請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47857
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林恭如(Gong-Ru Lin) | |
dc.contributor.author | Tzu-Chieh Lo | en |
dc.contributor.author | 羅子傑 | zh_TW |
dc.date.accessioned | 2021-06-15T06:22:47Z | - |
dc.date.available | 2012-08-10 | |
dc.date.copyright | 2010-08-10 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-08-09 | |
dc.identifier.citation | [1.1] K. Chirakawikul, T. Sujaridchai, B. Ratwises, D. Kruangam, S. Panyakeow, W. Boonkosum, T. Sugino, and J. Shirafuji, “Preparation of p-type polycrystalline diamond films and their applications to hole injection layers in amorphous SiC:H thin film light emitting diodes,” J. Non-Cryst. Solids 227-230, (1998).
[1.2] D. Song, E. C. Cho, G. Conibeer, C. Flynn, Y. Huang, and M. A. Green, “Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices,” Sol. Energy Mater. Sol. Cells 92, 474-481 (2008). [1.3] Y. Hirabayashi, S. Karasawa, K. Kobayashi, S. Misawa, and S. Yoshida, “Spectral response of a photodiode using 3C-SiC single crystalline film,” Sens. Actuators, A Phys 43, 164-169 (1994). [1.4] A. Orpella, D. Bardes, R. Alcubilla, L. F. Marsal, and J. Pallares, “In situ-Doped Amorphous Si0.8C0.2 Emitter Bipolar Transistors,” IEEE Electron Device Lett. 20, 592-594 (1999). [1.5] A. Kumar, N. Kaushik, S. Haldar, M. Gupta, and R. S. Gupta, “Analytical model of 6H-SiC MOSFET,” Microelectron. Eng. 65, 416-427 (2003). [1.6] A. Tabata, M. Kuroda, M. Mori, T. Mizutani, and Y. Suzuoki, “Band gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition,” J. Non-Cryst. Solids 338-340, 521-524 (2004). [1.7] I. Martin, M. Vetter, A. Orpella, J. Puigdollers, A. Cuevas, and R. Alcubilla, Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx :H films, Appl. Phys. Lett. 79, 2199-2201 (2001). [1.8] K. Sugita, M. Itoh, A. Masuda, and H. Matsumura, “Fabrication of a-Si1-xCx:H thin films for solar cells by the Cat-CVD method using a carbon catalyzer,” Thin Solid Films 430, 170-173 (2003). [1.9] S. Kerdiles, R. Rizk, A. P. Rodrıguez, B. Garrido, O. G. Varona, L. C. Barrio, and J. R. Morante, Magnetron sputtering synthesis of silicon–carbon films: structural and optical characterization, Solid-State Electron. 42, 2315-2320 (1998). [1.10] M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Microstructural evolution of a -plane GaN grown on a -plane SiC by metalorganic chemical vapor deposition, Appl. Phys. Lett. 84, 1281-1283 (2004). [1.11] T. L. Daulton, T. J. Bernatowicz, R. S. Lewis, S. Messenger, F. J. Stadermann, and S. Amari, “Polytype distribution of circumstellar silicon carbide: microstructural characterization by transmission electron microscopy,” Geochim. Cosmochim. Acta 67, 4743-4767 (2003). [1.12] Y. S. Park, in SiC Materials and Devices, R. K. Willardson and E. R. Weber ed. (Academic Press, New York, 1998). [1.13] M. E. Levinshteĭn, S. L. Rumyantsev, and M. Shur, in Properties of Advanced SemiconductorMaterials GaN, AlN, SiC, InN ,BN, SiC, SiGe, John Wiley & Sons, Inc. ed (New York, 2001). [2.1] M. Bhatnagar and B. J. Baliga, “Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices,”IEEE Trans. Electron Devices 40, 645-655 (1993). [2.2] P. G. Neudeck, “Progress in silicon carbide semiconductor electronics technology,”J. Electron. Mater. 