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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳奕君 | |
dc.contributor.author | Chun-Hsiang Chen | en |
dc.contributor.author | 陳俊翔 | zh_TW |
dc.date.accessioned | 2021-06-16T05:27:21Z | - |
dc.date.available | 2019-07-01 | |
dc.date.copyright | 2014-09-04 | |
dc.date.issued | 2014 | |
dc.date.submitted | 2014-08-14 | |
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Cabot, A., et al., Surface states in template synthesized tin oxide nanoparticles. Journal of applied physics, 2004. 95(4): p. 2178-2180. 70. Sivaramasubramaniam, R., M. Muhamad, and S. Radhakrishna, Optical properties of annealed tin (II) oxide in different ambients. physica status solidi (a), 1993. 136(1): p. 215-222. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/56411 | - |
dc.description.abstract | 本論文討論在不同生長條件與不同退火環境下,氧化亞錫薄膜的晶相、結晶度、穿透度、表面粗糙度與電特性的分析。並且探討氮氧混合氣與水氣退火,不同退火環境之下的特性變化,從調變不同氧含量比例開始探討,進而調變不同鍍膜工作壓力、不同退火溫度,找出最佳的製程條件。
本實驗使用射頻磁控濺鍍系統在室溫下成長氧化亞錫薄膜,以純度99.999%的金屬錫為靶材,並調控濺鍍時的工作壓力與氧含量比例。在薄膜的晶相分析中,氧化亞錫薄膜的主要峰值位置會受到工作壓力與氧含量比例影響,高工作壓力或高氧含量比例主峰位置會出現在(101)上,低工作壓力或低氧含量比例主峰位置會出現在(110)上,而且薄膜的主峰位置在鍍膜的時候就已經決定好了,在退火溫度205°C~265°C範圍之內,薄膜的主要峰值位置不受退火環境影響。在電子能譜分析中,退火環境氮氧混合氣的氧氣量增加或是退火溫度增加,薄膜內氧鍵結的比例也會增加,通入水氣之後,氧氣的鍵結比例增加更明顯。 由實驗的結果,要減少常溫濺鍍所產成的缺陷,比較可行的溫度位在225°C~245°C之間,在此溫度範圍內有較低的載子濃度,如果要有較高的載子遷移率,溫度範圍必須控制在225°C附近,因為退火溫度提高也使得載子濃度增加,不利載子的傳遞。整體而言,通入水氣之後薄膜的載子遷移率會略降,因為水氣會促進薄膜氧化,除了減少薄膜內金屬錫的含量,也增加了薄膜內的缺陷,以至於載子濃度增加。 | zh_TW |
dc.description.abstract | This thesis reports the experimental results regarding the tin monoxide (SnO) thin films were deposited by RF-sputtering technique. We investigated the crystallinity, optical transmittance, surface morphology and electrical properties of tin monoxide thin film under various deposition conditions and annealing atmospheres.
SnO thin films were sputter-deposited on glass substrates under various O2/Ar flow ratios and sputtering pressures at room temperature. First, we investigated the influence of O2/Ar flow ratios on the films' properties. Higher oxygen reduced the content of β–Sn phase, leading to higher purity of tin monoxide. From the analysis of the crystal phases of SnO thin films, the main peak position was influenced by the O2/Ar flow ratios and pressure. As the O2/Ar flow ratios and pressure increased, the main peak position was shifted from (110) to (101), but the main peak positions were not influenced by annealing conditions. The proportion of oxygen in the films was increased with the annealing temperature or the oxygen content of the atmosphere. Compared to other annealing conditions, water vapor annealing can much effectively increase the oxygen content in the films. Overall, the Hall mobility decreased slightly after annealing in water vapor environment, because the water vapor promoted the oxidation of SnO films, not only reducing the metal tin content of SnO films, but also increasing the defects of SnO films. Therefore, the bulk carrier concentration increased, and hall mobility was decreased. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T05:27:21Z (GMT). No. of bitstreams: 1 ntu-103-R01941034-1.pdf: 12134359 bytes, checksum: 9ce90871dc40e5dbbae2c77a8c662018 (MD5) Previous issue date: 2014 | en |
dc.description.tableofcontents | 目錄
誌謝 I 摘要 II Abstract III 目錄 IV 圖目錄V II 表目錄 X 第一章:緒論 1 1.1前言 1 1.2研究動機 2 1.3論文架構 3 第二章:材料特性與文獻回顧 4 2.1 p型透明金屬氧化物之歷史與發展 4 2.2錫氧化物之歷史與發展 5 2.3氧化亞錫的發展 7 2.4氧化亞錫材料特性與結構 9 2.5氧化亞錫能隙與缺陷 11 2.6錫-氧系統相圖 13 第三章:製備方法與量測 16 3.1薄膜沉積方法 16 3.1.1射頻磁控濺鍍 16 3.1.2電子束蒸鍍 18 3.2量測分析 19 3.2.1 X射線繞射儀 19 3.2.2霍爾效應與范德堡方法 20 3.2.3表面輪廓儀 22 3.2.4原子力顯微鏡 23 3.2.5掃描式電子顯微鏡 25 3.2.6 X射線光電子能譜儀 27 3.2.7紫外光/可見光光譜儀 28 3.2.8電性量測 29 3.2.9 Seebeck量測 29 3.3試片製程 30 3.3.1 X射線繞射試片 30 3.3.2微影製程 32 3.3.3霍爾效應與范德堡方法量測試片 33 第四章:實驗結果與討論 36 4.1不同氧含量比例之氧化亞錫薄膜特性分析 36 4.1.1成分與晶相分析 36 4.1.2表面型態分析 39 4.1.3電特性分析 41 4.2不同鍍膜壓力之氧化亞錫薄膜特性分析 45 4.2.1 2 mtorr 45 4.2.2 4 mtorr 54 4.2.3 5 mtorr 63 4.3不同退火溫度之氧化亞錫薄膜特性分析 72 4.3.1 205°C 72 4.3.2 245°C 79 4.3.3 265°C 88 4.4 綜合比較 96 4.4.1不同退火溫度的晶相分析 96 4.4.2不同工作壓力的晶相分析 100 4.4.3不同退火溫度的光學穿透分析 102 4.4.4 X射線光電子能譜分析 120 4.4.5表面形態分析 123 4.4.6霍爾量測與Seebeck 125 第五章:結論與未來展望 129 5.1結論 129 5.2未來展望 131 參考文獻 132 | |
dc.language.iso | zh-TW | |
dc.title | 射頻磁控濺鍍法製作之氧化亞錫薄膜特性之研究 | zh_TW |
dc.title | Characterization of RF Magnetron Sputtered SnO Thin Films | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳建彰,吳志毅,吳育任,李偉立 | |
dc.subject.keyword | 射頻磁控濺鍍法,氧化亞錫,水氣退火,霍爾效應, | zh_TW |
dc.subject.keyword | radio-frequency magnetron sputtering,tin monoxide,water vapor annealing,hall effect, | en |
dc.relation.page | 136 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2014-08-14 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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