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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 廖尉斯(Wei-Ssu Liao) | |
dc.contributor.author | Yu-Wei Huang | en |
dc.contributor.author | 黃昱維 | zh_TW |
dc.date.accessioned | 2021-06-15T11:36:42Z | - |
dc.date.available | 2019-08-19 | |
dc.date.copyright | 2016-11-02 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-15 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49595 | - |
dc.description.abstract | 在奈米製程技術中,光微影技術因低成本,高產率的優勢而被廣泛運用於學術界以及科技業界,然而隨著奈米製程愈做愈小,圖案解析度受限於繞射極限的光微影技術開始遭遇困難。因此我們在這篇研究中以自我塌陷軟性材料結合近期發表於國際期刊的化學拔除法,在保有低成本、高產率的優勢下以微米等級的製程來突破光繞射極限得到更好的奈米解析度。當軟性材料與表面接觸時,因為材料本身具有形變的特性而發生塌陷行為,在塌陷的區域和原本接觸的區域之間會存在著間隙,這間隙所形成的圖案大約只有原本的圖案十分之一左右,用這樣的方式我們可以從微米的操作條件來做出奈米等級的大面積圖形。 | zh_TW |
dc.description.abstract | Conventional Photolithography is an important technique in array patterning. However, diffraction of light occurring in the process limits the pattern resolution significantly. Herein, well-designed roof-collapsed polydimethylsiloxane (PDMS) stamps incorporated with chemical lift-off lithography (CLL) is used to print large area features with high resolution. When pre-designed stamp features come into contact with the substrate, parts of the PDMS stamp collapse onto the surface and creates gaps between the original contacting and the collapsing areas. These resulting gaps were found to be 10-fold smaller than the stamp feature sizes. Large area nanostructure patterning can therefore be achieved through the use of micro scale feature design. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T11:36:42Z (GMT). No. of bitstreams: 1 ntu-105-R03223167-1.pdf: 2521495 bytes, checksum: 04be9ea93be530d1607e6e934eb07cc7 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 摘要 i
Abstract ii 目 錄 iii 圖目錄 iv 第一章 緒論 1 1.1 引言 1 1.2 奈米製程技術發展近況 2 1.2.1 光微影技術 2 1.2.2 極紫外光微影技術 4 1.2.3 X光微影技術 6 1.2.4 電子集束微影技術 7 1.2.5 離子集束微影技術 8 1.2.6 軟微影技術 10 1.2.7 化學拔除微影技術 12 第二章 實驗原理與方法 15 2.1 化學拔除微影技術 15 2.2 自我塌陷軟性材料 15 2.3 實驗藥品材料與儀器用具 18 2.4 實驗步驟 19 第三章 實驗結果與討論 23 3.1 柱子型轉印圖案之幾何結構與塌陷結果 23 3.2 坑洞型轉印圖案之幾何結構與塌陷結果 27 3.3 結構高度和PDMS重量對環型線寬的影響 29 第四章 結論與展望 32 第五章 參考文獻 33 | |
dc.language.iso | zh-TW | |
dc.title | 利用自我塌陷軟性材料結合化學拔除法之奈米製程 | zh_TW |
dc.title | Large Area Nanostructure Pattering with Roof-Collapsed PDMS by Chemical Lift-Off Lithography | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳浩銘(Hao Ming Chen),羅世強(shyh-chyang Luo),李介仁(Jie-Ren Li) | |
dc.subject.keyword | 化學拔除法,軟性材料,塌陷現象,奈米結構, | zh_TW |
dc.subject.keyword | Chemical Lift-Off Lithography,PDMS,Roof-Collapsed,Nanostructure, | en |
dc.relation.page | 35 | |
dc.identifier.doi | 10.6342/NTU201602755 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-16 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 化學研究所 | zh_TW |
顯示於系所單位: | 化學系 |
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