24, 283-288 (1995). [2.3] J. Lefèvre, J. M. Costantini, S. Esnouf, and G. Petite, “Thermal stability of irradiation-induced point defects in cubic silicon carbide,”J. App. Phys. 106, 083509 (2009). [2.4] V. Chu, J. P. Conde, J. Jarego, P. Brogueira, J. Rodriguez, N. Barradas, and J. C. Soares, “Transport and photoluminescence of hydrogenated amorphous silicon–carbon alloys,”J. Appl. Phys. 78, 3164-3173 (1995). [2.5] X. Redondas, P. Gonzalez, B. Leon, and M. Perez-Amor, “Influence of the substrate temperature on silicon–carbon thin films deposited from SiH4 and C2H4 by excimer lamp-CVD,”Thin Solid Films 317, 112-115 (1998). [2.6] A. Dasgupta, S. C. Saha, and S. Ray, “Substrate temperature: A critical parameter for the growth of microcrystalline silicon-carbon alloy thin films at low power,”J. Mater. Res. 14, 2554-2559 (1999). [2.7] W. Yu, X. Wang, W. Lu, S. Wang, Y. Bian, and G. Fu, “Effects of substrate temperature on microstructural and photoluminescent properties of nanocrystalline silicon carbide films,”Physica B 405, 1624-1627 (2010). [2.8] D. Song, E. C. Cho, G. Conibeer, Y. H. Cho, Y. Huang, S. Huang, C. Flynn, and M. A. Green, “Fabrication and characterization of Si nanocrystals in SiC matrix produced by magnetron cosputtering,” J. Vac. Sci. Technol. B 25, 1327-1335 (2007). [2.9] J. F. Moulden, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Septrocopy (Perkin-Elmer, Eden Prairie), (1992). [2.10] A. Azis and S. A. Rahman, “Optical Characteristics of Hydrogenated Amorphous Silicon Carbide Films Prepared at Various Gas Flow Rate Ratios,” Jpn. J. Appl. Phys. 46, 6530-6532 (2007). [2.11] J. Xu, L. Yang, Y. Rui, J. Mei, X. Zhang, W. Li, Z. Ma, L. Xu, X. Huang, K. Chen, “Photoluminescence characteristics from amorphous SiC thin films with various structures deposited at low temperature,” Solid State Commun. 133, 565-568 (2005). [2.12] J. H. Park, H. S. Kwon, and J. Y. Lee, “Structural and optical properties of hydrogenated amorphous silicon carbide deposited by glow discharge from C3H8-SiH4-H2 mixture,” J. Appl. Phys. 72, 5246-5252 (1992). [2.13] Q. Cheng, S. Xu, J. D. Long, Z. H. Ni, A. E. Rider, and K. Ostrikov, “High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas,” J. Phys. D: Appl. Phys. 41 055406 (2008). [2.14] J. C. C. Wong, A. Oliver, J. Roiz, J. M. Hernández, L. R. Fernández, J. G. Morales, and A. C. Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res., Sect. B 175-177, 490-494 (2001). [2.15] B. Kalache, A. I. Kosarev, R. Vanderhaghen, and P. R. i Cabarrocas, “Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties,” J. Appl. Phys. 93, 1262-1273 (2003). [2.16] A. V. Vasin, S. P. Kolesnik, A. A. Konchits, A. V. Rusavsky, V. S. Lysenko, A. N. Nazarov, Y. Ishikawa, and Y. Koshka, “Structure, paramagnetic defects and light-emission of carbon-rich a-SiC:H films,” J. Appl. Phys. 103, 123710 (2008). [2.17] W. J. Zong, T. Sun, D. Li, K. Cheng, and Y. C. Liang, “XPS analysis of the groove wearing marks on flank face of diamond tool in nanometric cutting of silicon wafer,” Int. J. Mach. Tools Manuf. 