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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林唯芳(Wei-Fang Su) | |
| dc.contributor.author | Shuang-Yuan Chang | en |
| dc.contributor.author | 張瀧元 | zh_TW |
| dc.date.accessioned | 2021-06-15T13:27:36Z | - |
| dc.date.available | 2021-03-08 | |
| dc.date.copyright | 2016-03-08 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-02-15 | |
| dc.identifier.citation | [1] T. Ameri, N. Lia, C. J. Brabec, “Highly efficient organic tandem solar cells: a follow up review”, Energy Environ. Sci. 6 (2013) 2390.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51212 | - |
| dc.description.abstract | P3HT:ICBA有機高分子太陽能電池由於效率高、穩定性佳且單體結構簡單，故已被廣泛的研究。而有機-無機鈣鈦礦材料由於具有雙極特性，在經光照射後，此材料能自行產生電壓，故本研究結合了P3HT:ICBA與鈣鈦礦系統，藉由導入鈣鈦礦高驅動電壓材以提升P3HT:ICBA太陽能電池的電壓表現。在此修飾型元件中，我們採用全無退火的中間層、鈣鈦礦前驅物與用以輔助鈣鈦礦的電洞傳導層製程。目的除了能減少製程的耗能與成本，還能增加主動層材料的選擇性。結果顯示中間層採用3nm MoO3/ZnO的鈣鈦礦修飾P3HT:ICBA太陽能電池與電洞傳導層採用3nm MoO3的P3HT:ICBA太陽能電池標準片做比較，開路電壓由0.86V 提升至1.60V；效率由3.34%提升4.35%。此外，在超過210天(5,040小時)的儲放下，與第一天的量測結果相比，修飾型元件僅衰減3%。而修飾型元件的開路電壓表現仍然可以維持在1.55V以上的水準，這項紀錄相當有價值，因為正常來說市售電器須在電壓為1.50V時的情況被驅動。
另一方面，為了簡化製作流程，我們將鈣鈦礦修飾層前後的電子與電洞傳導材移除，發現中間層採用11nm MoO3的鈣鈦礦修飾P3HT:ICBA太陽能電池較電洞傳導層採用11nm MoO3的P3HT:ICBA太陽能電池標準片，電壓由0.82V 提升至1.28V，效率由3.03%提升至3.40%，驗證了單層鈣鈦礦材料也可以做為太陽能電池的高驅動電壓材。 最後，我們證實在實際的應用上，不管是在一顆太陽光或弱光下，修飾型元件都能提供足夠的電壓輸出並成功驅動市售電器。 | zh_TW |
| dc.description.abstract | P3HT:ICBA polymer solar cell system has been extensively investigated in recent year due to its high efficiency, high stability and the ease of synthesis. On the other hand, organic-inorganic hybrid perovskites have the ambipolar property, which can produce voltage by themselves under light irradiation. In this work, we combine the P3HT:ICBA and perovskite system by introducing perovskite as high voltage driver into P3HT:ICBA solar cells to enhance their voltage performance. In order to reduce the energy consumption and increase more extensive choices of materials in active layers, we develop the whole non-annealing fabrication process, the interconnecting layers, perovskite layer and hole transport layer of perovskite are process without annealing. Compared with the standard P3HT:ICBA solar cell, the CH3NH3PbI3-modified P3HT:ICBA solar cell with 3nm MoO3/ZnO interconnecting layers show significant enhancement in open circuit voltage (Voc) and power conversion efficiency (PCE), increase from 0.86V to 1.60V and 3.34% to 4.35%, respectively. Under more than 210 days (5,040 hours) storage, compared 210th with 1st day measuring Voc results of the CH3NH3PbI3-modified P3HT:ICBA solar cell with 3nm MoO3/ZnO decays within 3%. Besides, the Voc of the modified solar cell can still maintain above 1.55V, which is valuable record because normally the commercial appliances need to be driven above 1.50V.
