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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 劉深淵 | |
dc.contributor.author | Yu-Hsuan Chiang | en |
dc.contributor.author | 江侑軒 | zh_TW |
dc.date.accessioned | 2021-06-16T08:19:39Z | - |
dc.date.available | 2024-02-06 | |
dc.date.copyright | 2014-03-08 | |
dc.date.issued | 2014 | |
dc.date.submitted | 2014-02-07 | |
dc.identifier.citation | [1] Y. Tokunaga, S. Sakiyama, A. Matsumoto, and S. Dosho, “An on-chip CMOS relaxation oscillator with voltage averaging feedback,” IEEE J. Solid-State Circuits, vol. 45, no. 6, pp. 1150–1158, June 2010.
[2] K.-J. Hsiao, 'A 32.4 ppm/°C 3.2-1.6V self-chopped relaxation oscillator with adaptive supply generation,' Dig. Symp. VLSI Circuits, pp. 14–15, June 2012. [3] K. Choe, O. D. Bernal, D. Nuttman, and M. Je, “A precision relaxation oscillator with a self-clocked offset-cancellation scheme for implantable biomedical SoCs,” in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2009, pp. 402–403. [4] T. Tokairin, K. Nose, K. Takeda, K. Noguchi, T. Maeda, K. Kawai and M. Mizuno, 'A 280nW, 100kHz, 1-cycle start-up time, on-chip CMOS relaxation oscillator employing a feed-forward period control scheme,' Dig. Symp. VLSI Circuits, June 2012, pp. 16–17. [5] U. Denier, “Analysis and design of an ultralow-power CMOS relaxation oscillator,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 57, no. 8, pp. 1973–1982, Aug. 2010. [6] F. Sebastiano, L. J. Breems, K. A. A. Makinwa, S. Drago, D. M. W. Leenaerts, and B. Nauta, “A low-voltage mobility-based frequency reference for crystal-less ULP radios,” IEEE J. Solid-State Circuits, vol. 44, no. 7, pp. 2002–2009, July 2009. [7] Y. Cao, P. Leroux, W. De Cock, and M. Steyaert, “A 63,000 Q-factor relaxation oscillator with switched-capacitor integrated error feedback,” in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2013, pp. 402–403. [8] A. Paidimarri, D. Griffith, A. Wang, A. P.Chandrakasan, and G. Burra, “A 120nW 18.5kHz RC oscillator with comparator offset cancellation for ±0.25% temperature stability,” in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2013, pp. 402–403. [9] J. Lee and S. Cho., “A 10MHz 80uW 67 ppm/°C CMOS reference clock oscillator with a temperature compensated feedback loop in 0.18um CMOS,” Dig. Symp. VLSI Circuits, June 2009, pp. 226–227. [10] V. De Smedt, P. De Wit, W. Vereecken, and M. S. J. Steyaert, “A 66 uW 86 ppm/°C fully-integrated 6 MHz Wienbridge oscillator with a 172 dB phase noise FOM,” IEEE J. Solid-State Circuits, vol.44, no.7, pp. 1990–2001, July 2009. [11] B. R. Gregoire and U.-K. Moon, “Process-independent resistor temperature-coefficients using series/parallel and parallel/series composite resistors,” in Proc. ISCAS, May 2007, pp. 2826–2829. [12] K. Ueno, T. Hirose, T. Asai, and Y. Amemiya, ” A 300 nW, 15ppm/°C, 20ppm/V CMOS voltage reference circuit consisting of subthreshold MOSFETs,” IEEE J. Solid-State Circuits, vol. 44, no.7, pp. 2047–2054, July 2009. [13] G. Giustolisi, G. Palumbo, M. Criscione, and F. Cutri, “A low-voltage low-power voltage reference based on subthreshold MOSFETs,” IEEE J. Solid-State Circuits, vol. 38, no. 1, pp. 151–154, Jan. 2003. [14] F. Sebastiano, L.J. Breems, K.A.A. Makinwa, S. Drago, D.M.W. Leenaerts, and B. Nauta, “A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks,” IEEE J. Solid-State Circuits, vol. 46, no.7, pp. 1544–1552, July 2011. [15] Y. H. Chiang and S. I. Liu, “A submicrowatts 1.1MHz CMOS relaxation oscillator with temperature compensation,” IEEE Trans. Circuits and Systems-II: Express Briefs, vol. 60, no.12, pp. 837–841, Dec. 2013. [16] W. Yan , W. Li and R. Liu, 'Nanopower CMOS sub-bandgap reference with 11ppm/°C temperature coefficient,' Electron. Lett., vol. 45, no.12, pp. 627–629, June 2009. [17] N. Sadeghi, A. Sharif-Bakhtiar, and S. Mirabbasi “A 0.007-mm2 108-ppm/°C 1-MHz relaxation oscillator for high-temperature applications up to 180°C in 0.13-um CMOS,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 60, no.7, pp. 1692–1701, July 2013. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58553 | - |