48, 1678-1687 (2008). [2.18] M. S. Hegde, R. Caracciolo, K. S. Hatton, and J. B. Wachtman, “Electronic structure and bonding in silicon oxynitride films: An XPS study,” Appl. Surf. Sci. 37, 16-24 (1989) [2.19] M. A. E. Khakani, M. Chaker, A. Jean, S. Boily, H. Pdpin, and J. C. Kieffer, “Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films,” J. Appl. Phys. 74, 2834-2840 (1993). [2.20] B. P. Swain and R. O. Dusane, “Multiphase structure of hydrogen diluted a-SiC:H deposited by HWCVD,” Mater. Chem. Phys. 99, 240-246 (2006). [2.21] W. Y. Lee, “X-ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1-x Cx:H films,” J. Appl. Phys. 51, 3365-3372 (1980). [2.22] G. Yang, E. Liu, N. W. Khun, and S. P. Jiang, “Direct electrochemical response of glucose at nickel-doped diamond like carbon thin film electrodes,” J. Electroanal. Chem. 627, 51-57 (2009). [2.23] B. Lamontagne, E. Sacher, and M. R. Wertheimer, “Silicon-carbon reaction provoked by the sputter cleaning of lightly contaminated crystalline silicon,” Appl. Surf. Sci. 52, 71-76 (1991). [2.24] J. Binner and Y. Zhang, “Characterization of silicon carbide and silicon powders by XPS and zeta potential measurement,” J. Mater. Sci. Lett. 20, 123-126 (2004). [2.25] F. Xu, Z. Xiao, G. Cheng, Z. Yi, T. Zhang, L Gu, and X. Wang, “Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation,” J. Phys.: Condens. Matter 14, L63–L69 (2002). [3.1] T. Itoh, S. Tanaka, J. F. Li, R. Watanabe, and M. Esashi, “Silicon-Carbide Microfabrication by Silicon Lost Molding for Glass-Press Molds,” J. Microelectromech. S. 15, 859-863 (2006). [3.2] D. Nesheva, C. Raptis, A. Perakis, I. Bineva, Z. Aneva, Z. Levi, S. Alexandrova, and H. Hofmeister, “Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films,” J. Appl. Phys. 92, 4678-4683 (2002). [3.3] S. Zhang, W. Zhang and J. Yuan, “The preparation of photoluminescent Si nanocrystal-SiOx films by reactive evaporation,” Thin Solid Films 326, 92-98 (1998). [3.4] Y. Q. Wang, G. L. Kong, W. D. Chen, H. W. Diao, C. Y. Chen, S. B. Zhang, and X. B. Liao, “Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix,” Appl. Phys. Lett. 81, 4174-4176 (2002). [3.5] N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride,” Phys. Rev. Lett. 86, 1355-1357 (2001). [3.6] T. W. Kim, C. H. Cho, B. H. Kim, and S. J. Parka, “Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3,” Appl. Phys. Lett. 88, 123102 (2006). [3.7] D. Song, E. C. Cho, Y. H. Cho, G. Conibeer, Y. Huang, S. Huang, and M. A. Green, “Evolution of Si (and SiC) nanocrystal precipitation in SiC matrix,” Thin Solid Films 516, 3824-3830 (2008). [3.8] G. Faraci, S. Gibilisco, P. Russo, A. R. Pennisi, G. Compagnini, S. Battiato, R. Puglisi, and S. L. Rosa, “Si/SiO2 core shell clusters probed by Raman spectroscopy,” Eur. Phys. J. B 46, 457-461 (2005). [3.9] S. F. Ting, Y. K. Fang, W. T. Hsieh, Y. S. Tsair, C. N. Chang, C. S. Lin, M. C. Hsieh, H. C. Chiang, and J. J. Ho, “Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition,” J. Electron. Mater. 31, 1341-1346 (2007). [3.10] H. Suzuki, H. Araki, and T. Nova, “Microstructure of SiC thin films produced on graphite by excimer-laser chemical vapour deposition,” J. Mater. Sci. Lett. 13, 49-52 (1994). [3.11] S. Baunack, S. Oswald, H. K. Tönshoff, F. von Alvensleben, and T. Temme, “Surface characterisation of laser irradiated SiC ceramics by AES and XPS,” Fresenius J Anal Chem 365, 173-177 (1999). [3.12] S. J. Wang, P. C. Lim, A. C. H. Huan, C. L. Liu, J. W. Chai, S. Y. Chow, J. S. Pan, Q. Li, and C. K. Ong, “Reaction of SiO2 with hafnium oxide in low oxygen pressure,” Appl. Phys. Lett. 82, 2047-2049 (2003). [3.13] M. Veres, M. Koós, S. Tóth, M. Füle, I. Pócsik, A. Tóth, M. Mohai, and I. Bertóti, “Characterisation of a-C:H and oxygen-containing Si:C:H films by Raman spectroscopy and XPS,” Diam. Relat. Mater. 