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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 高振宏(Chen-Hung Kao) | |
| dc.contributor.author | Sze-Yin Lin | en |
| dc.contributor.author | 林思印 | zh_TW |
| dc.date.accessioned | 2021-06-15T11:15:38Z | - |
| dc.date.available | 2025-08-17 | |
| dc.date.copyright | 2020-08-26 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-08-14 | |
| dc.identifier.citation | [1] D.C. Brock, G.E. Moore, Understanding Moore's Law: Four Decades of Innovation, Chemical Heritage Foundation, 2006. [2] Y.J. Chen, C.K. Chung, C.R. Yang, C.R. Kao, Single-joint shear strength of micro Cu pillar solder bumps with different amounts of intermetallics, Microelectron. Reliab., 53 (2013) 47-52. [3] S. Annuar, R. Mahmoodian, M. Hamdi, K.N. Tu, Intermetallic compounds in 3D integrated circuits technology: a brief review (vol 18, pg 693, 2017), Sci. Technol. Adv. Mater., 18 (2017) 755-755. [4] Y. Li, D. Goyal, 3D Microelectronic packaging: from fundamentals to applications, Springer, 2017. [5] K.-N. Chen, K.-N. Tu, Materials challenges in three-dimensional integrated circuits, MRS Bulletin, 40 (2015) 219-222. [6] J.H. Lau, TSV manufacturing yield and hidden costs for 3D IC integration, in: 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC), 2010, pp. 1031-1042. [7] J.H. Lau, Overview and outlook of three-dimensional integrated circuit packaging,three-dimensional Si integration, and three-dimensional integrated circuit integration, J Electron Packag, Trans ASME, 136 (2014). [8] M.C. Hsu, Advanced microelectronic 3D-IC packaging, first ed., Wu-Nan Book, Taipei City, 2011. [9] C. Lee, T. Chang, J.H. Lau, Y. Huang, H. Fu, J. Huang, Z. Hsiao, C. Ko, R. Cheng, P. Chang, K. Kao, Y. Lu, R. Lo, M. Kao, Wafer Bumping, Assembly, and Reliability of Fine- Pitch Lead-Free Micro Solder Joints for 3-D IC Integration, IEEE Transactions on Components, Packaging and Manufacturing Technology, 2 (2012) 1229-1238. [10] B. Banijamali, S. Ramalingam, H. Liu, M. Kim, Outstanding and innovative reliability study of 3D TSV interposer and fine pitch solder micro-bumps, in: 2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012, San Diego, CA, 2012, pp. 309-314. [11] H.Y. Chuang, T.L. Yang, M.S. Kuo, Y.J. Chen, J.J. Yu, C.C. Li, C.R. Kao, Critical Concerns in Soldering Reactions Arising from Space Confinement in 3-D IC Packages, IEEE Transactions on Device and Materials Reliability, 12 (2012) 233-240. [12] K.N. Tu, H.Y. Hsiao, C. Chen, Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy, Microelectron. Reliab., 53 (2013) 2-6. [13] J.F. Li, P.A. Agyakwa, C.M. Johnson, Interfacial reaction in Cu/Sn/Cu system during the transient liquid phase soldering process, Acta Materialia, 59 (2011) 1198-1211. [14] C.R. Kao, H.Y. Chuang, W.M. Chen, T.L. Yang, M.S. Kuo, Y.J. Chen, J.J. Yu, C.C. Li, Soldering reactions under space confinement for 3D IC applications, in: 2012 IEEE 62nd Electronic Components and Technology Conference, 2012, pp. 724-728. [15] R. Zhang, Y. Tian, C. Hang, B. Liu, C. Wang, Formation mechanism and orientation of Cu3Sn grains in Cu–Sn intermetallic compound joints, Mater. Lett., 110 (2013) 137- 140. [16] T.L. Yang, J.J. Yu, W.L. Shih, C.H. Hsueh, C.R. Kao, Effects of silver addition on Cu–Sn microjoints for chip-stacking applications, J. Alloy. Compd., 605 (2014) 193-198. [17] L. Mo, F. Wu, C. Liu, Growth kinetics of IMCs in Cu-Sn intermetallic joints during isothermal soldering process, in: 2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 2015, pp. 1854-1858. [18] P. Yao, X.Y. Li, X.B. Liang, B. Yu, F.Y. Jin, Y. Li, A study on interfacial phase evolution during Cu/Sn/Cu soldering with a micro interconnected height, Mater. Charact., 131 (2017) 49-63. [19] C. Hang, Y. Tian, R. Zhang, D. Yang, Phase transformation and grain orientation of Cu–Sn intermetallic compounds during low temperature bonding process, Journal