請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49965完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 高振宏(C-Robert Kao) | |
| dc.contributor.author | Yu-Shan Chiu | en |
| dc.contributor.author | 邱于珊 | zh_TW |
| dc.date.accessioned | 2021-06-15T12:26:54Z | - |
| dc.date.available | 2020-08-21 | |
| dc.date.copyright | 2020-08-21 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-08-12 | |
| dc.identifier.citation | [1] D. P. Seraphim, R. C. Lasky, and C.-Y. Li, Principles of electronic packaging. McGraw-Hill College, 1989. [2] Lau, John H. 'Evolution, challenge, and outlook of TSV, 3D IC integration and 3D silicon integration.' 2011 international symposium on advanced packaging materials (APM). IEEE, 2011. [3] K. Banerjee, S. J. Souri, P. Kapur, and K. C. Saraswat, “3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration,” Proc. IEEE, vol. 89, no. 5, pp. 602–633, 2001. [4] “Solders-Technology-Roadmap-2015.pdf.” . [5] M. Z ou, Y. Ma, X. Yuan, Y. Hu, J. Liu, and Z. Jin, “Flexible devices: from materials, architectures to applications,” J. Semicond., vol. 39, no. 1, p. 011010, Jan. 2018. [6] K. T. Eng, W. J. HETZEL, W. J. REISS, F. Ammer, Y. C. KOH, and S. Jimmy, “Copper on organic solderability preservative (osp) interconnect,” Jan-2009. [7] Kotadia, Hiren R., Philip D. Howes, and Samjid H. Mannan. 'A review: On the development of low melting temperature Pb-free solders.' Microelectronics Reliability 54.6-7 (2014): 1253-1273 [8] W. K. Choi et al., “Development of novel intermetallic joints using thin film indium based solder by low temperature bonding technology for 3D IC stacking,” Proc. - Electron. Compon. Technol. Conf., pp. 333–338, 2009. [9] C. T. Ko and K. N. Chen, “Wafer-level bonding/stacking technology for 3D integration,” Microelectron. Reliab., vol. 50, no. 4, pp. 481–488, 2010. [10] M. Abtew and G. Selvaduray, “Lead-free Solders in Microelectronics,” Mater. Sci. Eng. R Rep., vol. 27, no. 5, pp. 95–141, 2000. [11] J. U. Knickerbocker et al., “2.5 D and 3D technology challenges and test vehicle demonstrations,” in Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd, 2012, pp. 1068–1076. [12] B. Banijamali, R. Chaware, S. Ramalingam, and M. Kim, “Quality and reliability of 3d tsv interposer and fine pitch solder micro-bumps for 28nm technology,” in International Symposium on Microelectronics, 2011, vol. 2011, pp. 000189–000192. [13] R. Chaware, K. Nagarajan, and S. Ramalingam, “Assembly and reliability challenges in 3D integration of 28nm FPGA die on a large high density 65nm passive interposer,” in Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd, 2012, pp. 279–283. [14] Munding, A., et al. 'Cu/Sn solid–liquid interdiffusion bonding.' Wafer Level 3-D ICs Process Technology. Springer, Boston, MA, 2008. 1-39. [15] Ramm, Peter, James Jian-Qiang Lu, and Maaike MV Taklo, eds. Handbook of wafer bonding. John Wiley Sons, 2011. [16] Munding , A. et al. ( 2008 ) Cu/Sn solid – liquid interdiffusion bonding , in. Wafer Level 3 - D ICs Process Technology (eds C.S. Tan , R.J. Gutmann , and L.R. Reif ), Springer Science , New York , pp. 131 – 170 . [17] Lee , C.C. et al. ( 2009 ) Advanced bonding/ joining techniques , in Materials for Advanced Packaging (eds D. Lu and C.P. Wong ), Springer Science , New York , pp. 51 – 76 [18] Hoivik , N. et al. ( 2010 ) Fluxless wafer - level Cu – Sn bonding for micro - and nanosystems packaging . 3rd Electronic System - Integration Technology Conference (ESTC) . [19] Coombes, C. J. 'The melting of small particles of lead and indium.' Journal of. Physics F: Metal Physics 2.3 (1972): 441. [20] Shimizu, Kozo, et al. 'Solder joint reliability of indium-alloy interconnection.' Journal of electronic materials 24.1 (1995): 39-45 [21] Lee, Jong-Bum, How-Yuan Hwang, and Min-Woo Rhee. 