請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58998完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 周元昉(Yuan-Fang Zhou) | |
| dc.contributor.author | Shu-Wei Lin | en |
| dc.contributor.author | 林書緯 | zh_TW |
| dc.date.accessioned | 2021-06-16T08:43:34Z | - |
| dc.date.available | 2013-09-02 | |
| dc.date.copyright | 2013-09-02 | |
| dc.date.issued | 2013 | |
| dc.date.submitted | 2013-08-22 | |
| dc.identifier.citation | 1. 張鈞策, 雙端固定電壓樑的振動理論分析, 國立台灣大學應用力學研究所碩士論文, 民國九九年七月
2. Golnaz Bassiri, “Diffusion effect of intermetallic layers on adhesion and mechanical properties of electrical contacts”, Fundamentals of Nanotechnology, pp. 1-10, 2009 3. Chee Wee Tan and Jianmin Miao, “Optimization of sputtered Cr/Au thin film for diaphragm-based mems applications”, Thin Solid Films, Vol. 517, pp. 4921-4925, 2009 4. Ingo Steingoetter and Henning Fouckhardt, ” Deep fused silica wet etching using an Au-free and stress-reduced sputter-deposited Cr hard mask”, J. Micromech. Microeng, Vol. 15, pp. 2130-2135, 2005 5. Yan Huang, Hong Qiu, Fengping Wang, Liqing Pan, Yue Tian and Ping Wu, ”Effect of annealing on the characteristics of Au/Cr bilayer films grown on glass,” Vacuum, Vol. 71, pp. 523-528, 2003 6. Nima Ghalichechian, Alireza Modafe and Reza Ghodssi, “Integration of benzocyclobutene polymers and silicon micromachined structures using anisotropic wet etching”, Journal of Vacuum Science and Technology B, Vol. 22, pp. 2439-2447, 2004 7. 楊宗樺, 石英音叉製程之研究, 國立台灣大學機械工程學研究所碩士論文, 民國一零一年七月 8. Frederik Ceyssens and Robert Puers, ” Deep etching of glass wafers usingsputtered molybdenum masks”, J. Micromech. Microeng. Vol. 19, Doi 067001, 2009 9. Ciprian Iliescu, Francis E.H. Tay and Jianmin Miao, ”Strategies in deep wet etching of pyrex glass”, Sensors and Actuators A, Vol.133, pp. 395–400, 2007 10. Joo-Young Jin, Sunghyun Yoo, Jae-Sung Bae and Yong-Kweon Kim, ” Deep wet etching of borosilicate glass and fused silica with dehydrated AZ4330 and a Cr/Au mask” J. Micromech. Microeng, Vol. 24, Doi. 015003, 2014 11. Mita M, Mita Y, Toshiyoshi H and Fujita H, ”Delay-masking process for silicon three-dimensional bulk structures trans”, IEEE Japan, Vol. 199-E, pp. 310-311, 1999 12. A Tixier, Y Mita, J P Gouy and H Fujita, “ A silicon shadow mask of deposition on isolated areas', J. Micromech. Microeng, Vol. 10, pp. 157-162, 2000 13. Matt Apanius , Pankaj B. Kaul and Alexis R. Abramson, “Silicon shadow mask fabrication for patterned metal deposition with microscale dimensions using a novel corner compensation scheme”, Sens. Actuator A, Vol. 140, pp. 168-175, 2007 14. G.Kim, B.Kim and J.Brugger, “All-photoplastic microstencil with self-alignment for multiple layer shadow-mask patterning”, Sens. Actuator A, Vol. 107, pp. 132-136, 2003 15. G.J. Burger E.J.T. Smulders , J.W. Berenschot , T.S.J. Lammerink , J.H.J. Fluitman and S. Imai b, “High-resolution shadow-mask patterning in deep holes and its application to an electrical wafer feed-through”, Sens. Actuator A, Vol. 54, pp. 669-673, 1996 16. W.J. Park, J.H. Kim, S.M. Cho , S.G. Yoon, S.J. Suh and D.H. Yoon, “High aspect ratio via etching conditions