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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 王暉(Huei Wang) | |
dc.contributor.author | Yen-Ting Lin | en |
dc.contributor.author | 林彥廷 | zh_TW |
dc.date.accessioned | 2021-06-16T04:01:21Z | - |
dc.date.available | 2025-07-30 | |
dc.date.copyright | 2020-08-03 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-07-30 | |
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Brazil, “A simplified broadband design methodology for linearized high-efficiency continuous class-F power amplifiers,” IEEE Trans. Microw. Theory Techn., vol. 60, no. 6, pp. 1952–1963, Jun. 2012. [40] S. Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA, USA: Artech House, 2006. [41] J. C. Tinoco, A. G. Martinez-Lopez, M. Emam, and J.-P. Raskin “New RF intrinsic parameters extraction procedure for advanced MOS transistors,” IEEE International Conference on Microelectronic Test Structures, Mar. 2010. [42] Yen-Chin Chen, “Design of the broadband LNA and Ka-band PA,” Master thesis, National Taiwan University, Jan. 2018. [43] W.-C. Huang, “Design of differential LNA for radio astronomy receiver and high-efficiency K-band CMOS-based power amplifier with inductance-based neutralization for 5G communication,” Master thesis, National Taiwan University, Oct. 2018. [44] B.-Z. Lu, “Research of amplifier for astronomical receiver and power amplifier for 5G mobile communications,” Master dissertation, National Taiwan University, Jan. 2020. [45] Simon Haykin, Michael Moher, Communication systems. [46] Y.-T. Lin, et al., “A 38 GHz pre-distortion power amplifier with OP1dB and IM3 improvement in 65-nm CMOS process,” IEEE Asia Pacific Microwave Conference, Singapore, Dec. 2019. [47] Y.-T. Lin, et al., “A 27-GHz continuous class-F power amplifier with AM-PM compensation in 65-nm CMOS process,” submitted to 2020 IEEE Radio Frequency Integration Technology, Japan. Sep. 2020. [48] Yazhou Wang and Randy Naylor, “Challenges in designing 5 GHz 802.11ac WiFi power amplifiers,” IEEE Power Amplifiers for Wireless and Radio Applications (PAWR), Jan. 2014. [49] Yi-Chi Lee, Tai-Yi Chen, and Jenny Yi-Chun Liu, “An adaptively biased stacked power amplifier without output matching network in 90-nm CMOS,” IEEE MTT-S International Microwave Symposium (IMS), Jun. 2017. [50] 65-nm CMOS process design kit, Taiwan Semiconductor Manufacturing Company (TSMC), Corp. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55417 | - |
dc.description.abstract | 本篇論文包括兩個部分,第一部分為一38 GHz被動式前置失真線性化功率放大器,第二部分是一個高線性度連續F類N型金氧半前置失真線性化功率放大器。這兩個電路皆是使用65奈米互補式金氧半場效電晶體製程來設計,並且都應用於第五代無線通訊系統。 首先第一部分呈現了一個38 GHz功率放大器伴隨著輸出功率1-dB壓縮點與三階交互調變項的改善。此功率放大器是由兩級差動式共源級電晶體前面加入一個被動式前置失真線性器伴隨傳輸線所組成。兩級電晶體皆是偏壓在高AB類區域中獲取較佳的線性度,而被動式前置失真線性器則是操作在特定的控制電壓來獲取1-dB壓縮點的延伸並且分別在連續波形量測下與調變訊號當中能夠針對三階交互調變項與鄰近波道功率比做改善。當開啟這個線性器後,此功率放大器的輸出功率1-dB壓縮點可以由13.2 dBm改善至14.2 dBm,並且伴隨4.7%的功率附加效率增加。然而在雙載波測試中,此功率放大器在三階交互調變項小於-20 dBc的情況下,平均輸出功率可以由9.6 dBm提升至11.2 dBm。除此之外,在調變信號64-QAM 20 MHz的鮑率訊號當中,此功率放大器在平均輸出功率為10.3 dBm時,錯誤向量值能改善3.9 dB (由-28.4 dB降至-32.3 dB),並且伴隨5.3 dB的鄰近波道功率比改善 (由-28.5 dBc降至-33.8 dBc)。 第二部分呈現了一個高線性度連續F類功率放大器伴隨AM-PM的補償。此功率放大器是由兩路差動式共源級電晶體所組成,各路都有一對諧波調整電路與N型金氧半前置失真線性器分別建構在電晶體的汲級與閘級。諧波調整電路是由一串聯電感電容組成針對輸出波形做重整,如此一來功率附加效率就可以有效的提升。此N型金氧半前置失真線性器是用來對AM-PM做補償,透過產生一低損耗反向相位偏移,此電路可以在不影響大訊號表現的情況下,對失真的AM-PM做改善。此功率放大器在27 GHz的頻率下獲取了9.9-dB的小訊號增益,18.4 dBm的飽和輸出功率和37.7%的峰值功率附加效率,以及17.8 dBm的輸出功率1-dB壓縮點和37%的1dB壓縮點功率附加效率。除此之外,在調變信號64-QAM與1.5 Gbps的資料傳輸速度當中,此功率放大器在錯誤向量值小於-25 dB的情況下,平均輸出功率可以達到13.9 dBm,以及24.4%的平均功率附加效率。 | zh_TW |