of Materials Science: Materials in Electronics, 24 (2013) 3905-3913. [20] K. Ruhmer, E. Laine, K. O'Donnell, J. Kostetsky, K. Hauck, D. Manessis, A. Ostmann, M. Toepper, N. Juergensen, Alternative UBM for lead free solder bumping using C4NP, in: 57th Electronic Components and Technology Conference 2007, ECTC '07, Sparks, NV, 2007, pp. 15-21. [21] F. Zhang, M. Li, C.C. Chum, C.H. Tung, Effects of substrate metallizations on solder/underbump metallization interfacial reactions in flip-chip packages during thermal aging, J. Mater. Res., 18 (2003) 1333-1341. [22] R.K. Ulrich, W.D. Brown, Advanced electronic packaging, 2nd ed., Wiley- Interscience/IEEE, Hoboken, NJ, 2006. [23] R.R. Tummala, Fundamentals of microsystems packaging McGraw-Hill, New York, 2001. [24] M.K. Md Arshad, U. Hashim, M. Isa, Under bump metallurgy (UBM) - A technology review for flip chip packaging, Int. J. Mech. Mater. Eng., 2 (2007) 48-54. [25] S.-Y. Jang, J. Wolf, K.-W. Paik, Under bump metallurgy study for Pb-free bumping,Journal of Electronic Materials, 31 (2002) 478-487. [26] T.J. Kim, Y.M. Kim, Y.H. Kim, Sputtered Ni-Zn under bump metallurgy (UBM) for Sn-Ag-Cu solders, J. Alloy. Compd., 535 (2012) 33-38. [27] J.W. Nah, K.W. Paik, Investigation of flip chip under bump metallization systems of Cu pads, IEEE Trans. Compon. Packag. Technol., 25 (2002) 32-37. [28] M. He, A. Kumar, P.T. Yeo, G.J. Qi, Z. Chen, Interfacial reaction between Sn-rich solders and Ni-based metallization, Thin Solid Films, 462-463 (2004) 387-394. [29] B.S. Berry, I. Ames, Studies of the SLT Chip Terminal Metallurgy, IBM Journal of Research and Development, 13 (1969) 286-296. [30] H.K. Kim, K.N. Tu, P.A. Totta, Ripening‐assisted asymmetric spalling of Cu‐Sn compound spheroids in solder joints on Si wafers, Applied Physics Letters, 68 (1996) 2204-2206. [31] A.A. Liu, H.K. Kim, K.N. Tu, P.A. Totta, Spalling of Cu6Sn5 spheroids in the soldering reaction of eutectic SnPb on Cr/Cu/Au thin films, Journal of Applied Physics, 80 (1996) 2774-2780. [32] C.Y. Liu, H.K. Kim, K.N. Tu, P.A. Totta, Dewetting of molten Sn on Au/Cu/Cr thin‐film metallization, Applied Physics Letters, 69 (1996) 4014-4016. [33] G.Z. Pan, A.A. Liu, H.K. Kim, K.N. Tu, P.A. Totta, Microstructures of phased-in Cr– Cu/Cu/Au bump-limiting metallization and its soldering behavior with high Pb content and eutectic PbSn solders, Applied Physics Letters, 71 (1997) 2946-2948. [34] P.G. Kim, J.W. Jang, T.Y. Lee, K.N. Tu, Interfacial reaction and wetting behavior in eutectic SnPb solder on Ni/Ti thin films and Ni foils, Journal of Applied Physics, 86 (1999) 6746-6751. [35] C.Y. Liu, S.J. Wang, Prevention of spalling by the self-formed reaction barrier layer on controlled collapse chip connections under bump metallization, Journal of Electronic Materials, 32 (2003) L1-L3. [36] S.-k. Lin, K.-d. Chen, H. Chen, W.-k. Liou, Y.-w. Yen, Abnormal spalling phenomena in the Sn-0.7Cu/Au/Ni/SUS304 interfacial reactions, J. Mater. Res., 25 (2011) 2278-2286. [37] H.-P. Park, G. Seo, S. Kim, K.-o. Ahn, Y.-H. Kim, Shear strength between Sn– 3.0Ag–0.5Cu solders and Cu substrate after two solid-state aging processes for fan-out package process applications, Journal of Materials Science: Materials in Electronics, 30 (2019) 10550-10559. [38] C.E. Ho, Y.W. Lin, S.C. Yang, C.R. Kao, D.S. Jiang, Effects of limited Cu supply on soldering reactions between SnAgCu and Ni, Journal of Electronic Materials, 35 (2006)1017-1024. [39] S.C. Yang, C.E. Ho, C.W. Chang, C.R. Kao, Massive spalling of intermetallic compounds in solder-substrate reactions due to limited supply of the active element, Journal of Applied Physics, 101 (2007). [40] C.E. Ho, S.C. Yang, C.R. Kao, Interfacial reaction issues for lead-free electronic solders, Journal of Materials Science: Materials in Electronics, 18 (2007) 155-174. [41] W.M. Chen, S.C. Yang, M.H. Tsai, C.R. Kao, Uncovering the driving force for massive spalling in the Sn–Cu/Ni system, Scr. Mater., 63 (2010) 47-49. [42] Y.