'Reliability Investigation of Cu/In TLP Bonding.' Journal of Electronic Materials44.1 (2015): 435-441. [22] Jacobson, David M., and Giles Humpston. 'Gold coatings for fluxless. soldering.' Gold Bulletin 22.1 (1989): 9-18. [23] Manko, Howard H. Solders and soldering. McGraw-Hill Professional. Publishing, 2001. [24] Chen, Yi-Chia, and Chin C. Lee. 'Indium-copper multilayer composites for fluxless oxidation-free bonding.' Thin Solid Films 283.1-2 (1996): 243-246. [25] Lee, Chin C., and Selah Choe. 'Fluxless In Sn bonding process at 140° C.' Materials Science and Engineering: A 333.1-2 (2002): 45-50 [26] Chen, Y-C., William W. So, and Chin C. Lee. 'A fluxless bonding technology using indium-silver multilayer composites.' IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 20.1 (1997): 46-51. [27] Lasky, J. B. 'Wafer bonding for silicon‐on‐insulator technologies.' Applied Physics. Letters 48.1 (1986): 78-80. [28] Hunt, Charles E., et al. 'Direct bonding of micromachined silicon wafers for laser diode heat exchanger applications.' Journal of Micromechanics and Microengineering 1.3 (1991): 152. [29] Kissinger, Gudrun, and Wolfgang Kissinger. 'Void-free silicon-wafer-bond strengthening in the 200–400 C range.' Sensors and Actuators A: Physical 36.2 (1993): 149-156. [30] He, Ran, and Tadatomo Suga. 'Effects of Ar plasma and Ar fast atom bombardment (FAB) treatments on Cu/polymer hybrid surface for wafer bonding.' 2014 International Conference on Electronics Packaging (ICEP). IEEE, 2014. [31] Franks, J. 'FAB: the fast atomic beam source.' International Journal of Mass. Spectrometry and Ion Physics 46 (1983): 343-346. [32] Shigetou, Akitsu, T. Itoh, and T. Suga. 'Direct bonding of CMP-Cu films by surface activated bonding (SAB) method.' Journal of materials science 40.12 (2005): 3149-3154. [33] Takagi, Hideki, et al. 'Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation.' Japanese journal of applied physics 37.7R (1998): 4197. [34] Derendorf, Karen, et al. 'Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding.' IEEE Journal of Photovoltaics 3.4 (2013): 1423-1428. [35] Shigetou, Akitsu, et al. 'Bumpless interconnect through ultrafine Cu electrodes by means of surface-activated bonding (SAB) method.' IEEE transactions on advanced packaging 29.2 (2006): 218-226. [36] Shigetou, Akitsu, T. Itoh, and T. Suga. 'Direct bonding of CMP-Cu films by surface activated bonding (SAB) method.' Journal of materials science 40.12 (2005): 3149-3154. [37] Truica‐Marasescu, Florina‐Elena, and Michael R. Wertheimer. 'Vacuum ultraviolet photolysis of hydrocarbon polymers.' Macromolecular Chemistry and Physics 206.7 (2005): 744-757. [38] Shinohara, Hidetoshi, Jun Mizuno, and Shuichi Shoji. 'Studies on low-temperature direct bonding of VUV, VUV/O3 and O2 plasma pretreated cyclo-olefin polymer.' Sensors and Actuators A: Physical 165.1 (2011): 124-131. [39] Shinohara, Hidetoshi, et al. 'Polymer microchip integrated with nano-electrospray tip for electrophoresis–mass spectrometry.' Sensors and Actuators B: Chemical 132.2 (2008): 368-373. [40] Shigetou, Akitsu, Mano Ajayan, and Jun Mizuno. 'VUV-assisted low temperature bonding for organic/inorganic hybrid integration at atmospheric pressure.' 2013 3rd IEEE CPMT Symposium Japan. IEEE, 2013. [41] Mano, Ajayan, et al. 'Room-temperature direct bonding of graphene films by. means of vacuum ultraviolet (VUV)/vapor-assisted method.' 2014 International Conference on Electronics Packaging (ICEP). IEEE, 2014. [42] Unami, N., et al. 'Investigations of fluxless flip-chip bonding using vacuum. ultraviolet and formic acid vapor surface treatment.' 2011 International Symposium on Advanced Packaging Materials (APM). IEEE, 2011. [43] Fu, Weixin, et al. 