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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Zhen-Hao Li | en |
dc.contributor.author | 李振豪 | zh_TW |
dc.date.accessioned | 2021-06-16T03:43:11Z | - |
dc.date.available | 2018-03-13 | |
dc.date.copyright | 2015-03-13 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-02-10 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/54975 | - |
dc.description.abstract | 本論文以原子層沉積系統 (ALD) 成長高介電係數材料-氧化鋁 (Al2O3) 於砷化銦 (InAs) 基板,製作成金氧半電容元件 (Metal-oxide-semiconductor capacitor, MOSCAP)。我們於 ALD 成長前使用三甲基鋁 (TMA) 進行前置處理,並透過 X光射線電子能譜 (XPS) 之量測,確認氧化層-半導體界面之原生氧化物被有效抑制。經由穿隧式電子顯微鏡 (TEM) 影像,確認我們所成長的氧化層則為非晶體 (amorphous),具有良好的閘極漏電流抑制能力,其在 -1 V 時的閘極漏電流密度約為 1×10-8 A/cm2。我們導入了金屬後退火製程,改善費米能階釘扎現象,其電容調變率在室溫 300 K 下可達 32.3 %。
本論文亦在室溫與低溫中進行變頻之電容-電壓量測,觀察到經過金屬後退火處理之元件,於 120 K 的低溫時並未在反轉區有反轉的現象,顯示我們成功改善其界面缺陷。透過電導法,我們求得其在 150 K 下靠進能隙中央處 (mid-gap) 之界面缺陷密度為 1.14×1013 cm-2eV-1 。 | zh_TW |
dc.description.abstract | In this study, we deposited high dielectric constant material Al2O3 on InAs substrate by ALD and fabricated the Metal-oxide-semiconductor capacitor (MOSCAP). We applied the Try-methyl-aluminum (TMA) pretreatment before oxide growth by ALD, and native oxides was effectively suppressed, which is confirmed by XPS. By TEM image, we found that the oxide layer is amorphous and considered to be good at suppressing gate leakage current, which is about 1×10-8 A/cm2 at -1 V. We also applied post metal annealing to improve the Fermi-level pinning due to interface traps and the capacitance modulation was improved to 32.3 % at room temperature.
We measured frequency-variant capacitance-voltage curve under room temperature and low temperature environment. We found that the post-metal-annealed device didn’t inverse in inversion region in low temperature environment (120 K), indicating that we succeeded in improving the interface trap. The interface trap density near mid-gap was 1.14×1013 cm-2eV-1, which is extracted by conductance method. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T03:43:11Z (GMT). No. of bitstreams: 1 ntu-104-R01943166-1.pdf: 3121278 bytes, checksum: 91dd65292cd1edae61d166d9d2c7f674 (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | 中文摘要 i
Abstract ii 目錄 iii 圖目錄 v 表目錄 vii 第一章、導論 1 1-1,前言 1 1-2,研究動機 2 1-3,論文架構 5 第二章、理論介紹與實驗方法 6 2-1,金氧半電容物理特性 6 2-2,氧化層的缺陷電荷 11 2-3,界面缺陷密度分析 12 2-3-1電導法 13 2-3-2高低頻電容法 15 2-4,界面缺陷分佈與頻率響應特性 16 2-5,原子層沉積系統 18 2-6, X 射線光電子能譜 20 第三章、氧化鋁/砷化銦金氧半電容元件製作與分析 21 3-1,試片準備及量測簡介 21 3-2,氧化層成長與穿隧式電子顯微鏡分析 22 3-3,三甲基鋁前置處理 26 3-4,金屬後退火處理 30 3-4-1,金屬後退火處理時間比較 30 3-4-2,金屬後退火處理溫度比較 34 3-5 氧化鋁/砷化銦金氧半結構之變溫界面缺陷分析 36 3-5-1低溫電容特性 36 3-5-2 界面缺陷密度分析 41 第四章、結論 43 參考文獻 44 | |
dc.language.iso | zh-TW | |
dc.title | 氧化鋁/砷化銦金氧半電容製備與特性分析 | zh_TW |
dc.title | Fabrication and Characterization of Al2O3/InAs Metal-Oxide-Semiconductor Capacitor | en |
dc.type | Thesis | |
dc.date.schoolyear | 103-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 胡振國,陳敏璋,柯誌欣 | |
dc.subject.keyword | 砷化銦,氧化鋁,原子層沉積,金氧半電容,金屬後退火處理, | zh_TW |
dc.subject.keyword | InAs,Al2O3,ALD,MOSCAP,Post metal annealing, | en |
dc.relation.page | 46 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-02-11 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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