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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳怡然 | |
dc.contributor.author | Chien-Chia Ling | en |
dc.contributor.author | 凌健嘉 | zh_TW |
dc.date.accessioned | 2021-06-16T10:24:25Z | - |
dc.date.available | 2013-08-20 | |
dc.date.copyright | 2013-08-20 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-08-15 | |
dc.identifier.citation | [1] J. J. Lee, C. W. Byeon, K. C. Eun, I. Y. Oh, and C. S. Park, 'Gbps 60GHz CMOS OOK Modulator and Demodulator,' in Proc. IEEE Compound Semiconductor Integrated Circuit Symp., Oct. 2010, pp. 145-149.
[2] J. J. Lee and C. S. Park, '60-GHz Gigabits-Per-Second OOK Modulator With High Output Power in 90-nm CMOS,' IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 58, pp. 249-253, May 2011. [3] T. Yu, Y. Chau-Chan, and K. Jean-Fu, 'OOK/BPSK-Modulated Impulse Transmitters Integrated With Leakage-Cancelling Circuit,' IEEE Trans. Microw. Theory Tech., vol. 61, pp. 218-224, 2013. [4] E. Juntunen, M. C. H. Leung, F. Barale, A. Rachamadugu, D. A. Yeh, B. G. Perumana, et al., 'A 60-GHz 38-pJ/bit 3.5-Gb/s 90-nm CMOS OOK Digital Radio,' IEEE Trans. Microw. Theory Tech., vol. 58, pp. 348-355, Feb. 2010. [5] K. W. Chew, J. Zhang, K. Shao, W. B. Loh, and S. F. Chu, 'Impact of Deep N-well Implantation on Substrate Noise Coupling and RF Transistor Performance for Systems-on-a-Chip Integration,' in Proc. 32nd ESSDERC, 2002, pp. 251-254. [6] M. Yeh, Z. Tsai, R. Liu, K. Lin, Y.Chang, and H. Wang, 'Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance,' IEEE Trans. Microw. Theory Tech., vol. 54, pp. 31-39, Jan. 2006. [7] B. W. Min and G. M. Rebeiz, 'Ka-Band Low-Loss and High-Isolation Switch Design in 0.13-μm CMOS,' IEEE Trans. Microw. Theory Tech., vol. 56, pp. 1364-1371, 2008. [8] B. Cetinoneri, Y. A. Atesal, and G. M. Rebeiz, 'A miniature DC-70 GHz SP4T switch in 0.13-μm CMOS,' in IEEE IMS Symp. Dig., June 2009, pp. 1093-1096. [9] Q. Li, Y. P. Zhang, K. S. Yeo, and W. M. Lim, '16.6- and 28-GHz Fully Integrated CMOS RF Switches With Improved Body Floating,' IEEE Trans. Microw. Theory Tech., vol. 56, pp. 339-345, Feb. 2008. [10] T. K. Thrivikraman, W. M. L. Kuo, J. P. Comeau, and J. D. Cressler, 'The Impact of Technology Node Scaling on nMOS SPDT RF Switches,' in Technical Digest of the 2008 IEEE Eropean Microwave Symposium, 2008, pp. 374-377. [11] H.-Y. Chang and C.-Y. Chan, 'A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process,' Ieee Microw Wirel Co, vol. 20, pp. 82-84, Feb. 2010. [12] P. Piljae, H. S. Ding, J. J. Pekarik, M. Rodwell, and C. P. Yue, 'A high-linearity, LC-Tuned, 24-GHz T/R switch in 90-nm CMOS,' in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, June 2008, pp. 369-372. [13] N. Talwalkar, C. P. Yue, and S. S. Wong, 'An integrated 5.2GHz CMOS T/R switch with LC-tuned substrate bias,' in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2003, pp. 362-499. [14] H. W. Kim, M. Ahn, O. Lee, C. H. Lee, and J. Laskar, 'A high power CMOS differential T/R switch using multi-section impedance transformation technique,' in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2010, pp. 483-486. [15] C. Huynh and C. Nguyen, 'New Ultra-High-Isolation RF Switch Architecture and Its Use for a 10-38-GHz 0.18-μm BiCMOS Ultra-Wideband Switch,' IEEE Trans. Microw. Theory Tech., vol. 59, pp. 345-353, Feb. 2011. [16] M. Schwartz, 'Information transmission, modulation, and noise,' ed: McGraw-Hill (New York), 1990. [17] P. Z. Peebles Jr, 