'Low Temperature Bonding between Polyether Ether Ketone (PEEK) and Pt through Vapor Assisted VUV Surface Modification.' 2016 IEEE 66th Electronic Components and Technology Conference (ECTC). IEEE, 2016. [44] Chen, Kuan-Neng, and Chuan Seng Tan. 'Integration schemes and enabling. technologies for three-dimensional integrated circuits.' IET Computers Digital Techniques 5.3 (2011): 160-168. [45] Liu, Dapeng, and Seungbae Park. 'Three-dimensional and 2.5 dimensional. interconnection technology: state of the art.' Journal of Electronic Packaging 136.1 (2014): 014001. [46] Benabou, Lahouari, Victor Etgens, and Quang Bang Tao. 'Finite element analysis of the effect of process-induced voids on the fatigue lifetime of a lead-free solder joint under thermal cycling.' Microelectronics Reliability 65 (2016): 243-254. [47] Liu, H., et al. 'Intermetallic compound formation mechanisms for Cu-Sn solid–liquid interdiffusion bonding.' Journal of electronic materials 41.9 (2012): 2453-2462. [48] Liu, He, et al. 'Wafer-level Cu/Sn to Cu/Sn SLID-bonded interconnects with increased strength.' IEEE Transactions on Components, Packaging and Manufacturing Technology 1.9 (2011): 1350-1358. [49] Bernstein, Leonard. 'Semiconductor Joining by the Solid‐Liquid‐Interdiffusion. (SLID) Process I. The Systems Ag‐In, Au‐In, and Cu‐In.' Journal of the Electrochemical Society 113.12 (1966): 1282-1288. [50] Lee, Jong-Bum, How-Yuan Hwang, and Min-Woo Rhee. 'Reliability investigation of Cu/In TLP bonding.' Journal of Electronic Materials 44.1 (2015): 435-441. [51] Shimizu, Kozo, et al. 'Solder joint reliability of indium-alloy. interconnection.' Journal of electronic materials 24.1 (1995): 39-45 [52] C.R. Kao, Mater. Sci. Eng. A238(1997): 196. [53] Tian, Yanhong, et al. 'Phase transformation and fracture behavior of Cu/In/Cu joints formed by solid–liquid interdiffusion bonding.' Journal of Materials Science: Materials in Electronics 25.9 (2014): 4170-4178. [54] Panchenko, Iuliana, et al. 'Characterization of low temperature Cu/In bonding for. fine-pitch interconnects in three-dimensional integration.' Japanese Journal of Applied Physics 57.2S1 (2017): 02BC05. [55] Lin, Shih-kang, Yu-hsiang Wang, and Hui-chin Kuo. 'Strong coupling effects during. Cu/In/Ni interfacial reactions at 280° C.' Intermetallics 58 (2015): 91-97. [56] Bolcavage, A., et al. 'Phase equilibria of the cu-in system I: Experimental. investigation.' Journal of Phase Equilibria 14.1 (1993): 14-21. [57] Kawakatsu, Ichiro, and Tadashi Osawa. 'Wettability of Liquid Tin on Solid. Copper.' Transactions of the Japan Institute of Metals 14.2 (1973): 114-119. [58] Yang, Ping-Feng, et al. 'Nanoindentation identifications of mechanical. properties. of Cu6Sn5, Cu3Sn, and Ni3Sn4 intermetallic compounds derived by diffusion couples.' Materials Science and Engineering: A 485.1-2 (2008): 305-310. [59] Naoto Ozawa et al., “Observation and analysis of metal oxide reduction by formic acid for soldering, ” International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2016, pp. 148 – 151. [9]. [60] Siliang He et al., “Effect of substrate metallization on the impact strength of Sn-Ag-Cu solder bumps fabricated in a formic acid atmosphere,” International Conference on Electronics Packaging (ICEP), 2017, pp. 381 – 385 [61] Wang, Jinlin. 'The effect of flux residue and substrate wettability on underfill flow process in flip chip packages.' 56th Electronic Components and Technology Conference 2006. IEEE, 2006. [62] Lee, Chin C., Chen Y. Wang, and Goran Matijasevic. 'Au-In bonding below the eutectic temperature.' IEEE Transactions on components, hybrids, and manufacturing technology 16.3 (1993): 311-316 [63] Chiu, Yu Shan, and C. Robert Kao. 'Microstructure Evolution of Cu/In/Cu Joints After Solid-Liquid Interdiffusion.' 