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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 王暉(Huei Wang) | |
dc.contributor.author | Yu-Ting Chou | en |
dc.contributor.author | 周昱廷 | zh_TW |
dc.date.accessioned | 2021-06-15T11:10:22Z | - |
dc.date.available | 2017-02-08 | |
dc.date.copyright | 2017-02-08 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-09-22 | |
dc.identifier.citation | [1] T. S. Rappaport, A. Annarnalai, R. M. Buehrer and W. H. Tranter, “Wireless communications: past events and a future perspective”, IEEE Communications Magazine, vol. 40, no. 5, pp. 148-161, 2002.
[2] S. Rangan, T. S.Rappaport, and E. Erkip, “Millimeter-wave cellular wireless networks: potentials and challenges”, Proceedings of the IEEE, vol. 102, no. 3, p.p. 366 – 385, March 2014. [3] A. Hajimiri, “mm-wave silicon ICs: challenges and opportunities”, IEEE Custom Integrated Circuits Conference (CICC), pp. 741-747, 2007. [4] European Southern Observatory website: http://www.eso.org/public/teles-instr/alma/ [5] Atacama Large Millimeter/submillimeter Array website: http://www.almaobservatory.org/en/home [6] David M. Pozar, Microwave and RF Design of Wireless Systems, 1st, John Wiley & Sons Inc., 2000. [7] Guillermo Gonzalez, Microwave Transistor Amplifier Analysis and Design, 2nd, Pearson Prentice, 1996. [8] B. Aja Abelan, et al., “4–12 and 25–34 GHz cryogenic mHEMT MMIC low-noise amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 12, pp. 4080-4088, Dec. 2012. [9] J. Schleeh, N. Wadefalk, P. A. Nilsson, J. P. Starski, and J. Grahn, “Cryogenic broadband ultra-low-noise MMIC LNAs for radio astronomy applications,” IEEE Transactions on Microwave Theory and Techniques, vol. 61, no.2, pp. 871-877, Feb. 2013. [10] You-Tang Lee, Chau-Ching Chiong, Dow-Chih Niu, Huei Wang, “A high gain E-band MMIC LNA in GaAs 0.1-μm pHEMT process for radio astronomy applications,” IEEE 44st European Microwave Conference, pp. 1400-1403, Oct. 2014. [11] Bo-Yu Chen, Chau-Ching Chiong, Huei Wang, “A high gain K-band LNA in GaAs 0.1-µm pHEMT for radio astronomy application,” Asia-Pacific Microwave Conference (APMC), pp. 226-228, Nov. 2013. [12] Wolfgang Wild and John Payne, “ALMA construction project book: chapter 5 ALMA front ends,” Feb. 2001. Available at http://www.cv.nrao.edu/~demerson/almapbk/construc/. [13] D. Shaeffer, et al., “A 1.5-V, 1.5-GHz CMOS low noise amplifier,” IEEE J Solid-state Circuits, vol. 32, pp. 745-759, May 1997. [14] Behzad Razavi, RF Microelectronics, 2nd, Pearson Prentice, 2011. [15] William J. Dally and John W. Poulton, Digital Systems Engineering, Cambridge University Press, 1998. [16] D. Shaeffer, et al., “A 1.5-V, 1.5-GHz CMOS low noise amplifier,” IEEE J Solid-state Circuits, vol. 32, pp. 745-759, May 1997. [17] M. V. Aust, et al., “Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1-μm HEMT technologies,” IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 89-92, June 1996. [18] R. Limacher, et