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標題: | 探討奈米尺度銦元素波動對氮化銦鎵/氮化鎵多層量子井發光二極體的光學及電學特性的影響 Study the influence of nanoscale indium fluctuation to the optical and electrical properties of InGaN/GaN multiple quantum well LED |
作者: | Tsung-Jui Yang 楊宗叡 |
指導教授: | 吳育任(Yuh-Renn Wu) |
關鍵字: | 發光二極體,量子井,氮化銦鎵,氮化鎵,銦元素波動, Light emitting diode,Quantum well,InGaN,GaN,Indium fluctuation, |
出版年 : | 2014 |
學位: | 碩士 |
摘要: | 在固態照明領域中,氮化銦鎵量子井發光二極體是一個非常熱門的技術。由於氮化銦和氮化鎵之間強烈的晶格失配,在長晶過程中自發形成的銦元素波動對二極體的光學及電學特性都有重大的影響在這篇文章中,我們報告了奈米尺度銦元素波動對發光二極體的發光頻譜以及載子傳輸的影響。在模擬中,我們使用自己開發的亂數產生器產生銦元素波動,並且和電子顯微鏡探針術所量測到的銦元素波動具有相似之處。結果顯示考慮了銦元素波動的模擬結果有較寬的發光頻譜,原因來自於這個現象具有較大範圍的發光本徵能量。此外,我們的模擬對於元件有更好的預測效果。主要是來自於銦元素波動強烈的影響了載子在元件內的傳輸特性。因此,我們的模擬結果諸如I-V曲線、IQE曲線和實驗具有較高的穩和度。發光二極體效率驟降至今仍然是極具爭議性的,基於我們較準確模擬結果,我們利用銦元素波動的模型解釋了效率驟降產生的原因。最後,我們認為如果銦元素波動的幅度是可以被控制的,也許在未來可以利用這樣的概念來達到優化元件的目的。 InGaN quantum well LED has become a popular technology in solid lighting state. Due to the strong lattice mismatch between InN and GaN layers, the self-formed random indium uctuation has played an important role in influencing the LED s electrical and optical properties. In this paper, we report on the influence of nanoscale indium fluctuation to the emission spectrum and carrier transport in LED. In our simulation, we use our random generator to generate the indium fluctuation, which can show some similarities to the experiment data from Atom Probe Tomography (APT). The results show that when including the indium fluctuation, the emission spectrum will broaden because of the wider range of emission energy. On the other hand, our indium fluctuation model is much better in predicting the device. The main reason is that the indium fluctuation strongly affects the carrier transport in the device. Therefore, the I-V curve and IQE curve are much more matching to the experiment data. Based on our simulation result, we explain the cause of the droop effect, which is still debatable nowadays. Finally, we consider that if the level of indium fluctuation can be controlled, it is possible to optimize the device in the future. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55736 |
全文授權: | 有償授權 |
顯示於系所單位: | 光電工程學研究所 |
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