'Digital communication systems,' Englewood Cliffs, NJ, Prentice-Hall, Inc., 1987, 445 p., vol. 1, 1987. [18] R. Behzad, 'Design of analog CMOS integrated circuits,' International Edition, 2001. [19] C. M. Ta, E. Skafidas, and R. J. Evans, 'A 60-GHz CMOS Transmit/Receive Switch,' in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Jun. 2007, pp. 725-728. [20] C. Y. Ou, C. Y. Hsu, H. R. Lin, and H. R. Chuang, 'A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process,' in European Microwave Integrated Circuits Conference, 2009, pp. 250-253. [21] P. C. Huang, Z. M. Tsai, K. Y. Lin, and H. Wang, 'A 17-35 GHz Broadband, High Efficiency PHEMT Power Amplifier Using Synthesized Transformer Matching Technique,' IEEE Trans. Microw. Theory Tech., vol. 60, pp. 112-119, 2012. [22] H. Wang, C. Sideris, and A. Hajimiri, 'A CMOS Broadband Power Amplifier With a Transformer-Based High-Order Output Matching Network,' IEEE J. Solid-State CIrcuits, vol. 45, pp. 2709-2722, 2010. [23] H. M. Hsu, C. W. Tseng, and K. Y. Chan, 'Characterization of On-Chip Transformer Using Microwave Technique,' IEEE Transactions On Electron Devices, vol. 55, pp. 833-837, March 2008. [24] D. H. Shin, C. P. Yue, and J. Park, 'A low-power, 3-5-GHz CMOS UWB LNA using transformer matching technique,' in IEEE Asian Solid-State Circuits Conference Proceedings of Technical Papers, Nov. 2007, pp. 95-98. [25] J. Rascher, S. Pinarello, J. E. Mueller, G. Fischer, and R. Weigel, 'Highly linear robust RF switch with low insertion loss and high power handling capability in a 65nm CMOS technology,' in IEEE Silicon Monolithic Integr. Circuits in RF Syst., 2012, pp. 21-24. [26] A. A. Kidwai, C. T. Fu, J. C. Jensen, and S. S. Taylor, 'A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process,' IEEE J. Solid-State Circuits, vol. 44, pp. 1352-1360, May 2009. [27] M. Ahn, C.-H. Lee, B.-S. Kim, and J. Laskar, 'A High-Power CMOS Switch Using A Novel Adaptive Voltage Swing Distribution Method in Multistack FETs,' IEEE Trans. Microw. Theory Tech., vol. 56, pp. 849-858, Apr. 2008. [28] L. Shin Woei, W. King-Wah, D. Shengxi, and Z. Yuanjin, 'A 0.18 μm CMOS UWB transmitter with reconfigurable pulse width,' in Asia Pacific Micro. Conf. APMC 2009, pp. 253-256. [29] W. Shin, M. Uzunkol, R. A. Alhalabi, and G. M. Rebeiz, '60 GHz low power 1.5 Gb/s ASK transmitter in 90 nm CMOS with on-board Yagi-Uda antenna,' in IEEE European Microw. Conf. (EuMC), Sep. 2010, pp. 272-275. [30] A. Hamidian, A. Malignaggi, R. Shu, A. M. Kamal, and G. Boeck, 'Multi-gigabit 60 GHz OOK front-end in 90 nm CMOS,' in IEEE Silicon Monolithic Integr. Circuits in RF Syst., 2013, pp. 96-98. [31] W. Fan, A. C. W. Lu, L. L. Wai, and B. K. Lok, 'Mixed-mode S-parameter characterization of differential structures,' in Electronics Packaging Technology Conference, 2003, pp. 533-537. [32] C. Shuen-Chien, C. Sheng-Fuh, C. Ting-Yueh, and T. Jian-An, 'An Internally-Matched High-Isolation CMOS SPDT Switch Using Leakage Cancellation Technique,' Microwave and Wireless Components Letters, IEEE, vol. 17, pp. 525-527, 2007. [33] A. Devices, 'Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT,' ADG918/ADG919 datasheet. [34] H. Microwave, 'High isolation SPDT non-reflective switch, DC - 4 GHz,' HMC349MS8G / 349MS8GE datasheet. [35] Pericom, '6.5 Gbps SAS2, SATA3, XAUI, 2 Differential Channel, 2:1 Mux/DeMux Switch,' PI2DBS6212. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/60641 | - |