-H. Wu, C.-Y. Yu, C.-Y. Ho, J.-G. Duh, Retardation of (Cu,Ni)6Sn5 spalling in Sn– Ag–Cu/Ni solder joints via controlling the grain structure of Ni metallization layer, Mater. Lett., 105 (2013) 40-42. [43] S.C. Yang, C.E. Ho, C.W. Chang, C.R. Kao, Strong Zn concentration effect on the soldering reactions between Sn-based solders and Cu, J. Mater. Res., 21 (2006) 2436- 2439. [44] J.W. Jang, L.N. Ramanathan, J.K. Lin, D.R. Frear, Spalling of Cu3Sn intermetallics in high-lead 95Pb5Sn solder bumps on Cu under bump metallization during solid-state annealing, Journal of Applied Physics, 95 (2004) 8286-8289. [45] M.H. Tsai, Y.W. Lin, H.Y. Chuang, C.R. Kao, Effect of Sn concentration on massive spalling in high-Pb soldering reaction with Cu substrate, J. Mater. Res., 24 (2009) 3407- 3411. [46] J.W. Yoon, B.I. Noh, S.B. Jung, Comparative study of ENIG and ENEPIG as surface finishes for a Sn-Ag-Cu solder joint, Journal of Electronic Materials, 40 (2011) 1950- 1955. [47] M.L. Huang, F. Yang, Solder Size Effect on Early Stage Interfacial Intermetallic Compound Evolution in Wetting Reaction of Sn3.0Ag0.5Cu/ENEPIG Joints, Journal of Materials Science Technology, 31 (2015) 252-256. [48] H. Chen, Y.L. Tsai, Y.T. Chang, A.T. Wu, Effect of massive spalling on mechanical strength of solder joints in Pb-free solder reflowed on Co-based surface finishes, J. Alloy. Compd., 671 (2016) 100-108. [49] Y.-W. Yen, A.D. Laksono, C.-Y. Yang, Investigation of the interfacial reactions between Sn-3.0 wt%Ag-0.5 wt%Cu solder and Cu Ti alloy (C1990HP), Microelectron. Reliab., 96 (2019) 29-36. [50] G.T. Lim, B.J. Kim, K. Lee, J. Kim, Y.C. Joo, Y.B. Park, Temperature Effect on Intermetallic Compound Growth Kinetics of Cu Pillar/Sn Bumps, Journal of Electronic Materials, 38 (2009) 2228-2233. 51] W.M. Tang, A.Q. He, Q. Liu, D.G. Ivey, Solid state interfacial reactions in electrodeposited Cu/Sn couples, Trans. Nonferrous Met. Soc. China, 20 (2010) 90-96. [52] Y.W. Wang, T.L. Yang, J.Y. Wu, C.R. Kao, Pronounced effects of Zn additions on Cu-Sn microjoints for chip-stacking applications, J. Alloy. Compd., 750 (2018) 570-576. [53] C.Y. Liu, L. Ke, Y.C. Chuang, S.J. Wang, Study of electromigration-induced Cu consumption in the flip-chip SnCu solder bumps, Journal of Applied Physics, 100 (2006). [54] K.K. Hong, J.B. Ryu, C.Y. Park, J.Y. Huh, Effect of cross-interaction between Ni and Cu on growth kinetics of intermetallic compounds in Ni/Sn/Cu diffusion couples during aging, Journal of Electronic Materials, 37 (2007) 61-72. [55] B. Dimcic, R. Labie, J. De Messemaeker, K. Vanstreels, K. Croes, B. Verlinden, I. De Wolf, Diffusion growth of Cu3Sn phase in the bump and thin film Cu/Sn structures, Microelectron. Reliab., 52 (2012) 1971-1974. [56] B.-H. Kwak, M.-H. Jeong, J.-W. Kim, B. Lee, H.-J. Lee, Y.-B. Park, Correlations between interfacial reactions and bonding strengths of Cu/Sn/Cu pillar bump, Microelectronic Engineering, 89 (2012) 65-69. [57] T.T. Luu, A. Duan, K.E. Aasmundtveit, N. Hoivik, Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization, Journal of Electronic Materials, 42 (2013) 3582-3592. [58] Wafer level 3-d ics process technology, Springer-Verlag US, Boston, MA, 2008. [59] K.N. Tu, Interdiffusion and reaction in bimetallic Cu-Sn thin films, Acta Metallurgica, 21 (1973) 347-354. [60] J. Yu, J.Y. Kim, Effects of residual S on Kirkendall void formation at Cu/Sn-3.5Ag solder joints, Acta Materialia, 56 (2008) 5514-5523. [61] L. Yina, P. Borgesen, On the root cause of Kirkendall voiding in Cu3Sn, J. Mater. Res., 26 (2011) 455-466. [62] P.T. Lee, Y.S. Wu, P.C. Lin, C.C. Chen, W.Z. Hsieh, C.E. Ho, High-speed Cu electrodeposition and its solderability, Surface and Coatings Technology, 320 (2017) 559- 567. [63] P.T. Lee, Y.S. Wu, C.Y. Lee, H.C. Liu, C.E. Ho, High-speed Cu electrodeposition and reliability of Cu pillar bumps in high-temperature storage, J Electrochem Soc, 165 (2018) D647-D653. [64] W.