for deep trench of silicon”, Surface and Coatings Technology, Vol. 171, pp. 209-295, 2003 17. J. Brugger , C. Andreoli, M. Despont, U. Drechsler, H. Rothuizen and P. Vettiger, “Self-aligned 3D shadow mask technique for patterning deeply recessed surfaces of micro-electro-mechanical systems devices”, Sens. Actuator A, Vol. 76, pp. 329-334, 1999 18. E. van Veenendaal, K. Sato, M. Shikida and J. van suchtelen, “Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical ethching in KOH and TMAH”, Sens. Actuator A, Vol.93, pp. 219-231, 2001 19. Song-sheng Tan, Michael Reed and Hongtao Han and Robert Boudreau, “Morphology of etch hillock defects created during anisotropic etching of silicon”, J. Micromech. Microeng. Vol. 4, pp. 147-155, 1994 20. H Schroder, E Obermeier and A Steckenborn, “Micropyramidal hillcoks on KOH etched {100}silicon surfaces:formation, prevention and removal”, J. Micromech. Microeng, Vol. 4, pp. 147-155, 1994 21. Peter C. Simpson, Adam T. Woolley and Richard A. Mathies3, “Microfabrication technology for the production of capillary array electrophoresis chips”, Biomedical Microdevices, Vol 1, pp. 7-26, 1998 22. Ciprian Iliescu, Jianmin Miao and Francis E.H. Tay, “Stress control in masking layers for deep wet micromachining of Pyrex glass”, Sensors and Actuators A, Vol. 117, pp. 286–292, 2005 23. Francis E. H. Tay A Ciprian Iliescu A and Ji Jing Jianmin Miao, “Defect-free wet etching through pyrex glass using Cr/Au mask”, Microsyst Technol, Vol. 12, pp. 935–939, 2006 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58998 | - |
| dc.description.abstract | 在石英振盪器中含有一細小的石英音叉，本論文製作的石英音叉其擁有準確的振動頻率32768赫茲，本篇論文中主要是要完成此石英音叉外型以及音叉上電極的製作。
首先簡介石英音叉的振動原理與討論光罩上的設計，使石英音叉上正背面電極能精準的控制在目標位置與側電極接通；在本製程中，若正背面電極製作後有過多的偏移則會造成與側電極短路或斷路。實驗當中會利用鉻金鍍膜來當作保護層，經由氫氟酸蝕刻等其它製程後製作出石英音叉本體以及正反面電極 側電極的部分，將使用Shadow Mask(陰影遮罩)使石英音叉之側電極鍍膜成功；Shadow Mask是一加工過後的矽晶片，經氫氧化鉀、ICP等製程製作後表面區塊部分貫穿；使用時將石英音叉放置於Shadow Mask上進行鍍膜，鍍膜粒子將會經由這些中空區塊在石英音叉側壁上形成一層金屬膜。 最後實驗為在石英音叉的側邊製作電極，即為將石英音叉置入Shadow Mask上進行側電極鍍膜，再來討論所有的製作結果以及分析如何改善問題。 | zh_TW |
| dc.description.abstract | In the quartz resonator that contains a small quartz tuning fork. The quartz fork has accurate vibration frequency of 32,768 Hz. This paper is mainly to complete the production of this quartz tuning fork shape.
In order to manufacture the electrodes of the quartz fork on the right location, this thesis will discuss the design of the pattern on the mask. The error of location will cause the short or open electrodes and make the experiment fail. Cr and Au are used as hard mask for etching from HF, and the fork and the electrodes will be manufactured in this experiment. Shadow Mask will be applied to manufacture the side electrodes on the quartz. Shadow Mask is a silicon wafer and some parts of the structure in this wafer are removed by KOH and ICP. This experiment will put the quartz fork on the Shadow Mask during film deposition. The target material will fly across the tunnel and deposited on the quartz fork. In the final chapter, this thesis will analyze the problems in this experiment and propose some ideas to improve it. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T08:43:34Z (GMT). No. of bitstreams: 1 ntu-102-R99522531-1.pdf: 8270109 bytes, checksum: eca52a2e82b40aca91b0fd415ee7e325 (MD5) Previous issue date: 2013 | en |
