S. C. Cripps, RF Power Amplifiers for Wireless Communications. Boston, MA: Artech House, 2000. [29] H. Dabag, B. Hanafi, F. Golcuk, A. Agah, J. F. Buckwalter and P. M. Asbeck, 'Analysis and design of stacked-FET millimeter-wave power amplifiers,' IEEE Trans. Microw. Theory Techn., vol. 61, no. 4, pp. 1543-1556, April 2013. [30] M. A. Khan and R. Negra, 'Highly linear 1.6 GHz 3.3V RF power amplifier using floating body technique in triple-well 130 nm CMOS technology,' IEEE Top. Conf. Power Amplif. Wireless Radio Appl. (PAWR), Newport Beach, CA, 2014, pp. 46-48. [31] W. L. Chan and J. R. Long, 'A 58–65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply,' IEEE J. Solid-State Circuits, vol. 45, no. 3, pp. 554-564, March 2010. [32] Y. Palaskas et al., 'A 5-GHz 20-dBm power amplifier with digitally assisted AM-PM correction in a 90-nm CMOS process,' IEEE J. Solid-State Circuits, vol. 41, no. 8, pp. 1757-1763, Aug. 2006. [33] Y. Zhang and P. Reynaert, 'A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS,' IEEE Radio Freq. Integr. Circuits Symp. (RFIC), Honolulu, HI, 2017, pp. 33-36. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62516 | - |
| dc.description.abstract | 本論文分為三個部分，都是應用於第五代行動通訊系統的毫米波雙頻及超寬頻功率放大器。 第一個部分呈現了使用 0.15 微米砷化鎵假型高速場效電晶體製程設計的雙頻段功率放大器。此電路利用最佳化匹配路徑的分析使得匹配網路在兩個操作頻段的損失能夠最小化，讓整體功率放大器在兩個頻段都有很好的功率特性。 第二個部分提出了使用 0.15 微米砷化鎵假型高速場效電晶體製程設計的超寬頻功率放大器。此電路利用等效磁耦合共振腔得到寬頻的功率特性，並且利用輸入及級間匹配電路作小訊號濾波，使得小訊號也有寬頻的響應。此外，此部分也有討論在功率結合的架構下，輸出匹配必須要在適當的參考平面設計才能夠達到寬頻的阻抗匹配。此電路的量測結果有 75%的小訊號 3-dB 頻寬以及 51%的飽和輸出功率 1-dB 頻寬。 最後一部分提出了使用 90 奈米金氧半場效電晶體製程設計的雙頻段及雙模式功率放大器。此電路的功率級採用固定最佳負載的偏壓方式切換高功率模式及低功率模式，因此設計上可以只用一組匹配網路讓兩個模式都達到最佳的功率特性，匹配網路則是利用最佳化磁耦合共振腔設計，使得兩個頻段都可以在最小損失的情況下達到匹配的目的。此外，在驅動級設計時，利用閘極偏壓的選擇讓振幅對相位失真與功率級反向達到補償效果，以改善整體線性度。 | zh_TW |
| dc.description.abstract | This thesis is divided into three parts, all of which are millimeter-wave dual-band and ultra wide-band power amplifier used in the fifth-generation (5G) communication system. In the first part, a dual-band power amplifier fabricated in 0.15-μm GaAs pHEMT process is presented. The concept of optimal matching contour is used in the design of matching network to minimize the loss in both operating frequency bands, thus, the power amplifier achieve good power performance in both frequency bands. In the second part, an ultra-wide band power amplifier fabricated in 0.15-μm GaAs pHEMT process is presented. The equivalent magnetically coupled resonator is adopted to obtain wide-band power performance, and the input and inter-stage matching network is designed for small signal gain-flatness to achieve wide-band small signal response. Besides, this part also discusses that under the power-combining structure, the output matching network must be designed in an appropriate reference plane to achieve wide-band impedance matching. The measured results show 75% small signal 3-dB bandwidth and 51% saturated output power 1-dB bandwidth. In the last part, a dual-band and dual-mode power fabricated in 90-nm CMOS process is presented. The constant-Zopt bias switching method is adopted in the power stage to switch between high-power and low-power mode, so both modes can achieve best power performance with only one set of matching network. The matching networks are designed by optimized magnetically coupled resonator to achieve dual-band impedance matching with minimum loss. Besides, the gate bias of driver stage is designed for the reverse AM-PM distortion to compensate the distortion of power stage to improve overall linearity. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T16:03:40Z (GMT). No. of bitstreams: 1 U0001-0302202112061300.pdf: 6241840 bytes, checksum: c9d46478c79b6e13c3dbc984ed89c343 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | 口試委員會審定書 # 誌謝 i 中文摘要 iii ABSTRACT iv CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xx Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Contributions 2 1.3 Thesis Organization 3 Chapter 2 A 28/39 GHz Dual-Band Power Amplifier in 0.15-µm GaAs pHEMT for 5G Communication 5 2.1 Introduction 5 2.2 Circuit design 6 2.2.1 Dual-Band Matching Technique [1] 6 2.2.2 Concept of Optimal Matching Contour [2] 7 2.2.3 Design of Two-Stage Power Amplifier 9 2.2.4 Circuit Schematic and Simulation Results 27 2.3 Measured Results 36 2.4 Discussion 44 2.5 Summary 51 Chapter 3 A Millimeter-Wave Ultra-Wide Band Power Amplifier in 0.15-μm GaAs pHEMT for 5G Communication 54 3.1 Introduction 54 3.2 Circuit Design 55 3.2.1 Block Diagram 55 3.2.2 Device Selection of Power Stage 55 3.2.3 Discussion of Wide-Band Matching 58 3.2.4 Design of Ultra-Wide Band Output Matching Network 62 3.2.5 Driver Stage and Matching Network 68 3.2.6 Circuit Schematic and Simulation Results 71 3.3 Measured Results 81 3.4 Discussion 95 3.5 Summary 98 Chapter 4 A 28/38 GHz Dual-Band and Dual-Mode Power Amplifier in 90-nm CMOS for 5G Communication 104 4.1 Introduction 104 4.2 Circuit Design 105 4.2.1 Design of Dual-Mode Power Stage 105 4.2.2 Design of Dual-Band Output Matching Network 112 4.2.3 Design of Driver Stage 113 4.2.4 Circuit Schematic and Simulation Results 119 4.3 Measured Results 132 4.4 Summary 144 Chapter 5 Conclusion 148 REFERENCE 150 | |
| dc.language.iso | en | |
| dc.subject | 固定最佳負載偏壓 | zh_TW |
| dc.subject | 第五代行動通訊 | zh_TW |
| dc.subject | 毫米波 | zh_TW |
| dc.subject | 功率放大器 | zh_TW |
| dc.subject | 雙頻段 | zh_TW |
| dc.subject | 超寬頻 | zh_TW |
| dc.subject | 最佳化匹配路徑 | zh_TW |
| dc.subject | 磁耦合共振腔 | zh_TW |
| dc.subject | 雙模式 | zh_TW |
| dc.subject | Dual-mode | en |
| dc.subject | fifth-generation (5G) | en |
| dc.subject | Dual-Band | en |
| dc.subject | Ultra-wide band | en |
| dc.subject | Optimal matching contour | en |
| dc.subject | Magnetically coupled resonator | en |
| dc.subject | Millimeter-wave | en |
| dc.subject | Constant-Zopt bias switching method | en |
| dc.subject | Power amplifier | en |
| dc.title | 應用於第五代行動通訊之毫米波雙頻及寬頻功率放大器研究 | zh_TW |
| dc.title | Research on Millimeter-Wave Dual-Band and Wide-Band Power Amplifier for 5G Mobile Communication | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 109-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 林坤佑(Kun-You Lin) | |
| dc.contributor.oralexamcommittee | 張鴻埜(Hong-Yeh Chang),蔡政翰(Jeng-Han Tsai),吳宗澤(Chung-Tse Wu) | |
| dc.subject.keyword | 毫米波,第五代行動通訊,雙頻段,超寬頻,最佳化匹配路徑,磁耦合共振腔,雙模式,固定最佳負載偏壓,功率放大器, | zh_TW |
| dc.subject.keyword | Millimeter-wave,fifth-generation (5G),Dual-Band,Ultra-wide band,Optimal matching contour,Magnetically coupled resonator,Dual-mode,Constant-Zopt bias switching method,Power amplifier, | en |
| dc.relation.page | 154 | |
| dc.identifier.doi | 10.6342/NTU202100440 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2021-02-05 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
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