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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 楊申語(Sen-Yeu Yang) | |
dc.contributor.author | Shih-Wei Weng | en |
dc.contributor.author | 翁詩緯 | zh_TW |
dc.date.accessioned | 2021-06-15T16:23:39Z | - |
dc.date.available | 2020-08-20 | |
dc.date.copyright | 2015-08-20 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-08-14 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52695 | - |
dc.description.abstract | 微奈米壓印技術在結構複製上具備高解析、高產能、低成本且可製作大面積等優勢,然而微奈米壓印技術在壓印膠體成型結構後,容易在結構與結構之間留下殘留層,必須以反應離子蝕刻、電子束蝕刻等技術去除,耗費時間與金錢成本。
本研究針對過去低殘留層轉印技術總是著眼於模具或結構製作本身改善,無法廣泛應用於不同結構的缺點,改以製程方式角度切入,開發同時加壓與加溫的加熱型濕式轉印技術,用於一次性轉印出不同的低殘留層結構。研究主要分成三個部分:首先為低殘留層壓印製程的設計與開發;二為低殘留層壓印製程在陣列式排列金字塔型結構上的成型測試;三為在微小尺寸的圓錐與圓柱結構的測試。 第一部分選用V型溝槽結構來開發製程,探討溫度與壓力對壓印的影響,並建立同時加壓與加溫的製程,稱為加熱型濕式轉印,讓結構尖端尚未固化的膠體擠入模穴,得到低殘留層的轉印結果,並以雷射共軛焦顯微鏡進行量測,討論其成型結果與膠體旋轉塗佈厚度之關係,確立製程,並且找出壓力與旋轉塗佈厚度對殘留層厚度的影響;第二部分將低殘留層製程應用於陣列式金字塔型結構的成型,先以黃光微影製程製作母模,並翻製成PDMS模具,進行加熱型濕式轉印壓印參數的探討,確認低殘留層製程可應用在其他陣列式結構上;第三部分將低殘留層壓印製程應用於圖案化藍寶石基板(Pattern sapphire substrates, PSS)的圓錐與圓柱結構的成型,並分析比較在緊密排列pitch約3 um的結構壓印壓力與殘留層厚度的關係,結果顯示在40 kgf/cm2時甚至可使殘留層厚度低於200 nm,符合PSS製備的需求。 | zh_TW |
dc.description.abstract | In recent years, imprinting of large-area micro and nanostructures have been widely used in many products, such as monitor, solar panel and bio-sensor etc. However, the removal of the residual layer after the imprinting is complicated and time-consuming. Most are processed using a reactive ion etching (RIE) or electron-beam (E-beam) lithography post processing step. Therefore, to imprint micro and nanostructures without the residual layer in a simple and inexpensive way is a big challenge.
This research is devoted to developing an imprinting process which can reduce the residual layer. There are three main topics in this research: the development of the low residual layer imprinting, test of the imprinting process on the pyramid structures, and the application of this process on the imprinting of array of column and cone-shaped structures with low residual layer. First of all, we chose a simple microstructure (v-cut) and a proper resin for the development of this process. After investigating the relationship between the resin, temperature and pressure, we developed the heating wet transfer process, the pressure squeezed the resin from the convex surface into the concave of the mold, and the heat solidified the whole resin in the cavity. Then, we investigated the effects of spin-coating and the pressure on reducing the residual layer. With above parameters, the process of low residual layer imprinting v-cut microstructures has been developed. Second, we applied the process on the pyramid structures to prove that the process could be widely use on different mold. The pyramid structures mold was fabricated by lithography method. We successfully formed the pyramids with low residual layer with our process and compared the parameters on different mold imprinting. Lastly, the pattern sapphire substrates (PSS) has been chosen as the master mold on our process as the application. After discussion of the relationship between the imprinting pressure and the residual layer thickness, we successfully imprinted the structure with the residual lower than 200 nm with the process. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T16:23:39Z (GMT). No. of bitstreams: 1 ntu-104-R02522712-1.pdf: 16063023 bytes, checksum: 6c1e81273b3dae1ef29821f66c0570a5 (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | 誌謝 i
