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標題: | 石墨烯夾層有機/無機二維鈣鈦礦垂直型異質高靈敏度光感測電晶體 Ultrasensitive Vertical Organic-Inorganic 2D-Perovskite Phototransistor Based on Graphene-Sandwich Heterojunction and Assisted by Piezoelectricity |
作者: | Yu-Ting Huang 黃雨梃 |
指導教授: | 陳永芳(Yang-Fang Chen) |
關鍵字: | 垂直光電感測器,二維鈣鈦礦,石墨烯,超高偵測率,壓電性質, Vertical Photodetector,2D Perovskite,Graphene,Ultrahigh Detectivity,Piezoelectricity, |
出版年 : | 2020 |
學位: | 碩士 |
摘要: | 石墨烯是透明的,優異的導電二維材料,此外,由於強量子限制,二維鈣鈦礦具有出色的物理性質。通過結合兩種材料的獨特特性,我們以此為基礎上創建了一種超高性能的光電探測器,該探測器是將二維鈣鈦礦夾在兩個單層石墨烯之間。在這種簡單的結構中,與傳統的橫向結構相比,由於較短的通道長度和強電場的作用,激發的載子更容易轉移到石墨烯。除此之外,在元件中插入結構內的薄絕緣層可產生量子隧穿效應並有效減少暗電流。因此,這些元件展現了出色的響應時間和檢測率。響應時間低於14/47 µs,檢測率為〜1013 Jones。值得注意的是,比探測率比沒有絕緣層的器件大兩個數量級,這代表了有史以來所有垂直光電探測器中的最佳性能。此外,借助於壓電材料產生的有效電場,還顯示出增強的光電流。因此,穩定,超快,超靈敏的新型光電探測器為下一代光電器件的開發提供了絕佳的選擇。 Graphene is transparent and excellent conductive 2D material, and owing to strong quantum confinement, 2D perovskites possess exceptional physical properties. By combining the unique properties of both materials, here we create a ultrahigh performance performance photodetector based on the 2D perovskite sandwiched by two monolayer graphene. In this simple structure, photogenerated excitons can be much easier to be separated by the large electric field because of the short channel length and transfer to graphene, comparing with traditionally lateral structure. In addition, a thin insulating layer inserted within the structure is effective to reduce dark current and enables to generate quantum tunneling effect. As a result, the devices reveal outstanding fast response time and specific detectivity with the response time below 14/47 µs and the specific detectivity ~1013 Jones. Notably, the specific detectivity is more than two order of magnitude larger than the devices without the insulating layer, which represents the best performance among all vertical photodetectors ever reported. Moreover, with the assistance of the effective electirc field generated by piezoelectric material, the enhanced photocurrent is also demonstrated. The stable, ultrafast, ultrasensitive new photodetectors therefore provide an excellent alternative for the development of next generation optoelectronic devices. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55195 |
DOI: | 10.6342/NTU202002132 |
全文授權: | 有償授權 |
顯示於系所單位: | 物理學系 |
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U0001-3007202022552000.pdf 目前未授權公開取用 | 10.33 MB | Adobe PDF |
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