| dc.description.tableofcontents | 誌謝 i
摘要 ii Abstract iii 目錄 iv 第一章 緒論 1 1.1 前言 1 1.2 文獻回顧 2 1.3本文目的及內容 4 第二章 光罩圖形設計 6 2.1 石英振盪器的工作原理 6 2.2 正背面電極圖形與石英相對位置誤差討論 6 2.3 Shadow Mask圖形與側電極之誤差討論 7 2.4 對準結構設計 8 第三章 石英音叉本體與正反面電極之製程設計與製作 9 3.1 正反面電極與音叉本體光罩設計 9 3.2 石英音叉本體製程規畫 10 3.3 石英音叉製作結果 16 第四章 石英音叉側邊電極之製程設計與製作 18 4.1 Shadow Mask光罩設計 18 4.2 Shadow Mask製程規劃 18 4.3 Shadow Mask製作結果 22 4.5 使用Shadow Mask在石英音叉側邊鍍膜之製程規畫 23 4.6側邊鍍膜結果討論 23 第五章結論與建議 24 參考文獻 25 附表 28 表3.1-1 HF:NH4F=2:3 T=80℃之角度與蝕刻速率對照表[6] 28 表4.1-1 KOH蝕刻速率與總蝕刻深度表 29 附圖 30 圖1.3-1 鉻金膜品質無法達到需求HF蝕刻10分鐘即會剝落 30 圖2.1-1 目標石音音叉圖 31 圖2.1-2 石英音叉截面電場示意圖[1] 32 圖2.1-3 Anti-phase mode振動示意圖[1] 32 圖2.2-1 目標石英音叉尺寸圖 33 圖2.3-1 Shadow Mask示意圖 34 圖2.4-1 光罩對準結構圖 35 圖2.4-2 兩光罩理想對準示意圖 35 圖3.1-1 音叉本體光罩圖(圖中白色為透光區，黑色為不透光區) 36 圖3.1-2 單位石英音叉薄片 37 圖3.1-3 電極光罩(圖中黑色為透光區，白色為不透光區) 38 圖3.2-1 經HF蝕刻後各阻擋層表面圖[10] 39 圖3.2-2 經HF蝕刻過後AZ4330厚度與晶片表面缺陷關係圖[10] 40 圖3.2-3 經HF蝕刻過後AZ4330硬烤時間與晶片表面缺陷關係圖[10] 41 圖3.2-4 經HF蝕刻10分鐘後去除AZ4620黃金表面圖 42 圖3.2-5 石英音叉本體製程 43 圖3.2-5 石英音叉本體製程(續) 44 圖3.2-5 石英音叉本體製程(續) 45 圖3.2-5 石英音叉本體製程(續) 46 圖3.3-1 不同光阻厚度蝕刻測試圖 48 圖3.3-2 HF蝕刻前晶片組 49 圖3.3-3 HF蝕刻後結果SEM表面圖 50 圖3.3-3 HF蝕刻後結果SEM 音叉表面圖(續) 51 圖3.3-4 HF蝕刻後結果SEM音叉剖面圖 52 圖3.3-5 HF蝕刻音叉90分鐘結果圖 53 圖3.3-6 '刮痕”照片[21] 53 圖4.1-1 KOH蝕刻光罩 54 圖4.1-2 在不同條件下KOH蝕刻後Hilllock放大圖[18] 55 圖4.1-3 KOH蝕刻光罩單一圖型尺寸圖(單位: μm) 56 圖4.1-4 製作Shadow Mask所需之第二張光罩圖 57 圖4.1-5 製作Shadow Mask所需之第二張光罩圖 58 圖4.1-6 第三張光罩單一圖型尺寸圖(單位: μm) 59 圖4.2-1 Shadow Mask製程圖 59 圖4.2-1 Shadow Mask製程圖(續) 60 圖4.2-1 Shadow Mask製程圖(續) 61 圖4.2-1 Shadow Mask製程圖(續) 62 圖4.2-1 Shadow Mask製程圖(續) 63 圖4.3-1 RIE蝕刻氮化矽50倍結果放大圖 64 圖4.3-2 ICP蝕刻後表面50倍放大圖 65 圖4.3-2 ICP蝕刻後表面50倍放大圖 66 圖4.3-3 背光模式50倍放大圖 67 圖4.3-3 背光模式50倍放大圖 68 圖4.5-1 側電極製作製程圖 69 圖4.6-1 SEM下側電極圖(石英音叉正面視角) 69 圖4.6-1 SEM下側電極圖(石英音叉正面視角) (續) 70 圖4.6-1 SEM下側電極圖(石英音叉正面視角) (續) 71 圖4.6-1 SEM下側電極圖(石英音叉正面視角) (續) 72 圖4.6-2 SEM下側電極圖(石英音叉背面視角) 73 圖4.6-2 SEM下側電極圖(石英音叉背面視角) (續) 74 圖4.6-2 SEM下側電極圖(石英音叉背面視角) (續) 75 圖4.6-2 SEM下側電極圖(石英音叉背面視角) (續) 76 | |
| dc.language.iso | zh-TW | |
| dc.subject | 側電極 | zh_TW |
| dc.subject | 石英音叉 | zh_TW |
| dc.subject | 陰影遮罩 | zh_TW |
| dc.subject | 鉻金鍍膜 | zh_TW |
| dc.subject | 氫氧化鉀蝕刻 | zh_TW |
| dc.subject | Side eletrodes | en |
| dc.subject | Quartz Fork | en |
| dc.subject | Shadow Mask | en |
| dc.subject | Sputter | en |
| dc.subject | KOH etch | en |
| dc.title | 石英音叉之製程研究 | zh_TW |
| dc.title | The research and design of quartz fork | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 101-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張家歐(Chia-Ou Chang),謝發華(Fa-Hua Hsieh) | |
| dc.subject.keyword | 石英音叉,陰影遮罩,鉻金鍍膜,氫氧化鉀蝕刻,側電極, | zh_TW |
| dc.subject.keyword | Quartz Fork,Shadow Mask,Sputter,KOH etch,Side eletrodes, | en |
| dc.relation.page | 76 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2013-08-22 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
| 顯示於系所單位： | 機械工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-102-1.pdf 未授權公開取用 | 8.08 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。