2018 IEEE 68th Electronic Components and Technology Conference (ECTC). IEEE, 2018. [64] Chiu, Y.S., et al. 'Phase formation and microstructure evolution in Cu/In/Cu joints.' Microelectronics Reliability 95 (2019): 18-27. [65] Tian, Y., Hang, C., Zhao, X., Liu, B., Wang, N., Wang, C. 'Phase transformation and fracture behavior of Cu/In/Cu joints formed by solid–liquid interdiffusion bonding. ' Journal of Materials Science: Materials in Electronics, 25.9 (2014): 4170-4178. [66] Shimizu, K., Nakanishi, T., Karasawa, K., Hashimoto, K., Niwa, K. 'Solder joint reliability of indium-alloy interconnection. ' Journal of Electronic Materials, 24.1 (1995): 39-45. [67] Lee, Jong-Bum, How-Yuan Hwang, and Min-Woo Rhee. ' .' Journal of Electronic Materials 44.1 (2015): 435-441. [68] Chen, Yi-Chia, and Chin C. Lee. 'Indium-copper multilayer composites for fluxless oxidation-free bonding.' Thin Solid Films283.1-2 (1996): 243-246 [69] Lee, Chin C., and Selah Choe. 'Fluxless In Sn bonding process at 140° C.' Materials Science and Engineering: A 333.1-2 (2002): 45-50. [70] Benabou, Lahouari, Victor Etgens, and Quang Bang Tao. 'Finite element analysis of the effect of process-induced voids on the fatigue lifetime of a lead-free solder joint under thermal cycling.' Microelectronics Reliability 65 (2016): 243-254 [71] He, Siliang, et al. 'In-situ observation of fluxless soldering of Sn-3.0 Ag-0.5 Cu/Cu under a formic acid atmosphere.' Materials Chemistry and Physics (2019): 122309. [72] Shigetou, Akitsu, and Tadatomo Suga. 'Modified diffusion bonding of chemical mechanical polishing Cu at 150 C at ambient pressure.' Applied physics express 2.5 (2009): 056501. [73] Shigetou, Akitsu, Mano Ajayan, and Jun Mizuno. 'VUV-assisted low temperature bonding for organic/inorganic hybrid integration at atmospheric pressure.' 2013 3rd IEEE CPMT Symposium Japan. IEEE, 2013 [74] Shigetou, Akitsu, Jun Mizuno, and Shuichi Shoji. 'Vacuum ultraviolet (VUV) and. vapor-combined surface modification for hybrid bonding of SiC, GaN, and Si substrates at low temperature and atmospheric pressure.' 2015 IEEE 65th Electronic Components and Technology Conference (ECTC). IEEE, 2015 [75] Yang, Tilo H., C. Robert Kao, and Akitsu Shigetou. 'Organic-Inorganic Solid-State Hybridization with High-Strength and Anti-Hydrolysis Interface.' Scientific reports 9.1 (2019): 504. [76] Ishida, T., H. Kobayashi, and Y. Nakato. 'Structures and properties of electron‐beam‐evaporated indium tin oxide films as studied by X‐ray photoelectron spectroscopy and work‐function measurements.' Journal of applied physics 73.9 (1993): 4344-4350. [77] Chockalingam, Muthukumar, et al. 'Importance of the indium tin oxide substrate on the quality of self-assembled monolayers formed from organophosphonic acids.' Langmuir 27.6 (2011): 2545-2552 [78] Powell, Cedric J., and Aleksander Jablonski. 'The NIST electron effective-attenuation-length database.' Journal of Surface Analysis 9.3 (2002): 322-325. [79] Lei, Fengcai, et al. 'Oxygen vacancies confined in ultrathin indium oxide porous sheets for promoted visible-light water splitting.' Journal of the American Chemical Society 136.19 (2014): 6826-6829. [80] Kim, J. S., et al. 'X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films.' Chemical Physics Letters315.5-6 (1999): 307-312. [81] Donley, Carrie, et al. 'Characterization of Indium− Tin oxide interfaces using X-ray photoelectron spectroscopy and redox processes of a chemisorbed probe molecule: effect of surface pretreatment conditions.' Langmuir 18.2 (2002): 450-457. [82] Okhrimenko, Larysa, et al. 'Thermodynamic study of MgSO4–H2O system dehydration at low pressure in view of heat storage.' Thermochimica acta 656 (2017): 135-143. [83] Van Essen, V. M., et al. 'Characterization of MgSO4 hydrate for thermochemical seasonal heat. storage.' Journal of solar energy engineering 131.4 (2009): 041014. [84] Nylund, Anders, and Ingemar Olefjord. 