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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林浩雄(Hao-Hsiung Lin) | |
| dc.contributor.author | Ferry Wiryo Pranoto | en |
| dc.contributor.author | 黃于桓 | zh_TW |
| dc.date.accessioned | 2021-06-15T13:52:59Z | - |
| dc.date.available | 2020-12-01 | |
| dc.date.copyright | 2015-12-01 | |
| dc.date.issued | 2015 | |
| dc.date.submitted | 2015-09-14 | |
| dc.identifier.citation | [1] B. E. Foutz, S. K. O’Leary, M. S. Shur, and L. F. Eastman, 'Transient electron transport in wurtzite GaN, InN, and AlN,' Journal of Applied Physics, vol. 85, pp. 7727-7734, 1999.
[2] J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, et al., 'Unusual properties of the fundamental band gap of InN,' Applied Physics Letters, vol. 80, pp. 3967-3969, 2002. [3] V. Y. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, et al., 'Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap,' physica status solidi (b), vol. 229, pp. r1-r3, 2002. [4] I. Wilke, R. Ascazubi, H. Lu, and W. J. Schaff, 'Terahertz emission from silicon and magnesium doped indium nitride,' Applied Physics Letters, vol. 93, pp. 221113, 2008. [5] J.-S. Hwang, C.-H. Lee, F.-H. Yang, K.-H. Chen, L.-G. Hwa, Y.-J. Yang, et al., 'Resistive heated MOCVD deposition of InN films,' Materials Chemistry and Physics, vol. 72, pp. 290-295, 11/1/ 2001. [6] X. Wang and A. Yoshikawa, 'Molecular beam epitaxy growth of GaN, AlN and InN,' Progress in Crystal Growth and Characterization of Materials, vol. 48–49, pp. 42-103, // 2004. [7] P. Singh, P. Ruterana, M. Morales, F. Goubilleau, M. Wojdak, J. F. Carlin, et al., 'Structural and optical characterisation of InN layers grown by MOCVD,' Superlattices and Microstructures, vol. 36, pp. 537-545, 2004. [8] W.-C. Chen, S.-Y. Kuo, F.-I. Lai, W.-T. Lin, and C.-N. Hsiao, 'Effect of substrate temperature on structural and optical properties of InN epilayer grown on GaN template,' Thin Solid Films, vol. 529, pp. 169-172, 2013. [9] O. K. Semchinova, J. Aderhold, J. Graul, A. Filimonov, and H. Neff, 'Photoluminescence, depth profile, and lattice instability of hexagonal InN films,' Applied Physics Letters, vol. 83, pp. 5440-5442, 2003. [10] I. J. Lee, J. W. Kim, Y.-H. Hwang, and H.-K. Kim, 'Synchrotron x-ray scattering study of lattice relaxation in InN epitaxial layers on sapphire(0001) during dc sputter growth,' Journal of Applied Physics, vol. 92, pp. 5814-5818, 2002. [11] W. Paszkowicz, R. Černý, and S. Krukowski, 'Rietveld refinement for indium nitride in the 105–295 K range,' Powder Diffraction, vol. 18, pp. 114-121, 2003. [12] Y. L. Chung, X. Peng, Y. C. Liao, L. C. Chen, K. H. Chen, and Z. C. Feng, 'Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy,' Thin Solid Films, vol. 519, pp. 6778-6782, 2011. [13] M. A. Moram and M. E. Vickers, 'X-ray diffraction of III-nitrides,' Reports on Progress in Physics, vol. 72, pp. 036502, 2009. [14] G. Bunker, Introduction to XAFS. UK: Cambridge University Press, 2010. [15] I. J. Lee, J. W. Kim, T.-B. Hur, Y.-H. Hwang, and H.-K. Kim, 'Synchrotron x-ray scattering study on the evolution of surface morphology of the InN/Al2O3(0001) system,' Applied Physics Letters, vol. 81, pp. 475-477, 2002. [16] A. Zoroddu, F. Bernardini, P. Ruggerone, and V. Fiorentini, 'First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory,' Physical Review B, vol. 64, pp. 045208, 2001. [17] C. Stampfl and C. G. Van de Walle, 'Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation,' Physical Review B, vol. 59, pp. 5521-5535, 1999. [18] A. F. Wright and J. S. Nelson, 'Consistent structural properties for AlN, GaN, and InN,' Physical Review B, vol. 51, pp. 7866-7869, 1995. [19] K. Kim, W. R. L. Lambrecht, and B. Segall, 'Erratum: Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN ' Physical Review B, vol. 56, pp. 7018-7018, 1997. [20] C.-Y. Yeh, Z. W. Lu, S. Froyen, and A. Zunger, 'Zinc-blende wurtzite polytypism in semiconductors,' Physical Review B, vol. 46, pp. 10086-10097, 1992. [21] V. W. L. Chin, T. L. Tansley, and T. Osotchan, 'Electron mobilities in gallium, indium, and aluminum nitrides,' Journal of Applied Physics, vol. 75, pp. 7365-7372, 1994. [22] A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, 'Indium nitride (InN): A review on growth, characterization, and properties,' Journal of Applied Physics, vol. 94, pp. 2779-2808, 2003. [23] H. Lu, W. J. Schaff, J. Hwang, H. Wu, G. Koley, and L. F. Eastman, 'Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy,' Applied Physics Letters, vol. 79, pp. 1489-1491, 2001. [24] V. A. Vilkotskii, D. S. Domanevskii, R. D. Kakanakov, V. V. Krasovskii, and V. D. Tkachev, 'Burstein-Moss effect and near-band-edge luminescence spectrum of highly doped indium arsenide,' physica status solidi (b), vol. 91, pp. 71-81, 1979. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51845 | - |
