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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張顏暉(Yuan-Huei Chang) | |
dc.contributor.author | Jen-Kai Wu | en |
dc.contributor.author | 吳仁凱 | zh_TW |
dc.date.accessioned | 2021-06-16T04:08:52Z | - |
dc.date.available | 2022-07-29 | |
dc.date.copyright | 2020-08-04 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-07-30 | |
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T.; Ullah, F.; Tahir, Z.; Kim, Y. S.; Trung, D. Q.; Nguyen, T.; Bui, H. V.; Das, R.; Huy, P. T.; Cho, S., High Thermoelectric Power Factor in SnSe2 Thin Film Grown on Al2O3 Substrate. Materials Research Express 2019, 6 (6), 066420. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55550 | - |
dc.description.abstract | 數十年來,對環保和不斷增長的發電需求推動了熱電材料的發展。二維材料的最新發現像是提高聲子散射和增強結晶度,為這一活躍的研究領域提供了新的動力。二維熱電元件與塊材熱電元件相比已顯示出較強的性能,但由於在有限的尺寸下聲子邊界散射變得無效,因此無法通過奈米結構輕易地進行改進。 為了克服此問題,我們引入了一種一維紋理化方法,可有效抑制二維熱電晶粒之間的聲子傳輸。利用高度定向的單軸石墨烯皺紋分離高品質的硒化物薄膜。這些紋理化樣品的熱電特性表現出很強的各向異性,室溫下的最大熱電優值分別為1.03 (硒化鉍)、0.372 (二硒化錫)和1.02 (硒化銅),這是目前為止此三種材料得到的最高報導值。另外,二硒化錫/石墨烯在微小應變下(小於0.2 %),因應變感應致電荷轉移而顯示出良好的電阻響應且應變計因數約為50,這表明它在小應變下可以是良好的應變傳感器。 引入紋理化方法為將來的應用提供了增強二維熱電元件的途徑,並且適用於任何二維熱電元件。 | zh_TW |
dc.description.abstract | The ever increasing demand for environmentally friendly and ubiquitous power generation has driven the development of thermoelectric materials for decades. The recent discovery of Two-dimensional (2D) materials, like enhanced crystallinity and increased phonon scattering, has provided new impulses to this active research field. 2D thermoelectrics have shown enhanced performance compared to bulk thermoelectrics but cannot easily be improved through nanostructuring since phonon-boundary scattering becomes ineffective under confined dimensions. To overcome this issue, we introduce a one-dimensional (1D) texturing approach that efficiently suppresses phonon transport between grains of 2D thermoelectrics. Uniaxial graphene wrinkles were utilized to separate high-quality, ultrathin selenides films in a highly directional manner. The thermoelectric properties of these textured samples exhibit a strongly anisotropic characteristic with a maximum ZT of 1.03 (Bi2Se3), 0.372 (SnSe2), and 1.02 (CuSe) at room temperature, which represents the highest reported value for the materials, respectively. Surprisingly, SnSe2/graphene shows good resistance response (gauge factor~ 50) which suggests it can be a good strain sensor. The texturing approach provides a route for the enhancement of 2D thermoelectrics for future applications and is applicable to any 2D thermoelectrics. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T04:08:52Z (GMT). No. of bitstreams: 1 U0001-2907202018483100.pdf: 4656002 bytes, checksum: 031d687a1f96fe1f8031563a31239d55 (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | Chapter 1 Introduction 1 1.1 Thermoelectric effect 1 1.1.1 Seebeck effect 1 1.1.2 Peltier effect 1 1.1.3 Thomson effect 1 1.2 The figure of merit, ZT 3 1.3 Motivation 3 Chapter 2 Experimental and apparatus 5 2.1 Experimental 5 2.1.1 The procedures of growing graphene on the copper foil ………………………………………………………….5 2.1.2 Transferring graphene on SiO2/Si (Gr/SiO2/Si) substrate. 6 2.1.3 Growing Bi2Se3 on graphene/SiO2/Si substrate by a PVD method 6 2.1.4 Growing SnSe2 on Gr/SiO2/Si substrate by a CVD method 6 2.1.5 Growing CuSe underneath Gr/Cu foil substrate by a CVD method 7 2.2 Apparatus 9 2.2.1 Atomic Force Microscope (AFM) 9 2.2.2 Scanning Electron Microscopy (SEM) 10 2.2.3 Transmission electron microscopy (TEM) 12 2.2.4 X-ray Diffraction (XRD) 13 2.2.5 Raman Spectrum 14 2.2.6 Time-domain thermoreflectance (TDTR) 14 Chapter 3 Thermoelectric properties of Bi2Se3 on graphene 17 3.1 The morphology and structure of Bi2Se3 on graphene (BSG) 17 3.2 Stoichiometric composition of Bi2Se3 on graphene 25 3.3 Thermoelectric properties of Bi2Se3 and BSG 28 Chapter 4 Thermoelectric properties of graphene/CuSe 35 4.1 The morphology and structure of CuSe underneath graphene 35 4.2 Stoichiometric composition of CuSe underneath graphene ……………………………………………………………….41 4.3 Thermoelectric properties of CuSe underneath graphene 43 Chapter 5 Thermoelectric properties of SnSe2/graphene 45 5.1 The morphology and structure of SnSe2 on graphene 45 5.2 Stoichiometric composition of SnSe2 on graphene 51 5.3 Thermoelectric properties of SnSe2 on graphene 53 Chapter 6 Strain effect on 2D graphene-selenides 55 Chapter 7 Conclusions 64 References 65 | |
dc.language.iso | en | |
dc.title | 異質接面二維石墨烯-硒化物之熱電性質
| zh_TW |
dc.title | Thermoelectric Properties of 2D Graphene-Selenides Heterojunction | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-2 | |
dc.description.degree | 博士 | |
dc.contributor.author-orcid | 0000-0002-6393-3786 | |
dc.contributor.coadvisor | 謝雅萍(Ya-Ping Hsieh) | |
dc.contributor.oralexamcommittee | 謝馬利歐(Mario Hofmann),陳永芳(Yang-Fang Chen),張之威(Chih-Wei Chang),謝文斌(Wen-Pin Hsieh) | |
dc.subject.keyword | 二維材料,熱電,石墨烯,硒化物, | zh_TW |
dc.subject.keyword | two dimensional,thermoelectrics,graphene,selenides, | en |
dc.relation.page | 69 | |
dc.identifier.doi | 10.6342/NTU202002053 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2020-07-30 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理學研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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