中文摘要 ii ABSTRACT iii 目次iv 圖目錄 x 表目錄 xvii 第一章 導論 1 1.1 微奈米結構製造與應用 1 1.2 微壓印技術簡介 2 1.2.1 微熱壓成型技術 2 1.2.2 氣體輔助壓印成型技術 3 1.2.3 UV微奈米壓印成型技術 4 1.3 結構複製技術上的殘留層問題 5 1.4 研究動機與目標 5 1.5 論文架構 7 第二章 文獻回顧 14 2.1 熱固化壓印成型技術 14 2.1.1 微熱壓結構成型技術 14 2.1.2 氣體輔助壓印成型技術 16 2.2 UV紫外光固化成型技術與潛在問題 17 2.2.1 UV微奈米壓印成型技術 17 2.2.2 UV微奈米壓印成型技術對殘留層問題的因應 19 2.3 滾輪式壓印技術與潛在問題 19 2.3.1 滾輪式壓印技術 19 2.3.2 滾輪式壓印技術的殘留層問題 20 2.4 降低殘留層轉印技術發展 21 2.4.1 刮刀刮除殘留層輔助轉印成型製程 22 2.4.2 微奈米接觸轉印技術 22 2.4.3 複合式模具壓印技術 22 2.4.4 毛細現象轉印技術 23 2.4.5 反轉式浮雕轉印技術 23 2.4.6 液態膠體轉印技術 24 2.4.7 滾輪式液態膠體轉印技術 25 2.5 文獻整體回顧與研究創新 26 第三章 實驗設置與實驗方法 46 3.1 實驗目標與整體流程規劃 46 3.2 微影與蝕刻製程製作模具之設備與流程 47 3.2.1 光罩對準曝光機 47 3.2.2 本實驗室自製曝光裝置 47 3.2.3 紫外光固化燈具 47 3.2.4 微影與蝕刻製程流程 47 3.3 氣體輔助壓印製程進行結構複製之設備與流程 49 3.3.1 氣體輔助轉印設備 49 3.3.2 氣體輔助軟模轉印流程 50 3.3.3 氣體輔助熱壓印機 50 3.3.4 氣體輔助熱壓印成型 51 3.4 PDMS模具的製作 53 3.4.1 PDMS膠體介紹 53 3.4.2 PDMS軟模具翻製流程 54 3.5 低殘留層製程之壓印膠體 55 3.6 量測設備 56 3.6.1 表面接觸角量測儀 56 3.6.2 光學顯微鏡 56 3.6.3 掃描式電子顯微鏡 56 3.6.4 雷射共軛焦顯微鏡 57 第四章 低殘留層加溫轉印製程之開發 71 4.1 本章實驗架構 71 4.2 轉印機制與表面能探討 71 4.2.1 表面黏著力與轉印機制之關係 71 4.2.2 轉印溫度對表面能之影響 72 4.2.3 表面能對轉印膠體的選擇 73 4.3 V型溝槽模具 74 4.3.1 簡介 74 4.3.2 V型溝槽軟性模具製作 74 4.4 氣體輔助轉印測試 74 4.4.1 膠體選用與初期假設 74 4.4.2 濕式轉印與乾式轉印製程 75 4.4.3 濕式轉印實驗測試 75 4.4.4 乾式轉印實驗測試 76 4.4.5 綜合探討濕式與乾式轉印製程 77 4.4.6 結合濕式與乾式轉印開發複合式轉印方式 77 4.5 V型溝槽的低殘留層結構轉印的假設與探討 77 4.5.1 製程原始假設 77 4.5.2 EPG-510旋塗厚度參數探討 78 4.5.3 轉印出之V型結構量測分析並重建假設 79 4.6 製程與翻印最佳參數測試探討 80 4.6.1 溫度對於此製程之成型性影響 80 4.6.2 壓力與膠體塗佈膜厚對於此製程之成型性影響 81 4.6.3 不同大小V型溝槽結構測試參數轉印成果 82 4.7 本章結論 82 第五章 低殘留層製程應用於陣列式金字塔型微結構成型 108 5.1 本章實驗目的 108 5.2 金字塔型母模具製作 108 5.2.1 乾式蝕刻與濕式蝕刻介紹 108 5.2.2 等向性與非等向性蝕刻介紹 109 5.2.3 微影與蝕刻製程製作金字塔型模具母模 110 5.3 金字塔型PDMS模具製作 111 5.3.1 氣體輔助熱壓印翻製PC模具 111 5.3.2 翻製PDMS軟性模具 113 5.4 金字塔型結構測試製程參數與探討 113 5.4.1 金字塔型結構加熱型濕式轉印實驗 113 5.4.2 重新探討壓印參數對陣列型結構成型性影響 114 5.4.3 小尺寸金字塔型結構測試壓印參數 115 5.5 本章結論 115 第六章 低殘留層製程應用於小尺寸微結構 131 6.1 本章實驗目的 131 6.2 模具使用結構介紹 131 6.2.1 圓錐結構:圖案化藍寶石基板 131 6.2.2 圓柱結構:矽晶圓 132 6.2.3 翻製PDMS軟性模具 133 6.3 成型與壓力之關係 133 6.3.1 壓力參數探討 133 6.3.2 增大壓力參數探討範圍並建立與殘留層高度關係表 134 6.3.3 圓柱結構壓印壓力與殘留層厚度之關係 134 6.4 本章結論 135 第七章 結論與未來研究方向 149 7.1 研究成果總結 149 7.2 未來展望 150 7.2.1 壓印參數深入探討 150 7.2.2 壓印基材的更換 151 7.2.3 機台改良與奈米壓印 151 參考文獻 152 | |
dc.language.iso | zh-TW | |
dc.title | 低殘留層加溫轉印製程開發與應用 | zh_TW |
dc.title | Development of Thermal Imprinting Process for Low Residual Layer and Applications | en |
dc.type | Thesis | |
dc.date.schoolyear | 103-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林宏彝(Hung-Yi Lin),張復瑜(Fuh-Yu Chang),蔡曜陽(Yao-Yang Tsai) | |
dc.subject.keyword | 微奈米壓印,殘留層,圖案化藍寶石基板, | zh_TW |
dc.subject.keyword | microimprinting,the residual layer,pattern sapphire substrate, | en |
dc.relation.page | 155 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-08-15 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
顯示於系所單位: | 機械工程學系 |
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