-L. Chiu, C.-M. Liu, Y.-S. Haung, C. Chen, Formation of nearly void-free Cu3Sn intermetallic joints using nanotwinned Cu metallization, 104 (2014) 171902. [65] I. Panchenko, K. Croes, I. De Wolf, J. De Messemaeker, E. Beyne, K.-J. Wolter, Degradation of Cu6Sn5 intermetallic compound by pore formation in solid–liquid interdiffusion Cu/Sn microbump interconnects, Microelectronic Engineering, 117 (2014) 26-34. [66] C. Chen, D. Yu, K.-N. Chen, Vertical interconnects of microbumps in 3D integration, MRS Bulletin, 40 (2015) 257-263. [67] D.T. Chu, Y.-C. Chu, J.-A. Lin, Y.-T. Chen, C.-C. Wang, Y.-F. Song, C.-C. Chiang, C. Chen, K.N. Tu, Growth competition between layer-type and porous-type Cu3Sn in microbumps, Microelectron. Reliab., 79 (2017) 32-37. [68] A. Paul, C. Ghosh, W.J. Boettinger, Diffusion Parameters and Growth Mechanism of Phases in the Cu-Sn System, Metallurgical and Materials Transactions A, 42 (2011) 952-963. [69] J.F. Shackelford, W. Alexander, J.S. Park, CRC materials science and engineering handbook 2nd ed. ed., CRC Press, Boca Raton, 1994. [70] H.P.R. Frederikse, R.J. Fields, A. Feldman, THERMAL AND ELECTRICAL- PROPERTIES OF COPPER-TIN AND NICKEL-TIN INTERMETALLICS, Journal of Applied Physics, 72 (1992) 2879-2882. [71] T. Ishitani, H. Tsuboi, Objective comparison of scanning ion and scanning electron microscope images, Scanning, 19 (1997) 489-497. [72] M.W. Phaneuf, Applications of focused ion beam microscopy to materials science specimens, Micron, 30 (1999) 277-288. [73] C.E. Ho, Electronic packages and surface finish technology of copper, first ed., TPCA, Taoyuan City, 2018. [74] P.J. Shang, Z.Q. Liu, D.X. Li, J.K. Shang, Directional growth of Cu3Sn at the reactive interface between eutectic SnBi solder and (1 0 0) single crystal Cu, Scr. Mater., 59 (2008) 317-320. [75] P.J. Shang, Z.Q. Liu, X.Y. Pang, D.X. Li, J.K. Shang, Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates, Acta Materialia, 57 (2009) 4697- 4706. [76] P.J. Shang, Z.Q. Liu, D. Li, J.K. Shang, Orientation relationships among Sn/Cu6Sn5/Cu3Sn/(111)Cu in the eutectic SnBi/(111)Cu solder joint, in: 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010, Xi'an, 2010, pp. 165-169. [77] K.-K. Wang, D. Gan, K.-C. Hsieh, The orientation relationships of the Cu3Sn/Cu interfaces and a discussion of the formation sequence of Cu3Sn and Cu6Sn5, Thin Solid Films, 562 (2014) 398-404. [78] M.Y. Tsai, S.C. Yang, Y.W. Wang, C.R. Kao, Grain growth sequence of Cu3Sn in the Cu/Sn and Cu/Sn–Zn systems, J. Alloy. Compd., 494 (2010) 123-127. [79] J.O. Suh, K.N. Tu, N. Tamura, Preferred orientation relationship between Cu6Sn5 scallop-type grains and Cu substrate in reactions between molten Sn-based solders and Cu, 102 (2007) 063511. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49087 | - |
| dc.description.abstract | 電子封裝產業之線寬微縮製程因為物理限制與複雜昂貴的微影製程而逼近極 限，三維積體電路藉由微銲點與矽穿孔技術，進行多種不同功能晶片之垂直性整 合，被視為最有潛力延續摩爾定律之封裝技術。然而，隨著微銲點的體積與銲點底 層金屬厚度的縮減，界面反應將在晶片組裝或時效處理過後耗盡銲錫，形成全介金 屬化合物接點，甚至更進一步耗盡潤濕層，使得介金屬化合物直接與黏著層直接接 觸。此行為稱為界面反應之最終端行為，這是在文獻中至今缺乏相關研究一塊。本 研究探討超薄層銅錫微銲點於固態時效處理後，界面反應之最終階段時的顯微結 構演變，並觀察剝離現象的發生與其發生機制。另外，有鑑於在金相製備時微銲點 與銲點底層金屬的界面易於產生裂紋影響觀測，故我們利用氬離子切割拋磨機來 進行金相製備，並藉由掃描式電子顯微鏡進行微結構觀察。 由顯微結構觀測的結果發現，當潤濕層(銅)在固態時效處理時耗盡後，界面 反應產生的 Cu6Sn5 與 Cu3Sn 就會從黏著層剝離，而此剝離現象的驅動力為介金屬 化合物與潤濕層之間的高界面能。此外，由微銲點破斷面分析結果顯示，已經產生 剝離的微銲點強度會大幅下降，對電子元件銲點的可靠度造成嚴重的威脅。故為了 避免剝離現象的產生，潤濕層的厚度一定要足夠到不被銲料所消耗殆盡。 本研究亦探討介金屬化合物的生長動力學行為，實驗結果發現在固態時效處 理與不考慮表面擴散的條件下，超薄層微銲點中的 Cu3Sn 符合拋物線生長速率定 律，而且銲料與銲點底層金屬體積的減少對於 Cu3Sn 成長速度沒有顯著的影響。 最後，穿透式菊池繞射分析結果指出 Cu3Sn 與 Cu 並無存有明顯的晶粒方向對應的 關係。本研究的結果建立了超薄層微銲點界面反應之最終端行為。 | zh_TW |
