請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/57331
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 薛文証(Wen-Jeng Hsueh) | |
dc.contributor.author | Bing-Siang Chao | en |
dc.contributor.author | 趙秉祥 | zh_TW |
dc.date.accessioned | 2021-06-16T06:41:57Z | - |
dc.date.available | 2019-08-13 | |
dc.date.copyright | 2014-08-13 | |
dc.date.issued | 2014 | |
dc.date.submitted | 2014-07-29 | |
dc.identifier.citation | [1]K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306, 666-9 (2004).
[2]K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad .Sci. U.S.A. 102, 10451-3 (2005). [3]L. Esaki and R. Tsu, “Superlattice and negative differential conductivity in semiconductors,” IBM J. Res. Dev. 14, 61-65 (1970). [4]P. J. Dobson, “Superlattice to nanoelectronics, by raphael tsu,” Cont. Phys. 53, 272-273 (2012). [5]C.-H. Park, L. Yang, Y.-W. Son, M. L. Cohen, and S. G. Louie, “Anisotropic behaviours of massless dirac fermions in graphene under periodic potentials,” Nat. Phys. 4, 213-217 (2008). [6]M. I. Katsnelson, K. S. Novoselov, and A. K. Geim, “Chiral tunnelling and the klein paradox in graphene,” Nat. Phys. 2, 620-625 (2006). [7]H. W. Kroto, J. R. Heath, S. C. O'Brien, R. F. Curl, and R. E. Smalley, “C60: Buckminsterfullerene,” Nature 318, 162-163 (1985). [8]S. Iijima, “Helical microtubules of graphitic carbon,” Nature 354, 56-58 (1991). [9]P. Wallace, “The band theory of graphite,” Phys. Rev. 71, 622-634 (1947). [10]L.-G. Wang and S.-Y. Zhu, “Electronic band gaps and transport properties in graphene superlattices with one-dimensional periodic potentials of square barriers,” Phys. Rev. B 81, (2010). [11]M. Ramezani Masir, P. Vasilopoulos, and F. M. Peeters, “Fabry-perot resonances in graphene microstructures: Influence of a magnetic field,” Phys. Rev. B 82, (2010). [12]P.-L. Zhao and X. Chen, “Electronic band gap and transport in fibonacci quasi-periodic graphene superlattice,” Appl. Phys. Lett. 99, 182108 (2011). [13]T. Ma, C. Liang, L.-G. Wang, and H.-Q. Lin, “Electronic band gaps and transport in aperiodic graphene superlattices of thue-morse sequence,” Appl. Phys. Lett. 100, 252402 (2012). [14]J. Tworzydło, B. Trauzettel, M. Titov, A. Rycerz, and C. Beenakker, “Sub-poissonian shot noise in graphene,” Phys. Rev. Lett. 96, (2006). [15]C. Beenakker and M. Buttiker, “Suppression of shot noise in metallic diffusive conductors,” Phys. Rev. B 46, 1889-1892 (1992). [16]M. F. Borunda, H. Hennig, and E. J. Heller, “Ballistic versus diffusive transport in graphene,” Phys. Rev. B 88, (2013). [17]J. H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, “Intrinsic and extrinsic performance limits of graphene devices on sio2,” Nat Nanotechnol 3, 206-9 (2008). [18]S. Morozov, K. Novoselov, M. Katsnelson, F. Schedin, D. Elias, J. Jaszczak, and A. Geim, “Giant intrinsic carrier mobilities in graphene and its bilayer,” Phys. Rev. Lett. 100, (2008). [19]A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. N. Lau, “Superior thermal conductivity of single-layer graphene,” Nano Lett. 8, 902-907 (2008). [20]R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres, and A. K. Geim, “Fine structure constant defines visual transparency of graphene,” Science 320, 1308 (2008). [21]C. Soldano, A. Mahmood, and E. Dujardin, “Production, properties and potential of graphene,” Carbon 48, 2127-2150 (2010). [22]S. M. M. Dubois, Z. Zanolli, X. Declerck, and J. C. Charlier, “Electronic properties and quantum transport in graphene-based nanostructures,” Eur. Phys. J. B. 72, 1-24 (2009). [23]A. H. Castro Neto, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, “The electronic properties of graphene,” Rev. Mod. Phys. 81, 109-162 (2009). [24]Y.