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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 陳逸聰(Yit-Tsong Chen) | |
dc.contributor.author | Tzu-Justine Ling | en |
dc.contributor.author | 凌子庭 | zh_TW |
dc.date.accessioned | 2021-06-16T02:29:36Z | - |
dc.date.available | 2018-08-05 | |
dc.date.copyright | 2015-08-05 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-07-31 | |
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P.; Srivastava, N.; Feenstra, R.; Eres, G.; Parish, C.; Lavrik, N.; Datskos, P.; Dai, S.; Fulvio, P., Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure. The Journal of Physical Chemistry C 2013, 117 (37), 18919-18926. 23. Lee, S.-J.; Chen, Y.-H.; Hung, J.-C., The investigation of Surface Morphology forming mechanisms in electropolishing process. International Journal of Electrochemical Science 2012, 7, 12495 - 12506. 24. Chang, S.-C.; Shieh, J.-M.; Huang, C.-C.; Dai, B.-T.; Li, Y.-H.; Feng, M.-S., Microleveling mechanisms and applications of electropolishing on planarization of copper metallization. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002, 20 (5), 2149. 25. Awad, A. M.; Ghany, N. A. A.; Dahy, T. M., Removal of tarnishing and roughness of copper surface by electropolishing treatment. Applied Surface Science 2010, 256 (13), 4370-4375. 26. Luo, Z.; Lu, Y.; Singer, D. W.; Berck, M. E.; Somers, L. 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Journal of Materials Research 2014, 29 (03), 403-409. 30. Chen, S.; Ji, H.; Chou, H.; Li, Q.; Li, H.; Suk, J. W.; Piner, R.; Liao, L.; Cai, W.; Ruoff, R. S., Millimeter-size single-crystal graphene by suppressing evaporative loss of Cu during low pressure chemical vapor deposition. Advanced materials 2013, 25 (14), 2062-5. 31. (a) Ni, Z. H.; Wang, H. M.; Kasim, J.; Fan, H. M.; Yu, T.; Wu, Y. H.; Feng, Y. P.; Shen, Z. X., Graphene thickness determination using reflection and contrast spectroscop. Nano Letters 2007, 7 (9), 2758-2763; (b) Blake, P.; Hill, E. W.; Neto, A. H. C.; Novoselov, K. S.; Jiang, D.; Yang, R.; Booth, T. J.; Geim, A. K., Making Graphene Visible. Applied Physical Letters 2007, 91, 063124(3pp). 32. Malard, L. M.; Pimenta, M. A.; Dresselhaus, G.; Dresselhaus, M. S., Raman spectroscopy in graphene. Physics Reports 2009, 473 (5-6), 51-87. 33. Thomsen, C.; Reich, S., Double resonant raman scattering in graphite. Physical Review Letters 2000, 85 (24), 5214-5217. 34. Bjorkman, T.; Kurasch, S.; Lehtinen, O.; Kotakoski, J.; Yazyev, O. V.; Srivastava, A.; Skakalova, V.; Smet, J. H.; Kaiser, U.; Krasheninnikov, A. V., Defects in bilayer silica and graphene: common trends in diverse hexagonal two-dimensional systems. Scientific Reports 2013, 3, 3482. 35. Park, J. S.; Reina, A.; Saito, R.; Kong, J.; Dresselhaus, G.; Dresselhaus, M. S., band Raman spectra of single, double and triple layer graphene. Carbon 2009, 47 (5), 1303-1310. 36. Liang, X. L.; Sperling, B. A.; Calizo, I.; Cheng, G. J.; Hacker, C. A.; Zhang, Q.; Obeng, Y.; Yan, K.; Peng, H. L.; Li, Q. L.; Zhu, X. X.; Yuan, H.; Walker, A. R. H.; Liu, Z. F.; Peng, L. M.; Richter, C. A., Toward Clean and Crackless Transfer of Graphene. ACS Nano 2011, 5 (11), 9144-9153. 37. Pan, G.; Li, B.; Heath, M.; Horsell, D.; Wears, M. L.; Al Taan, L.; Awan, S., Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films. Carbon 2013, 65, 349-358. 38. 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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/53782 | - |
dc.description.abstract | 石墨烯(graphene)自從被發現以來即被受到高度的重視與研究,其高化學穩定性、高載子遷移率、高導熱及導電性、獨特的光學性質等,有潛力取代目前以矽為主的電晶體,成為新一代的二維材料,因此合成大面積且高品質的石墨烯也成為近年來熱門的課題。
本研究利用化學氣相沉積法(chemical vapor deposition, CVD)在銅箔上合成大面積且高品質的單晶石墨烯,為了擴大石墨烯的面積,其中關鍵的要素在於降低石墨烯的成核密度(nucleation density),因此我們嘗試了各種方法,包含銅箔的前處理、合成時的裝置設計及各參數的調整,致力於得到更大面積的石墨烯。 在銅箔前處理部分,因裂解的碳原子沿著銅箔的表面成長,故銅箔表面的形貌會影響到石墨烯品質,因此我們先利用電解拋光(electropolishing)的技術製備表面平坦的銅箔;接著,我們將銅箔氧化形成一層氧化銅,在高溫下裂解的碳原子會與銅箔表面的氧氣反應形成二氧化碳及一氧化碳並離開表面,因此降低了碳原子在銅箔表面的成核機率。進行合成時,我們採用狹縫狀的腔體設計,並改變狹縫的長度,來改善現有的化學氣相沉積系統,不僅降低了成核密度也提升了石墨烯的品質,目前成功合成出單一核種達700 μm的單晶高品質石墨烯。另外也使用光學顯微鏡、電子顯微鏡、拉曼光譜及聚焦電子束繞射,進一步鑑定所合成為高品質的石墨烯。 | zh_TW |
dc.description.abstract | Graphene has been highly paid attention to since its discovery because of the highly chemical stability, high carrier mobility, thermal conduction, and the unique optical properties. It is the candidate of the new 2D material and has the potential to replace the silicon transistor. As a result, synthesizing large-area and high-quality graphene has been the popular research recently.