14, 1051-1056 (2005). [3.14] D. Joung, A. Chunder, L. Zhai, and S. I. Khondaker, “High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis,” Nanotechnology 21, 165202 (2010). [3.15] H. S. Jung and H. H. Park, “Determination of local bonding configuration and structural modification in amorphous carbon with silicon incorporation,” Diam. Relat. Mater. 12, 1373-1377 (2003). [3.16] A. Morimoto, S. Ooroza, M. Kumeda, and T. Shimizu, “Raman studies on local structural disorder in silicon-based amorphous semiconductor films,” Solid State Commun. 47, 773-777 (1983). [3.17] M. Lattemann, E. Nold, S. Ulrich, H. Leiste, and H. Holleck, “Investigation and characterisation of silicon nitride and silicon carbide thin films,” Surf. Coat. Technol. 174-175, 365-369 (2003). [3.18] A. J. Steckl, J. Devrajan1, S. Tlali, H. E. Jackson, C. Tran, S. N. Gorin, and L. M. Ivanova, “Characterization of 3C–SiC crystals grown by thermal decomposition of methyltrichlorosilane,” Appl. Phys. Lett. 69, 3824-3826 (1996). [3.19] M. Gorman and S. A. Solin, “Direct evidence for homonuclear bonds in amorphous SiC,” Solid State Commun. 15, 761-765 (1974). [3.20] J. Bullot and M. P. Schmidt, “Physics of Amorphous Silicon-Carbon Alloys,” Physica Status Solidi (b) 143, 345-418 (1987). [3.21] J. Xu, J. Mei, Y. Rui, D. Chen, Z. Cen, W. Li, Z. Ma, L. Xu, X. Huang, and K. Chen, “UV and blue light emission from SiC nanoclusters in annealed amorphous SiC alloys,” J. Non-Cryst. Solids 352, 1398-1401 (2006). [3.22] J. M. Bind, “Phase transformation during hot-pressing of cubic SiC,” Mat. Res. Bul. 13, 91-96 (1978). [3.23] A. L. Hannam and P.T.B. Shaffer, “Revised X-ray Diffraction Line Intensities for Silicon Carbide Polytypes,” J. Appl. Cryst. 2, 45-48 (1969). [4.1] D. H. Seo, A. E. Rider, A. D. Arulsamy, I. Levchenko, and K. Ostrikov, “Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach,” J. Appl. Phys. 107, 024313 (2010). [4.2] Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada1, and M. Konagai, “Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice,” Jpn. J. Appl. Phys. 46, L833-L835 (2007). [4.3] G. Conibeer, M. Green, R. Corkish, Y. Cho, E. C. Cho,C. W. Jiang, T. Fangsuwannarak, E. Pink, Y. Huang, T. Puzzer,T. Trupke, B. Richards, A. Shalav, and K. L. Lin, “Silicon nanostructures for third generation photovoltaic solar cells,” Thin Solid Films 511-512, 654-662 (2006). [4.4] E. C. Cho, S. Park, X. Hao, D. Song, G. Conibeer, S. C. Park, and M. A. Green, “Silicon quantum dot/crystalline silicon solar cells,” Nanotechnology 19, 245201 (2008). [4.5] S. Miyajima, M. Sawamura, A. Yamada, M. Konagai, “Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature,” J. Non-Cryst. Solids 354, 2350-2354 (2008). [4.6] N. Jensen, U. Rau, R. M. Hausner, S. Uppal, L. Oberbeck, R. B. Bergmann, and J. H. Werner, “Recombination mechanisms in amorphous siliconÕcrystalline silicon heterojunction solar cells,” J. Appl. Phys. 87, 2639-2645 (2000). [4.7] Q. Wang, M. R. Page, E. Iwaniczko, Y. Xu, L. Roybal, R. Bauer, B. To, H. C. Yuan, A. Duda, F. Hasoon, Y. F. Yan, D. Levi, D. Meier, H. M. Branz, and T. H. Wang, “Efficient heterojunction solar cells on p-type crystal silicon wafers,” Appl. Phys. Lett. 96, 013507 (2010). [4.8] S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, “Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 85, 8353- 8361 (1999). [4.9] Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of a-SiC:H for