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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 毛明華 | |
dc.contributor.author | Yen-Ju Chen | en |
dc.contributor.author | 陳彥儒 | zh_TW |
dc.date.accessioned | 2021-06-16T10:01:00Z | - |
dc.date.available | 2022-02-08 | |
dc.date.copyright | 2017-02-08 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-11-14 | |
dc.identifier.citation | [1] Robert G. Hunsperger,” Integrated Optics: Theory and Technology,” Springer (2009).
[2] K. J. Vahala, 'Optical microcavities,' Nature 424, 839-846 (2003). [3] V. R. Almeida, C. A. Barrios, R. R. Panepucci, and M. Lipson, 'All-optical control of light on a silicon chip,' Nature 431, 1081-1084 (2004). [4] Vilson R. Almeida, Carlos A. Barrios, Roberto R. Panepucci, Michal Lipson, Mark A. Foster, Dimitre G. Ouzounov, and Alexander L. Gaeta, “All-optical switching on a silicon chip,” Opt. Lett. 29, 2867-2869 (2005). [5] 王舜能, '絕緣層覆矽全光微環調製器之製作與量測,' Master Thesis, NTU GIEE (2015). [6] Stefan F. Preble, Qianfan Xu, Bradley S. Schmidt, and Michal Lipson, “Ultrafast all-optical modulation on a silicon chip,” Opt. Lett. 30, 2891-2893 (2005). [7] Qianfan Xu, Bradley Schmidt, Sameer Pradhan & Michal Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435, 325-327 (2005). [8] Michael Först, Jan Niehusmann, Tobias Plötzing, Jens Bolten, Thorsten Wahlbrink, Christian Moormann, and Heinrich Kurz, “High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators,” Opt. Lett. 32, 2046-2048 (2007). [9] Michael Waldow, Tobias Plötzing, Martin Gottheil, Michael Först, Jens Bolten, Thorsten Wahlbrink, and Heinrich Kurz, “25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator,” Opt. Express 16, 7693-7702 (2007). [10] T. A. Ibrahim, V. Van, and P.-T. Ho, “All-optical time-division demultiplexing and spatial pulse routing with a GaAs/AlGaAs microring resonator,” Opt. Lett. 27, 803-805 (2002). [11] Tarek A. Ibrahim, W. Cao, Y. Kim, J. Li, J. Goldhar, P.-T. Ho, and Chi H. Lee, “All-Optical Switching in a Laterally Coupled Microring Resonator by Carrier Injection,” IEEE Photonics Technol. Lett. 15, 36-38 (2003). [12] 林彥志, “以激發-探測法研究微碟共振腔之載子動力學,” Doctoral Dissertation, NTU GIEE(2015). [13] B. E. A. Saleh, and M. C. Teich, Fundamentals of Photonics, Wiley(2013). [14] Dong-Po Cai, Jyun-Hong Lu, Chii-Chang Chen, Chien-Chieh Lee, Chu-En Lin, and Ta-Jen Yen, “Compact pulley-type microring resonator with high quality factor,” Appl. Phys. Express 7, 112202 (2014). [15] 蔡明倫, '絕緣層上矽微環共振腔與波導耦合之製作與分析,' Master Thesis, NTU GIEE (2014). [16] E. S. Harmon, M. R. Melloch, J. M. Woodall, D. D. Nolte, N. Otsuka, and C. L. Chang, “Carrier lifetime versus anneal in low temperature growth GaAs,” Appl. Phys. Lett. 63, 16 (1993). [17] K. Mahalingam, N. Otsuka, M. R. Melloch, J. M. Woodall, and A. C. Warren, “Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs,” J. Vac. Sci. Technol. B9, 4 (1991). [18] S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, ” Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low Temperatures,” Appl. Phys. Lett. 59, 25 (1991). [19] J. Heebner, R. Grover, T. Ibrahim, Optical Microresonators: Theory, Fabrication and Applications, Springer (2008). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/60174 | - |
dc.description.abstract | 在本論文中,我們利用模擬軟體輔助設計將低溫砷化鎵(LT-GaAs)嵌入矽微碟共振腔以做為全光開關(All Optical Switches),並透過分子束磊晶系統(Molecular Beam Epitaxy System)、電子束二曝技術與製程技術成功的在絕緣層覆矽基板上製作了該元件,最終透過光學量測驗證開關效能。
在本實驗中,由林浩雄老師的分子束磊晶系統所成長之低溫砷化鎵薄膜,其載子生命期可短至288飛秒,為本實驗室載子生命期最短之材料,且克服高溫成長之砷化鎵應用於元件上之困難。實際成長於絕緣層覆矽溝槽中的低溫砷化鎵載子生命期則為520飛秒。 最終我們成功實現了嵌入低溫砷化鎵之矽微碟共振腔,直徑為13微米,其Q值可達8000,並將該元件應用於全光開關上。最終得到開關之開啟與關閉(Switch on, Switch off)的時間分別為544ps與464ps,而載子生命期為342ps。為了驗證低溫砷化鎵的是否能加快開關速度,我們另外製作矽微碟全光開關。透過兩組實驗數據比較,佐證了矽微碟全光開關之開關時間因填入低溫砷化鎵而有大幅的降低。 | zh_TW |
dc.description.abstract | In this thesis, we design Low Temperature GaAs Embedded Micro-Disk Resonators on Silicon-on-Insulator Substrate for all optical switches based on simulation. We successfully fabricate such devices by using Molecular Beam Epitaxy System and techniques of E-beam second exposure and verify its efficacy by optical measurement.
