請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48421完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳永芳(Yang-Fang Chen) | |
| dc.contributor.author | Cih-Su Wang | en |
| dc.contributor.author | 王慈甦 | zh_TW |
| dc.date.accessioned | 2021-06-15T06:56:09Z | - |
| dc.date.available | 2011-02-20 | |
| dc.date.copyright | 2011-02-20 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-02-09 | |
| dc.identifier.citation | Chapter 1
1. X. F. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, Nature (London) 421, 241 (2003). 2. S. S. Wang, E. Joselevich, A. T. Wooley, C. L. Cheung, and C. M. Lieber, Nature (London) 394, 52 (1998). 3. X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature (London) 409. 66 (2001). 4. H. Cao, Y. G. Zhao, S. T. Ho, E. W. Seelig, Q. H. Wang, and R. P. H. Chang, Phys. Rev. Lett. 82, 2278 (1999). 5. S. F. Yu, C. Yuen, and S. P. Lau, W. I. Park, and G. C. Yi, Appl. Phys. Lett. 84, 3241 (2004). 6. H. C. Hsu, C. Y. Wu, and W. F. Hsieh, J. Appl. Phys. 97, 064315 (2005). 7. H. Q. Yan, J. Johnson, M. Law, R. R. He, K. Knutsen, J. R. McKinney, J. Pham, R. Saykally, and P. D. Yang, Adv. Mater. (Weinheim, Ger.) 15, 1907 (2003). 8. V. S. Letokhov, Sov. Phys. JETP 26, 835 (1968). 9. D. S. Wiersma and Lagendijk, Phys. Rev. E 54, 4256 (1996). 10. S. John and G. Pang, Phys. Rev. A 54, 3642 (1996). 11. L. Florescu and S. John, Phys. Rev. Lett. 93, 013602 (2004). 12. H. Cao, Y. G. Zhao, S. T. Ho, E. W. Seelig, Q. H. Wang, and R. P. H. Chang, Phys.Rev. Lett. 82, 2278 (1999). 13. R. M. Laine, S. C. Rand, T. Hinklin, and G. R. Williams, US Patent 6,656,588 (2003). 14. J. B. Baxter, F. Wu, and E. S. Aydil, Appl. Phys. Lett. 83, 3797 (2003). 15. L. S. Mende and J. L. MacManus-Driscoll, Mater. Today 10 40 (2007). 16. N. E. Hsu, W. K. Hung, and Y. F. Chen, J. Appl. Phys. 96, 4671 (2004). 17. H. Y. Lin, Y. Y. Chou, C. L. Cheng, and Y. F. Chen, Opt. Express 15, 13832 (2007). 18. C. Berney and G. Danuser, Biophys. J. 84, 3992 (2003). Chapter 2 2.1 1. S. Feng, C. Kane, P. A. Lee, and A. D. Stone, Phys. Rev. Lett. 61, 834 (1988). 2. F. Koenderink, A. Lagendijk, and W. L. Vos, Phys. Rev. B 72, 153102 (2005). 3. V. S. Letokhov, Zh. Eksp. Teor. Fiz. 53, 1442 (1967); Sov. Phys. JETP 26, 835 (1968). 4. D. S. Wiersma and A. Lagendijk, Phys. Rev. E 54 4256 (1996). 5. V. M. Markushev, V. F. Zolin, and Ch. M. Briskina, Zh. Prikl. Spektrosk. 45, 847 (1986). 6. C. Gouedard, D. Husson, C. Sauteret, F. Auzel, and A. Migus, J. Opt. Soc. Am. B 10, 2358 (1993). 7. N. M. Lawandy, R. M. Balachandran, A. S. L. Gomes, and E. Sauvain, Nature 368, 436 (1994). 8. W. L. Sha, C. H. Liu, and P. R. Alfano, Opt. Lett. 19, 1922 (1994). 9. D. S. Wiersma, M. P. van Albada, and A. Lagendijk, Nature 373, 203 (1995). 10. N. M. Lawandy and R. M. Balachandran, Nature 373, 204 (1995). 11. J. Martorell, R. M. Balachandran, and N. M. Lawandy, Opt. Lett. 21, 239 (1996). 12. S. John, Phys. Rev. Lett. 53, 2169 (1984). 13. P. W. Anderson, Phil. Mag. B 52, 505 (1985). 14. A. Lagendijk, M. van Albada, and M. B. van der Mark, Physica A 140, 183 19 (1986). 15. P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985). 