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標題: | 電極面積對邊緣氧化層增厚金氧半穿隧二極體雙態特性之影響 Effect of Electrode Area on The Two-State Characteristic in MIS(p) Tunnel Diode with Edge-Thickened Oxide |
作者: | Yung-Chun Yang 楊詠竣 |
指導教授: | 胡振國(JENN-GWO HWU) |
關鍵字: | 氧化層,金氧半穿隧二極體, MIS(p) Tunnel Diode,Edge-Thickened Oxide,ANO, |
出版年 : | 2020 |
學位: | 碩士 |
摘要: | 本篇論文中,我們製備了邊緣氧化層增厚金氧半穿隧二極體來探討邊緣氧化層增厚的結構對於金氧半二極體在記憶體應用上的影響,並嘗試改變氧化層增厚金氧半穿隧二極體的電極面積,來探討不同電極面積下,記憶體效果的變化。在論文的第一章中,金氧半二極體的電特性以及記憶體特性,被證明可以透過改變電極厚度等方式來加強,並且為了製備高品質的氧化層,陽極氧化的製備方式也在第一章中被說明。在論文的第二章中,邊緣氧化層增厚的金氧半穿隧二極體被製備,並透過電特性的量測以及記憶體特性的量測,說明了該元件比較起單純的金氧半穿隧二極體有更好的記憶體效果,除此之外,為了探討邊緣氧化層增厚金氧半穿隧二極體的機制原理,TCAD的模擬技術也在該章節中被使用,並透過TCAD技術發現了橫向電場的存在是使邊緣氧化層增厚金氧半穿隧二極體有更好的記憶體效果的理由。在論文的第三章中,透過比較不同電極大小的元件,發現了具有較大電極面積的元件會比起較小電極面積的元件有更大的延遲電流,並透過TCAD模擬探討了邊緣氧化層增厚金氧半穿隧二極體在I-V圖中的特殊現象,該元件比起一般的金氧半穿隧二極體有更小的飽和電流,透過TCAD模擬發現,這種電流現象也是因為橫向電場所引起的。在論文的第四章中,電極邊緣鋁增厚的元件也被證明具有較好的記憶體效果,並提出了把電極增厚跟氧化層增厚的元件複合的構想,留待之後的研究進行探討。 In this thesis, edge thickened oxide metal-insulator-silicon (ETO MIS) diode is fabricated to find out the effect of edge thickened oxide structure on the memory application of MIS diode. Also, the memory effects of the ETO MIS structures with multiple electrode areas are measured. In chapter 1, the electrical and memory characteristics of MIS structures are proven that they can be promoted by changing the thickness of the electrodes. To make high quality oxide layer, the anodic oxidation is also explained. In chapter 2, the ETO MIS structures are fabricated, and that the memory effects of them are better than those of the MIS structures is shown. Besides, the TCAD simulation is examined to find out the mechanism of them. By TCAD simulation, the existence of the lateral electric field is found to be the reason of the ETO MIS memory effect. In chapter 3, the ETO MIS structure with bigger electrode is found with bigger retention current by comparing the ETO MIS structures with multiple electrode areas. Also, the special phenomenon of ETO MIS in the I-V curve, which is that ETO MIS tends to have lower saturation current, is discussed by TCAD simulation. This phenomenon is found to be also triggered by the lateral electric field with TCAD simulation. In chapter 4, ultrathin metal surrounded gate (UTMSG) MIS structure is proven with better memory effect. And the concept of combining ETO MIS and UTMSG is proposed. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/61038 |
DOI: | 10.6342/NTU202001238 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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