請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48671完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 盧奕璋(Yi-Chang Lu) | |
| dc.contributor.author | Yi-Ying Hsieh | en |
| dc.contributor.author | 謝易穎 | zh_TW |
| dc.date.accessioned | 2021-06-15T07:07:37Z | - |
| dc.date.available | 2013-12-10 | |
| dc.date.copyright | 2010-12-10 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-11-16 | |
| dc.identifier.citation | [1] F. Svelto, S. Deantoni, R. Castello, “A 1.3 GHz Low-Phase Noise Fully Tunable CMOS LC VCO,” IEEE Journal of Solid-State Circuits, vol. 35, no. 3, pp. 356 – 361, Mar. 2000.
[2] T. I. Ahrens, and T. H. Lee, “A 1.4-GHz 3-mW CMOS LC Low Phase Noise VCO Using Tapped Bond Wire Inductance,” In Proceedings International Symposium Low Power Electronics and Design, Aug. 1998, pp. 16–19. [3] J. J. Kucera, “Wideband BiCMOS VCO for GSM/UMTS Direct Conversion Receivers,” In IEEE ISSCC Digest Technical Papers, San Francisco, California, USA, 2001, pp. 374–375, 466. [4] F. Svelto and R. Castello, “A Bond-Wire Inductor-MOS Varactor VCO Tunable from 1.8 to 2.4 GHz,” IEEE Transactions Microwave Theory Techniques, vol. 50, no. 1, pp. 403–407, Jan. 2002. [5] N. J. Oh, and S. G. Lee, “11-GHz CMOS Differential VCO with Back-Gate Transformer Feedback,” IEEE Microwave and Wireless Components Letters, Vol. 15, no. 11, pp. 733 – 735, Nov. 2005. [6] S. Ko, J. G. Kim, T. Song, E. Yoon, and S. Hong, “20 GHz Integrated CMOS Frequency Sources with a Quadrature VCO Using Transformers,” In IEEE Radio Frequency Integrated Circuits (RFIC) Symposium 2004 Digest of Papers, Jun. 2004, pp. 269 – 272. [7] B. Park, K. H. Ahn, S. Choi, and S. Hong, “A 12-GHz Fully Integrated Cascode CMOS VCO with Q-Enhancement Circuit,” IEEE Microwave and Wireless Components Letters, Vol. 18, no. 2, pp. 133 – 135, Feb. 2008. [8] V. Manan, and S. I. Long, “A Low Power and Low Noise P-HEMT Ku Band VCO,” IEEE Microwave and Wireless Components Letters, Vol. 16, no. 3, pp. 131 – 133, Mar. 2006. [9] H. C. Chen, and H. W. Chiu, “VCO with Miller Theorem-Based Varactors,” Electronics Letters, vol. 46, no. 14, pp. 990 – 991, Jul. 2010. [10] S. Wu, and E. I. El-Masry, “A 1.8-2GHz VCO with Automatic Compensation for Bond Wire Inductance Variation,” In Proceedings 7th International Conference on Solid-State and Integrated Circuits Technology, vol. 2, Oct. 2004, pp. 1325 – 1328. [11] K. J. Kim, K. H. Ahn, and T. H. Lim, “Low Phase Noise Bond Wire VCO for DVB-H, ” In 4th IEEE International Symposium on Electron Design, Test and Applications, Hong Kong, Jan. 2008, pp. 103-106. [12] L. H. Lu, H. H. Hsieh, and Y. T. Liao, “A Wide Tuning-Range CMOS VCO with a Differential Tunable Active Inductor,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 9, pp. 3462 – 3468, Sept. 2006. [13] G. Gonzalez, Microwave Transistor Amplifiers – Analysis and Design, 2nd edition, Prentice Hall, 1996, ch. 5. [14] M.Steyaert, and J. Craninckx, “1.1 GHz Oscillator Using Bondwire Inductance,” Electronics Letters, vol. 30, no. 3, pp. 244 – 245, Feb. 1994. [15] C. -M. Hung, and K. K. O, “A Packaged 1.1-GHz CMOS VCO with Phase Noise -126 dBc/Hz at 600-KHz Offset,” IEEE Journal of Solid-State Circuits, vol. 35, no. 1, pp. 100 – 103, Jan. 2000. [16] J. Y. Chuang, S. P. Tseng, and