dc.description.abstract | 這篇論文的主題主要分為兩個部分,第一個部分是設計一個低於微瓦且低溫度係數的弛張振盪器,此電路運用電晶體工作在次臨界區,電流模式的比較器以及汲取電流式反向器來減少消耗的功率。且汲取電流式反向器是利用跟絕對溫度成正比以及跟絕對溫度成反比的電流源相加來減少其對溫度的變異。利用電阻的串並聯和跟絕對溫度成正比以及跟絕對溫度成反比的電流源來更進一步的降低溫度係數。量測的平均溫度係數為64.3ppm/°C,功率優值為0.78nW/kHz。
第二部分利用不同閘極氧化層厚度的電晶體來實做低溫度係數的電流源和曲度電流源使得振盪器有低溫度係數。在0.18-μm CMOS的製程中,完成了振盪頻率為1.4M赫茲和28k赫茲的振盪器。1.4M赫茲的振盪器中,在1.2伏特的供給電壓下,消耗功率為615nW,在-20~80°C平均的量測溫度係數為56.4ppm/°C 計算的第一優值和第二優值分別為124dB 和 103dB。28k赫茲的振盪器中,在1.2伏特的供給電壓下,消耗功率為40.2nW,在-20~80°C平均的量測溫度係數為95.5ppm/°C 計算的第一優值和第二優值分別為119dB 和 92dB。 | zh_TW |
dc.description.abstract | This thesis consists of two parts. The first part aims to design a submicrowatts and low temperature coefficient (TC) relaxation oscillator. In this oscillator, the transistors in the subthreshold region, the current-mode comparator, and the current-starving inverters are used to reduce the power of the relaxation oscillator. The current-starving inverters are biased by using the PTAT and CTAT current sources to release the temperature variations. The parallel/series composite resistor and the PTAT/CTAT current sources are also used to further reduce the temperature coefficient. The average temperature coefficient is 64.3ppm/°C for the temperature of -20~80°C, and the calculated power FOM is 0.78nW/kHz.
The second part implements the low TC current reference and curvature current source with different gate-oxide thickness mosfets to realize the oscillators with low TCs. Two oscillators of 1.4MHz and 28kHz are fabricated in a 0.18-μm CMOS process. For the 1.4MHz oscillator, its power is 615nW with a supply voltage of 1.2V. The measured average TC is 56.4ppm/°C for the temperature of -20~80°C. The calculated FOM1 and FOM2 are 124dB and 103dB, respectively. For the 28kHz oscillator, its power is 40.2nW with a supply voltage of 1.2V. The measured average TC is 95.5ppm/°C for the temperature of -20~80°C. The calculated FOM1 and FOM2 are 119dB and 92dB, respectively. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T08:19:39Z (GMT). No. of bitstreams: 1 ntu-103-R00943132-1.pdf: 3443831 bytes, checksum: 739dfcaefce26811a1bece1fbc3d9c99 (MD5) Previous issue date: 2014 | en |
dc.description.tableofcontents | 1. Introduction………………………………………………………… 1
1.1 On-chip Oscillators…….……………………………………. 1 1.2 Overview…………………………………………………….. 2 2. A Submicrowatts 1.1MHz CMOS Relaxation Oscillator with Temperature Compensation………………………….. 4 2.1 Motivation…………………………………………………… 4 2.2 Circuit Architecture………………………………………….. 5 2.2.1 Overview of the Approach…………………………... 5 2.2.2 PTAT Current Reference…………………………….. 6 2.2.3 CTAT Current Reference.……………………………. 8 2.2.4 Oscillators…………………………………………..... 10 2.2.5 Resistors……………………………………………... 12 2.2.6 Clock Buffer…………………………………………. 15 2.3 Experimental Results………………………………………… 17 2.3.1 Measurement Results………………………………... 17 2.3.2 Die Photo and Performance Summary……………..... 19 2.4 Conclusion……………………….…….…….…….……...…. 21 3. Nanopower CMOS Relaxation Oscillators with Sub-100ppm/°C Temperature Coefficient……………………………… 22 3.1 Motivation…………………………………………………… 22 3.2 Circuit Architecture…………………………………….……. 23 3.2.1 Overview of the Approach…………………….…….. 23 3.2.2 Low TC Current Reference………………….………. 24 3.2.3 Curvature Current Source…………………...………. 27 3.2.4 A 1.4MHz Oscillator………………………………… 29 3.2.5 A 28kHz Oscillator………………………………….. 33 3.3 Experimental Results………………………………………… 35 3.3.1 Measurement Results………………………………... 35 3.3.2 Die Photo and Performance Summary……………..... 37 3.4 Conclusion……………………….…….…….…….……...…. 40 4. Conclusion and Future Work……………………………………… 41 4.1 Conclusion…………………………………………………… 41 4.2 Future Work…………………………………………………. 42 Bibliography ……………………………………………………………… 43 | |
dc.language.iso | en | |
dc.title | 溫度補償的毫微功耗振盪器 | zh_TW |
dc.title | Nanopower Oscillators with Temperature Compensation | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 汪重光,陳巍仁,鄭國興,林宗賢 | |
dc.subject.keyword | 低功耗,振盪器,溫度補償, | zh_TW |
dc.subject.keyword | low power,oscillator,temperature compensation, | en |
dc.relation.page | 45 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2014-02-07 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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