'Surface analysis of oxidized aluminium. 1. Hydration of. Al2O3 and decomposition of Al (OH) 3 in a vacuum as studied by ESCA.' Surface and Interface Analysis 21.5 (1994): 283-289. [85] Moon, Sung Hwan, et al. 'The effect of the dehydration of MgO films on their XPS spectra and electrical properties.' Journal of The Electrochemical Society 154.12 (2007): J408-J412. [86] Biesinger, Mark C., et al. 'Resolving surface chemical states in XPS analysis of first row transition. metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn.' Applied surface science 257.3 (2010): 887-898. [87] Skinner, William M., Clive A. Prestidge, and Roger St C. Smart. 'Irradiation effects during XPS studies of Cu (II) activation of zinc sulphide.' Surface and interface analysis 24.9 (1996): 620-626. [88] Gao, Runhua, et al. 'Effect of Substrates on Fracture Mechanism and Process Optimization of Oxidation–Reduction Bonding with Copper Microparticles.' Journal of Electronic Materials 48.4 (2019): 2263-2271. [89] Novak, P. 'CuO cathode in lithium cells—II. Reduction mechanism of CuO.' Electrochimica acta 30.12 (1985): 1687-1692. [90] Mahajan, S., et al. 'Formation of annealing twins in fcc crystals.' Acta materialia 45.6 (1997): 2633-2638. [91] Wang, J., et al. 'Dislocation structures of Σ 3 {112} twin boundaries in face centered cubic. metals.' Applied Physics Letters 95.2 (2009): 021908. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49965 | - |
| dc.description.abstract | 未來的電子設備封裝趨勢需應用到各式材料進行封裝，因而工業中需要兼容性高且具有成本效益的接合介質。綜合以上需求，焊料被視為最簡易的接合介質。近年來，半導體產業偏好低溫接合技術，以避免殘餘熱應力導致基板產生熱損傷。因此，銦焊料憑藉著優秀的機械性能以及在高溫存儲下的高性能表現， 而被視為極有潛力的低溫焊點材料。本研究中通過固液擴散接合（SLID）探索了銅銦介金屬結構對可靠性的影響，並通過氬原子快速原子撞擊法（Ar-FAB）和水蒸氣氛中真空紫外光照射（V-VUV）的直接接合方式形成了理想的銅銦界面，該接合過程均在低溫下進行（室溫附近：低於50°C）。 經由固液擴散接合後銅銦的微觀結構，與Cu2In和Cu7In3相比，Cu11In9的形成最為快速。然而，在高溫時效後Cu11In9、Cu2In、Cu7In3，因而引起體積收縮。因此，為減少體積收縮所產生的孔洞，多階段的相變化應被避免。此外，從背向散射電子繞射分析中，Cu11In9沒有特定的晶粒排列方向，因而不同方向的機械性質得已表現出相似的特性。在本研究的下一階段中，我們通過直接接合（氬原子快速原子撞擊法和水蒸氣氛中真空紫外光照射），並在低溫時效後形成單一的Cu11In9介金屬相。 透過氬原子快速原子撞擊法和水蒸氣氛中真空紫外光照射，本研究創造了不需焊料的銅銦鎳系統且接合溫度接近室溫的接合方式。從掃描式電子顯微鏡圖像及高解析穿透式電子顯微鏡圖像中，發現在原子級別上銅銦界面緊密接合且沒有裂縫。 CuIn和CuIn2的形成證明了在氬原子快速原子撞擊法和水蒸氣氛中真空紫外光照射接合過程後，銅銦原子間產生了相互擴散的現象。其中，介金屬中的銅原子濃度百分比與擴散速率有關，而擴散速率則受氬原子快速原子撞擊法和水蒸氣氛中真空紫外光照射的接合原理影響。在150°C下時效500 小時後，銅銦介金屬轉變為Cu11In9，其剪切強度高於經由固液擴散接合後產生的銅銦介金屬。本研究結果證明氬原子快速原子撞擊法和水蒸氣氛中真空紫外光照射兩種直接接合方法均能形成緊密的銅銦界面且有良好的機械性質。 | zh_TW |
| dc.description.abstract | For future electronic device packaging, application-oriented assembly of multiple materials is unavoidable. A compatible, compliant, and cost-effective bonding medium is needed for use in conventional industry. Therefore, solder has been regarded as a simple solution. Recently, low temperature bonding to avoid residual thermal stress and thermal damages was advocated widely in the semiconductor industries. Among the low melting temperature solder, indium solder is thought to be one of the promising candidates due to the better mechanical properties as well as the performance under high temperature storage. In this study, we explore the Cu-In IMC structure influence on reliability through solid liquid interdiffusion(SLID) first and create an ideal Cu-In interface through direct bonding such as Ar fast atom beam (Ar-FAB) and vapor-assisted vacuum ultraviolet (V-VUV), which was fluxless and low temperature bonding process (near room temperature: lower than 50 °C). The microstructure evolution of Cu/In after SLID shows that the formation of Cu11In9 is the fastest compared with Cu2In and Cu7In3. However, Cu11In, Cu2In, Cu7In3 existed simultaneously after aging, which induced the volume shrinkage. Therefore, it’s better to form Cu11In9 individually after aging reaction. In addition, the EBSD analysis shows