In our research, we synthesize large-area and high-quality single-crystalline graphene on copper foil by chemical vapor deposition. In order to enlarge the graphene domain size, the key point is to lower its nucleation density. We try several methods, including the copper pretreatment, device design and parameter adjustment during the graphene growth. In the part of copper pretreatment, we do electropolishing and oxidation. Because the active carbon species grow along the copper surface and the morphology of copper affects the quality of graphene, we do electropolishing to flatten the copper surface to lower the possibility of the graphene nucleation. On the other hand, we oxidize copper to form cuprous oxide(Cu2O) and cupric oxide(CuO2) on the surface. During the high temperature, carbon atoms will act with oxide and become carbon oxide(CO) and carbon dioxide(CO2) which leave the surface. This also helps to reduce the nucleation density. During synthesis, we design a special CVD reactor to allow the graphene to grow within a confined reaction space, which also reduces the nucleation density. Finally, we use optical microscope, electron microscope, Raman spectrometer and selected-area electron pattern(SAED) to identify the quality of graphene. From now on, we have successfully synthesized single-crystalline graphene with 700 μm in diagonal length. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T02:29:36Z (GMT). No. of bitstreams: 1 ntu-104-R02223152-1.pdf: 4639846 bytes, checksum: cdfb5f54f32fa1906eb88097cd845d2a (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | 口試委員審定書 i
誌謝 ii 中文摘要 iii ABSTRACT iv 目錄 v 圖目錄 viii 表目錄 xi 第一章、 緒論與動機 1 第二章、 文獻回顧 2 2.1石墨烯簡介 2 2.1.1基本性質 2 2.1.2發展背景 2 2.2石墨烯的基本性質 3 2.2.1石墨烯的物理特性 3 2.2.2石墨烯的晶格結構8 4 2.2.3石墨烯的能帶結構 5 2.3石墨烯的製備方法 6 2.3.1機械剝離法(mechanical exfoliation) 7 2.3.2磊晶成長法(epitaxial growth) 7 2.3.3氧化石墨烯還原法(reduction from graphene oxide) 8 2.3.4化學氣相沉積法(chemical vapor deposition) 9 2.4化學氣相沉積法 9 2.4.1化學氣相沉積法研究進展 9 2.4.2化學氣相沉積法成長機制 10 2.5銅箔的電解拋光 15 2.5.1電解拋光原理 15 2.5.2電解拋光反應機制24 17 2.5.3以電解拋光銅箔成長石墨烯 22 2.6銅箔的氧化處理 24 2.7狹縫設計 26 2.8石墨烯的檢測方法 28 2.8.1光學散射 28 2.8.2拉曼光譜 29 第三章、 實驗方法與材料 34 3.1實驗步驟流程 34 3.2銅箔前處理 34 3.2.1銅箔的電解拋光 34 3.2.2銅箔的氧化 35 3.3以化學氣相沉積法製備石墨烯 35 3.3.1 CVD儀器架構 35 3.3.2狹縫設計 37 3.4石墨烯轉印製程 37 3.5檢驗儀器 39 3.5.1光學顯微鏡 39 3.5.2電子顯微鏡 39 3.5.3原子力顯微鏡(atomic force microscope, AFM) 40 第四章、 結果與討論 42 4.1電解拋光 42 4.1.1電壓的調控 42 4.1.2時間的調控 43 4.1.3電解液的組成 44 4.2石墨烯合成 44 4.2.1狹縫設計的影響 45 4.2.2退火程序參數最佳化 47 4.2.3電解拋光的影響 48 4.2.4氧化銅箔的影響 50 4.2.5反應參數的影響 53 4.3石墨烯品質鑑定 59 4.3.1以PMMA法轉置石墨烯 59 4.3.2拉曼光譜鑑定 59 4.3.3選區電子束繞射圖譜 63 4.4結論 64 | |
dc.language.iso | zh-TW | |
dc.title | 以化學氣相沉積法合成大面積高品質單晶石墨烯 | zh_TW |
dc.title | Synthesis of Large-Area Single-Crystalline Graphene by Enclosure-Assisted Chemical Vapor Deposition | en |
dc.type | Thesis | |
dc.date.schoolyear | 103-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 溫政彥,林宗吾 | |
dc.subject.keyword | 石墨烯,單晶,化學氣相沉積,電解拋光, | zh_TW |
dc.subject.keyword | graphene,single crystalline,chemical vapor deposition(CVD),electro-polishing, | en |
dc.relation.page | 68 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-07-31 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 化學研究所 | zh_TW |
顯示於系所單位: | 化學系 |
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