J. A. Yeh, “Radio Frequency Characterization of Bonding Wire Interconnections in a Molded Chip,” Electronic Components and Technology Conference, vol. 1, Jun. 2004, pp. 392 – 399. [17] B. D. Muer, N. Itoh, M. Borremans, and M. Steyaert, “A 1.8 GHz Highly-Tunable Low-Phase-Noise CMOS VCO,” In Proceedings of the IEEE Custom Integrated Circuits Conference, Orlando, May 2000, pp. 585 – 588. [18] A. D. Berny, A. M. Niknejad, and R. G. Meyer, “A 1.8-GHz LC VCO with 1.3-GHz Tuning Range and Digital Amplitude Calibration,” IEEE Journal of Solid-State Circuits, vol. 40, no. 4, pp. 909 – 917, Apr. 2005. [19] M. A. Margarit, J. L. Tham, R. G. Meyer, and M. J. Deen, “A Low-Noise, Low-Power VCO with Automatic Amplitude Control for Wireless Applications,” IEEE Journal of Solid-State Circuits, vol. 34, no. 6, pp. 761 – 771, jun. 1999. [20] J. W. M. Rogers, D. Rahn, and C. Plett, “A Study of Digital and Analog Automatic-Amplitude Control Circuitry for Voltage-Controlled Oscillators,” IEEE Journal of Solid-State Circuits, vol. 38, no. 2, pp. 352 – 356, Feb. 2003. [21] T. H. Lin, R. L. Hsu, C. L. Li, and Y. C. Tseng, “A 5 GHz, 192.6 dBc/Hz/mW FOM LC–VCO System with Amplitude Control Loop and LDO Voltage Regulator in 0.18 μm CMOS,” IEEE Microwave and Wireless Components Letters, vol. 17, no. 10, pp. 730 – 732, Oct. 2007. [22] T. O. Dickson, M. -A. LaCroix, S. Boret, D. Gloria, R. Beerkens, and S. P. Voinigescu, “30–100-GHz Inductors and Transformers for Millimeter-Wave (Bi)CMOS Integrated Circuits,” IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 1, pp. 123 – 133, Jan. 2005. [23] J. R. Long, and M. A. Copeland, “The Modeling, Characterization, and Design of Monolithic Inductors for Silicon RF IC's,” IEEE Journal of Solid-State Circuits, vol. 32, no. 3, pp. 357 – 369, Mar. 1997. [24] K. Kamogawa, K. Nishikawa, I. Toyoda, T. Tokumitsu, and M. Tanaka, “A Novel High-Q and Wide-Frequency-Range Inductor Using Si 3-D MMIC Technology,” IEEE Microwave and Guided Wave Letters, vol. 9, no. 1, pp. 16 – 18, Jan. 1999. [25] C. P. Yue, and S. S. Wong, “On-Chip Spiral Inductors with Patterned Ground Shields for Si-based RF IC's,” Symposium on VLSI Circuits Digest of Technical Papers, Jun. 1997, pp. 85 – 86. [26] H. Shingematsu, T. Hirose, F. Brewer, and M. Rodwell, “Millimeter-Wave CMOS Circuit Design,” IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 2, pp. 472 – 477, Feb. 2005. [27] C. Cao, and K. K. O, “Millimeter-Wave Voltage-Controlled Oscillators in 0.13μm CMOS Technology,” IEEE Journal of Solid-State Circuits, vol. 41, no. 6, pp. 1297 – 1304, Jun. 2006. [28] J. J. Rael, and A. A. Abidi, “Physical Processes of Phase Noise in Differential LC Oscillators,” In Proceedings of The IEEE Custom Integrated Circuits Conference, Orlando, May 2000, pp. 569 – 572. [29] G. Niu, Z. Jin, J. D. Cressler, R. Rapeta, A. J. Joseph, and D. Harame, “Transistor Noise in SiGe HBT RF Technology,” IEEE Journal of Solid-State Circuits, vol. 36, no. 9, pp. 1424 – 1427, Sept. 2001. [30] B. Razavi, Design of Analog CMOS Integrated Circuits, 1st ed. McGRAW-HILL, 2003. [31] R. G. Freitag, “A Unified Analysis of MMIC Power Amplifier Stability,” In IEEE MTT-S International Microwave Symposium Digest, vol. 1, Albuquerque, NM, Jun. 