high-efficiency a-Si solar cell,” J. Appl. Phys. 53, 5273-5281(1982). [4.10] J. Tauc, R. Grigorovici and A. Vancu, “Optical Properties and Electronic Structure of Amorphous Germanium,” Phys. Stat. Sol. 15, 627-637 (1966). [4.11] G. Ambrosone, D. K. Basa, U. Coscia, and M. Fathallah, “Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films,” J. Appl. Phys. 104, 123520 (2008). [4.12] Z. Hu, X. Liao, H. Diao, G. Kong, X. Zeng, Y. Xu, “Amorphous silicon carbide films prepared by H2 diluted silane-methane plasma,” J. Cryst. Growth 264, 7-12 (2004). [4.13] H. Okumura, S. Yoshida and T. Okahisa, Optical properties near the band gap on hexagonal and cubic GaN, Appl. Phys. Lett. 64, 2997-2999 (1994). [4.14] Robert Hull, Properties of Crystalline Silicon, (emis DataReviews Series No 20, INSPEC, IEE, London, UK, 1999), Chap. 12 [4.15] G. Ambrosone, U. Coscia, S Lettieri, P. Maddalena, C. Privato, and S. Ferreroc, “Hydrogenated amorphous silicon carbon alloys for solar cells, Thin Solid Films,” 403-404, 349-353 (2002). [4.16] Y. Park, V. Choong, Y. Gao, B. R. Hsieh, and C. W. Tang, “Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy,” Appl. Phys. Lett. 68, 2699-2701 (1996). [4.17] H. B. Michaelson, “The work function of the elements and its periodicity,” J. Appl. Phys. 48, 4729-4733 (1977). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47857 | - |
dc.description.abstract | 本論文藉由電漿輔助化學氣相沉積系統成長富矽碳化矽薄膜,在調變氣體流量比,腔體壓力,射頻功率,改變基板溫度 250至450℃製程參數之下進行成膜品質分析。據 SIMS分析觀察到基板溫度影響薄膜與氧原子的結合導致結晶碳化矽材料的劣化。在較低的250℃基板溫度成長樣本退火後氧原子侵入整層碳化矽薄膜且氧含量SIMS強度讀值在9.7×105。相同的氧化情形可在XPS分析中呈現,經過高溫處理從Si-C, C-C sp3, C=C sp2鍵結的退化及O-Si-O鍵結的增強可證明碳化矽膜的相變。相反地,提升基板溫度至450℃條件下成長,碳化矽膜氧化的情形停止在靠近表面約20nm,且氧元素強度從9.6×105降至4.0×105。
透過選擇在薄膜沉積過程中以氬氣預稀釋腔體殘氧,以及氬氣保護下進行覆蓋式退火,可以進一步穩定碳化矽鍵結並阻止成膜氧化。在溫度拉升至1050℃且持續30分鐘退火後,經由HR-TEM得到自我聚集奈米矽的直接證據。奈米矽晶的直徑以及密度分別為3±1 nm和4.35×1018 cm-3。富矽碳化矽基ITO/n-SiC/p-Si/Al薄膜太陽能電池的電流-電壓特性曲線,隨著成長n型碳化矽參雜氣體PH3濃度從1%至5%而變化,開路電壓由72.5 升高至205.8 mV,短路電流由0.93 提升至 3.01 mA/cm2,在參雜氣體PH3濃度為5%時獲得單層n型富矽碳化矽薄膜太陽能電池轉換效率為0.16%。 | zh_TW |
dc.description.abstract | The non-stoichiometric silicon carbide (Si1-xCx) film deposited by plasma enhanced chemical vapor deposition (PECVD) system. At the same gaseous flow ratio, chamber pressure and RF power, changing substrate temperature 250 and 450℃ affect the different deposition condition. According to the SIMS analysis, we observe that the substrate plays an important role on the oxygen-exclusive synthesis and stabilized crystallization of SiC material. In s250 sample annealing 850℃ for 10 min, the oxygen content invaded entire film under 250℃ lower substrate temperature deposition condition and the intensity of O rose to 9.7×105 counts. In addition, silicon atoms content decreased to only 0.3×105 counts and carbon atoms content almost vanished in the film. On the contrary, in s450 sample, the oxidation depth is about 20 nm and the O element component intensity from 9.6×105 counts return to 4.0×105 counts. The same tendency illustrate in XPS measurement, the phase transformation of Si-C to relatively strong SiO2 and graphite/diamond related Si(2p3) and C(1s) XPS signals can be obtained from the oxidized SiC with numerous Si-O and C-C bonds formed during annealing. The solution to solve incorporated oxygen deposition and better stacking sequence of crystalline structure is increasing deposition temperature as shown in SIMS analysis. Moreover, we not only purge