al., “Broadband low-noise amplifiers for K- and Q-band using 0.2 μm InP HEMT MMIC technology,” Proc. IEEE CSIC Symposium Digest, pp. 305-308, Oct. 2004 [19] Shou-Hsien Weng, et al., “Q-band low noise amplifiers using 0.15-um MHEMT process for broadband communication and radio astronomy applications,” IEEE MTT-S International Microwave Symposium Digest, pp. 455-458, June 2008. [20] H.P. Moyer, et al., “Q-Band GaN MMIC LNA using a 0.15μm T-Gate process,” IEEE CSIC Symposium Digest, pp. 99-102, Oct. 2008. [21] S.-H. Weng, et al., “Cryogenic evaluation of a 30-50 GHz 0.15-m MHEMT low noise amplifier for radio astronomy applications,” IEEE 41st European Microwave Conference, pp. 934-937, Oct. 2011. [22] Han-Chih Yeh, et al., “Analysis and design of millimeter-wave low-voltage CMOS cascade LNA with magnetic coupled technique,” IEEE Trans. On Microwave Theory Tech., vol. 60, no. 12, Dec. 2012 [23] Ping-Han Ho, et al., “An ultra low-power Q-band LNA with 50% bandwidth in WIN GaAs 0.1-μm pHEMT process,” Asia-Pacific Microwave Conference Proceedings (APMC), pp. 713-715, Nov. 2013. [24] “Allocations and service rules for the 71-76 GHz, 81-86 GHz and 92-95 GHz bands,” FCC, Washington, DC, USA, FCC 05-45, 2005. [25] “Radio frequency channel arrangements for fixed service systems operating in the bands 71-76 GHz and 81-86 Ghz,” ECC, Copenhagen, Denmark, ECC Recommendation (05) 07, 2009 (revised Dublin) and 2013 (Lugano). [26] J. Wells, “Faster than fiber: the future of Multi-Gb/s wireless,” IEEE Microwave Magazine, vol. 10, no. 3, 2009, pp. 104-112, 2009. [27] J. Wells, Multigigabit Microwave and Millimeter-Wave Wireless Communications, USA: Artech House, 2010. [28] B. Razavi, “Design considerations for direct-conversion receivers,” IEEE Trans. Circuits Syst. II, Analog Digit. Signal Process. , vol. 44, no. 6, pp. 428-435, Jun. 1997. [29] W. H. Lin, H. Y. Yang, J. H. Tsai, T. W. Huang, H. Wang, “1024-QAM high image rejection E-band sub-harmonic IQ modulator and transmitter in 65-nm CMOS process,” IEEE Trans. Microwave Theory & Tech., vol. 61, no. 11, pp. 3974-3985, Nov. 2013. [30] R. Liu, Y. Li, H. Chen and Z. Wang, “EVM estimation by analyzing transmitter imperfections mathematically and graphically,” Analog Integrated Circuits and Signal Processing, pp. 257-262, 2006. [31] J. Kim, W. Choi, Y. Park and Y. Kwon, “60GHz broadband image rejection using varactor tuning,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 381-384, May 2010. [32] J. H. Tsai, “Design of 1.2-V broadband high data-rate MMW CMOS I/Q modulator and demodulator using modified gilbert-cell mixer,” IEEE Trans. Microwave Theory & Tech., vol. 59, no. 5, pp. 1350-1360, May 2011. [33] Y. H. Lin, J. L. Kuo, and H. Wang, “A 60-GHz sub-harmonic IQ modulator and demodulator using drain-body feedback technique,” 7th European Microwave Integrated Circuits Conference (EuMIC), pp. 365-368, Oct. 2012. [34] Z. M. Tsai, H. C. Liao, Y. H. Hsiao, and H. Wang, “V-Band high data-rate