| dc.description.abstract | As the electronics packaging industries encounter physical limitation and more sophisticated and expensive of lithography in further scaling down transistor size, three- dimensional integrated circuits (3D ICs) provide the most promising approach to extend Moore’s law by vertically stacking of multiple functional chips with micro joints and Through-Silicon-Vias. Consequently, with the miniaturization of solder joints and reduction in thickness of the Under Bump Metallurgy, solders would form full intermetallic compound (IMC) joints and even deplete the wetting layer after assembling or aging. Therefore, IMCs will directly attach to the adhesion layer at the terminal stage of interfacial reactions, which has never been discussed in previous studies. In this study, we explored the microstructure evolution of ultra-thin Cu/Sn micro joints and occurrence and mechanisms of the spalling phenomenon during solid-state aging. Ar ion milling system (Hitachi Ion Milling System IM4000Plus) was applied in our study to create artifact-free cross-sections. The microstructure evolution was analyzed by scanning electron microscopy (SEM). The microstructure evolution of ultra-thin Cu/Sn micro joints shows that spalling of Cu6Sn5 and Cu3Sn from the adhesion layer occurs when Cu is consumed during solid-state aging. The driving force for the spalling of Cu-Sn IMCs is the high interfacial energy between IMCs and the adhesion layer. Also, the fracture surface analysis shows that the strength of spalled specimens is significantly reduced, which deteriorates solder joint reliability. To prevent the spalling of IMCs, the wetting layer must be sufficient to not be consumed by solders. Besides, the growth kinetics show that the growth of Cu3Sn follows a parabolic law and the volume of Sn and Cu has little influence on the Cu3Sn growth rate during solid- state reactions without considering the effect of surface diffusion. Transmission Kikuchi diffraction analysis shows that no preferred orientation between Cu and Cu3Sn in ultra- thin micro joints was found. These results of this study establish terminal reaction behaviors in ultra-thin micro joints | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T11:15:38Z (GMT). No. of bitstreams: 1 U0001-1208202022562900.pdf: 8318231 bytes, checksum: 939397afc3d2ed4bd1bf074ebe4b50cd (MD5) Previous issue date: 2020 | en |
| dc.description.tableofcontents | 誌謝 ................................................................................................................................... i 摘要 ................................................................................................................................. iii Abstract .......................................................................................................................... iv Contents.......................................................................................................................... vi List of Figures ................................................................................................................ ix List of Tables ............................................................................................................... xvii Chapter 1 Introduction .................................................................................................. 1 1.1 3D IC Integration Technology ...........................................................................................................1 1-2 Issues Arising from 3D IC Micro Joints ............................................................................................5 1-3 Microstructure Evolution in 3D IC Micro Joints...............................................................................7 1-4 Under Bump Metallurgy (UBM).....................................................................................................13 Chapter 2 Literature Review ....................................................................................... 