that the mechanical properties of Cu11In9 should exhibit similar behaviors along different directions. Therefore, we created this ideal phase with direct bonding such as FAB and V-VUV in the next step. Using FAB and V-VUV, we created a bonding process without flux and at a very low bonding temperature for Cu/In/Ni system. From SEM images and high-resolution TEM images, the Cu/In interface was found to be adhered atomically. The formation of CuIn and CuIn2 proved that interdiffusion occurs among Cu/In atoms after FAB and V-VUV bonding process, respectively. The atomic concentration percentage of Cu in IMCs is related to the interdiffusion rate, which is based on the difference of bonding mechanism of V-VUV/FAB. After aging at 150 °C for 500 h, Cu-In IMCs transformed into Cu11In9 and the shear strength was higher than the samples bonded through SLID. The results proved that both methods created tight voidless bond interfaces of Cu-In surface. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T12:26:54Z (GMT). No. of bitstreams: 1 U0001-1108202017554700.pdf: 46807753 bytes, checksum: bc6c1e85977bbf7fe3268cf2ca8bb156 (MD5) Previous issue date: 2020 | en |
| dc.description.tableofcontents | 口試委員會審定書 i 致谢 ii 中文摘要 iii Abstract v Contents vii List of figures xiv List of tables xxii Chapter 1 Research Background 1 1.1 Electronic Packaging 1 1.1.1 Three Dimensional Intergrated Circuit (3D IC) 1 1.2 Solder interconnection in electronic packaging 4 1.2.1 Solder interconnects 4 1.2.2 Low-temperature solder materials 5 1.3 Solid liquid interdiffusion of Cu-In system (SLID) 10 1.3.1 SLID 10 1.3.2 Cu-In bonding system 13 1.4 Fluxless bonding process through fast atom bombardment (FAB) / vapor-assisted vacuum ultraviolet (VVUV) 19 1.4.1 Flux and fluxless bonding 19 1.4.2 Fast atom bombardment (FAB) 21 1.4.3 Vapor-assisted vacuum ultraviolet (VVUV) 25 1.5 Research motivations 30 1.5.1 Current state of Cu-In system study 30 1.5.2 Purpose and scope of this study 31 Chapter 2 Microstructure Evolution and Kinetic Analysis of Cu/In/Cu Joints by Solid-Liquid Interdiffusion 33 2.1 Introduction 33 2.2 Experimental 36 2.3 Results 39 2.3.1 Microstructure evolution of Cu/In/Cu joints after bonding at 180. °C 39 2.3.2 Microstructure evolution of Cu/In/Cu joints after aging 43 2.3.3 The activation energies of Cu-In IMCs 50 2.3.4 The phenomenon of Cu-In system after aging 53 2.3.4.1 The formation of Cu2In layer after approaching to voids 53 2.3.4.2 The wavy edge on the Cu/IMCs interface 57 2.3.5 Mechanical properties of Cu/In/Cu IMCs 59 2.3.5.1 EBSD analysis of Cu11In9 59 2.3.5.2 Nanoindentation identification of Cu-In IMCs 61 2.4 Summary 64 Chapter 3 Direct Bonding of Cu/In by FAB and VVUV at Low Temperature 66 3.1 Introduction 66 3.2 Experimental 69 3.3 Results 73 3.3.1 Change in chemical binding conditions on In surface treated by Ar-FAB 73 3.3.2 Change in chemical binding conditions on In surface treated by V-VUV 75 3.3.3 Change in chemical binding conditions on Cu surface treated by Ar-FAB 81 3.3.4 Change in chemical binding conditions on Cu surface treated by V-VUV 83 3.3.5 Interfacial analysis on Cu/In interface 87 3.3.6 The simulation of ternary diagram of Cu-In-Ni at three temperatures 93 3.3.7 Microstructure evolution of interfaces bonded by FAB after aging at 150 °C 95 3.3.8 Microstructure evolution of interfaces bonded by V-VUV after aging at 150 °C 97 3.3.9 The shear test of Cu-In-Ni samples bonded by FAB and V-VUV 99 3.3.10 The fracture surfaces of Cu-In-Ni samples bonded by FAB 101 3.3.11 The fracture surfaces of Cu-In-Ni samples bonded by V-VUV 103 3. Summary 106 Chapter 4 Conclusion 107 Reference 109 List of figures Figure 1-1 The application roadmap of 3D integration. 2 Figure 1-2 Two samples of 3D packaging. 3 Figure 1-3 Illustration of 3D packaging. 