低溫基板黏接鍵合應用於砷化鎵微碟共振腔垂直耦合

Abstract

在本篇論文中，我們使用苯環丁烯進行低溫基板黏接鍵合，將具有氮化矽波導的砷化鎵樣品黏接鍵合到矽基板上，並使用檸檬酸蝕刻液選擇性蝕刻砷化鎵/砷化鋁鎵，移除了砷化鎵基板，然後製作出與波導垂直耦合的微碟共振腔。 我們進行了直徑50μm的微碟共振腔和波導之水平相對位置變化與耦合行為的探討，我們從穿透頻譜得到其模態間距約為3nm，由於其模態間距較小，模態結構複雜，頻譜難以分析。 因此我們製作了直徑20μm的微碟共振腔，並進行其與波導水平相對位置變化與耦合行為的探討，從穿透頻譜得到其模態間距約為9.41nm，並且找到最高的Q值出現在重疊3.7μm時，其Q值達到17800。

In this thesis, we bonded a GaAs sample with SiNx waveguides onto a Si substrate by a low temperature adhesive wafer bonding method with benzocyclobutene. Then, we removed the GaAs substrate using citric acid to selectively etch GaAs against the AlGaAs layer. Thus, we successfully fabricated GaAs microdisks vertically coupled with SiNx waveguides. We investigated the coupling behavior due to different lateral positions between waveguides and microdisks of 50μm in diameter. The free spectral range is about 3nm, which is rather small and results in a complicated modal structure. Therefore, we fabricated microdisks of 20μm in diameter and discuss its coupling behavior when the lateral position between the microdisk and the waveguide is changed. The free spectral range is increased to 9.41nm. The lateral position with highest quality factor of 17800 is achieved when the microdisk overlaps with the waveguide by 3.7μm.