16. E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). 17. H. Cao et al., Phys. Rev. Lett. 82, 2278 (1999). 18. X.Y.Jiang, and C. M. Soukoulis, Phys. Rev. Lett. 85,70 (2000). 19. H. Cao et al., Phys. Rev. Lett. 84, 5584 (2000). 20. C. Vanneste, and P. Sebbah, Phys. Rev.Lett. 87, 183903 (2001). 21. P. Pradhan, and N. Kumar, Phys. Rev. B 50, 9644 (1994). 22. R. M. Laine, S. C. Rand, T. Hinklin, and G. R. Williams, US Patent 6,656,588 (2003). 23. J. Dubois, and S. la Rochelle, US Patent 5,966,227 (1999). 24. R. C. Polson, and Z. V. Varden, Appl. Phys. Lett. 85, 1289 (2004). 25. R. Choe et al., Med. Phys. 32, 1128 (2005). 2.2-2.5 1. K. Seeger, Semiconducror Physics: An Introduction, 4th ed, Springer (1989). 2. C. Kittel, Introduction to Solid State Physics, 7th ed (1996). 3. C. Berney and G. Danuser, Biophys J 84, 3992 (2003). 4. L. Esaki and R. Tsu, IBM J. Res. Devel. 14, 61 (1970). 5. G. W. Gordaon, G. Berry, X. H. Liang, B. Levine, and B. Herman, Biophys J. 74, 2702 (1998). 6. C. D. Hu, Y. Chinenov, and T. K. Kerppola, Mol. Cell 9, 789 (2002). 7. J. R. Silvius and I. R. Nabi, Molec. Membr. Bio. 23, 5 (2006). Chapter 3 1. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964). 2. J. Westwater, D. P. Gosain, S. Tomiya, and S. Usui, J. Vac. Sci. Technol. B 15, 554 (1997). 3. A. M. Morales and C.M. Lieber, Science 279, 208 (1998). 4. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001). 5. Y. Q. Zhu, W.K.Hsu, M. Terrones, N. Grobert, H. Terrones, J. P. Hare, H. W. Kroto, and D. R. M. Walton, J. Mater. Chem. 8, 1859 (1998). 6. Z. Q. Liu, S. S. Xie, L. F. Sun, D. S. Tang, W. Y, Zhou, C. Y. Wang, W. Liu, Y. B. Li, X. P. Zhou, and G. Wang, J. Mater. Res. 16, 683 (2001). 7. L. Skuja, J. Non-Cryst. Solids 239, 16 (1998). 8. Y. C. Choi, W. S. Kim, Y. S. Park, S. M. Lee, D. J. Bae, H. Y. Lee, G. S. Park, W. B. Choi, N. S. Lee, and J. M. Kim, Adv. Mater. 12, 746 (2000). 9. X. C. Wu, W. H. Song, W. D. Huang, M. H. Pu, B. Zhao, Y. P. Sun, and J. J. Du, Chem. Phys. Lett. 328, 5 (2000). 10. Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 291, 1947 (1956). 11. S. S. Brenner and G. W. Dears, Acta Met. 4, 268 (1956). 12. H. Z. Zhang, Y. C. Kong, Y. Z. Wang, X. Du, Z. G. Bai, J. J. Wang, D. P. Yu, Y. 55 Ding, Q. L. Huang, and S. Q. Feng, Solid State Comm. 109, 677 (1999). 13. G. I. Goldstein, D. E. Newbury, P. Echlin, D. C. Joy, C. Fiori, and E. Lifshin, Plenum Press, New York and London (1981). 14. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer, 2001. 15. H. Y. Lin, Y. Y. Chou, C. L. Cheng, and Y. F. Chen, Opt. Express 15, 13832 (2007). 16. T. Ohsaka, F. Izumi, and Y. Fujiki, J. Raman Spec. 7, 321 (1978). 17. R. A . Strabling, and P. C. Klipstein, Growth and Characterization of Semiconductors. (Adam Hilger: September 1989). 18. S. Perkowitz, Optical Characterization of Semiconductors: Infared, Raman, and Photoluminescence Spectroscopy. (London; San Diego: Academic Press, 1993). Chapter 4 1. V. S. Letokhov, Sov. Phys. JETP 26, 835 (1968). 2. N. M. Lawandy, R. M. Balachandran, A. S. L. Gomes, and E. Sauvain, Nature (London) 368, 436 (1994). 3. D. S. Wiersma and A. Lagendijk, Phys. Rev. E 54, 4256 (1996). 