請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55964
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 鄭如忠 | |
dc.contributor.author | Fang-Ying Hsu | en |
dc.contributor.author | 徐芳瑩 | zh_TW |
dc.date.accessioned | 2021-06-16T05:11:49Z | - |
dc.date.available | 2019-08-25 | |
dc.date.copyright | 2014-08-25 | |
dc.date.issued | 2014 | |
dc.date.submitted | 2014-08-18 | |
dc.identifier.citation | [1] http://www.orgalight.com/Orgalight/PageSite/electronic.php
[2] A. Tsumura, H. Koezuka and T. Ando, Applied Physics Letters 1986, 49, 1210-1212. [3] B. Kumar, B. K. Kaushik and Y. S. Negi, Polymer Reviews 2014, 54, 33-111. [4] G. Horowitz, Advanced Materials 1998, 10, 365-377. [5] J. A. Rogers, Z. Bao, K. Baldwin, A. Dodabalapur, B. Crone, V. Raju, V. Kuck, H. Katz, K. Amundson and J. Ewing, Proceedings of the National Academy of Sciences 2001, 98, 4835-4840. [6] D. Elkington, N. Cooling, W. Belcher, P. Dastoor and X. Zhou, Electronics 2014, 3, 234-254. [7] 《工業技術與資訊》月刊, 2010 , 226 期, p. 25. [8] R. P. Ortiz, A. Facchetti and T. J. Marks, Chemical Reviews 2009, 110, 205-239. [9] C. R. Newman, C. D. Frisbie, D. A. da Silva Filho, J.-L. Bredas, P. C. Ewbank and K. R. Mann, Chemistry of Materials 2004, 16, 4436-4451. [10] B. Lucas, T. Trigaud and C. Videlot-Ackermann, Polymer International 2012, 61, 374-389. [11] A. Facchetti and T. J. Marks, Material Matters (Milwaukee) 2009, 4, 64-67. [12] http://www.cstf.kyushu-u.ac.jp/~adachilab/lab/?page_id=3898 [13] Y. Zhao, Y. Guo and Y. Liu, Advanced Materials 2013, 25, 5372-5391. [14] L. Resendiz, M. Estrada, A. Cerdeira, B. Iniguez and M. J. Deen, Organic Electronics 2010, 11, 1920-1927. [15] G. Guillaud, M. Al Sadoun, M. Maitrot, J. Simon and M. Bouvet, Chemical Physics Letters 1990, 167, 503-506. [16] J. Zaumseil and H. Sirringhaus, Chemical reviews 2007, 107, 1296-1323. [17] L. Qiu, Q. Xu, W. H. Lee, X. Wang, B. Kang, G. Lv and K. Cho, Journal of Materials Chemistry 2011, 21, 15637-15642. [18] P. Lutsyk, K. Janus, M. Mikołajczyk, J. Sworakowski, B. Boratyński and M. Tłaczała, Organic Electronics 2010, 11, 490-497. [19] H. E. Katz, A. J. Lovinger and J. G. Laquindanum, Chemistry of Materials 1998, 10, 457-459. [20] H. Tian, J. Wang, J. Shi, D. Yan, L. Wang, Y. Geng and F. Wang, Journal of Materials Chemistry 2005, 15, 3026-3033. [21] S.-W. Jung, S.-M. Yoon, S. Y. Kang, I.-K. You, J. B. Koo, K.-J. Baeg and Y.-Y. Noh, Current Applied Physics 2011, 11, S213-S218. [22] Y. Li, S. P. Singh and P. Sonar, Advanced Materials 2010, 22, 4862-4866. [23] J. Min, B. Peng, Y. Wen, Z.-G. Zhang, M. Zhang, J. Zhang, Q. Xie, Y. Liu and Y. Li, Synthetic Metals 2011, 161, 1832-1837. [24] P. S. Abthagir, Y.