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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張慶瑞 | |
| dc.contributor.author | Wei-Chen Chien | en |
| dc.contributor.author | 錢偉臣 | zh_TW |
| dc.date.accessioned | 2021-06-15T11:11:28Z | - |
| dc.date.available | 2016-08-25 | |
| dc.date.copyright | 2016-08-25 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-08-22 | |
| dc.identifier.citation | [1] Y. H. Chiu, Y. H. Lai, J. H. Ho, D. S. Chuu, and M. F. Lin. Electronic structure of a two-dimensional graphene monolayer in a spatially modulated magnetic field: Peierls tight-binding model. Physical Review B, 77(4), Jan. 2008.
[2] S. Datta. Quantum Transport: Atom to Transistor. Cambridge University Press, Cambridge, 2005. [3] R. Golizadeh-Mojarad, A. N. M. Zainuddin, G. Klimeck, and S. Datta. Atomistic non-equilibrium Green’sfunction simulations of Graphene nano-ribbons in the quantum hall regime. Journal of Computational Electronics, 7(3):407-410, Sept. 2008. [4] C. W. Groth, M. Wimmer, A. R. Akhmerov, and X. Waintal. Kwant: a software package for quantum transport. New Journal of Physics, 16(6):063065, June 2014. [5] Y. Hancock, A. Uppstu, K. Saloriutta, A. Harju, and M. J. Puska. Generalized tight-binding transport model for graphene nanoribbon-based systems. Physical Review B, 81(24), June 2010. [6] M. Hjort and S. Stafström. Modeling vacancies in graphite via the Hückel method. Physical Review B, 61(20):14089–14094, May 2000. [7] F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer, and W. Poirier. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide. Nature ommunications, 6:6806, Apr. 2015. [8] A. Luican-Mayer and E. Y. Andrei. Probing Dirac Fermions in Graphene by Scanning Tunneling Microscopy and Spectroscopy. In H. Aoki and M. S. Dresselhaus, editors, Physics of Graphene, pages 29–63. Springer International Publishing, Cham, 2014. [9] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov. Two-dimensional gas of massless Diracfermions in graphene. Nature, 438(7065):197–200, Nov. 2005. [10] Z. Tan, C. Tan, L. Ma, G. T. Liu, L. Lu, and C. L. Yang. Shubnikov-de Haas oscillations of a single layer graphene under dc current bias. Physical Review B, 84(11), Sept. 2011. [11] D. Vaid. Quantum Hall Effect and Black Hole Entropy in Loop Quantum Gravity. arXiv:1208.3335 [gr-qc, physics:hep-th], Aug. 2012. arXiv: 1208.3335. [12] H.-C. Wu, M. Abid, Y.-C. Wu, C. Ó Coileáin, A. Syrlybekov, J. F. Han, C. L. Heng, H. Liu, M. Abid, and I. Shvets. Enhanced Shubnikov–De Haas Oscillation in Nitrogen-Doped Graphene. ACS Nano, 9(7):7207–7214, July 2015. [13] Y.-J. Yu, Y. Zhao, S. Ryu, L. E. Brus, K. S. Kim, and P. Kim. Tuning the Graphene Work Function by Electric Field Effect. Nano Letters, 9(10):3430–3434, Oct. 2009. [14] Y. Zhang, Z. Jiang, J. P. Small, M. S. Purewal, Y.-W. Tan, M. Fazlollahi, J. D. Chudow, J. A. Jaszczak, H. L. Stormer, and P. Kim. Landau-Level Splitting in Graphene in High Magnetic Fields. Physical Review Letters, 96(13), Apr. 2006. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48916 | - |
| dc.description.abstract | 石墨烯在最近十年成為最為熱門的二維材料。其傳輸性質受到半導體界的重視，期待能夠控制並製作出高效能與低功耗元件。雖然石墨烯的理論與實驗漸趨完備，惟實驗系統的設置有其複雜性，且介觀物理實驗至今仍是大宗，還有許多討論的空間。像是對石墨烯作參雜（doping）、改變應力（strain）、或是含有缺陷（defect）等多種實驗方法，在物理化學性質都出現變化。本論文利用 Landauer-Keldysh 方程結合非穩態格林函數（NEGF）運算模擬實驗，透過考慮引入無序系統（disordered system）及線缺陷（line defect），試圖探討石墨烯在高磁場下的量子霍爾效應（Quantum hall effect）及電阻呈現變化的 Shubnikov-de Hass （SdH）振盪。 | zh_TW |