4 Figure 1-4 Formation of two types of SMT defects, i.e., HoP and NWO. 9 Figure 1-5 Schematic of symmetrical bonding of Cu–Sn to Cu–Sn for wafer - level applications. 11 Figure 1-6 Cross-sectional image of a symmetrically bonded Cu/Cu3Sn/Cu bond frame. 11 Figure 1-7 The comparison of number of cycles between pure In solder and other solders. 14 Figure 1-8 The comparison of number of cycles between pure In solder and other solders. 15 Figure 1-9 Cross-sectioned images of the Cu/In joint on ceramic substrate (a) before and (b) after 500 cycles of TC testing. 17 Figure 1-10 Cross-sectioned images of the Cu/Sn3Ag joint on ceramic substrate (a) before and (b) after 500 cycles of TC testing. 17 Figure 1-11 Variation of the shear strength of Cu/In and Cu/Sn3Ag during HTS/TC testing. 18 Figure 1-12 The fluxless bonding process of Cu-In system. 20 Figure 1-13 Schematic diagram of Cu/polymer hybrid bonding bonding by SAB method. 21 Figure 1-14 Schematic diagram of FAB source. 23 Figure 1-15 TEM images show the directly-bonded interface of (a) Cu-Cu, (b) Si-Si, and (c) GaAs-Si through FAB process. 24 Figure 1-16 Outline of VUV treatment and bonding process: 1. vacuum evaporation. and gas introduction; 2. VUV treatment and the hydrate bridge layer created during the treatment; 3. flip-chip bonding process. 27 Figure 1-17 TEM images of interfaces between: (a) PDMS and PDMS; (b) PDMS and Cu; (c) Cu and Cu; (d) quartz and quartz; and, Ti and Ti (SEM imahe). For PDMS and Cu samples, high resolution images of the interfaces are located on the right. 28 Figure 2-1 Schematic diagram showing (a) the process of bonding and (b) the sample after bonding. 38 Figure 2-2 The microstructure of Cu/In/Cu sandwiches after bonding at 180 oC for (a)10 min (as bonded), (b) zoom-in photo of (a), and (c) 2 h. 41 Figure 2-3 The microstructure of Cu/In/Cu sandwiches which were bonded at 180 oC for 10 min and then (a) air cooling (b) gas cooling. 42 Figure 2-4 Phase characterization of Cu-In IMCs based on (a) the SE image. (b) the overlapped image of band contrast map and phase map by Truphase function from Oxford instrument. (c) the EDS line scan along the direction marked in (a) by white arrow. (d) from the EDS line scan, three IMC layers were Cu11In9, Cu2In and Cu7In3 individually. 44 Figure 2-5 BSE images of Cu/In/Cu sandwiches after aging at 245 oC for (a) 72 h, (b) 280, (c) 450 h, and (d) 930 h. 47 Figure 2-6 BSE images of Cu/In/Cu sandwiches after aging at 273 oC for (a) 72 h, (b). 280, (c) 674 h, and (d) 930 h. 48 Figure 2-7 BSE images of Cu/In/Cu sandwiches after aging at 290 oC for (a) 72 h, (b) 168, (c) 280 h, and (d) 674 h. 49 Figure 2-8 The plots of the thickness of Cu-In IMCs layer against square root of the aging time at (a) 245 oC, (b) 273 oC, (c) 290 oC ,and (d) the activation energy of Cu-In IMCs. 52 Figure 2-9 The phenomenon of the formation of Cu2In layer after approaching to voids. The voids were encircled by Cu2In layer before the layer grew thicker in area A, B, C and D. 54 Figure 2-10 The wavy edge phenomenon of Cu-In system. 58 Figure 2-11 (a) The result form band contrast analysis showing the grain size of each phases. (b) the grain orientation of Cu11In9 layer and (c) pole figures analyzed from EBSD data of Cu11In9 layer. 60 Figure 2-12 Load-displacement curve from nanoindentation layer to each Cu-In IMCs layer. 62 Figure 3-1 Schematic diagram of the hybrid bonding apparatus. 71 Figure 3-2 The summary of the bonding process with Ar-FAB and VUV. treatments. (The procedure is the same as on Cu substrates) 72 Figure 3-3 Curve-fitting XPS spectra of (a) C 1s (b) O 1s and spectrum comparison of (c) C 1s, (d) O 1s, and (e) In 3d3/2. (f) Shift of valence and before and after FAB on In surface. 74 Figure. 