dc.description.abstract | 近年在有線及無線系統在微波頻段的應用有顯著的發展,並大大地改變人們的生活,手持行動裝置儼然已成為現在人生活的必需品。而在通訊系統中,常可見到各種的調變技術。本論文將介紹一個操作於1.9 GHz 之OOK調變器使用90奈米CMOS製程以及使用0.18微米CMOS製程應用於SATA系統的雙向開關。為了提升開關電路在饋入損失(Insertion Loss)、隔離度(Isolation)、開關速度、線性度的表現,應用相關技術於設計之電路:第一部分,將RF leakage消除技術應用於CMOS開關鍵控(OOK)調變器之開關;第二部分,在SATA3系統之雙向開關上,應用Body floating與Deep-n-well等技術,提升開關高頻下的表現。
在論文的第一部分,CMOS開關鍵控(OOK)調變器,使用複製電路(replicative circuit)來實現訊號消除的技術,來提高關閉下的隔離度;本電路的另一特色,是在開關切換On/Off變化下,依然保持良好的匹配到50 Ohm網路。文中展示具高隔離度的開關鍵控調變器,其操作頻率為2 GHz。量測結果顯示,在On/Off state下皆有達成良好的匹配,且隔離度提升至將近40 dB。 在論文的第二部分,將設計一個CMOS雙向開關,此電路操作頻率由DC- 4GHz,採用差動訊號電路架構,具有高達6.5 Gbps的傳輸速率,低Bit-to-Bit skew、饋入損失、交叉干擾(Crosstalk),且有高隔離度,可應用於SAS2、SATA3、XAUI系統。使用Body floating與Deep-n-well 接高電壓等技術,來提升高頻的電路表現。文章中,敘述電路實現方式與模擬結果,及最後的佈局及模擬結果。 | zh_TW |
dc.description.abstract | Over the few years, there are several significant developments that have been proposed in the domain of wire and wireless RF communication systems. This paper presents a 90-nm CMOS OOK modulator operating at 1.9 GHz and a differential bi-directional channel DC-4-GHz switch in 0.18-m CMOS. The proposed switch having a 6.5 Gbps data rate, high isolation, low Bit-to-Bit skew, insertion loss and crosstalk is suitable to SAS2, SATA3 and XAUI systems. Several techniques such as body-floating, DNW-to- Vdd and RF-leakage-cancellation are used in this thesis to improve the performance of the insertion loss, isolation, switching speed and the linearity.
The ultrahigh isolation in off-state is achieved by using the RF leakage cancellation technique with replicative circuit implementation on CMOS on-off keying modulator. Moreover, the insertion loss and the isolation can be further improved in high frequency range by connecting the deep-n-well to Vdd and using body floating technique. The matching network used balun and transformer to sustain the input/output matching is matched 50 ohm. The measurement result shows that the isolation of the OOK modulator operating in 1.9 GHz is higher than 40 dB and the matching network can perfectly achieve 50 ohm while operating state of OOK modulator changes between on/off state. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T10:24:25Z (GMT). No. of bitstreams: 1 ntu-102-R00942083-1.pdf: 4008218 bytes, checksum: 6e1977ae9bb35cebdac78366b024fe61 (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 口試委員會審定書 #
中文摘要 i ABSTRACT iii 目錄 v 圖目錄 vii 表目錄 xiii 第 1 章 簡介 1 1.1 動機 1 1.2 近期發展. 2 1.2.1 開關鍵控調變器 2 1.2.2 CMOS開關電路 5 1.3 論文貢獻 10 1.4 論文架構 11 第 2 章 開關鍵控調變器與開關電路原理 13 2.1 概述 13 2.2 開關鍵控調變 13 2.2.1 二元波幅調變(BASK) 13 2.3 CMOS 開關電路 15 2.3.1 CMOS電晶體 15 2.3.2 基本開關電路架構 18 2.3.3 Single-pole single-throw(SPST)電路分析 20 2.4 結論 21 第 3 章 CMOS開關鍵控(OOK)調變器使用90 nm製程 23 3.1 簡介 23 3.2 電路設計 24 3.3 匹配網路之變壓器與不平衡變壓器 27 3.4 模擬結果 37 3.5 量測結果 39 3.5.1 量測方法與考量 39 3.5.2 量測結果 41 第 4 章 DC- 4GHz差動訊號雙向通道開關 49 4.1 簡介 49 4.2 電路設計 50 4.3 電路模擬結果 58 4.4 量測設定 64 第 5 章 結論 69 參考文獻 71 | |
dc.language.iso | zh-TW | |
dc.title | CMOS開關鍵控調變器及應用於SATA3差動訊號雙向通道開關 | zh_TW |
dc.title | A CMOS On-Off Keying Modulator and Bi-directional
Switch for SATA3 System | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳筱青,蔡政翰,羅棠年 | |
dc.subject.keyword | 開關鍵控調變器,RF leakage 消除技術,雙向性開關,吸收性開關(Absorptive switch), | zh_TW |
dc.subject.keyword | CMOS on-off Keying Modulator,RF Leakage Cancellation,Bi-directional Switch,Absorptive Switch, | en |
dc.relation.page | 75 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2013-08-16 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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