1992, pp. 297 – 300. [32] R. G. Freitag, S. H. Lee, D. M. Krafcsik, D. E. Dawson, and J. E. Degenford, “Stability and Improved Circuit Modeling Considerations for High Power MMIC Amplifiers,” In IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest, New York, May 1988, pp. 125 – 128. [33] P. C. Huang, R. C. Liu, H. Y. Chang, C. S. Lin, M. F. Lei, H. Wang, C. Y. Su, and C. L. Chang, “A 131-GHz Push-Push VCO in 90-nm CMOS Technology,” in IEEE Radio Frequency Integrated Circuits Symposium Digest, Jun. 2005, pp. 613- 616. [34] P. C. Huang, M. D. Tsai, G. D. Vendelin, H. Wang, C. H. Chen, and C. S. Chang, “A Low-Power 114GHz Push-Push CMOS VCO Using LC Source Degeneration,” IEEE Journal of Solid-State Circuits, vol. 42, no. 6, pp. 1230 – 1239, Jun. 2007. [35] L. M. Franca-Neto, R. E. BiShop, and B. A. Bloechel, “64 GHz and 100 GHz VCOs in 90 nm CMOS Using Optimum Pumping Method,” IEEE International Solid-State Circuit Conference Digest, vol.1, Feb. 2004, pp. 444 – 538. [36] H. H. Hsieh, and L. H. Lu, “A 63-GHz Voltage-Controlled Oscillator in 0.18-μm CMOS,” IEEE Symposium on VLSI Circuit, Kyoto, Jun. 2007, pp. 178 – 179. [37] R. C. Liu, H. Y. Chang, C. H. Wang, H. Wang, “A 63GHz VCO Using a Standard 0.25um CMOS Process,” In IEEE International Solid-State Circuits Conference Digest, vol. 1, Feb. 2004, pp. 446 – 447. [38] P. Adreani, and S. Mattisson, “On The Use of MOS Varactor in RF VCO’s,” IEEE Journal of Solid-State Circuits, vol. 35, no. 6, pp. 905 – 910, Jun. 2000. [39] http://www.sonnet.com [40] T. H. Lee, and A. Hajimiri, “Oscillator Phase Noise : a Tutorial,” IEEE Journal of Solid-State Circuits, vol. 35, no. 3, pp. 326 – 336, Mar. 2000. [41] J. Y. Lee, H. Kim, S. H. Lee, and H. K. Yu, “A 48 GHz 196 dB-FOM LC VCO with Double Cap-Degeneration Negative-Resistance Cell,” IEEE Microwave and Wireless Components Letters, vol. 18, no. 5, pp. 341 – 343, May 2008. [42] H. Wang, “A 50 GHz VCO in 0.25μm CMOS,” In IEEE International Solid-State Circuits Conference Digest, San Francisco, Feb. 2001, pp. 372 – 373. [43] R. Ludwig, and G. Bogdanov, RF Circuit Design Theory and Applications, 2nd ed. Pearson Education, 2009. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48671 | - |
| dc.description.abstract | 本篇論文我們使用CMOS的製程實現壓控振盪器，並且提出製程偵測的技巧，偵測振盪器的製程狀態。除了製程偵測的振盪器，本篇論文還設計了雙推式振盪器當做高頻訊號源使用，雙推式的架構能夠振盪高於電晶體的電流增益截止頻率，適合於設計高頻的振盪器。
第一個壓控振盪器使用0.18μm CMOS製程設計，電感我們採用外部磅線式，磅線有很高的品質因數且不佔晶片面積，缺點是電感值的漂移很大，為了偵測振盪器電晶體的製程，我們設計了製程偵測電路。量測結果壓控振盪器頻率涵蓋範圍600MHz，未使用製程偵測，電流全部打開的情況，晶片消耗4.2mW的功率，相位雜訊-108.56(dBc/Hz)@1MHz；使用製程偵測器後，功率消耗變為2.64mW，相位雜訊-106.31(dBc/Hz)@1MHz，增加了2(dBc/Hz)，但是功率消耗為原本的63%，同時振盪器的振盪頻率也是目前磅線設計中最快的。 接著我們修改偵測器的內部電路，使用90nm CMOS製程設計振盪器，因為0.18μm的設計採用三極管區偏壓的方式，消耗較大電流，90nm的設計使用飽和區偏壓方式，由製程偵測器調整尾端電晶體閘極端的偏壓。晶片設計採用內部電感方式，模擬結果振盪器能夠振盪在11GHz，有720MHz的振盪頻率範圍。在1MHz處，模擬出11GHz的相位雜訊為-104.5(dBc/Hz)，消耗功率大約1mW。 最後是高頻訊號源的設計，雙推式高頻訊號源使用90nm CMOS製程設計，使用交叉耦合式負電阻，給予0.9伏特的供應電壓。經過量測，實際的振盪頻率為111GHz，輸出振幅-23.1dBm，相位雜訊-95.8(dBc/Hz)@1MHz。 | zh_TW |
| dc.description.abstract | In this thesis, three voltage-control-oscillators (VCOs) are designed. The first two VCOs equip process variation monitors to improve circuit performance. The other one is a push-push VCO that can operate faster than transistor unit current-gain frequency (ft).
