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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 馮哲川(Zhe-Chuan Feng) | |
dc.contributor.author | Bo-Wei Wang | en |
dc.contributor.author | 汪柏維 | zh_TW |
dc.date.accessioned | 2021-06-16T05:11:04Z | - |
dc.date.available | 2014-08-25 | |
dc.date.copyright | 2014-08-25 | |
dc.date.issued | 2014 | |
dc.date.submitted | 2014-08-18 | |
dc.identifier.citation | [1]J. A. Coaquira, J. F. Teixeira, S. W. da Silva, P. C. Morais, A. Fotkatzikis and A. Freundlich “Effects of high-temperature annealing on the optical phonons and nitrogen local vibrational modes in GaAs_(1-x) N_x epilayers,” Appl. Phys. Lett. 93, 252105, 2008.
[2]P. R. C. Kent and Alex Zunger “Theory of electronic structure evolution in GaAsN and GaPN alloys,” Phys. Rev. B 64, 115208, 2001. [3]T. Ahlgrena, E. Vainonen-Ahlgrenb, J. Likonen, W. Li and M. Pessa “Concentration of interstitial and substitutional nitrogen in GaNAs,” Appl. Phys. Lett. 80, 13, 2002. [4]E. Nodwell, M. Adamcyk, A. Ballestad, T. Tiedje, S. Tixier, S. E. Webster, E. C. Young, A. Moewes, E. Z. Kurmaev, and T. van Buuren “Tight-binding model for the x-ray absorption and emission spectra of dilute GaNAs at the nitrogen K edge,” Phys. Rev. B 69, 155210, 2004. [5]S. B. Zhang and S. H. Wei “Nitrogen solubility and induced defect complexes in epitaxial GaAs:N,” Phys. Rev. Lett. 86, 1789, 2001. [6]A. Polimeni , Bissiri, M. Felici, M. Capizzi, M. Buyanova, I. Chen, W. M. Xin, H. P. and Tu, C. W. “Nitrogen passivation induced by atomic hydrogen: the GaPN case,” Phys. Rev. B 67, 201303, 2003. [7]A. Bonapasta, A. Filippone, F. & Giannozzi, P. “Structure, electronic properties and formation mechanisms of hydrogen nitrogen complexes in GaPN alloys,” Phys. Rev. B 69, 115-207, 2004. [8]M. Weyers, M. Sato, and H. Ando, “Red shift of photoluminescence and absorption in dilute GaAsN alloy layers,” J. J. Appl. Phys. 31, 853-855, 1992. [9]L. Bellaiche and A. Zunger, “Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys,” Phys. Rev. B 57, 4425, 1998. [10]A. Jenichen, C. Engler, G. Leibiger, and V. Gottschalch, “Stability and band gaps of As-rich and N-rich GaAsN alloys: Density-functional supercell calculatons,” Phys. Status Solidi B 242, 2820, 2005. [11]M. Kondow, T. Kitatani, S. Nakatsuka, Michael C. Larson, K. Nakahara, Y. Yazawa, M. Okai, Member, IEEE, and K. Uo mi, “GaInNAs: a novel material for long-wavelength semiconductor lasers, ” IEEE J. of Selected Topics in Quantum Electronics 3, 719-730, 1997. [12]S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons, “InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs,” Appl. Phys. Lett. 74, 729-731, 1999. [13]D. J. Friedman, J. F. Geisz, S. R. Kurtz, J. M. Olson, “1-eV solar cells with GaInNAs active layer,” Journal of Crystal Growth 195, 409-415, 1998. [14]D. Gollub, S. Moses, M. Fischer and A. Forchel, “1.42 pm continuous-wave operation of GalnNAs laser diodes,” Electron. Lett. 39, 777-778, 2003. [15]K. Nakahara, M. Kondow, T. Kitatani, M. C. Larson, and K. Uomi, “1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers,” IEEE Photon. Technol. Lett. 10, 487-488, 1998. [16]V. Lordi, V. Gambin, S. Friedrich, T. Funk, T. Takizawa, K. Uno, and J. S. Harris “Nearest-Neighbor Configuration in (GaIn)(NAs) Probed by X-Ray Absorption Spectroscopy,” Phys. Rev. Lett. 90, 145505, 2003. [17]P. J. Klar, H. Gruning, J. Koch, S. Schafer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, and E. P. O’Reilly, “(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen, ” Phys. Rev. B 64, 121203 2001. [18]S. Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, and N. Karam, “Structural changes during annealing of GaInAsN,” Appl. Phys. Lett. 78, 748-750, 2001. [19]E. M. Pavelescu, J. Wagner, H. P. Komsa, T. T. Rantala, M. Dumitrescu, and M. Pessa, “Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effect of growth temperature and thermal annealing,” J. Appl. Phys. 98, 083524, 2005. [20]G. Ciatto, F. D’Acapito, L. Grenouillet, H. Mariette, D. De Salvador, G. Bisognin, R. Carboni, L. Floreano, R. Gotter, S. Mobilio, and F. Boscherini, “Quantitative determination of short-range ordering in InGaAsN,” Phys. Rev. B 68, 161201(R), 2003. [21]J. A. Gupta, M. W. C. Dharma-wardanaa, A. Jurgensenb, E. D. Crozierc, J. J. Rehrd, M. Pranged, “Local environment of nitrogen in GaNAs epilayers on GaAs (0 0 1) studied using X-ray absorption near edge spectroscopy,” Solid State Communications 136, 351–355, 2005. [22]S. Bharatan, S. Iyer, K. Nunna, W. J. Collis, K. Matney, J. Reppert, A. M. Rao, and P. R. C. Kent, “The effects of annealing on the structural, optical, and vibrational properties of lattice matched GaAsSbN/GaAs grown by molecular beam epitaxy,” J. Appl. Phys. 102, 023503, 2007. [23]L.F. Biana, D.S. Jianga, P.H. Tana, S.L. Lua, B.Q. Suna, L.H. Lib, J.C. Harmandb, “Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates,” Solid State Communications 132, 707–711, 2004. [24]C. Ciatto, J. C. Harmand, F. Glas, L. Largeau, M. Le Du, F. Boscherini, M. Malvestuto, L. Floreano, P. Glatzel, R. Alonso Mori, “Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations,” Phys. Rev. B 75, 245212, 2007. [25]Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, 'Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN, ' Appl. Phys. Lett. 96, 011903, 2010. [26]R. M. Martin, “Elastic Properties of ZnS Structure Semiconductors,” Phys. Rev. B, 1, 4005-4011, 1970. [27]M. I. Alonso and K. Winer, “Raman spectra of c-Si_(1-x) Ge_x alloys,” Phys. Rev. B 39, 10056-10062, 1989. [28]J. J. Rehr, A. Ankudinov, B. Ravel, and K. Jorissen, “The FEFF User’s guide” feff version 9.03 updated September 5, 2009. [29]W. Li, M. Pessa and J. Likonen, “Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law,” Appl. Phys. Lett. 78, 2864, 2001. [30]Y. C. Pana, S. F. Wanga, W. H. Leea, W. C. Lina, C. I. Chiangb, H. Changb, H. H. Hsiehc, J. M. Chend, D. S. Line, M. C. Leea, W. K. Chena, W. H. Chena, “Structure study of GaN:Mg films by X-ray absorption near-edge structure spectroscopy,” Solid State Communications, 117, 577-582, 2001. [31]A. L. Ankudinov, B. Ravel, J. J. Rehr, and S. D. Conradson, “Real-space multiple-scattering calculation and interpretation of x-ray-absorption near-edge structure,” Phys. Rev. B 58, 7565, 1998. [32]B. Ravel and M. Newville, “ATHENA, ARTEMIS, HEPHAESTUS: data analysis for X-ray absorption spectroscopy using IFEFFIT,” J. Synchro. Rad. 12, 537-541, 2005. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55931 | - |
dc.description.abstract | 本論文的研究主題為低含氮化合物半導體銻氮砷化鎵(GaAsSbN)在熱退火前後N原子的短距離結構變化。我們利用VFF(Valence force field) model建立1000顆原子大小超晶格,建立不同的N原子短距離結構模型,透過FEFF9軟體進行模擬可以得到不同結構下的吸收頻譜。經由N K-edge量測結果與FEFF9頻譜模擬進行XANES(X-ray absorption near edge structure)比對可以推測N原子短距離結構,Sb K-edge量測分析EXAFS(extended X-ray absorption fine structure) Ga-Sb平均鍵長並配合VFF model分析可以加以驗證結果。
綜合XANES、EXAFS結果我們發現在GaAsSbN as grown的樣品中,N原子的短距離結構主要是以沿著[0 0 1]方向形成NN1 pair,並有4顆Sb原子聚集在此NN1 pair的共同第二層,我們稱為NN1+Sb4 model。在熱退火800℃後,部份NN1 pair分解成isolated N的型式,且有2顆Sb原子聚集在isolated N的第二層,因此同時存在NN1+Sb4 model以及isolated N+Sb2 model兩種模型。而在熱退火850℃後,NN1+Sb4 model幾乎全部分解成isolated N+Sb2 model,N原子的短距離結構主要是以isolated N+Sb2 model為主。 | zh_TW |
dc.description.abstract | This study is about the changes of the short-range configuration of N atoms in dilute nitride GaAsSbN after thermal annealing. We use valence force field model to construct 1000 atoms supercells with different N-centered short-range structure. Then we used FEFF9 program to calculate their XANES(X-ray absorption near edge structure) spectra. The XANES of N K-edge experiment result is compared with the simulations from FEFF9 to realize the short-range structure of N atoms, and the Sb K-edge EXAFS(extended X-ray absorption fine structure) fitting results of average GaSb bond length are compared to the VFF calculation to confirm the results.
