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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 李嗣涔(Si-Chen Lee) | |
dc.contributor.author | Zheng-Jie Huang | en |
dc.contributor.author | 黃政傑 | zh_TW |
dc.date.accessioned | 2021-06-16T02:42:17Z | - |
dc.date.available | 2018-07-23 | |
dc.date.copyright | 2015-07-23 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-07-21 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/54154 | - |
dc.description.abstract | 本論文使用機械剝離法分離出擁有奈米級厚度的二硫化鉬,並製作出薄膜電晶體。利用光學顯微鏡及原子力顯微鏡的搭配篩選出較佳厚度範圍的二硫化鉬,並搭配使用低功函數金屬鈦當作金屬電極來達成歐姆接觸。電晶體的表現可以達到電流開關比為8數量級的電晶體,場效電子遷移率可以達到約16cm2/V-sec。傳統上為了有好的光干涉條件以辨別二硫化鉬膜厚度,使用約300奈米的二氧化矽,導致閘極控制電壓過高,所以此篇論文使用更薄的高介電係數氧化層氧化鋁當作閘極介電層,發現製作出來的薄膜電晶體有很好的特性,電流開關比也可達到6×107的數量級,場效電子遷移率可以達到約23cm2/V-sec,而使用氧化鉿作閘極介電層之薄膜電晶體更可達到電子遷移率約28cm2/V-sec,次臨界擺幅可以降低至127mV/dec,閘極電壓降到±1V,達到更佳的電性。
另外在本論文中還發現在空氣中,二硫化鉬在表面會明顯的物理吸附水氣和氧分子,導致元件操作穩定度下降,以及更嚴重的遲滯效應。透過真空量測和保護層的方法,可以明顯降低此種現象。 | zh_TW |
dc.description.abstract | In this thesis, the mechanically exfoliated 2D material MoS2 nanosheet was used to fabricate thin film transistor and their electrical properties were investigated as well. By checking their thickness by optical microscopy and atomic force microscopy, the nanosheet with an appropriate thickness can be selected. It was found that the ohmic contact on MoS2 can be achieved by low work function metal titanium. The performance of TFTs achieved the high on/off current ratio up to 8 th order of magnitude and the mobility of 16 cm2/V-sec. However, in order to identify MoS2 thickness on SiO2/Si substrate by means of better optical interference, the thickness of silicon dioxide was limited to 300nm thick. The thick oxide lead to very high gate control voltage. To reduce the operation voltage, the use of thinner high-k gate dielectric Al2O3 and HfO2 were used, resulting in much better performances than traditional SiO2. The on/off current ratio for Al2O3 gate insulator thin film transistor was 6×107 and mobility of 23 cm2/V-sec. HfO2 gate insulator could even boost the mobility to 28 cm2/V-sec and the sub-threshold swing to only 127mV/dec, combining with the gate operation voltage below ±1 V.
In addition, it was also found that the oxygen and water molecules were easily absorbed at the MoS2 surface in air, which would deteriorate the stability and hysteresis of devices. Finally, the high vacuum measurement method and passivation layer were used to improve the stability. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T02:42:17Z (GMT). No. of bitstreams: 1 ntu-104-R02943079-1.pdf: 3558039 bytes, checksum: 5c69ab2c67aa0adaa92d2298350b9ca0 (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | 中文口試委員審定書 i
誌謝 ii 摘要 iii ABSTRACT iv CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xiii Chapter 1 Introduction 1 1.1 Overview of Molybdenum Dulfide 1 1.2 Transferring Technique of Molybdenum Disulfide 7 1.3 The Prospect of Two Dimensional Materials FETs 8 Chapter 2 Experiments 15 2.1 Deposition System 15 2.1.1 Deposition Procedures. 15 2.1.2 The Growth Mechanism of ALD 16 2.2 Measurement Techniques 20 2.2.1 Atomic Force Microscopy(AFM) 20 2.2.2 Raman Spectroscopy 20 2.2.3 Photoluminescence(PL) 21 2.2.4 X-ray Photoelectron Spectroscopy (XPS) 21 2.2.5 X-ray Diffraction(XRD) 22 2.2.6 Multi-frequency Capacitance Measurement 22 2.2.7 Current – Voltage Characteristics 23 2.2.8 High Vacuum Current – Voltage Characteristics 23 Chapter 3 Material Analysis for MoS2 24 3.1 Substrate Preparation 24 3.2 Preparation of Exfoliated MoS2 26 3.3 Characterization of MoS2 Film Thickness 27 3.3.1 Optical Microscopy 27 3.3.2 Atomic Force Microscopy 30 3.4 X-Ray Diffraction Measurements of MoS2 bulk 32 3.4.1 Interlayer Spacing Calculation 33 3.5 Optical and Vibrational Properties of MoS2 33 3.5.1 Raman Spectroscopy 33 3.5.2 Photoluminescence 35 3.6 Stability of MoS2 in Air 36 Chapter 4 MoS2 Thin Film Transistors 39 4.1 Back-gated TFTs of MoS2 39 4.1.1 Ideal Layer Thickness for MoS2 TFTs 39 4.1.2 Device Process Flow 41 4.1.3 Band Diagram of MoS2 TFTs 44 4.1.4 Device Performance 47 4.2 MoS2 Back-gated TFTs with High-k Gate Insulator 50 4.2.1 C-V Characteristics of ALD Aluminum Oxide 52 4.2.2 MoS2 Back-gated TFTs with Aluminum Oxide Gate Insulator 54 4.2.3 MoS2 Back-gated TFTs with Hafnium Oxide Gate Insulator 58 4.3 Stability of MoS2 TFTs in Air on 300nm SiO2 64 4.4 Hysteresis in Back-gated MoS2 TFTs 66 Chapter 5 Conclusions 70 References 72 | |
dc.language.iso | en | |
dc.title | 高介電係數閘極氧化層應用於二維材料二硫化鉬薄膜電晶體特性和探討 | zh_TW |
dc.title | Characterization and Study of Two Dimensional Material Molybdenum Disulfide Thin Film Transistors with
High-k Gate Dielectric | en |
dc.type | Thesis | |
dc.date.schoolyear | 103-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林浩雄(Hao-Hsiung Lin),劉致為(Chee-Wee Liu),林清富(Ching-Fuh Lin),吳志毅(Chih-I Wu) | |
dc.subject.keyword | 二硫化鉬薄膜電晶體,高介電係數氧化層,氧化鋁,二氧化鉿,遲滯效應, | zh_TW |
dc.subject.keyword | molybdenum disulfide (MoS2) thin film transistor,high-k insulator,aluminium oxide (Al2O3),hafnium oxide (HfO2),hysteresis effect, | en |
dc.relation.page | 76 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-07-21 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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