| dc.description.abstract | 本論文的研究主題是量測與分析氮化銦(InN)纖鋅礦晶格結構的晶格常數a，c，鍵結常數 (bond length) ，c/a，以及internal parameter u (b/c)。我們先應用X光繞射求出晶格常數a，c。之後我們再用X光吸收譜來求出纖鋅礦晶格的原子距離(bond length)。我們選擇In K-edge量測分析EXAFS(extended X-ray absorption fine structure)，我們利用X光繞射求出來的晶格常數a，c當作EXAFS擬合的基本參數。
總合HR-XRD,EXAFS的結果,我們成功求出InN半導體的晶格參數a，c，銦-氮的建長，c/a，以及u。我們算出來的u擁有誤差小於10-3Å。 我們再利用photoluminescence量測氮化銦的發光波段.我們發現氮化銦的發光波段在於遠紅外(~ 0.7 eV).造成發光的機制是由導帶的電子躍遷到價帶上面的acceptor state。 | zh_TW |
| dc.description.abstract | This master thesis is about studying crystal structure properties of wurtzite structure Indium Nitride using high resolution X-ray diffraction spectroscopy (HR-XRD), and In k-edge Extended X-ray Absorption Fine Structure (EXAFS). The result of HR-XRD does not suffice in resolution since lattice constant results from two different planes differ around 0.13%. We then apply mathematical model to correct the value of the measured lattice constant. The mathematical corrected result of our lattice constant a is ~ 3.53154 to 3.53204 Å, lattice constant c is ~ 5.70437 to 5.70565 Å. Our corrected HR-XRD measurement result has error bar under 10-8 Å. Lattice constant a and c of our samples show significant trend in which whenever the crystal is expanded in basal plane (elongate lattice constant a), the crystal structure will contract in its height (shown in shortened of lattice constant c) and vice versa.
We then establish crystal model of wurtzite InN to fit the In k-edge of EXAFS data using the corrected HR-XRD lattice constants. Using combination data from both HR-XRD and EXAFS we could complete the structural measurement of wurtzite InN. We succeed in measuring 1st nearest neighbor (bonds length between In and N), 2nd nearest neighbor (In – In), with these parameters we could then derive wurtzite crystal structure c/a is 1.6152, and internal parameter u (b/c) is 0.3765. We successfully demonstrate the capability of EXAFS and HR-XRD to measure the internal parameter u with error around 10-3A. We notice that despite the lattice different around sample to sample, internal parameter u result shows stability indicating there exists a bonding force to keep the unit tetragonal cell intact by altering their bonding angle. Our study is continued with photoluminescence measurement of InN, with most sample has single peak at 0.68-0.7 eV that correspond to conduction band to acceptor transition. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T13:52:59Z (GMT). No. of bitstreams: 1 ntu-104-R02941103-1.pdf: 2232862 bytes, checksum: 07089bb5c8a2f5a7a44f67976a787d9f (MD5) Previous issue date: 2015 | en |
| dc.description.tableofcontents | 摘要 i
ABSTRACT ii TABLE OF CONTENT iv LIST OF FIGURES v CHAPTER 1: INTRODUCTION 1 1.1 Indium Nitride Introduction 1 1.2 Motivation 2 CHAPTER 2: EXPERIMENT PROCEDURE 4 2.1 Sample Growth 4 2.2 HR XRD (High Resolution X-ray Diffraction Spectroscopy) 4 2.2.1 HR-XRD Experiment Setup 5 2.2.2 Lattice Constant Measurement and Correction 8 2.3 XAS (X-ray Absorption Spectroscopy) 14 2.3.1 XAS Experimental Setup 15 2.3.2 Input X-ray Signal Calibration (Rocking Curve) 16 2.3.3 Absorption Edge Calibration 17 2.3.4 XAS Experiment Procedure 17 2.3.5 Data Processing 18 2.4 Photoluminescence Spectroscopy 23 2.5 Hall Effect and Van Der Pauw Measurement 25 CHAPTER 3: RESULT AND DISCUSSION 29 CHAPTER 4: CONCLUSION 48 REFFERENCE 50 | |
| dc.language.iso | en | |
| dc.subject | X光繞射 | zh_TW |
| dc.subject | 氮化銦 | zh_TW |
| dc.subject | 銦-氮建長 | zh_TW |
| dc.subject | 晶格常數a | zh_TW |
| dc.subject | EXAFS | zh_TW |
| dc.subject | b/c | zh_TW |
| dc.subject | EXAFS | en |
| dc.subject | bond length | en |
| dc.subject | wurtzite lattice constant a | en |
| dc.subject | internal parameter u | en |
| dc.subject | HR-XRD | en |
| dc.title | "應用X光繞射,延伸X光吸收細微結構及光致發光量測與分析纖鋅礦結構的氮化銦材料之晶格與電子特性" | zh_TW |
| dc.title | Measurement and Analysis of Structural, Electronics Properties of Wurtzite Indium Nitride using X-ray Diffraction, Extended X-ray Absorption Fine Structure and Photoluminescence | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 馮哲川(Zhe Chuan Feng),何清華(Ching-Hwa Ho) | |
| dc.subject.keyword | 氮化銦,X光繞射,EXAFS,晶格常數a,c,銦-氮建長,b/c, | zh_TW |
| dc.subject.keyword | HR-XRD,EXAFS,wurtzite lattice constant a,c,bond length,internal parameter u, | en |
| dc.relation.page | 51 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2015-09-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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