I/Q modulator and demodulator with a power-locked loop LO source in 0.15-μm GaAs pHEMT technology,” IEEE Trans. Microwave Theory & Tech., vol. 61, no. 7, pp. 2670-2684, July 2013. [35] C. A. Hsieh, Y. H. Lin, and H. Wang, “A miniature 52-66GHz sub-harmonic IQ demodulator with low LO power in 65-nm CMOS,” Asia-Pacific Microwave Conference (APMC), pp. 1199-1201, Nov. 2014. [36] D. Zhao, and P. Reynaert, “A 3 Gb/s 64-QAM E-band direct-conversion transmitter in 40-nm CMOS,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 177-180, Nov. 2014. [37] M. Cohn, J. E. Degenford, and B. A. Newman, “Harmonic mixing with an antiparalleldiode pair”, IEEE Trans. Microwave Theory and Techniques, vol. 23, no. 8, pp. 667-673, 1975. [38] K. Itoh , T. Yamaguchi , T. Katsura , K. Sadahiro , T. Ikushima , R. Hayashi , F. Ishizu , E. Taniguchi , T. Nishino , M. Shimozawa , N. Suematsu , T. Takagi and O. Ishida, “Integrated even harmonic typedirect conversion receiver for W-CDMA mobile terminals”, IEEE MTT-S Int. Microw. Symp. Dig., pp. 9-12, June 2002 [39] Jun Hashimoto, Kenji Itoh, Mitsuhiro Shimozawa, and Koji Mizuno, “Fundamental limitations on the output power of balanced mixers and even harmonic mixers in modulator operation”, IEEE Trans. Microwave Theory and Techniques, vol. 62, no. 12, pp. 3085-3094, Dec. 2014. [40] H. J. Wei , C. Meng , P. Y. Wu, and K. C. Tsung, “K -band CMOS sub-harmonic resistive mixer with a miniature marchand balun on lossy silicon substrate”, IEEE Microwave Wireless Component Letter, vol. 18, no. 1, pp. 40-42, Jan. 2008. [41] W.-H. Lin, W.-L. Chang, J.-H. Tsai, and Huang, T.-W, “A 30-60GHz CMOS sub-harmonic IQ de/modulator for high data-rate communication system applications”, IEEE Radio and Wireless Symposium (RWS), pp. 462-465, June 2009. [42] M. Goldfarb, Ed Balboni, and John Cavey, “Even harmonic double-balanced active mixer for use in direct conversion receivers”, IEEE J. Solid-State Circuits, vol. 38, pp. 1762-1766, 2003. [43] J. H. Tsai and T. W. Huang, “35-65-GHz CMOS broadband modulator and demodulator with sub-harmonic pumping for MMW wireless gigabit applications”, IEEE Trans. Microwave Theory and Techniques, vol. 55, no. 10, pp. 2075-2085, Oct. 2007. [44] J.-S. Syu and C. Meng, “Low-power sub-harmonic direct-conversion receiver with tunable RF LNA and wideband LO generator at U-NII bands”, IEEE Trans. Microwave Theory and Techniques, vol. 60, no. 3, pp. 555-566, Mar. 2012. [45] W. K. Chong, H. Ramiah, N. Vitee “A 0.12- 2.4-GHz CMOS inductorless high isolation subharmonic mixer with effective current-reuse transconductance”, IEEE Trans. Microwave Theory and Techniques, Vol. 63, no. 8, pp. 2427-2437, Aug. 2015. [46] L. Sheng, J. Jensen, and L. Larson, “A wide-bandwidth Si/SiGe HBT direct conversion sub-harmonic mixer/downconverter”, IEEE Journal of Solid-State Circuits, vol. 35, no. 9, pp. 1329-1337, Sep. 2000. [47] J. Hung et al, “A 77 GHz SiGe sub-harmonic balanced mixer,” IEEE J. Solid-State