| dc.description.abstract | Graphene is a well-known two-dimensional material. Recently, researchers pursuit in developing controllable method to tune the properties of graphene in order to make it prior to existing product in semiconductor industry. Substitution of graphene such as N-doped graphene shows interesting properties compared with pristine graphene. The quantum hall effect can be presented for pristine graphene devices in lots of experiments. While N-doped graphene displays a different phenomena under high external magnetic field, the magneto-resistance (MR) appears to have enhanced the Shubnikov-de Hass (SdH) oscillation but decrease the oscillation frequency. The thesis focus on the transport properties and also SdH oscillation for graphene constructed by tight binding model and discuss the physical phenomena while considering disordered potentials or line defects. The transport properties are analyzed by the Landauer-Keldysh formalism by using non-equilibrium Green function (NEGF) technique. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T11:11:28Z (GMT). No. of bitstreams: 1 ntu-105-R03245007-1.pdf: 1890665 bytes, checksum: e785ae76360ee342a4c68f4fabbb6f93 (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 誌謝 i
摘要 ii Abstract iii 1 Introduction 1 1.1 Tight-binding model . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Green function in quantum mechanics . . . . . . . . . . . . . . . . . . . 2 1.3 Adding leads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.4 Landauer-Buttiker formula . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.4.1 Non-local measurement . . . . . . . . . . . . . . . . . . . . . . 6 1.5 Landauer-Keldysh formalism . . . . . . . . . . . . . . . . . . . . . . . . 8 1.6 Disordered system . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Graphene Nanoribbons 10 2.1 Transport Properties in GNRs . . . . . . . . . . . . . . . . . . . . . . . . 10 2.2 Non-equilibrium system of GNRs . . . . . . . . . . . . . . . . . . . . . 13 3 Graphene in external magnetic field 16 3.1 Adding vector potential . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.2 Landau level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.2.1 Shubnikov-de Haas Oscillation . . . . . . . . . . . . . . . . . . . 20 4 Experimental Result 22 4.1 Basic model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.2 Pristine graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.3 Vacancy in graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.4 Graphene with line defects . . . . . . . . . . . . . . . . . . . . . . . . . 29 5 Conclusion 31 Bibliography 32 | |
| dc.language.iso | en | |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | 磁阻 | zh_TW |
| dc.subject | 量子霍爾效應 | zh_TW |
| dc.subject | 舒勃尼科夫-德哈斯振盪 | zh_TW |
| dc.subject | Quantum hall effect | en |
| dc.subject | Graphene | en |
| dc.subject | Shubnikov-de Hass oscillation | en |
| dc.subject | Magneto-resistance | en |
| dc.title | 石墨烯的SdH振盪 | zh_TW |
| dc.title | Shubnikov-de Hass Oscillation in Graphene | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 胡崇德,林育中,陳松賢 | |
| dc.subject.keyword | 磁阻,量子霍爾效應,舒勃尼科夫-德哈斯振盪,石墨烯, | zh_TW |
| dc.subject.keyword | Magneto-resistance,Quantum hall effect,Shubnikov-de Hass oscillation,Graphene, | en |
| dc.relation.page | 33 | |
| dc.identifier.doi | 10.6342/NTU201603528 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2016-08-22 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 應用物理研究所 | zh_TW |
| 顯示於系所單位： | 應用物理研究所 | |
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