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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/57871
標題: | 快閃記憶體之漸進式平均抹除演算法 PWL: A Progressive Wear Leveling to Minimize Data Migration Overheads for NAND Flash Devices |
作者: | Fu-Hsin Chen 陳富信 |
指導教授: | 郭大維(Tei-Wei Kuo) |
關鍵字: | 儲存系統,快閃記憶體,效能,損耗均衡, storage system,flash memory,performance,wear leveling, |
出版年 : | 2014 |
學位: | 碩士 |
摘要: | 隨著儲存裝置壽命的持續減少,設計快閃記憶體管理層之損耗均衡機制已儼然成為一個重要的議題。隨著高密度快閃記憶體效能的持續下降,在實行損耗均衡機制時所產生之效能損失將會造成不可忽視的影響。不同於以往憑藉特定條件積極地平均使用快閃記憶體之設計,我們提出了一個「漸進式」的方法來延長快閃記憶體的使用壽命並且同時減少不必要的資料搬移所帶來的效能下降。這個機制不僅顯著地減少損耗均衡機制在早期使用時所帶來的影響,而且藉由在晚期積極地實行來延長壽命。最後,藉由一系列之實驗,我們發現所提出之方法不僅可以減少損耗均衡機制所帶來的效能下降,並且有機會可以延長壽命。 As the endurance of flash memory keeps deteriorating, exploiting wear leveling techniques to improve the lifetime/endurance of flash memory has become a critical issue in the design of flash storage devices. Nevertheless, the deteriorated access performance of high-density flash memory makes the performance overheads introduced by wear leveling non-negligible. In contrast to existing wear-leveling techniques that aggressively distributes the erases to all flash blocks evenly in a regular basis, we propose a progress wear leveling design to perform wear leveling in a ``progressive' way to prevent any block from being worn out prematurely, and to ultimately minimize the performance overheads caused by the unnecessary data migration imposed by the aggressive wear leveling in the early stage of the device lifespan or imposed by the improper selection of victim blocks for erases. The experiments were conducted based on representative realistic workloads to evaluate the efficacy of the proposed scheme. The results reveal that instead of sacrificing the device lifetime, performing wear leveling in such a progressive way can not only minimize the performance overheads but even have potentials to extend the device lifetime. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/57871 |
全文授權: | 有償授權 |
顯示於系所單位: | 資訊工程學系 |
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