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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55711完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 溫政彥(Cheng-Yen Wen) | |
| dc.contributor.author | Ren-Jie Chang | en |
| dc.contributor.author | 張仁頡 | zh_TW |
| dc.date.accessioned | 2021-06-16T04:18:53Z | - |
| dc.date.available | 2017-08-25 | |
| dc.date.copyright | 2014-08-25 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-08-19 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55711 | - |
| dc.description.abstract | 石墨烯為一由含有sp2鍵結的碳原子所構成之六角碳環組成的二維平面材料，由於其優異的電子性質以及機械性質，使得石墨烯在近年來引起許多學者們的注意，並且紛紛投入其研究。為了於未來將石墨烯應用於各式各樣的電子元件上，具備穩定且能生產出高品質石墨烯的製備方法是非常關鍵的因素，而在眾多製備石墨烯的方法當中，利用化學氣相沉積法進行石墨稀成長，相較於其他製備方法有著許多優點，它包含了製程簡單以及可以控制石墨烯薄膜的層數，除此之外最重要的是化學氣相沉積法能將其製程規模放大，有利於業界進行大面積的生產，以達商業化之目標，然而利用化學氣相沉積法所製備的石墨烯薄膜，其品質至今仍遠不及機械剝離法，主要原因在於利用化學氣相沉積法成長石墨烯薄膜時，在石墨烯薄膜的晶界處含有大量缺陷，導致其薄膜的載子遷移率降低，連帶影響了石墨烯電子元件的效率。因此若要有效地減少這些晶界在石墨烯薄膜的分布，則必須先減少石墨烯在成長初期的成核密度，以降低在石墨烯薄膜中的缺陷密度，使利用石墨烯所製備的元件之效率得以提升。在本論文中，我們探討了化學氣相沉積製程中的反應氣氛對石墨烯薄膜成長的影響，並且在進行石墨烯成長之前，先將金屬銅基板置於氧氣氣氛下，使其表面產生穩定的氧化層，而能有效地鈍化銅金屬表面的成核點，使石墨烯在成長初期階段的成核密度可以從104 nuclei/mm2降低至3 nuclei/mm2，石墨烯的晶域大小也因此得以從十微米提升至釐米等級；而經由石墨烯電晶體的電子性質量測，也驗證了石墨烯晶域大小的增加，可以降低含有缺陷結構的晶界分布，提升了石墨烯薄膜的品質，其載子遷移率可以從1500 cm2/V s 上升至3270 cm2/V s；而當選用具有高化學活性的乙炔氣體為碳源進行石墨烯薄膜成長時，其成長溫度可以從1000℃大幅地降低至750℃，使得其石墨烯成長較能相容於現今的半導體製程技術。 | zh_TW |
| dc.description.abstract | Graphene, a two-dimensional hexagonal lattice structure composed of sp2-bonded carbon atoms, has drawn significant attention for its exceptional electrical and mechanical properties. In order to apply graphene in electronic devices, reliable fabrication methods, which can produce high-quality graphene layers, are very essential. Among the approaches to synthesize graphene, the chemical vapor deposition (CVD) method shows several advantages, including simple fabrication procedures, easy control of graphene layer numbers, and, most importantly, its scalability – it has been demonstrated that the size of graphene sheet is large enough for industrial applications. However, the quality of CVD-grown graphene is not comparable with those exfoliated from graphite flakes; the defects, such as the domain boundaries, degrade the carrier mobility in graphene. Therefore, reducing the amount of domain boundaries by means of reducing the nucleation density in the initial stage of graphene growth will be beneficial for improving the electrical properties of graphene-based devices. In this study, we investigate the effects of the reaction gases in CVD graphene growth on the nucleation density. We find that the presence of oxygen prior to graphene growth leads to the formation of copper oxide layers on Cu substrate that passivate the active sites for nucleation, greatly reducing the