17 2.1 Spalling Phenomena ........................................................................................................................17 2.1.1 Regular Spalling.......................................................................................................................18 2.1.2 Massive Spalling......................................................................................................................24 2.2 IMC Growth Kinetics ......................................................................................................................31 Chapter 3 Research Objectives ................................................................................... 40 Chapter 4 Experimental Procedures........................................................................... 42 4.1 SamplePreparation..........................................................................................................................42 4.2 Metallographic Preparation and Cross-Section Milling...................................................................45 4.3 Microstructure and Fracture Analysis.............................................................................................46 4.4 Theories and Assumptions for Kinetics Analysis ............................................................................47 4.5 TKD Analysis ..................................................................................................................................48 Chapter 5 Results and Discussion ............................................................................... 49 5.1 Microstructure Evolution of Cu/Sn Micro Joints.............................................................................49 5.1.1 As-plated Cu/Sn Micro Joint....................................................................................................49 5.1.2 Cu/Sn Micro Joint Aging at 200 °C for 24 hours ..................................................................... 52 5.1.3 Cu/Sn Micro Joint Aging at 200 °C for 48 hours ..................................................................... 56 5.1.4 Cu/Sn Micro Joint Aging at 200 °C for 72 hours ..................................................................... 60 5.2 Micro Joints Cross-Section by Using FIB .......................................................................................65 5.3 Fracture Surface Analysis...............................................................................................................69 5.4 IMC Growth Kinetics in Ultra-Thin Micro Joints ...........................................................................74 5.5 Crystallographic Orientation Relationship between Cu and Cu3Sn.................................................79 Chapter 6 Conclusions ................................................................................................. 85 Reference ....................................................................................................................... 87 | |
| dc.language.iso | en | |
| dc.subject | 剝離 | zh_TW |
| dc.subject | 三維積體電路 | zh_TW |
| dc.subject | 超薄層微銲點 | zh_TW |
| dc.subject | 介金屬化合物 | zh_TW |
| dc.subject | Ultra-thin Micro Joints | en |
| dc.subject | Spalling | en |
| dc.subject | Intermetallic Compounds | en |
| dc.subject | 3D IC | en |
| dc.title | 超薄層微銲點界面反應之最終端行為時介金屬剝離現象 | zh_TW |
| dc.title | Spalling of Intermetallic Compounds at Terminal Reaction in Ultra-Thin Micro Joints | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王儀雯(Yi-Wun Wang),吳子嘉(Tzu-Chia Wu),何政恩(Cheng-En Ho),顏怡文(Yee-Wen Yen) | |
| dc.subject.keyword | 三維積體電路,超薄層微銲點,介金屬化合物,剝離, | zh_TW |
| dc.subject.keyword | 3D IC,Ultra-thin Micro Joints,Intermetallic Compounds,Spalling, | en |
| dc.relation.page | 99 | |
| dc.identifier.doi | 10.6342/NTU202003163 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2020-08-14 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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