請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49737完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林浩雄(Hao-Hsiung Lin) | |
| dc.contributor.author | Yu-Yin Wang | en |
| dc.contributor.author | 王昱尹 | zh_TW |
| dc.date.accessioned | 2021-06-15T11:45:08Z | - |
| dc.date.available | 2021-08-24 | |
| dc.date.copyright | 2016-08-24 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-08-12 | |
| dc.identifier.citation | [1] D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli and R. Teissier, 'Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ=19 μm) with metaL_metal resonators,' Applied Physics Letters, vol. 104, 021106, Jan 2014.
[2] M H Sun, et.al, 'Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates,' Nanotechnology, vol. 21, pp. 1149-1154, Jul 2010. [3] A. M. Ionescu and H. Riel, 'Tunnel field-effect transistors as energy-efficient electronic switches,' Nature, vol. 479, 329, Nov 2011. [4] C. K. N. Patel and R. E. Slusher, 'Light Scattering by Plasmons and Landau Levels of Electron Gas in InAs,' Physical Review Letter, vol. 167, pp.413-415, Mar 1968. [5] Y. B. Li, I. T. Ferguson, R. A. Stradling, and R. Zallen, 'Raman-scattering by plasmon phonon modes in highly doped n-InAs grown by molecular-beam epitaxy,' Semiconductor Science and Technology, vol. 7, pp. 1149-1154, Sep 1992. [6] X. X. Xu, K. H. Yu, W. Wei, B. Peng, S. H. Huang, Z. H. Chen andX. S. Shen, 'Raman scattering in InAs nanowires synthesized by a solvothermal route,' Applied Physics Letter, vol. 89, 253117, Dec 2006. [7] J. F. Scott, 'Phonon-Plasmon Decoupling : Bound Exciton Resonant Raman Effect in CdS,' Solid State Communications, vol. 9, pp.759-764, Nov 1971. [8] D. Kirillov1, C. B. Cooper III1 and R. A. Powell, ' Raman scattering study of plasma etching damage in GaAs,' Journal of Vacuum Science and Technology B, vol. 4, pp.1316-1317, Aug 1986. [9] H. J. Stolz1 and G. Abstreiter, 'Raman spectroscopy as a surface sensitive technique on semiconductors,' Journal of Vacuum Science and Technology, vol. 19, pp. 380-382, Apr 1981 [10] R. Carles, N. Saintcricq, J. B. Renucci, M. A. Renucci, and A. Zwick, '2nd-Order Raman-scattering in InAs,' Physical Review B, vol. 22, pp. 4804-4815, 1980. [11] L. Artus, R. Cusco, J. Ibanez, J. M. Martin, and G. GonzalezDiaz, 'Raman-scattering criteria for characterization of anneaL_restored zinc blende single crystals: Application to Si+-implanted InP,' Journal of Applied Physics, vol. 82, pp. 3736-3739, Oct 1997. [12] S. Buchner and E. Bursrein, 'Raman Scattering by Wave-Dependent LO-Phonon-Plasmon Modes in n-InAs,' Physical Review Letter, vol. 33, pp.908-911, Oct 1974. [13] L. Botha, P. Shamba and J. R. Botha, 'Electrical characterization of InAs thin films,' Physica Status Solidi (c), vol. 5, pp.620-622, Feb 2008. [14] http://www.ioffe.ru/SVA/NSM/Semicond/InAs/bandstr.html [15] T. A. Tanzer, P. W. Bohn, I. V. Roshchin, L. H. Greene, and J. F. Klem, 'Near-surface electronic structure on InAs(100) modified with self-assembled monolayers of alkanethiols,' Applied Physics Letters, vol. 75, pp. 2794-2796, Nov 1999. [16] H.Y. Deng, J.H. Guo, Y. Zhang, R. Cong, G.J. Hu, G.L. Yu, N. Dai, 'Evolution of Raman spectra in n-InAs wafer with annealing temperature,' Applied Surface Science, vol. 288, pp. 40-43, Dec 2013. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49737 | - |
| dc.description.abstract | 本論文研究主題為以拉曼散射觀察不同濃度砷化銦光學特性，由拉曼頻譜中觀察到自由載子和縱向光學聲子耦合產生縱向光學模態，並由實驗裡觀察到縱向光學聲子的信號，以波向量說明LO訊號是來自砷化銦表面電子累積層的貢獻；L_則是來自累積層以外的區域。
於變功率量測下，低摻雜濃度砷化銦較容易受到雷射激發載子的影響，其LO-plasmon couple mode (L_)因激發載子的影響，有一逆向電場形成，讓原本在表面電子累積層的電場減小，影響累積層的厚度；高摻雜濃度砷化銦，其雷射功率影響並不顯卓，由LO以及L_強度分析，推測激發載子濃度與本質濃度接近，推測累積層幾乎維持不變。 | zh_TW |
| dc.description.abstract | In this thesis, we use Raman spectroscopy to investigate the lattice vibrational modes of InAs grown by molecular beam epitaxy (MBE). The Raman spectra of InAs epilayers for various carrier concentrations shows that the carriers strongly interact with the LO mode for n-type semiconductors, which results in coupled plasmon modes (L_) and the unscreened LO phonon mode within the accumulation layer on the surface.
With the variety of laser power excitation, we observe the undoped InAs sample strongly dependent on the incident power. The LO-plasmon couple mode (L_) reduces the surface field due to the photo-generated carriers. The thickness of the accumulation layer therefore become thinner. Compared to the undoped sample, the heavily doping InAs has little effect on the incident power and the thickness nearly remains constant because the amount of the photo-generated carriers is nearly equal to the doping concentration. . | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T11:45:08Z (GMT). No. of bitstreams: 1 ntu-105-R03941031-1.pdf: 7729679 bytes, checksum: 13f0fb7aceeab2c8734c5629ce0dce8e (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 致謝 i
摘要 ii Abstract iii 目錄 iv 圖目錄 v 表目錄 vii 第一章 簡介 1 1-1 應用與動機 1 1-2 縱向聲子與電漿子 2 1-3 波向量的使用 4 1-4 研究架構 5 第二章 實驗方向與架構 6 2-1 砷化銦製備 6 2-2 拉曼量測與原理 7 第三章 結果與討論 10 3-1 砷化銦之 Raman 頻譜 10 3-2 Raman scattering results 11 3-2-1 L_ modes 13 3-2-2 LO modes 15 3-2 功率變化 18 3-3-1 Undoped砷化銦 25 3-3-2 雷射影響累積層厚度 25 第四章 結論 32 參考資料 33 | |
| dc.language.iso | zh-TW | |
| dc.title | 以拉曼頻譜探悉砷化銦之光學特性 | zh_TW |
| dc.title | The Study on the Optical Properties of InAs by Raman Spectroscopy | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 毛明華(Ming-Hua Mao),王智祥(Jyh-Shyang Wang),金宇中(Yu-Chung Chin) | |
| dc.subject.keyword | 砷化銦,拉曼,縱向光學聲子,載子濃度,累積層, | zh_TW |
| dc.subject.keyword | InAs,Raman,longitudinal optical mode,carrier concentration,accumulation layer, | en |
| dc.relation.page | 34 | |
| dc.identifier.doi | 10.6342/NTU201602490 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2016-08-15 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-105-1.pdf 目前未授權公開取用 | 7.55 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。