3-4 Modified layer thickness of the In surface treated by VUV irradiation. (The thickness was set to be zero initially.) 76 Figure 3-5 Curve-fitting XPS spectra of O 1s (a) before V-VUV, (b) after V-VUV, (c) after aging at 50 °C and spectrum comparison of (d) C 1s and (e) In 3d3/2 before and after V-VUV on In surface. 79 Figure 3-6 Comparison of atomic concentration percentage between In2O3 and In(OH)3 at different stages. 80 Figure 3-7 Curve-fitting XPS spectra of (a) C 1s (b) O 1s and spectrum comparison of (c) C 1s, (d) O 1s, and (e) Cu 2p3/2. (f) Shift of valence and before and after FAB on Cu surface. 82 Figure 3-8 Curve-fitting XPS spectra of O 1s (a) before V-VUV, (b) after V-VUV, (c) after aging at 50 °C and spectrum comparison of (d) C 1s and (e) Cu 2p3/2 before and after V-VUV on Cu surface. 85 Figure 3-9 Comparison of atomic concentration percentage between In2O3 and In(OH)3 at different stage. 86 Figure 3-10 SEM images of bonded Cu/In interfaces after bonding through (a) FAB and (b) V-VUV. 88 Figure 3-11 TEM images (a) in low magnification and (b) in high magnification of bonded Cu/In interfaces after bonding through FAB. (c) Diffract patterns of Cu and Cu2In3. 90 Figure 3-12 TEM images (a) in low magnification and (b) in high magnification of bonded Cu/In interfaces after bonding through V-VUV. (c) Diffract patterns of Cu and CuIn2. 92 Figure. 3-13 The simulation of ternary diagram of Cu-In-Ni at 23 °C, 50. °C, and 150 °C. 94 Figure. 3-14 SEM images of Cu/In/Ni sample after bonding through FAB and aging at 150 °C for (a) 0 h, (b) 100 h, and (c) 500 h. 96 Figure. 3-15 SEM images of Cu/In/Ni sample after bonding through V-VUV and aging at 150 °C for (a) 0 h, (b) 100 h, and (c) 500 h. 98 Figure. 3-16 The relationship between the shear strength and the storage time of Cu/In/Ni sample after bonding through FAB and V-VUV. 100 Figure. 3-17 SEM images of fracture surfaces of Cu/In/Ni sample after. bonding through FAB and aging at 150 °C for (a) 0 h, (b) 100 h, and (c) 500 h. 102 Figure. 3-18 SEM images of fracture surfaces of Cu/In/Ni sample after. bonding through V-VUV and aging at 150 °C for (a) 0 h, (b) 100 h, and (c) 500 h. 104 List of figures Table 1-1 Example of melting temperatures of Pb-free solders [7]. 7 Table 1-2 various metal candidates sutiable for SLID[15]. 12 Table. 2-1 The molar volume of each elements and Cu-In IMCs. 55 Table. 2-2 Hardness and Young’s moduli of Cu11In9, Cu2In , and Cu7In3 after. nanoindentation test. 63 | |
| dc.language.iso | en | |
| dc.subject | 低溫焊料 | zh_TW |
| dc.subject | 3D 封裝 | zh_TW |
| dc.subject | 表面分析 | zh_TW |
| dc.subject | 接合 | zh_TW |
| dc.subject | 接合 | zh_TW |
| dc.subject | 3D 封裝 | zh_TW |
| dc.subject | 表面分析 | zh_TW |
| dc.subject | 低溫焊料 | zh_TW |
| dc.subject | surface analysis | en |
| dc.subject | Bonding | en |
| dc.subject | low temperature solder | en |
| dc.subject | Bonding | en |
| dc.subject | low temperature solder | en |
| dc.subject | 3D packaging | en |
| dc.subject | surface analysis | en |
| dc.subject | 3D packaging | en |
| dc.title | 無助銲劑銅銦直接接合製程及其介面反應分析 | zh_TW |
| dc.title | Fluxless direct bonding between Cu/In and the interfacial reaction analysis | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.coadvisor | 重藤曉津(Akitsu Shigetou) | |
| dc.contributor.oralexamcommittee | 林士剛(Shih-kang Lin),宋振銘(Jenn-Ming Song),陳志銘(Chih-Ming Chen) | |
| dc.subject.keyword | 接合,低溫焊料,表面分析,3D 封裝, | zh_TW |
| dc.subject.keyword | Bonding,low temperature solder,3D packaging,surface analysis, | en |
| dc.relation.page | 122 | |
| dc.identifier.doi | 10.6342/NTU202002992 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2020-08-13 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| U0001-1108202017554700.pdf 未授權公開取用 | 45.71 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。