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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳俊顯 | |
| dc.contributor.author | Fang-Wei Tien | en |
| dc.contributor.author | 田芳維 | zh_TW |
| dc.date.accessioned | 2021-06-16T03:49:15Z | - |
| dc.date.available | 2015-03-13 | |
| dc.date.copyright | 2015-03-13 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2015-01-26 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55155 | - |
| dc.description.abstract | 本研究以掃描式穿隧顯微破裂接合法(Scanning Tunneling Microscopy break junction, STM-bj)量測一般作為頭基的飽和烷分子，探討分子與電極可能的架接方式。首先，量測1,6-hexanedithiol此典型分子的導電值，發現在1 G0到0.1 G0範圍有文獻未報導過的分子導電值平台訊號累積，推測可能有文獻未報導新的分子架接方式，而提出可能的架接方式為雙頭硫醇僅用一端頭基與電極橋接，即金-硫-金接合點，並探討金-硫-金接點導電值與硫醇分子導電值間的相關性，分析兩組接點構型間出現機率與延伸長度之消長。而為驗證1 G0到0.1 G0範圍的導電值平台為金-硫-金構型，量測一系列不同碳數的僅一端有硫醇官能基的飽和烷，觀察是否有相同導電值平台特徵，實驗結果顯示單頭硫醇在1 G0到0.1 G0範圍內有導電值平台訊號累積，且不同碳數的單頭硫醇導電值相近，支持此假設的架接方式。然而單頭硫醇量測的導電值較文獻理論計算金-硫-金小，推測由於硫醇分子與金電極有複雜接合點構型，造成實驗值與理論值的差異，目前較新的文獻以複雜接合點構型模擬硫醇分子的電性行為以期更符合實際實驗的構型。由於觀察到硫醇分子有金-硫-金的架接方式，因此檢驗其他作為電性量測的頭基官能基，是否也有金-元素-金接合點形成，實驗結果顯示僅含硫之頭基有金-元素-金的現象。最後，當有單頭硫醇和單頭異氰酸酯分子存在時，一條金原子串的導電值(1G0)發生波峰變寬的現象，推測是由於分子吸附於金電極，影響金原子導線的結構，進而影響金原子串電性之表現。 | zh_TW |
| dc.description.abstract | 1,6-hexanedithiol (HDT) is measured by scanning tunneling microscopy break junction (STM-bj). In comparison to sets of conductance values previously reported, in this study another set of conductance value ranged from 1.0 G0 to 0.01 G0 is detected. This set of conductance values might arise from another contact geometry of molecule and electrode. This contact geometry is proposed here as a sulfur at the end of HDT being inserted into the gold contact, forming Au-S-Au junction. To examine the validity of the proposed mechanism, single molecule conductance of alkanethiols (CH3(CH2)n-1SH, n = 4, 6, 8, 10, 12) is measured by STM-bj. Results show that the conductance values of alkanethiols are almost the same. And the fact that the conductance values of alkanethiols are almost the same as the conductance values of this HDT might arise from another contact geometry, Au-S-Au. However, the conductance values of alkanethiols are smaller than the values calculated by theoretical models. It is speculated that these models are too simplified and can not simulate the experimental condition. Conductance histograms show that in solutions containing compounds with thiol or isothiocyanate as head group result in the broadening of peak at 1.0 G0. It is proposed that peak broadening arises from these compounds absorbing onto gold electrodes. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T03:49:15Z (GMT). No. of bitstreams: 1 ntu-103-R01223171-1.pdf: 4612402 bytes, checksum: e788e8d0210273c39a38008a8bf742ed (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 摘要 I
Abstract II 誌謝 III 總目錄 IV 圖目錄 VI 表目錄 VIII 第一章 緒論 1 1.1 前言 1 1.2 單分子電性之量測方法 1 1.2.1 機械式控制破裂接合法 2 1.2.2 單層膜基質隔離法 3 1.2.3 掃描探針顯微術破裂接合法 5 1.2.3.1 掃描穿隧顯微術破裂接合法 5 1.2.3.2 導電原子力顯微破裂接合法 6 1.2.4 STM I(s)及STM I(t)量測技術 7 1.3 探討分子頭基橋接的方式 8 1.3.1 兩端頭基為硫醇的架接方式 9 1.3.2 兩端頭基為胺基的架接方式 10 1.3.3 頭基為異氰酸酯基、氰基、碘之分子電性 11 1.4 金屬串簡介 13 1.4.1 直線型金屬串分子結構 13 1.4.2 金屬-金屬鍵結理論 15 1.4.3 金屬串分子電性研究 16 1.5 本論文研究動機 19 第二章 實驗部分 20 2.1 實驗藥品、耗材及儀器 20 2.1.1 實驗藥品 20 2.1.2 實驗耗材 21 2.1.3 實驗儀器 21 2.2 實驗流程 22 2.2.1 金薄膜的製備 22 2.2.2 金屬探針的製備 22 2.2.3 組裝STM樣品槽 23 2.2.4 儀器操作流程 23 2.3 實驗數據處理 24 2.3.1 導電值直方統計圖 24 2.3.2 導電值-位移二維統計圖 25 2.3.3 二維相關係數分布圖 25 2.3.4 導電值平台篩選程式 26 第三章 結果與討論 28 3.1 探討分子與電極的架接方式 28 3.1.1 [Ni3(dpa)4(NCS)2]、[Ni5(tpda)4(NCS)2]的導電值量測 28 3.1.2 硫醇分子與電極的架接方式 29 3.1.3 金-硫-金接點導電值與硫醇分子導電值間的相關性 31 3.1.4 飽和烷單頭硫醇的導電值量測 33 3.1.5 單頭硫醇的量測結果討論 37 3.1.5.1 單頭硫醇的導電值探討 37 3.1.5.2 單頭硫醇的導電值與接觸導電值之探討 39 3.2 量測一般作為頭基之單頭官能基飽和烷 40 3.2.1 飽和烷單頭異硫氰酸酯的導電值量測 40 3.2.2 其他官能基之單頭頭基飽和烷的導電值量測 43 第四章 總結 45 第五章 參考文獻 46 附錄 54 | |
| dc.language.iso | zh-TW | |
| dc.subject | 電子元件 | zh_TW |
| dc.subject | 分子導電值 | zh_TW |
| dc.subject | 掃描穿隧顯微術 | zh_TW |
| dc.subject | molecular conductance | en |
| dc.subject | scanning tunneling microscopy | en |
| dc.title | 單分子接合點架接方式之研究：
以掃描穿隧顯微術探討金屬－頭基－金屬之結構 | zh_TW |
| dc.title | A Bridging Structure in Single Molecular Junctions:
the Verification of Metal－Headgroup－Metal Junction by Scanning Tunneling Microscopy | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 103-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林淑宜,陳以文,詹揚翔 | |
| dc.subject.keyword | 電子元件,掃描穿隧顯微術,分子導電值, | zh_TW |
| dc.subject.keyword | scanning tunneling microscopy,molecular conductance, | en |
| dc.relation.page | 56 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2015-01-26 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 化學研究所 | zh_TW |
| 顯示於系所單位： | 化學系 | |
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