-G. Ha, E.-A. You, S.-H. Jeong, H.-S. Seo and J.-H. Choi, The Journal of Physical Chemistry B 2005, 109, 23918-23924. [25] Z. Bao, A. Dodabalapur and A. J. Lovinger, Applied Physics Letters 1996, 69, 4108-4110. [26] M. Halik, H. Klauk, U. Zschieschang, T. Kriem, G. Schmid, W. Radlik and K. Wussow, Applied Physics Letters 2002, 81, 289-291. [27] H. Fukuda, M. Ise, T. Kogure and N. Takano, Thin Solid Films 2004, 464–465, 441-444. [28] H. Jia, S. Gowrisanker, G. K. Pant, R. M. Wallace and B. E. Gnade, Journal of Vacuum Science & Technology A 2006, 24, 1228-1232. [29] Y. Chen and I. Shih, Organic Electronics 2007, 8, 655-661. [30] X. Xiao, Z. Hu, Z. Wang and T. He, The Journal of Physical Chemistry B 2009, 113, 14604-14610. [31] M. Leufgen, U. Bass, T. Muck, T. Borzenko, G. Schmidt, J. Geurts, V. Wagner and L. W. Molenkamp, Synthetic Metals 2004, 146, 341-345. [32] C. D. Dimitrakopoulos, B. K. Furman, T. Graham, S. Hegde and S. Purushothaman, Synthetic Metals 1998, 92, 47-52. [33] L. Torsi, F. Marinelli, M. D. Angione, A. Dell’Aquila, N. Cioffi, E. D. Giglio and L. Sabbatini, Organic Electronics 2009, 10, 233-239. [34] L. Burgi, T. J. Richards, R. H. Friend and H. Sirringhaus, Journal of Applied Physics 2003, 94, 6129-6137. [35] Q. Qi, A. Yu, P. Jiang and C. Jiang, Applied Surface Science 2009, 255, 5096-5099. [36] C.-H. Wang, C.-Y. Hsieh and J.-C. Hwang, Advanced Materials 2011, 23, 1630-1634. [37] J.-M. Choi, K. Lee, D. Hwang, J. H. Park, E. Kim and S. Im, Electrochemical and Solid-State Letters 2006, 9, G289-G291. [38] D. SAIKIA, Journal of Forntline Research 1, 100-104. [39] S. Handa, E. Miyazaki, K. Takimiya and Y. Kunugi, Journal of the American Chemical Society 2007, 129, 11684-11685. [40] Y. Ie, K. Nishida, M. Karakawa, H. Tada and Y. Aso, The Journal of Organic Chemistry 2011, 76, 6604-6610. [41] J.-i. Nishida, H. Deno, S. Ichimura, T. Nakagawa and Y. Yamashita, Journal of Materials Chemistry 2012, 22, 4483-4490. [42] X. Zhao, Y. Wen, L. Ren, L. Ma, Y. Liu and X. Zhan, Journal of Polymer Science Part A: Polymer Chemistry 2012, 50, 4266-4271. [43] H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dotz, M. Kastler and A. Facchetti, Nature 2009, 457, 679-686. [44] M. L. Tang, A. D. Reichardt, N. Miyaki, R. M. Stoltenberg and Z. Bao, Journal of the American Chemical Society 2008, 130, 6064-6065. [45] C.-L. Song, C.-B. Ma, F. Yang, W.-J. Zeng, H.-L. Zhang and X. Gong, Organic Letters 2011, 13, 2880-2883. [46] A. R. Mohebbi, J. Yuen, J. Fan, C. Munoz, M. f. Wang, R. S. Shirazi, J. Seifter and F. Wudl, Advanced Materials 2011, 23, 4644-4648. [47] P. Sonar, T. R. B. Foong, S. P. Singh, Y. Li and A. Dodabalapur, Chemical Communications 2012, 48, 8383-8385. [48] L. Burgi, M. Turbiez, R. Pfeiffer, F. Bienewald, H.