The first work uses 0.18μm CMOS process. Since bond wire inductors have high quality factors without occupying much chip area, we use them to implement the VCO. A triode biased tail current transistor is used in this VCO. Since the triode biased transistor suffers from large process variations, a process variation monitor circuit is designed and implemented to solve the issue. This VCO has the tuning range of 600MHz. Without any calibration, VCO core power consumption is 4.2mW, and it has phase noise -108.56(dBc/Hz) at 1MHz offset. After calibrated by the process variation monitor, VCO core power consumption is 2.64mW and measured phase noise -106.31 dBc/Hz at 1MHz offset. Power consumption after calibration is reduced to 63% only, and this design has the highest output frequency among recently reported bond wire VCOs. Then a new process variation monitor is designed using 90nm CMOS process. Since using triode biasing scheme usually needs more power, this 90nm CMOS VCO is biased in the saturation region instead. The gate bias of the tail current transistor is tuned by the process variation monitor. This design uses inner inductors and oscillates at 11GHz. From the simulation results, the tuning range of the oscillator is 720MHz, phase noise is -104.5 dBc/Hz at 1MHz offset, and the power consumption is 1mW. Finally, the design of a cross-coupled push-push VCO in 90nm CMOS is presented. The supply voltage is 0.9V. The measurement result of the push-push port is 111GHz. Output power is -23.1dBm, and phase noise is -95.8(dBc/Hz) at 1MHz offset. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T07:07:37Z (GMT). No. of bitstreams: 1 ntu-99-R96943144-1.pdf: 1241377 bytes, checksum: 374fc4f4911cc476b967501d2f899426 (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | 第一章
簡介.........................................1 1.1 設計動機與背景 ...........................1 1.2 文獻研究..................................2 1.3 研究重點..................................4 1.4 章節概述..................................5 第二章 振盪器基本原理................................6 2.1 LC振盪器基本原理..........................6 2.2 交叉耦合式LC壓控振盪器....................9 2.3 相位雜訊..................................11 2.4 相位雜訊模型..............................12 2.5 尾端電晶體雜訊 ............................14 第三章 一個使用溫度與製程漂移偵測器的節能壓控振盪器..16 3.1 製程漂移偵測器 ............................16 3.1.1 環形振盪器...............................17 3.1.2 五位元計數器 ............................18 3.1.3 脈衝產生器..............................19 3.1.4 五位元閂鎖器 ............................20 3.1.5 二進位轉溫度計碼電路....................21 3.1.6 製程偵測器架構與時脈操作................22 3.2 電感與變容器設計..........................25 3.2.1 磅線電感設計............................25 3.2.2 變容器設計..............................29 3.3 0.18μm壓控振盪器設計......................30 3.4 製程偵測器模擬結果........................34 3.5 印製電路板製作 ............................36 3.6 量測結果..................................37 第四章 一個自動調整偏壓的製程偵測壓控震盪器..........41 4.1 製程漂移偵測器的改良......................41 4.1.1 全P型環形振盪器.........................42 4.1.2 五位元計數器............................43 4.1.3 二進位轉溫度計碼電路....................44 4.1.4 製程偵測器架構..........................45 4.2 電感與變容器設計..........................46 4.3 90nm壓控振盪器設計........................48 4.3.1 電阻熱雜訊模擬..........................51 4.4 尾端電晶體轉導模擬結果....................52 第五章 雙推式壓控振盪器設計..........................53 5.1 雙推式壓控振盪器基本原理..................53 5.2 雙推式壓控振盪器設計......................55 5.3 量測結果..................................59 第六章 結論..........................................61 參考文獻......................................62 | |
| dc.language.iso | zh-TW | |
| dc.subject | 製程偵測器 | zh_TW |
| dc.subject | 磅線 | zh_TW |
| dc.subject | 壓控振盪器 | zh_TW |
| dc.subject | 相位雜訊 | zh_TW |
| dc.subject | process variation monitor | en |
| dc.subject | Bondwire | en |
| dc.subject | voltage-controlled oscillator | en |
| dc.subject | phase noise | en |
| dc.title | 壓控振盪器與製程漂移偵測設計 | zh_TW |
| dc.title | Voltage-Controlled Oscillators and Process Variation Monitors | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李泰成(Tai-Cheng Lee),陳信樹(Hsin-Shu Chen),呂良鴻(Liang-Hung Lu) | |
| dc.subject.keyword | 磅線,壓控振盪器,相位雜訊,製程偵測器, | zh_TW |
| dc.subject.keyword | Bondwire,voltage-controlled oscillator,phase noise,process variation monitor, | en |
| dc.relation.page | 66 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-11-16 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電機工程學研究所 | zh_TW |
| 顯示於系所單位： | 電機工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-99-1.pdf 未授權公開取用 | 1.21 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。