chamber by Ar gas during vacuum but also make use of Ar gas substitute for N2 as furnace annealing gas. However, the self-assembled Si starts to appear with increase annealing temperature up to 850℃. The volume density of Si-QDs, with an average diameter of 3±1 nm formatted in annealed Si-rich S1-xCx, is controlled at 4.35×1018 cm-3 after 1050℃ annealing temperature by HR-TEM image analysis. The I-V characteristic of SiC thin film solar cells: ITO/n-type SiC/p-type Si/Al, the open current voltage (Voc) increase from 72.5 to 205.8 mV, and the short current density (Jsc) enhance from 0.93 to 3.01 mA/cm2 with rising PH3 doping concentration from 0.47% to 5%. With 5% PH3 doping concentration, the solar cell conversion efficiency of the n-SiC based sample is 0.16%. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T06:22:47Z (GMT). No. of bitstreams: 1 ntu-99-R97941083-1.pdf: 1425475 bytes, checksum: 2db9a53a2d4cd18b5676e26273fb3d51 (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS v LIST OF FIGURES viii LIST OF TABLES xi Chapter 1 Introduction 1 1.1 Introduction 1 1.1.1 Introduction of Silicon Carbide Material 2 1.2 Motivation 2 1.3 Organization of the Thesis 3 1.4 Reference 3 Chapter 2 Diagnosis on the Degradation of SiC Film with Substrate Temperature and Annealing Temperature 7 2.1 Introduction 7 2.2 Experiments 8 2.3 Results and Discussion 9 2.3.1 Photoluminescence Analysis of Silicon Carbide Film 9 2.3.2 Secondary Ion Mass Spectrometry Analysis of Silicon Carbide Film 10 2.3.3 X-ray Photoelectron Spectroscopy Analysis of Silicon Carbide Film 12 2.4 Summary 14 2.5 Reference 16 Chapter 3 Annealing Temperature Dependent Self-Assembled Silicon Carbide Nanocrystal Precipitation in Silicon-rich Silicon Carbide 25 3.1 Introduction 25 3.2 Experiments 26 3.3 Results and Discussion 27 3.3.1 X-ray Photoelectron Spectroscopy Analysis of Silicon Carbide Film 27 3.3.2 Raman Spectroscopy Analysis of Silicon Carbide Film 29 3.3.3 Fourier Transform Infrared Spectroscopy Analysis of Silicon Carbide Film 30 3.3.4 Cross-Section High Resolution Transmission Electron Microscopy Image of Silicon Carbide Film 30 3.3.5 Energy Dispersive X-ray Spertroscopy Analysis of Silicon Carbide Film 31 3.3.6 Selected Area Diffraction Pattern of Silicon Carbide Film 31 3.4 Summary 32 3.5 Referance 33 Chapter 4 Detuning Optical Bandgap of Amorphous Silicon Carbide and I-V Chaeacteristics of Silicon Carbide Thin Film Solar Cell 50 4.1 Introduction 50 4.2 Experiments 50 4.3 Results and Discussion 52 4.3.1 Cross-Section Scanning Electron Microscopy of Silicon Carbide Film 52 4.3.2 Transmittance, Reflection and Optical Bandgap of Silicon Carbide Film 53 4.3.3 Reflection index analysis of Silicon Carbide Film 54 4.3.4 I-V Characteristics of Silicon Carbide Thin Film Solar Cell 55 4.4 Summary 55 4.5 Reference 56 Chapter 5 Conclusion 67 作者簡介 70 | |
dc.language.iso | en | |
dc.title | 富矽碳化矽薄膜太陽能電池 | zh_TW |
dc.title | Si-rich Silicon Carbide Thin-Film Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳志毅,李晁逵 | |
dc.subject.keyword | 電漿輔助化學氣相沉積,富矽碳化矽,奈米矽晶,碳化矽薄膜太陽能電池, | zh_TW |
dc.subject.keyword | PECVD,Si-rich Si1-xCx,silicon nanocrystal,SiC thin film solar cell, | en |
dc.relation.page | 70 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-08-10 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-99-1.pdf 目前未授權公開取用 | 1.39 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。