-J. Kirner and C. Winnewisser, Advanced Materials 2008, 20, 2217-2224. [49] H.-W. Lin, W.-Y. Lee and W.-C. Chen, Journal of Materials Chemistry 2012, 22, 2120-2128. [50] J. Fan, J. D. Yuen, M. Wang, J. Seifter, J.-H. Seo, A. R. Mohebbi, D. Zakhidov, A. Heeger and F. Wudl, Advanced Materials 2012, 24, 2186-2190. [51] E. D. Głowacki, L. Leonat, G. Voss, M.-A. Bodea, Z. Bozkurt, A. M. Ramil, M. Irimia-Vladu, S. Bauer and N. S. Sariciftci, AIP Advances 2011, 1, -. [52] M. Irimia-Vladu, E. D. Głowacki, P. A. Troshin, G. Schwabegger, L. Leonat, D. K. Susarova, O. Krystal, M. Ullah, Y. Kanbur, M. A. Bodea, V. F. Razumov, H. Sitter, S. Bauer and N. S. Sariciftci, Advanced Materials 2012, 24, 375-380. [53] W.-J. Zeng, X.-Y. Zhou, X.-J. Pan, C.-L. Song and H.-L. Zhang, AIP Advances 2013, 3, 012101-012101-012101-012106. [54] R. D. McCullough, R. D. Lowe, M. Jayaraman and D. L. Anderson, The Journal of Organic Chemistry 1993, 58, 904-912. [55] H. Yang, T. J. Shin, L. Yang, K. Cho, C. Y. Ryu and Z. Bao, Advanced Functional Materials 2005, 15, 671-676. [56] M. Estrada, I. Mejia, A. Cerdeira and B. Iniguez, Solid-State Electronics 2008, 52, 53-59. [57] Y. Fu, C. Lin and F.-Y. Tsai, Organic Electronics 2009, 10, 883-888. [58] C. K. Chan, L. J. Richter, B. Dinardo, C. Jaye, B. R. Conrad, H. W. Ro, D. S. Germack, D. A. Fischer, D. M. DeLongchamp and D. J. Gundlach, Applied Physics Letters 2010, 96, -. [59] J. W. Jeong, Y. D. Lee, Y. M. Kim, Y. W. Park, J. H. Choi, T. H. Park, C. D. Soo, S. M. Won, I. K. Han and B. K. Ju, Sensors and Actuators B: Chemical 2010, 146, 40-45. [60] E. Orgiu, A. M. Masillamani, J.-O. Vogel, E. Treossi, A. Kiersnowski, M. Kastler, W. Pisula, F. Dotz, V. Palermo and P. Samori, Chemical Communications 2012, 48, 1562-1564. [61] H. Tai, Y. Jiang, C. Duan, W. Dan and X. Li, Integrated Ferroelectrics 2013, 144, 15-21. [62] X. Li, Y. D. Jiang, H. L. Tai, G. Z. Xie and W. C. Dan, Advanced Materials Research 2014, 875, 82-86. [63] C.-H. Lee, C.-H. Hsu, I.-R. Chen, W.-J. Wu and C.-T. Lin, Advances in Materials Science and Engineering 2014, 878064, 1-10. [64] A. R. Mohebbi and F. Wudl, Chemistry – A European Journal 2011, 17, 2642-2646. [65] P. Rademacher, C. Heinemann, S. Jansch, K. Kowski and M. E. Weis, Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 2000, 56, 1179-1190. [66] J. E. Anthony, Chemical Reviews 2006, 106, 5028-5048. [67] M. Smet, J. Van Dijk and W. Dehaen, Synlett 1999, 1999, 495-497. [68] J. Zhang, J. K. Lee, Y. Wu and R. W. Murray, Nano Letters 2003, 3, 