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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/59247
標題: | 高效能熱電元件研究 Investigation of High Efficiency Thermoelectric Devices |
作者: | Fu-An Tsai 蔡輔安 |
指導教授: | 廖洺漢(Ming-Han Liao) |
關鍵字: | 塞貝克係數,熱電優值,碲化鉍,曝光微影,乾蝕刻, Seebeck coefficient,ZT,bismuth telluride,photolithography,dry etching, |
出版年 : | 2017 |
學位: | 碩士 |
摘要: | 本論文為製作高效能的熱電元件,藉由選用最佳的熱電材料,並分析實驗室做出的熱電元件相關係數,如絕對塞貝克係數 (absolute Seebeck coefficient)、導電率 (electrical conductivity),最終算出熱電優值 (Figure of merit, ZT),另外嘗試將二維結構的熱電元件改成三維結構以增加接觸表面積來提升整體熱電效能。量測熱電元件相關係數的部分,本論文藉由直流電源供應器 (DC power supply)、可控溫載盤、致冷晶片、熱電偶、Keithley 2400 Source/Meter機台及Agilent 34972A機台量測絕對塞貝克係數 (Absolute Seebeck coefficient),同時利用四點探針量測技術 (4-point probes method) 搭配上述機台進行各溫度下熱電元件之導電率 (electrical conductivity) 量測;三維結構熱電元件部分,主要利用電漿輔助化學氣相沉積技術 (PECVD) 進行底層二氧化矽 (SiO2) 絕緣層的沉積、三道的曝光微影技術 (photolithography) 搭配磁控濺鍍沉積技術 (magnetron sputtering deposition) 製作出鈦 (Titanium) 及鉑 (Platnium) 的下電極、碲硒化鉍 (Bi2.0Te2.7Se0.3) 的N型柱狀結構、碲銻化鉍 (Bi0.4Te3.0Sb1.6) 的P型柱狀結構,最後在使用一次曝光微影技術 (photolithography) 及乾式蝕刻技術 (Dry etching) 製作出懸空狀的橋型上電極,使N型熱電材料及P型熱電材料藉由上下電極串聯導通,以完成整體三維結構熱電元件。 In this thesis, in order to fabricate high efficiency thermoelectric (TE) devices, the best TE materials are chosen, some properties related to TE devices made by our laboratory will be analyzed, such as absolute Seebeck coefficient, electrical conductivity and Figure of merit (ZT) can be calculated ultimately. On the other hand, a column-type TE cooler is made to increase contact area and enhance the efficiency of TE devices compared with 2-D thin film TE devices. In the part of performance measurement, DC power supply, temperature controllable plate, TE cooler, thermal couple, equipment Keithley 2400 Source/Meter and equipment Agilent 34972A are used to obtain absolute Seebeck coefficient. Also, the electrical conductivity of 2-D thin film TE devices is evaluated by using above equipment with 4-point probes method. In the part of fabrication of a column-type TE cooler, a silicon dioxide layer is grown on the Si wafer to provide electrical insulation. Bottom connecter and columns are fabricated using magnetron-sputtering-deposited electrical and Bi2.0Te2.7Se0.3, Bi0.4Te3.0Sb1.6 films and patterned using photolithography process. The top connectors are fabricated by dry etching technique and patterned using photolithography process. By the above process, a 60 pairs of column-type TE cooler is fabricated. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/59247 |
DOI: | 10.6342/NTU201701394 |
全文授權: | 有償授權 |
顯示於系所單位: | 機械工程學系 |
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