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標題: | 以嵌入奈米粒子改善五氧化二鉭電橋式記憶體之特性 Improvement of Ta2O5-Based Conductive Bridge Random Access Memory with Embedded Nanoparticles |
作者: | Szu-An Lu 盧思安 |
指導教授: | 李嗣涔(Si-Chen Lee) |
關鍵字: | 五氧化二鉭,銀奈米粒子,電橋式記憶體,電阻式記憶體,射頻磁控濺鍍, tantalum pentoxide (Ta2O5),silver nanoparticles,conductive bridge random access memory (CBRAM),resistive random access memory (RRAM),RF magnetron sputtering, |
出版年 : | 2016 |
學位: | 碩士 |
摘要: | 現有記憶體科技將難以滿足未來對於高效能記憶體的需求,在多種發展中的次世代記憶體中,電橋式記憶體擁有達成未來需求的潛力。其作為一種電阻式記憶體,在各式不同的材料組合之中,Ag/Ta2O5/Pt擁有低操作電壓(<0.3 V)、低功耗(<20 μJ 每次寫入-抹除)以及高開關比(10^7)。為了進一步改善其在耐久性和均勻性上的問題,利用直接沉積而非熱退火生成的方法,在Ta2O5記憶層中嵌入一層銀奈米粒子。改善後,寫入電壓能夠降低37%、其標準差也降低了42%、耐久性更提升了100%以上。研究在Ta2O5中嵌入奈米粒子的電橋式記憶體,發現這樣的記憶體有良好的記憶體特性,以及可供未來繼續發展的潛力。 Conductive bridge random access memory (CBRAM), as a kind of resistive random access memory (RRAM), is one of the promising emerging memory technologies to meet the challenges of developing the next-generation high performance semiconductor memory. Among many material combinations, Ag/Ta2O5/Pt has the advantages of low operation voltage (<0.3 V), low power consumption (<20 μJ per cycle), and large on-off ratio (10^7). To improve the endurance and the uniformity issues, the Ag nanoparticles, fabricated by one-step annealing-free deposition, were embedded in the Ta2O5 memory layers. The SET voltage and its standard deviation were reduced by 37% and 42% respectively, and the endurance was increased at least 100%. The nanoparticle-embedded Ta2O5 CBRAM devices were proposed and studied, which have the promising memory characteristics and the potential for the further researches. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51438 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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