403-407. [69] P. Pitliya, Y. Sun, J. C. Garza, C. Liu, X. Gong, A. Karim and D. Raghavan, Polymer 2014, 55, 1769-1781. [70] P. Veerender, V. Saxena, A. K. Chauhan, S. P. Koiry, P. Jha, A. Gusain, S. Choudhury, D. K. Aswal and S. K. Gupta, Solar Energy Materials and Solar Cells 2014, 120, Part B, 526-535. [71] L. Qiu, W. H. Lee, X. Wang, J. S. Kim, J. A. Lim, D. Kwak, S. Lee and K. Cho, Advanced Materials 2009, 21, 1349-1353. [72] A. Rodrigues, M. C. R. Castro, A. S. F. Farinha, M. Oliveira, J. P. C. Tome, A. V. Machado, M. M. M. Raposo, L. Hilliou and G. Bernardo, Polymer Testing 2013, 32, 1192-1201. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55964 | - |
dc.description.abstract | 本文主要探討不同結構小分子,以不同比例摻雜入 P3HT,對載子遷移率 (mobility) 之影響。利用合成方式製備平面性結構雙噻吩駢環芳香烴化合物 emeraldicene (EMD),及具有 2-ethylhexyl (EH) 烷基鏈與溴 (Br) 取代基的衍生物 2EH-EMD 與 2Br-2EH-EMD 作為摻雜小分子。另一方面,合成非平面性芳香烴化合物 2Th-An 來與上述小分子比較對於 P3HT 高分子鏈的影響。此一系列小分子以不同比例與 P3HT 混摻製備薄膜,利用薄膜電晶體 (thin film transistor, TFT) 元件來觀察載子遷移率增減的變化。並使用紫外光-可見光光譜與螢光光譜了解不同小分子添加物以不同比例製作 P3HT 薄膜,對 P3HT 吸收與放光產生的影響。除此之外,以光學顯微鏡觀察這一系列薄膜細微結構的變化或結晶狀況,與載子遷移率的關係。以 2Th-An 為例,在低混摻比例時,光學顯微鏡的表面型態與純 P3HT 幾乎相同,但 25 % 的 2Th-An 摻混比例,結晶尺寸變大且均勻分散,50 % 的結晶尺寸更大且分布變得密集;2EH-EMD在各混摻比例沒有明顯變化,結晶分布均勻,且尺寸均大於 P3HT;EMD 與 2Br-2EH-EMD 皆有明顯的黑色顆粒,在 P3HT 中產生聚集。在有機薄膜電晶體部分,2EH-EMD 與 2Th-An 皆可測得電晶體特性,載子遷移率約為10-4 - 10-2 cm2V-1s-1,其中 2Th-An (25 %) 為所有材料中表現最佳,具有 3.6×10-2 cm2V-1s-1 的載子遷移率,開關電流比為 1.8,起始電壓為 -10.1 V。 | zh_TW |
dc.description.abstract | Several polycyclic heteroaromatic hydrocarbons with planar structures such as emeraldicene (EMD) and its derivatives 2EH-EMD, 2Br-2EH-EMD, and an aromatic compound with non-planar structure such as 2Th-An were synthesized and characterized. These four compounds were respectively used as additives to blend into P3HT with different weight ratios (1 wt%, 2 wt%, 5 wt%, 25 wt%, and 50 wt%) for organic thin film transistors (OTFTs). After spin-coating the thin films, we used the solvent treatment to enhance the ordered packing of the polymer chains. Photophysical properties were determined by UV-visible spectroscopy and photoluminescence. There were no changes on the absorption peak and the emission peak of P3HT after blending the small molecules into it. OM results indicate that for P3HT/ 2Th-An (25 wt%), P3HT/ 2Th-An (50 wt%) and all of P3HT/ 2EH-EMD samples, the domain sizes were larger than that in P3HT. For the P3HT/ EMD and P3HT/ 2Br-2EH-EMD samples, the aggregation of small molecules was observed. A series of organic thin film transistors based on the respective blends of P3HT and small molecules were fabricated. Electrical properties could be measured only for the P3HT/ 2EH-EMD and P3HT/ 2Th-An samples. The ranges of mobilities were about 10-4 to 10-2 cm2V-1s-1. The highest mobility (3.6×10-2 cm2V-1s-1), on/off ratio (1.8), and threshold voltage (-10.1 V) were observed for the P3HT/ 2Th-An (25 wt%) based organic thin film transistor. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T05:11:49Z (GMT). No. of bitstreams: 1 ntu-103-R01549015-1.pdf: 5320730 bytes, checksum: 6efdcd58fce8669110d09075c9c27f00 (MD5) Previous issue date: 2014 | en |
dc.description.tableofcontents | 口試委員審定書 i
誌謝 ii 中文摘要 iii Abstract iv 目錄 v 圖目錄 viii 表目錄 xi 第一章 緒論 1 1.1 前言 1 1.2 有機薄膜電晶體之簡介 2 1.3 有機薄膜電晶體之元件結構 4 1.4 有機薄膜電晶體之操作原理 6 1.5 有機薄膜電晶體之重要參數 8 1.5.1 載子遷移率 (Mobility, μ) 8 1.5.2 起始電壓 (Threshold Voltage, Vt) 10 1.5.3 開關電流比 (On/Off Current Ratio, ION/IOFF) 10 1.6 有機薄膜電晶體之半導體層材料 11 第二章 文獻回顧與研究動機 18 2.1 廣泛研究之聚 (3-己烷基噻吩) (P3HT) 18 2.1.1 P3HT 於有機薄膜電晶體之應用 18 2.1.2 使用添加劑對 P3HT 有機薄膜電晶體之影響 22 2.2 祖母綠雙噻吩駢環芳香烴化合物 (EMD) 之介紹 23 2.3 研究動機 25 第三章 實驗與合成 26 3.1 藥品與溶劑 26 3.2 儀器介紹 28 3.3 實驗流程 31 3.4 有機小分子之合成步驟 32 3.4.1 單體Compound 1: 1, 5-Dichloro-9, 10-di(thiophen-2-yl)-9, 10-dihydroanthracene-9, 10-diol 之合成 33 3.4.2 單體Compound 2: 2,2'-(1,5-Dichloroanthracene-9,10-diyl)dithiophene 之合成 34 3.4.3 化合物 Emeraldicene (EMD) 之合成 35 3.4.4 單體Compound 3: 3-(2-Ethylhexyl) thiophene之合成 36 3.4.5 單體 Compound 4: 1, 5-Dichloro-9, 10-bis(4-(2-ethylhexyl ) thiophen-2-yl)-9, 10-dihydroanthracene-9, 10-diol 之合成 37 3.4.6 單體Compound 5: 1, 5-Dichloro–9, 10-bis(thien-2-yl)anthracene 之合成 38 3.4.7 化合物 4-(2-Ethylhexyl)emeraldicene (2EH-EMD) 之合成 39 3.4.8 化合物 Dibromo-4-(2-ethylhexyl)emeraldicene (2Br-2EH-EMD) 之合成 40 3.4.9 單體Compound 6: 9, 10-Di(thiophen-2-yl)-9, 10-dihydroanthracene-9, 10-diol之合成 41 3.4.10 化合物 9,10-Di(thiophen-2-yl)anthracene(2Th-An) 之合成 42 3.5 有機薄膜電晶體元件製備 43 第四章 結果與討論 44 4.1 有機小分子基本性質 44 4.1.1 結構基本鑑定 44 4.1.2 熱性質 48 4.2 光學特性 51 4.2.1 紫外光–可見光光譜 (UV-vis) 51 4.2.2 螢光光譜儀 (PL) 55 4.3 有機半導體層型態分析 58 4.3.1 光學顯微鏡 (OM) 58 4.4 有機薄膜電晶體之電性質 63 第五章 結論 74 第六章 參考資料 75 附錄 81 | |
dc.language.iso | zh-TW | |
dc.title | 聚(3-己烷基噻吩)摻雜祖母綠雙噻吩駢環芳香烴化合物薄膜性質與電性探討 | zh_TW |
dc.title | Thin Films based on P3HT and Emeraldicene Derivatives for Electronic Devices | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 蘇文?,林慶炫,李榮和,劉英麟 | |
dc.subject.keyword | 祖母綠雙?吩駢環芳香烴,聚(3-己烷基?吩),有機薄膜電晶體, | zh_TW |
dc.subject.keyword | emeraldicene,poly(3-hexylthiophene) (P3HT),organic thin film transistor (OTFT), | en |
dc.relation.page | 87 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2014-08-19 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 高分子科學與工程學研究所 | zh_TW |
顯示於系所單位: | 高分子科學與工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-103-1.pdf 目前未授權公開取用 | 5.2 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。