nucleation density from 104 to 3 nuclei/mm2. Due to the passivation, the graphene domain size increases from 10 μm to 1 mm; the carrier mobility of graphene field effect transistor is increased from 1500 cm2/V s to 3270 cm2/V s, therefore improving the quality of graphene films. When high-reactivity acetylene is used as the carbon source, the growth temperature can be dramatically reduced from 1000℃ to 750℃, making the CVD growth more compatible with the existing semiconductor fabrication processes. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T04:18:53Z (GMT). No. of bitstreams: 1 ntu-103-R01527046-1.pdf: 10108290 bytes, checksum: c050aebff91fddeab625dd277a7df5ea (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii LIST OF TABLES xix Chapter 1 概述與動機 1 Chapter 2 石墨烯的基礎物性 3 2.1 石墨烯的晶體結構 4 2.2 石墨烯的電子性質 6 2.3 石墨烯的化學性質 11 2.4 石墨烯的機械性質 12 Chapter 3 石墨烯的製備方法 15 3.1 機械剝離法 15 3.2 化學溶液法 17 3.3 磊晶成長法 19 3.4 化學氣相沉積法 20 3.4.1 基板效應與成長機制 21 3.4.2 石墨烯薄膜晶域大小提升 30 3.4.3 碳源效應 35 3.4.4 石墨烯轉印 39 Chapter 4 實驗步驟與研究方法 47 4.1 實驗方法 47 4.1.1 基板前處理 47 4.1.2 化學氣相沉積製程 48 4.1.3 氧化層輔助化學氣相沉積製程 49 4.1.4 成長基板氧化 50 4.1.5 石墨烯轉印 51 4.1.6 石墨烯電子元件製作 52 4.2 薄膜分析與鑑定 52 4.2.1 光學顯微鏡 53 4.2.2 拉曼光譜儀 55 4.2.3 原子力顯微鏡 57 4.2.4 掃描式電子顯微鏡 58 4.2.5 背向式散射電子繞射 59 Chapter 5 化學氣相沉積法於石墨烯薄膜製備之探討 61 5.1 碳源效應與成長時間效應 61 5.2 氫氣效應 63 5.3 溫度效應 68 Chapter 6 氧化層輔助化學氣相沉積法於石墨烯薄膜製備之探討 75 6.1 銅箔基板表面氧化層穩定度測試 75 6.2 氧化層輔助化學氣相沉積法成長石墨烯薄膜 77 6.2.1 碳源氣體的選擇 77 6.2.2 CVD與OCVD製程比較 78 6.2.3 CVD與OCVD製程成長初期之成核機制 81 6.2.4 銅箔表面氧化層效應之驗證 82 6.3 反應氣流效應 84 6.3.1 銅箔基板頂部與底部表面的成長行為差異 84 6.3.2 銅箔基板表面的氣體流動行為及質量傳輸現象 85 6.4 石墨烯薄膜adlayer成長 88 6.4.1 石墨烯薄膜adlayer形成機制 88 6.4.2 銅箔基板前處理的改善 90 6.5 石墨烯場效電晶體電性量測 94 6.6 基板晶面對石墨烯島嶼形貌之影響 97 Chapter 7 結論與未來展望 103 REFERENCE 104 | |
| dc.language.iso | zh-TW | |
| dc.subject | 化學氣相沉積 | zh_TW |
| dc.subject | 基板表面氧化層 | zh_TW |
| dc.subject | 成核密度 | zh_TW |
| dc.subject | 晶域大小 | zh_TW |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | chemical vapor deposition | en |
| dc.subject | graphene | en |
| dc.subject | domain size | en |
| dc.subject | surface oxide layer of substrate | en |
| dc.subject | nucleation density | en |
| dc.title | 反應氣氛對化學氣相沉積法於銅基板上成長石墨烯之影響 | zh_TW |
| dc.title | Influence of the Reaction Gases on Graphene Growth on Copper Substrates by Chemical Vapor Deposition | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳俊維(Chun-Wei Chen),林招松(Chao-Sung Lin) | |
| dc.subject.keyword | 石墨烯,化學氣相沉積,成核密度,基板表面氧化層,晶域大小, | zh_TW |
| dc.subject.keyword | graphene,chemical vapor deposition,nucleation density,surface oxide layer of substrate,domain size, | en |
| dc.relation.page | 113 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2014-08-20 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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