Circuits, vol. 40, no. 11, pp. 2167-2173, Nov. 2005. [48] Ping-Han Tsai, Che-Chung Kuo, Jing-Lin Kuo, Sofiane Aloui, and Huei Wang, “A 30–65 GHz reduced-size modulator with low LO power using sub-harmonic pumping in 90-nm CMOS technology” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 491-494, June 2012. [49] K. Joardar, “Signal isolation in BiCMOS mixed mode integrated circuits”, Proc. Bipolar/CMOS Circuits Technol. Meeting, pp. 178-181, 1995. [50] J. G. Su, H. M. Hsu, S. C. Wong, C. Y. Chang, T. Y. Huang, and Y. C. Sun, “Improving the RF performance of 0.18-μm CMOS with deep n-well implantation'” IEEE Electron Device Lett., vol. 22, no. 10, pp. 481-483, 2001. [51] Kazuyasu Nishikawa, Kenji Shintani, and Satoshi Yamakawa, “Characteristics of transmission lines fabricated by CMOS process with deep n-well implantation,” IEEE Transactions on Microwave Theory and Tchniques, vol. 54, no. 2, pp. 589-598, Feb. 2006. [52] Jui-Chih Kao, Yuan-Hung Hsiao, Kuang-Sheng Yeh, Chau-Ching Chiong, Yu-Hsuan Lin, Kun-You Lin, and Huei Wang, “A 25-to-45-GHz 45° power divider”, 2013 European Microwave Conference (EuMC), pp. 959-962, Oct. 2013. [53] B. Piernas, K. Nishikawa, T. Nakagawa, H. Hitoshi, and K. Araki, “C Analysis of balanced active doubler for broadband operation - the frequency tuning concept”, IEEE Transactions On Microwave Theory and Tchniques, vol. 50, no.4, pp. 1120-1126, April 2002. [54] Hiroshi Adachi, Mizuki Motoyoshi, Kyoya Takano, Kosuke Katayama, Shuhei Amakawa, Takeshi Yoshida, and Minoru Fujishima, “Design of CMOS resonating push-push frequency doubler”, IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) , June 2014. [55] G. Liu, J. Jayamon, J. Buckwalter and P. Asbeck, “Frequency doublers with 10.2/5.2 dBm peak power at 100/202 GHz in 45nm SOI CMOS,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 271-273, May 2015. [56] M. Yeh, R. Liu, Z. Tsai, and H. Wang, “A miniature low-insertion loss, high power CMOS SPDT switch using floating body technique for 2.4 and 5.2 GHz applications,” IEEE Radio Frequency Integrated Circuits Symposium(RFIC), June 2005. [57] Q. Li Y.P. Zhang, K. S. Yeo, and W. M. Lim, “16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating,” IEEE Transactions On Microwave Theory and Tchniques, vol. 56, pp. 339-345, Feb. 2008. [58] Kian Sen Ang; Robertson, I.D. “Analysis and design of impedance-transforming planar Marchand baluns”, IEEE Transactions On Microwave Theory and Tchniques, Vol. 49, p.p. 402 - 406, Feb. 2001. [59] A. Ghosh, “Millimeter-wave enhanced local area systems: A high-data-rate approach for future wireless networks”, IEEE J. Sel. Areas Commun., vol. 32, no. 6, pp. 1152-1163, 2014. [60] X. Guan, H. Hashemi, and A. Hajimiri, “A fully integrated 24-GHz eight-element phased-array receiver in silicon,” IEEE Journal of Solid State Circuits, vol. 39, no. 12, pp. 2311-2320, Dec. 2004. [61] G. M. Rebeiz and K.