After comparing the results of XANES and EXAFS, we find there exist NN1 pairs along [0 0 1] direction with four Sb atoms clustering in their commom second shell, called NN1+Sb4 model. After thermal annealing at 800℃, some part of the NN1 pairs dissociate into isolated N with two Sb atoms clustering in the second shell. After 850℃ annealing, however, the short-range structure of N atoms is the isolated N+Sb2 model. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T05:11:04Z (GMT). No. of bitstreams: 1 ntu-103-R01941093-1.pdf: 3765709 bytes, checksum: da45db59e03b08cf71c19690e5a433f5 (MD5) Previous issue date: 2014 | en |
dc.description.tableofcontents | 中文摘要………………………………………………………………I
Abstract…………………………………………………………II 目錄…………………………………………………………………III 附表索引……………………………………………………………VI 附圖索引……………………………………………………………VII 第一章 序論 1.1 含氮的半導體材料特性……………………………………………1 1.2 短距離結構 (short-range structure)………………………………1 1.2.1 短距離結構對dilute nitride的影響………………………………1 1.2.2 目前短距離結構研究狀況…………………………………………2 1.3 論文架構……………………………………………………………4 第二章 實驗原理與架構 2.1 實驗步驟…………………………………………………………7 2.2 同步輻射………………………………………………………………………8 2.2.1 同步輻射光源……………………………………………………8 2.2.2 Beamline 01C (BL01C)……………………………………………9 2.2.3 Beamline 20A (BL20A)……………………………………………10 2.3 X光吸收光譜………………………………………………………12 2.3.1 XAFS (X-ray absorption fine structure)…………………………… 12 2.3.2 XAFS實驗步驟…………………………………………………14 2.4價力場模型 (VFF model, valence force field model)……………18 2.4.1 VFF model介紹…………………………………………………18 2.4.2 VFF實驗步驟……………………………………………………19 2.5 FEFF9 program……………………………………………………22 2.5.1 FEFF9 program介紹……………………………………………22 2.5.2 FEFF9 program 實驗步驟………………………………………23 第三章 實驗結果與討論 3.1 VFF model結果分析討論…………………………………………31 3.1.1 氮原子在砷化鎵超晶格中的影響範圍……………………………31 3.1.2不同顆數Sb原子聚集在isolated N及NN1 pair周圍的影響…………31 3.2 RSM 結果分析討論………………………………………………35 3.3 FEFF9 基礎模擬結果分析………………………………………36 3.3.1 GaN 模擬結果分析……………………………………………36 3.3.2 GaAsSbN 模擬結果分析…………………………………………38 3.4 C2065GaAs0.91Sb0.07N0.02系列 XANES模擬結果……………40 3.4.1 GaAsSbN as grown 模擬結果分析………………………………40 3.4.2 GaAsSbN RTA800℃ 模擬結果分析…………………………………44 3.4.3 GaAsSbN RTA850℃ 模擬結果分析………………………………45 3.5 C2065 GaAs0.91Sb0.07N0.02系列 EXAFS分析結果…………47 第四章 結論…………………………………………………………82 第五章 參考文獻…………………………………………………83 | |
dc.language.iso | zh-TW | |
dc.title | 以X光吸收光譜研究銻氮砷化鎵材料短距離結構變化 | zh_TW |
dc.title | Short-range structure of dilute nitride GaAsSbN studied by X-ray absorption spectroscopy | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 林浩雄(Hao-Hsiung Lin) | |
dc.contributor.oralexamcommittee | 鄭舜仁(Shun-Jen Cheng),吳志宏,王智祥 | |
dc.subject.keyword | 短距離結構,XANES,EXAFS,VFF,FEFF9, | zh_TW |
dc.subject.keyword | short-range structure,XANES,EXAFS,VFF,FEFF9, | en |
dc.relation.page | 87 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2014-08-19 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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