4. H. Cao, Y. G. Zhao, H. C. Ong, S. T. Ho, J. Y. Dai, J. Y. Wu, and R. P. H. Chang, Appl. Phys. Lett. 73, 3656 (1998); H. Cao, Y. G. Zhao, S. T. Ho, W. Seelig, Q. H. Wang, and R. P. H. Chang, Phys. Rev. Lett. 82, 2278 (1998). 5. S. V. Frolov, Z. V. Vardeny, and K. Yoshino, Phys. Rev. B 57, 9141 (1999); T. V. Shahbazyan, M. E. Raikh, and Z. V. Vardeny, Phy. Rev. B 61, 13266 (2000). 6. D. Wiersma, Nature 406, 132 (2000). 7. X. F. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, Nature (London) 421, 241 (2003). 8. X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature (London) 409, 66 (2001). 9. N. E. Hsu, W. K. Huang, and Y. F. Chen, J. Appl. Phys. 96, 4671 (2004). 10. H. Y. Lin, C. L. Cheng, Y. Y. Chou, L. L. Huang, and Y. F. Chen, Opt. Express 14, 2372 (2006). 11. H. Cao, Y. G. Zhao, S. T. Ho, E. W. Seelig, Q. H. Wang, and R. P. H. Chang, 72 Phys. Rev. Lett. 82, 2278 (1999). 12. S. F. Yu, C. Yuen, and S. P. Lau, W. I. Park, and G. C. Yi, Appl. Phys. Lett. 84, 3241 (2004). 13. H. C. Hsu, C. Y. Wu, and W. F. Hsieh, J. Appl. Phys. 97, 064315 (2005). 14. H. Q. Yan, J. Johnson, M. Law, R. R. He, K. Knutsen, J. R. McKinney, J. Pham, R. Saykally, and P. D. Yang, Adv. Mater. (Weinheim, Ger.) 15, 1907 (2003). 15. J. M. Lin, C. L. Cheng, H. Y. Lin, and Y. F. Chen, Opt. Lett. 31, 3173 (2006). 16. H. Y. Lin, Y. Y. Chou, C. L. Cheng, and Y. F. Chen, Opt. Express 15, 13832 (2007). 17. L. J. Tzeng, C. L. Cheng, and Y. F. Chen, Opt. Lett. 33, 569 (2008). 18. T. H. Lin, T. T. Chen, C. L. Chung, H. Y. Lin, and Y. F. Chen, Opt. Express 17, 4342 (2009). 19. C. Berney and G. Danuser, Biophys. J. 84, 3992 (2003). 20. J. Shi, J. Chen, Z. Fang, T. Chen, Y. Lian, X. Wang, and C. Li, J. Phys. Chem. C 111, 693 (2007). 21. H. Nakajima, T. Mori, and M. Watanabe, J. Appl. Phys. 96, 925 (2004). 22. G. Wakefield, J. Stott, and J. Hock, SÖFW J. 131, 46 (2005). 23. S. Z. Fan, X. Y. Zhang, Q. P. Wang, C. Zhang, Z. P. Wang, and R. J. Lan, J. Phys. D: Appl. Phys. 42, 015105 (2009). 73 24. A. Umar, S. H. Kim, Y. S. Lee, K. S. Nahm, and Y. B. Hahn, J. Crystal Growth 282, 131 (2005). 25. T. Ohsaka, F. Izumi, and Y. Fujiki, J. Raman Spec. 7, 321 (1978). 26. V. G. Kozlov, V. Bulovic, P. E. Burrows, M. Baldo, V. B. Khalfin, G. Parthasarathy, and S. R. Forrest, J. Appl. Phys. 84, 4096 (1998). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48421 | - |
| dc.description.abstract | 本篇論文的主要研究在於製備氧化鋅奈米柱與氧化鈦奈米顆粒此一新穎的半導體複合材料，並探討其在光脈衝激發下所展現的隨機雷射(Random laser)特性。我們發現，在氧化鈦奈米顆粒的幫助下，氧化鋅奈米柱於紫外波段所擁有的雷射光強度能夠被顯著地增強。其主要原因，來自於二者材料間的導、價帶位置不同， 靠著螢光共振而伴隨的能量傳遞(Fluorescence Resonance EnergyTransfer)，半導體內部的載子(Carrier)遷移能夠成功地增強氧化鋅奈米柱的同調輻射(Stimulated Emission)。除此之外，氧化鈦奈米顆粒與生俱來的高折射係數(refractive index)(n~2.5)，可使其完美地散射由氧化鋅奈米柱產生的紫外輻射，進一步增強在多重性散射下(Multiple Scattering)，系統所得到的同調回饋(Coherent Feedback)。 | zh_TW |
| dc.description.abstract | An improvement in random lasing action at ultraviolet wavelength has beenachieved from ZnO nanorod arrays grown on sapphire substrate with the assistance of TiO2 nanoparticles. Due to the inherent nature of high refractive index of TiO2 (n ~2.5)> ZnO(n~1.9), the TiO2 nanoparticles can serve efficiently as excellent