To simplify the manufacturing process, we also try to remove the electron and hole transport layers of perovskite. Compared with the standard P3HT:ICBA solar cell, the CH3NH3PbI3-modified P3HT:ICBA solar cell with 11nm MoO3 interconnecting layer exhibits great improvement in Voc and PCE, raise from 0.82V to 1.28V and 3.03% to 3.40%, respectively. It proves that single perovskite layer can be the high voltage driver of P3HT:ICBA solar cells. Finally, for the practical application, we successfully prove that our modified solar cells can provide enough voltage output to drive commercial appliances no matter under one sun or dim light irradiation. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T13:27:36Z (GMT). No. of bitstreams: 1 ntu-105-R01527033-1.pdf: 2811062 bytes, checksum: 48fb17b6baa08235cb28dbf89328c550 (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 摘要 I
Abstract II 目錄 IV 圖目錄 VI 表目錄 X 第一章：前言 1 1.1 太陽能電池的近況發展 1 1.2 太陽能電池效率的評估及相關參數意義 2 1.2.1 開路電壓 (open circuit voltage, Voc) 2 1.2.2 短路電流 (short circuit current, Isc) 3 1.2.3 填充因子 (fill factor) 4 1.2.4 I-V曲線 5 1.2.5 光電轉換效率 (power conversion efficiency) 6 1.3 高分子太陽能電池的工作原理與近期元件表現 6 1.3.1 高分子太陽能電池的工作原理 7 1.3.2 高分子太陽能電池的近期元件光電轉換效率表現 9 1.4 鈣鈦礦太陽能電池的工作原理與近期元件表現 13 1.5 串疊型太陽能電池 20 1.5.1 串聯的等效電路意義 20 1.5.2 高分子串疊型太陽能電池近期元件表現 21 1.6 修飾型太陽能電池近期元件表現 26 1.7 研究動機及目標 31 第二章：實驗方法 32 2.1 化學物質列表 32 2.2 儀器與測量方法 34 2.3 材料的合成與製備 35 2.3.1甲基碘化胺(MAI) 35 2.3.2 ZnO奈米粒子溶液 35 2.3.3 P3HT:ICBA溶液 36 2.3.4 PbI2與MAI的前驅物溶液 36 2.3.5 Spiro-OMeTAD溶液 37 2.4 CH3NH3PbI3修飾的高分子太陽能電池其製備程序 37 第三章：結果與討論 40 3.1 以PEDOT:PSS(AI 4083)與ZnO作為中間層的修飾型太陽能電池 41 3.1.1 未經修飾高分子太陽能電池的元件表現 41 3.1.2 修飾型太陽能電池的元件表現 43 3.1.3 穩定性測試 44 3.2 以PEDOT:PSS(CPP)與ZnO作為中間層的修飾型太陽能電池 46 3.2.1 未修飾高分子太陽能電池的元件表現 47 3.2.2 修飾型太陽能電池的元件表現 48 3.2.3 穩定性測試 50 3.3 以MoO3與ZnO作為中間層的修飾型太陽能電池 52 3.3.1 未修飾高分子太陽能電池的元件表現 53 3.3.2 修飾型太陽能電池的元件表現 54 3.3.3 外部量子效率量測 (EQE) 55 3.3.4 穩定性測試 56 3.3.5 應用示範 58 3.4 無電子與電洞傳導層輔助CH3NH3PbI3的修飾型太陽能電池 60 3.4.1 修飾型太陽能電池的元件表現 60 第四章：結論與建議 64 4.1 結論 64 4.2 建議 66 第五章：參考文獻 67 | |
| dc.language.iso | zh-TW | |
| dc.subject | 鈣鈦礦 | zh_TW |
| dc.subject | 高驅動電壓 | zh_TW |
| dc.subject | 太陽能電池 | zh_TW |
| dc.subject | 中間層 | zh_TW |
| dc.subject | interconnecting layers | en |
| dc.subject | perovskite | en |
| dc.subject | high voltage driver | en |
| dc.subject | modified solar cells | en |
| dc.subject | interconnecting layers | en |
| dc.subject | perovskite | en |
| dc.subject | high voltage driver | en |
| dc.subject | modified solar cells | en |
| dc.title | CH3NH3PbI3高驅動電壓材修飾P3HT:ICBA太陽能電池的製作與應用 | zh_TW |
| dc.title | Fabrication and Application of CH3NH3PbI3-Modified P3HT:ICBA High Voltage Solar Cells | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王立義(Lee-Yih Wang),林清富(Ching-Fuh Lin),吳明忠(Ming-Chung Wu) | |
| dc.subject.keyword | 鈣鈦礦,高驅動電壓,太陽能電池,中間層, | zh_TW |
| dc.subject.keyword | perovskite,high voltage driver,modified solar cells,interconnecting layers, | en |
| dc.relation.page | 80 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2016-02-15 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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