dc.description.abstract | This thesis consists of two parts. The first part is a 38 GHz power amplifier with cold-FET pre-distortion linearizer. The second part is a high linearity continuous class-F power amplifier with NMOS pre-distortion linearizer. These two works are both fabricated in 65-nm CMOS process and used for fifth-generation wireless communications. In the first part, a 38 GHz power amplifier (PA) with OP1dB and IM3 improvement is presented. This PA constitutes a two-stage differential pair common-source (CS) amplifier and a cold-FET pre-distortion linearizer with additional transmission line in front of the PA. Both stages are biased at high class-AB mode to achieve high linearity. The cold-FET pre-distortion linearizer is operated with specific voltage control (Vctrl) to achieve OP1dB extension with IM3 and ACPR reductions at both continuous wave (CW) measurement and digital modulation. By enabling the linearizer, the OP1dB is improved from 13.2 to 14.2 dBm with 4.7% efficiency increase, and the average output power under -20 dBc IMD3 is increased from 9.6 to 11.2 dBm for the two-tone test. In addition, in the digital modulation of 64-QAM with 20 MHz baud rate, under the average output power of 10.3 dBm, the error vector magnitude (EVM) is reduced by 3.9 dB (from -28.4 to -32.3 dB), and the adjacent channel power ratio (ACPR) is suppressed with 5.3 dB improvement (from -28.5 to -33.8 dBc). In the second part, a high linearity continuous class-F (CCF) power amplifier with AM-PM compensation is presented. This CCF PA comprises a two-way combined differential CS cells with a pair of harmonically tuned network and NMOS pre-distortion linearizer at drain and gate terminal respectively. The harmonically tuned network consists of a shunt L-C pair to achieve waveform rectification, hence the power efficiency can be boosted. The NMOS pre-distortion linearizer is used for AM-PM compensation. By demonstrating negative phase deviation with low insertion loss, the distorted AM-PM can be improved without degrading the large signal performance. This CCF PA achieves 9.9-dB small-signal gain, 18.4 dBm Psat with 37.7% PAEmax, and 17.8 dBm OP1dB with 37% PAE1dB at 27 GHz CW measurement. In addition, under the modulated scheme of 64-QAM with 1.5 Gbps data rate, this CCF PA achieves -25 dB EVM with average output power of 13.9 dBm and average PAE of 24.4%. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T04:01:21Z (GMT). No. of bitstreams: 1 U0001-3007202010385500.pdf: 10356094 bytes, checksum: 5bd282353b67e9642765409e355e4397 (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | 誌謝 i 中文摘要 ii ABSTRACT iv CONTENTS vi LIST OF FIGURES viii LIST OF TABLES xix Chapter 1 Introduction 1 1.1 Background and Motivations 1 1.2 Literature Survey 3 1.3 Contributions 9 1.3.1 38 GHz Linear Power Amplifier [46] 9 1.3.2 High Linearity Continuous Class-F Power Amplifier [47] 10 1.4 Thesis Organization 11 Chapter 2 Design of a 38 GHz Power Amplifier with Cold-FET Pre-Distortion Linearizer in 65-nm CMOS Process 12 2.1 Introduction 12 2.2 Circuit Design 14 2.2.1 Circuit Architecture 15 2.2.2 Device Size Selection 16 2.2.3 Neutralization Technique 24 2.2.4 Transformer Design 35 2.2.5 Cold-FET Pre-Distortion Linearizer 43 2.2.6 Circuit Schematic and Simulation Results 54 2.3 Experimental Results 62 2.4 Summary 74 Chapter 3 Design of a High Linearity Continuous Class-F Power Amplifier with AM-PM Compensation in 65-nm CMOS Process 77 3.1 Introduction 77 3.2 Circuit Design 82 3.2.1 Circuit Architecture 82 3.2.2 Device Size Selection 84 3.2.3 Harmonically Tuned Network Design 90 3.2.4 Transformer Design 97 3.2.5 NMOS Pre-Distortion Linearizer 100 3.2.6 Circuit Schematic and Simulation Results 104 3.3 Experimental Results 113 3.3.1 Small-Signal and Large-Signal Results 114 3.3.2 Digital Modulation 122 3.4 Summary 132 Chapter 4 Conclusion 135 REFERENCE 136 | |
dc.language.iso | zh-TW | |
dc.title | 互補式金氧半前置失真線性化功率放大器之設計與研究 | zh_TW |
dc.title | Design and Research on Power Amplifiers with Pre-Distortion Linearization Techniques in CMOS process | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃天偉(Tian-Wei Huang),林坤佑(Kun-You Lin),張鴻埜(Hong-Yeh Chang),蔡作敏(Zuo-Min Tsai) | |
dc.subject.keyword | 互補式金氧半製程,前置失真線性化,功率放大器,諧波調整網路,Ka-頻段, | zh_TW |
dc.subject.keyword | CMOS,pre-distortion,power amplifier,harmonically tuned network,Ka-band, | en |
dc.relation.page | 141 | |
dc.identifier.doi | 10.6342/NTU202002077 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2020-07-30 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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