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標題: | 應用於WLAN之變壓器功率合成技術功率放大器研製及K頻段主動天線整合功率放大器研究 Research on CMOS Power Amplifier with Transformer Power Combining for WLAN System Applications and K-band Active Antenna Power Amplifier Using CMOS and IPD Process |
作者: | Guan-Jie Huang 黃冠傑 |
指導教授: | 林坤佑 |
關鍵字: | 高功率功率放大器,變壓器功率合成,IEEE 802.11a,WLAN,自動調整偏壓架構,主動整合式天線電路,近場量測, high Psat power amplifier,transformer power combining,IEEE 802.11a,WLAN,adaptive-bias technique,active integrated antenna,near-field measurement, |
出版年 : | 2017 |
學位: | 碩士 |
摘要: | 在無線通訊系統中,微波訊號在空氣傳送時,因受雜訊干擾與傳遞時訊號漸漸變弱影響,常致使接收機收到訊號失真而解碼錯誤,因此若能加強傳送訊號使其具有較好的訊號與雜訊能量比,則能增加解碼正確的機率,故在通訊系統中發射機的功率放大器如何具有更大的輸出功率便是重要的課題。除了高功率輸出之外,更要求高效率的操作。由於功率放大器在發射器中消耗了主要部分的能量,因此將效率最佳化是另一個重要的關鍵。
在本論文中,實現了兩種電路,分別為利用變壓器功率合成技術的高輸出功率功率放大器,以及使用自動調整偏壓架構的主動整合式天線電路。前者是利用金氧半場效電晶體製程實現,所設計的頻率為5.2-5.7 GHz頻段;後者為金氧半場效電晶體及整合被動元件製程實現,所設計的頻率為24 GHz頻段。 在本論文第二章中,設計並改良一個在K頻段的主動整合式天線電路,包含了使用了自動調整偏壓架構的功率放大器,及一偶極天線。此主動整合式電路天線利用0.18-μm互補式金氧半導體來製作功率放大器,以及使用整合式被動元件製程來製作天線。此電路改良自陳瑩嘉電路,將輸入巴倫器替換成傳統變壓器實現的巴倫器,並引入蔡作敏教授近場量測系統進行量測。 在本論文第三章中,討論如何使得功率合成器的損耗降到最低,在實現高功率功率放大器時,使其達到高輸出飽和合功率為主要討論重點。在本論文中,說明為何選定變壓器作為功率合成器,並利用等效模型模擬綜合比較串聯和並聯變壓器功率合成,來選定選用何種。在探討變壓器各項參數對功率合成效率的影響,使其效率達到最高。最後,藉由電磁模擬軟體來實際實現變壓功率合成器,並取得變壓器各項實際參數,代入上述驗證,去除不合理的模擬設定,使得變壓器功率合成效率最佳化。 In wireless communication system, when the microwave signal transmits in the air, the receiver could encounter the signal distortion which causes the decoding error due to the noise interference. Therefore, if we can strengthen the transmitting signal and make better signal-to-noise ratio (SNR) of the signal, we can improve the probability of correct decoding for the reason that how to make the power amplifier deliver more output power in wireless transmitter. Besides the high output power, the demand for high efficiency of the power amplifier in wireless communication system has increased because power amplifier consumes the most dc power in the transmitter. Therefore, the optimization of the efficiency becomes a key issue. Several new structures of power amplifier are proposed recently in order to achieve good linearity and efficiency. In this thesis, two circuits are designed and implemented, which are respectively an active antenna integrated with adaptive-bias power amplifier and a high Psat power amplifier with transformer power combining. The former is implemented on 0.18-μm CMOS and IPD technology operated at 24 GHz while the latter is realized by 0.18-μm CMOS technology operated at 5.2-5.7 GHz. In Chapter 2, a K-band active antenna integrated with CMOS adaptive-bias PA is proposed to improve the efficiency of the PA. This circuit includes a CMOS adaptive-bias PA and a dipole antenna; the power amplifier is realized by 0.18-µm CMOS technology and the antenna is implemented on IPD technology. The circuit design is extended version of [1]. The traditional transformer balun is selected as input bulun. And on-wafer near-field antenna measurement system using probe station is applied to the measurement of the radiation pattern of antenna under test. In Chapter 3, a high Psat power amplifier with transformer power combining is designed, and how to make the lower loss of power combiner to achieve high Psat is our focus of discussion. In this thesis, we would discuss why we select transformer as our power combiner and the analysis of how the parameters affect the characteristic of the transformer to optimize the efficiency of the transformer. In the measurement, we set up the measurement as cool as possible because the performance of the circuit will be worse as the temperature increases. And we implement the second version of layout for more heat dissipation to make better power performance. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/59690 |
DOI: | 10.6342/NTU201700593 |
全文授權: | 有償授權 |
顯示於系所單位: | 電信工程學研究所 |
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