nanoscatterers,which can promote the formation of closed-loop paths. In addition, the underlying origin of the pronounced lasing action can also be attributed to the enhanced emission arising from fluorescence resonance energy transfer (FRET) between the band edge transition of ZnO nanorods and TiO2 nanoparticles. The strategy of the lasing enhancement provided here should be very useful for the future development in designing high efficiency optoelectronic devices. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T06:56:09Z (GMT). No. of bitstreams: 1 ntu-100-R97245005-1.pdf: 4272988 bytes, checksum: 062e2b8f12a8ff272b65548cc48a4eab (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 1. Introduction……………………………..
………………………….1 References of Chapter 1 ………………….. ……………………………….……..4 2. Theoretical Background ……………………………………………6 2.1 The Physics of Random Laser…………………………………………………6 2.1.1 Introduction ……………………………………………………………..6 2.1.2 Emission Properties…………………………………………………….10 2.1.3 Mode Structure…………………………………………………………12 2.1.4 Definition…………………………………………………………….....15 2.1.5 Applications………………………………………………………….....16 References of Section 2.1………………………………………………………18 2.2 Band Gap Structure…………………………………………………..………20 2.3 Recombination Processes………………………………………………….…23 2.4 Quantum Confinement Effect…………………………………………….…..26 2.5 Fluorescence Resonance Energy Transfer (FRET)…………………………..28 References of Section 2.2 - 2.5…………………………………………………...31 3. Experimental Techniques………………………………………..…32 3.1 Vapor-Liquid-Solid Growth Mechanism (VLS)…………………………..…32 3.1.1 Fabrication of ZnO nanowires…………………………………………33 3.2 Vapor-Solid Growth Mechanism (V.S)…………………………………..…36 3.2.1 Fabrication of ZnO nanorods……………………………………..……37 3.3 Scanning Electron Microscopy (SEM)………………………………………40 3.4 DC Sputtering Deposition……………………………………………………42 3.5 Raman Scattering Apparatus…………………………………………………44 3.6 Photoluminescence (PL)……………………………………………………...48 3.6.1 Introduction……………………………………………………….……48 3.6.2 Neodymium Doped Yttrium Aluminum Garnet Laser (Nd: YAG)…….51 3.6.3 Carge - Coupled Device (CCD)………………………………………..52 3.6.4 Apparatus Setup……………………………………………………...…52 References of Chapter 3…………………………………….……………………54 4. Enhancement of Random Lasing Based on ZnO/TiO2 Nanocomposites………………………………..…………………..56 4.1 Introduction………………………………………………………………..…56 4.2 Experiment Details…………………………………………………………..58 4.3 Results and Discussion……………………………………………………….59 4.4 Summary…………………………………………………………………..…70 References of Chapter 4….………………………………………………………71 5. Conclusion…………………………………………………………..74 | |
| dc.language.iso | zh-TW | |
| dc.title | 氧化鈦奈米顆粒/氧化鋅奈米柱複合材料之雷射光學性質研究 | zh_TW |
| dc.title | Lasing properties of TiO2/ZnO nanocomposites | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 梁啟德,林泰源 | |
| dc.subject.keyword | 氧化鋅,氧化鈦,隨機雷,射,螢光共振能量,傳遞, | zh_TW |
| dc.subject.keyword | ZnO,TiO2,random lasing,fluorescence resonance energy transfer, | en |
| dc.relation.page | 75 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-02-09 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 應用物理所 | zh_TW |
| 顯示於系所單位： | 應用物理研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-100-1.pdf 目前未授權公開取用 | 4.17 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。