-J. Koh, “Silicon RFICs for phased arrays”, IEEE Microwave Magazine, vol. 10, no. 3, pp. 96-103, 2009. [62] A. Natarajan , et al, “A fully-integrated 16-element phased-array receiver in SiGe BiCMOS for 60-GHz communications”, IEEE J. Solid-State Circuits, vol. 46, no. 5, pp. 1059-1075, 2011. [63] S. Kutty, and D. Sen, “Beamforming for millimeter wave communications: an inclusive survey', IEEE Communications Surveys & Tutorials, vol. 18, no. 2, pp. 949 - 973, Second quarter 2016. [64] W. L. Chan and J. R. Long, “A 58-65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply”, IEEE Journal of Solid-State Circuits, vol. 45, pp. 554-564, 2010. [65] A. Chakrabarti and H. Krishnaswamy, “High power, high efficiency stacked mmWave class-E-like power amplifiers in 45 nm SOI CMOS”, Proc. CICC, 2012. [66] D. Zhao and P. Reynaert, “A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS”, IEEE Journal of Solid-State Circuits. vol. 48, no. 10, pp. 2323-2337, 2013. [67] J.-H. Tsai and T.-W. Huang, “A 38–46 GHz MMIC Doherty power amplifier using post-distortion linearization”, IEEE Microw. Wireless Compon. Lett., vol. 17, no. 5, pp. 388-390, 2007. [68] S. Kulkarni, and et al, “A push-pull mm-wave power amplifier with <0.8∘AM-PM distortion in 40-nm CMOS,” ISSCC Dig. Tech. Papers, pp. 252-253, Feb. 2014. [69] A Sarkar and B. Floyd, “A 28-GHz class-J Power Amplifier with 18-dBm output power and 35% peak PAE in 120-nm SiGe BiCMOS”, IEEE Topical Meeting Silicon Monolithic ICs in RF Systems, pp. 71-73, Jan. 2014. [70] Sherif Shakib, and et al, “A 28GHz efficient linear power amplifier for 5G phased arrays in 28nm bulk CMOS,” ISSCC Dig. Tech. Papers, pp. 352-353, Feb. 2016. [71] K. Datta, and H. Hashemi, “A 29dBm 18.5% Peak PAE mm-Wave Digital Power Amplifier with Dynamic Load Modulation', ISSCC Dig. Tech. Papers, pp. 46-47, 2015. [72] E. Kaymaksut, and P. Reynaert, “Transformer-Based Uneven Doherty Power Amplifier in 90 nm CMOS for WLAN Applications”, IEEE Journal of Solid-State Circuits, vol.47, no. 7, pp. 1659 - 1671, July 2012. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48857 | - |
dc.description.abstract | 此論文依據不同應用的三個毫米波前端電路而分成三個部份論述。
第一部分呈現一個利用0.15微米高速電子遷移率電晶體製程(HEMT)設計應用於天文觀測的Q頻段低雜訊放大器(LNA)。此低雜訊放大器採用π型和補償式匹配結構來達到寬頻的效果,在62.6毫瓦直流功耗下,於28.5 to 50.5 GHz範圍有著23分貝(dB)的增益,而於35 to 50 GHz有著 3.8分貝的雜訊指數(Noise Figure)。 第二部分闡述一個實現在90奈米金氧半場效電晶體製程(CMOS)用於E頻段點對點傳輸的正交解調器(I/Q demodulator)。採用推進式次諧波混頻器(sub-harmonic mixer)的架構,此解調器在26.6毫瓦功耗和4 dBm 本地振盪(LO)能量下達到-3 dB的轉換增益,此外,因為所用的45度訊號分配器有著大小和相位可調節的功能,此解調器有大於40 dBc鏡像抑制比且顯示8.2% 誤差向量幅度(EVM) 16正交幅度調變(QAM)下的高速資料傳輸。 最後一部分是一個以40奈米金氧半場效電晶體製程設計的38-GHz相位陣列系統的功率放大器(PA)。此功率放大器利用類似多赫提(Doherty)的結構在靜態操作下只留有一半的電路載運作,而為了增加增益與提升效率,採用中和電容(neutralization)與變壓器(transformer)匹配的技巧,在67毫瓦直流功耗下, 達到14-dBm的飽和功率(PSAT)、11.5-dBm 的1 dB增益壓縮點功率(OP1dB)、19.3 % 的最大功率附加效率(PAEpeak)、 14 % 的1分貝增益壓縮點功率附加效率(PAE@OP1dB)和 8 % 的飽和功率回推6分貝功率附加效率(PAE@back-off 6dB)。 | zh_TW |
dc.description.abstract | This thesis is divided into three parts by three critical MMW front-end circuits for different applications.
