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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李坤彥(Kung-Yen Lee) | |
| dc.contributor.author | Yuan-Heng Liu | en |
| dc.contributor.author | 劉原亨 | zh_TW |
| dc.date.accessioned | 2021-06-15T16:35:45Z | - |
| dc.date.available | 2017-08-17 | |
| dc.date.copyright | 2015-08-17 | |
| dc.date.issued | 2015 | |
| dc.date.submitted | 2015-08-12 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52952 | - |
| dc.description.abstract | 本論文是使用碳化矽基板4H-SiC製作改良圖形後的高電壓接面位障蕭基二極體元件(Junction barrier Schottky diode, JBS)。JBS元件在順向操作時，其導通的時候有蕭基二極體(SBD)的低導通電壓及切換速度高的優點；而在逆向偏壓時，能利用PN接面形成的空乏區夾住通道，使逆向漏電流很小，因此有如PN二極體低漏電、高崩潰電壓的優點。
為了將元件有更好的順逆向電流、電壓特性表現，本論文設計了多種不同的P+離子佈植圖形以及比例：同心圓、片段式同心圓、長條形、片段式長條形、方形陣列等，並改良之前學長的圖形，將方形點的邊緣修改得更為圓滑，以減少尖端電荷容易造成電場崩潰，除了圖形的不同，還有加上不同的P+佈植間距，而創造出不同面積比例的蕭基接面，並比較不同設計對其順向導通電壓、電流密度、逆向元件漏電流、崩潰電壓的影響。 製作完成後，依量測結果判斷，相較於同心圓，片段式的同心圓會有比較高的蕭基接面面積比例，因而有比較好的順向電流、電壓特性表現，並且在高溫順向操作時有較小的順向導通電壓偏移量；而經過量測發現，當元件P+佈植間距小於8 ，逆向偏壓操作時PN接面形成的空乏區能將通道夾住，會有較好的漏電流與崩潰電壓表現。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-15T16:35:45Z (GMT). No. of bitstreams: 1 ntu-104-R02525076-1.pdf: 5199504 bytes, checksum: 8024723cbb2982edb8fcff24fc7a2df6 (MD5) Previous issue date: 2015 | en |
| dc.description.tableofcontents | 目錄
誌謝 i 中文摘要 ii Abstract iii 目錄 iiv 圖目錄 v 表目錄 vi 第一章 序論 1 1.1前言 1 1.2碳化矽的材料特性 1 1.3研究動機與研究大綱 3 1.4論文架構 6 第二章 元件基本結構原理 7 2.1蕭基二極體原理特性 7 2.2 PN二極體特性 13 2.3接面位障蕭基二極體 15 2.4邊緣終端保護結構 17 2.4.1 簡介與原理 17 2.4.2 邊緣終端保護結構種類 19 第三章 光罩設計與元件製程 21 3.1 光罩設計 21 3.2 元件製程 25 3.2.1 實驗光罩流程 25 3.2.2 碳化矽基板參數 28 3.2.3 實驗製程步驟 28 第四章 元件模擬與實驗結果討論 46 4.1 JBS元件電性模擬 46 4.2 元件實際順向偏壓特性分析 57 4.2.1 SBD順向偏壓特性 57 4.2.2 PiN順向偏壓特性 60 4.2.3 SBD、JBS同心圓4:4、PiN順向偏壓特性比較 62 4.2.4 JBS同心圓順向偏壓特性比較 63 4.2.5 JBS方形陣列順向偏壓特性比較 66 4.2.6 JBS其他圖形順向偏壓特性比較 69 4.3 元件實際高溫順向偏壓特性分析 71 4.3.1 SBD高溫順向偏壓特性 71 4.3.2 PiN高溫順向偏壓特性 73 4.3.3 JBS同心圓、方形陣列高溫順向偏壓特性 75 4.4 元件實際逆向偏壓特性分析 77 4.4.1 SBD、JBS同心圓4:4、PiN逆向偏壓特性比較 77 4.4.2 JBS同心圓逆向偏壓特性 78 4.4.3 JBS方形陣列逆向偏壓特性 79 4.4.4 JBS其他圖形逆向偏壓特性 80 4.5 SBD接面電容特性分析 81 第五章 結論與未來展望 84 參考文獻 85 | |
| dc.language.iso | zh-TW | |
| dc.title | 4H-SiC 接面位障蕭基二極體製作 | zh_TW |
| dc.title | Fabrication of 4H-SiC Junction Barrier Schottky Diode | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 103-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃智方(Chih-Fang Huang),李佳翰,胡振國 | |
| dc.subject.keyword | 4H-SiC,接面位障蕭基二極體(JBS),蕭基二極體(SBD),P+離子佈植圖形,蕭基位障, | zh_TW |
| dc.subject.keyword | 4H-SiC,JBS,SBD,P+ implant patterns and Schottky barrier, | en |
| dc.relation.page | 87 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2015-08-12 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
| 顯示於系所單位： | 工程科學及海洋工程學系 | |
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