-W. Son, M. L. Cohen, and S. G. Louie, “Energy gaps in graphene nanoribbons,” Phys. Rev. Lett. 97, (2006). [25]D. Wei, Y. Liu, Y. Wang, H. Zhang, L. Huang, and G. Yu, “Synthesis of n-doped graphene by chemical vapor deposition and its electrical properties,” Nano Lett. 9, 1752-1758 (2009). [26]T. Martin and R. Landauer, “Wave-packet approach to noise in multichannel mesoscopic systems,” Phys. Rev. B 45, 1742-1755 (1992). [27]T. Ihn, “Semiconductor Nanostructures: Quantum States and Electronic Transport”, Oxford University Press, Oxford, (2009). [28]M. Reznikov, R. d. Picciotto, T. G. Griffiths, M. Heiblum, and V. Umansky, “Observation of quasiparticles with one-fifth of an electron's charge,” Nature 399, 238-241 (1999). [29]L. Saminadayar, D. C. Glattli, Y. Jin, and B. Etienne, “Observation of the e/3 fractionally charged laughlin quasiparticle,” Phys. Rev. Lett. 79, 2526-2529 (1997). [30]X. Jehl, M. Sanquer, R. Calemczuk, and D. Mailly, “Detection of doubled shot noise in short normal-metal/ superconductor junctions,” Nature 405, 50-53 (2000). [31]F. Benatti, R. Floreanini, and U. Marzolino, “Sub-shot-noise quantum metrology with entangled identical particles,” Ann. Phys. 325, 924-935 (2010). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/57331 | - |
dc.description.abstract | 本論文建構了石墨烯超晶格裡電子的傳播行為模型,推演出電子在結構裡的穿透率,並藉由穿透率為媒介推導超晶格中的電流、微分電導以及范諾因數等公式。本文注意到石墨烯超晶格結構會產生新的狄拉克點,其發生在均零波數上,且其位置不受晶格常數變化,只會隨著超晶格的層與層間寬度比與位能障壁高而改變,並且均零波數能隙會隨晶格常數與位能障壁高的增加而開闔,但其位置並不會隨晶格常數變化而只會與入射角有些微相關,除此之外提高超晶格的周期數有助於凸顯在能隙上穿透率跌落的幅度,以及當超晶格摻有其他雜質或是亂序時,均零波數能隙的位置仍會較其他位置的能隙穩定,在其中還有可能會產生缺陷模態,造成在能隙中產生穿透率以及電導突起的現象,藉由以上幾點讓新狄拉克點的存在有助於科學家設計出以石墨烯為基底的電子元件。 | zh_TW |
dc.description.abstract | The behaviors of electrons in graphene superlattice such as transmission spectra, current, differential conductance, and Fano factor has been studied by using tight-binding method, Dirac-like Hamiltonian approximation, and transfer-matrix method. It’s found that there are some new Dirac points in graphene superlattices. New Dirac points occur at zero-averaged wave-number. Besides, their locations don’t change when lattice constants are changing. In fact, they only change with layer width ratios of superlattices and barrier heights of superlattices. The zero-averaged wave-number gaps are opened or closed when lattice constants are changing. But the positions of the gaps don’t also change when lattice constants are changing. However, they change slight with the angles of incidence. In addition, the magnitudes of transmission decrease with the increasing numbers of cells. Moreover, even though there are defects or disorders in grpahene superlattices, the positions of zero-averaged wave-number gaps are more stable than the other gaps. Defect modes which cause special transmission and conductance peaks in zero-averaged wave-number gaps are probably also generated. All characteristics mentioned above can be used to design graphene-based electronic devices. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T06:41:57Z (GMT). No. of bitstreams: 1 ntu-103-R01525035-1.pdf: 2739954 bytes, checksum: 72a2970c983a0535ed40485cbeb2787d (MD5) Previous issue date: 2014 | en |
dc.description.tableofcontents | 中文摘要 i
英文摘要 ii 目錄 iii 圖目錄 v 符號表 viii 第一章 導論 1 1.1 背景與研究動機 1 1.2 歷史文獻回顧 2 1.3 論文架構 3 第二章 單分子層石墨烯的電子特性 4 2.1 石墨烯的基本特性 4 2.2 石墨烯的晶格結構 4 2.2.1 蜂巢狀晶格 4 2.2.2 實空間晶格向量 5 2.2.3 倒晶格向量 5 2.3 石墨烯的能帶結構 6 2.3.1 布洛赫定理 6 2.3.2 緊束縛法 7 2.4 石墨烯的類狄拉克漢彌爾頓算符 15 2.4.1 近狄拉克點之轉移積分矩陣 15 2.5 類漢彌爾頓算符之能量本徵值及波函數特徵向量 19 2.5.1 準自旋子及波函數 19 2.5.2 電子群速度 21 第三章. 石墨烯超晶格的電子傳輸 26 3.1 轉換矩陣法 26 3.1.1 邊界條件 26 3.1.2 有限層數性結構之穿透率 28 3.1.3 無限週期性結構之能帶結構 30 第四章 電流與電導以及范諾因數 34 4.1 平均電流以及電導之理論模型 34 4.1.1 Landauer波包近似與電流脈衝 34 4.1.2 平均電流與微分電導 35 4.1.3 絕對零度與微小橫向偏壓下的電流與電導近似 39 4.2 散粒雜訊以及范諾因數之理論模型 40 4.2.1 電流雜訊的性質 40 4.2.2 電流脈衝與電流雜訊頻譜密度 41 4.2.3 散粒雜訊與范諾因數 47 第五章 多位障石墨烯結構電子特性 51 5.1 單位障之石墨烯結構 51 5.2 雙位障之石墨烯結構 52 5.3 週期性位障之石墨烯結構 53 5.4 非週期性位障之石墨烯結構 55 第六章 結論與未來展望 72 6.1 結論 72 6.2 未來展望 73 參考文獻 74 | |
dc.language.iso | zh-TW | |
dc.title | 石墨烯超晶格之電子傳輸特性 | zh_TW |
dc.title | Electronic Transport Properties of Graphene Superlattices | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 鄭勝文(Sheng-Weng Cheng),余宗興(Tsung-Hsing Yu),黃俊穎(Chun-Ying Huang) | |
dc.subject.keyword | 石墨烯,緊束縛法,克萊恩傳輸,超晶格,范諾因數, | zh_TW |
dc.subject.keyword | graphene,tight-binding method,Klein tunneling,superlattice,Fano factor, | en |
dc.relation.page | 77 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2014-07-29 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
顯示於系所單位: | 工程科學及海洋工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-103-1.pdf 目前未授權公開取用 | 2.68 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。