The first part presents a Q-band LNA using 0.15-μm GaAs pHEMT process for the radio astronomy applications. By adopting π-type and compensated matching networks, the LNA achieves broadband performance. The LNA attains 23 dB small signal gain from 28.5 to 50.5 GHz and a measured noise figure of 3.8 dB from 35 to 50 GHz with 62.6-mW dc power consumption. The second part exhibits an I/Q demodulator in 90-nm CMOS process for E-band point-to-point communication. The demodulator attains -3-dB conversion gain with only 26.6-mW power consumption and 4-dBm LO power by adopting push-push based sub-harmonic mixers. With the tunable capability of the 45° power divider, the demodulator achieves outstanding IRR higher than 40 dBc from 76 to 88 GHz, and demonstrates gigabit data rate transmission of 8.2% EVM 16-QAM modulation. The last part illustrates a PA using 40-nm CMOS process for a 38-GHz phased-array system. By using quasi-Doherty core, the proposed PA leaves only half of the combined paths in quiescent state. Besides, neutralization techniques and transformer matching are applied to the PA for gain and efficiency enhancement respectively. The PA attains 14-dBm PSAT, 11.5-dBm OP1dB, 19.3 % PAEpeak, 14 % PAE@OP1dB, and 8 % PAE@back-off 6dB in 67-mW dc power consumption. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T11:10:22Z (GMT). No. of bitstreams: 1 ntu-105-R03942007-1.pdf: 12464667 bytes, checksum: 08a1b81c7989c8c3ed786e1a91210159 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 誌謝 i
中文摘要 iii ABSTRACT v CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xvii Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 3 1.2.1 Q-Band LNAs 3 1.2.2 MMW I/Q Demodulators 3 1.2.3 CMOS Medium-Power PA with Low Quiescent Power Consumption 4 1.3 Contributions 6 1.4 Thesis Organization 7 Chapter 2 A Q-band LNA with 55.7% Bandwidth for Radio Astronomy Applications in 0.15-μm GaAs pHEMT Process 9 2.1 Introduction 9 2.1.1 Project Overview and Circuit Specification 9 2.2 Circuit Design 12 2.2.1 Selection of Device Sizes and Biases 12 2.2.2 Source Degeneration 18 2.2.3 Bandwidth Extension Techniques in Matching and Bypass circuit 21 2.2.4 Circuit Schematic and Simulation Results 24 2.3 Experimental Results 30 2.4 Discussion 32 2.5 Summary 33 Chapter 3 A High Image Rejection E-Band Sub-Harmonic IQ demodulator with Low Power Consumption in 90-nm CMOS Process 35 3.1 Introduction 35 3.1.1 Image Rejection for Down Conversion 37 3.1.2 Sub-Harmonic Mixer Topologies 45 3.2 Circuit Design 48 3.2.1 Tunable 45∘phase shifter 49 3.2.2 Proposed Sub-Harmonic Down-Conversion Mixer 53 3.2.3 Simulation Results 63 3.3 Experiment Results 70 3.4 Discussion 81 3.4.1 Mismatch of Conversion Gain 81 3.4.2 Mismatch of IRR and EVM 83 3.5 Summary 83 Chapter 4 A 38-GHz Medium PA with 67.8-mW Quiescent Power Consumption in 40-nm CMOS Process. 85 4.1 Introduction 85 4.1.1 Project Overview and Circuit Specification 85 4.2 Circuit Design 88 4.2.1 Power-Stage Design and Output Matching 89 4.2.2 Driver-Stage Design, Inter-Stage Matching, and Input Matching 103 4.2.3 Circuit Schematic and Simulation Results 108 4.3 Experiment Results 115 4.4 Discussion 119 4.5 Summary 120 Chapter 5 Conclusions 123 References 124 | |
dc.language.iso | en | |
dc.title | 應用於毫米波之低雜訊放大器、正交解調器與功率放大器之研製 | zh_TW |
dc.title | Research of Low Noise Amplifier, I/Q Demodulator, and Power Amplifier for Millimeter-wave Applications | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃天偉(Tian-Wei Huang),林坤佑(Kun-You Lin),盧信嘉(Hsin-Chia Lu),章朝盛(Chau-Ching Chiong) | |
dc.subject.keyword | 低雜訊放大器,寬頻,正交解調器,鏡像抑制比,次諧波混頻器,功率放大器,類多赫提,變壓器,Q頻段,E頻段,38-GHz,高速電子遷移率電晶體,金氧半場效電晶體, | zh_TW |
dc.subject.keyword | low noise amplifier (LNA),broadband,I/Q demodulator,IRR,sub-harmonic mixer,power amplifier (PA),quasi-doherty,transformer combing,Q-band,E-band,38-GHz,HEMT,CMOS, | en |
dc.relation.page | 128 | |
dc.identifier.doi | 10.6342/NTU201603566 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-09-23 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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