In our experiment, we successfully deposit Low Temperature GaAs by Molecular Beam Epitaxy System of MBE Lab. The carrier lifetime of Low Temperature GaAs thin film is as short as 288fs, which is the material with the shortest carrier lifetime in our laboratory. We use Low Temperature GaAs to solve the problem of device implementation on High Temperature GaAs. Its lifetime can be 520fs, when we practically embed Low Temperature GaAs in the Silicon trench. Finally, we successfully embed Low Temperature GaAs in Si microdisk with 13μm diameter. Low Temperature GaAs embedded microdisk resonator, and its quality factor is 8000. We apply it to optical switches. Its switch-on and switch-off time are 636ps and 440ps, and its carrier lifetime is 342ps. We also fabricate Si microdisk to verify whether it successfully accelerate our switches. By comparing experiment data, we verify that LT GaAs embedded Si microdisk is faster than Si microdisk as optical switches. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T10:01:00Z (GMT). No. of bitstreams: 1 ntu-105-R03943106-1.pdf: 3007388 bytes, checksum: 48b2dfe2bfc5be58ecdd3ddc0ae4efbc (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 摘要 i
Abstract ii 目錄 iii 圖目錄 iv 表目錄 vii 第一章 序論 1 1.1積體光學 1 1.2微環共振腔 3 1.3全光開關(All optical switching) 5 1.4研究動機 8 1.5論文架構 8 第二章 理論分析 9 2.1回音廊模態 9 2.2品質因子(Q-factor) 12 2.3波導與微環之耦合 14 第三章 樣品製備及實驗量測架構 18 3.1光場分佈模擬 18 3.2元件製程 21 3.2.1第一次電子束曝光:定義alignment key位置 22 3.2.2第二次電子束曝光:定義Si trench位置。 24 3.2.3第三次電子束曝光:定義保護砷化鎵微環之光阻 26 3.2.4第四次電子束曝光:定義矽波導與矽微環位置。 28 3.3量測架構 30 3.3.1激發探測量測(反射)架構 30 3.3.2穿透頻譜量測架構 31 3.3.3時間解析穿透量測架構 32 第四章 實驗量測結果與討論 34 4.1材料選擇 34 4.1.1高溫砷化鎵(High Temperature GaAs) 34 4.1.2低溫砷化鎵(LT GaAs) 37 4.2元件量測 40 第五章 結論 52 參考文獻 53 | |
dc.language.iso | zh-TW | |
dc.title | 低溫砷化鎵嵌入矽微碟之全光開關 | zh_TW |
dc.title | All Optical Switching in Low-Temperature-GaAs-Embedded Si Microdisk Resonators on Silicon-on-Insulator Substrate | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林浩雄,陳奕君,彭隆瀚 | |
dc.subject.keyword | 低溫砷化鎵,微碟共振腔,全光開關,激發-探測,光學量測, | zh_TW |
dc.subject.keyword | Low-temperature GaAs,Microdisk resonators,All optical switches,Pump probe measurement,Optial measurement, | en |
dc.relation.page | 55 | |
dc.identifier.doi | 10.6342/NTU201603739 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-11-14 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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