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標題: | 直通矽晶穿孔高頻電氣特性分析與等化器設計 High-Frequency Electrical Characterization and Equalizer Design for Through Silicon Vias |
作者: | Chang-Yi Wen 溫昌懌 |
指導教授: | 吳瑞北 |
關鍵字: | 三維晶片封裝,系統整合,直通矽晶穿孔,等化器, 3D IC,system integration,through silicon via (TSV),equalizer, |
出版年 : | 2010 |
學位: | 碩士 |
摘要: | 隨著半導體工業的演進,為了追求微小化以及多功能,在多樣晶片中藉由封裝技術進行系統整合,已經成為現今晶片封裝的趨勢。將不同的晶片做垂直堆疊並以直通矽晶穿孔(TSV, Through Silicon Via)結構來連結的三維晶片(3D IC)封裝,則為其中一種主要的關鍵結構。
為了能夠有系統地援用此種新型的TSV結構,本文將分析其高頻電氣特性並建立以傳輸線為基礎的等效電路模型。利用等效電路模型可以對其進行頻域上的分析,以符合三維晶片結構所設定之雜訊規範,使其能應用於高速數位電路與系統晶片封裝設計上。為了驗證電路模型的可用性,本文亦將電路模型之模擬結果與發表在國際期刊上的實驗量測數據做比較。此外,為了減少多層堆疊TSV結構在高頻傳輸下的不理想效應,本論文提出有效的RC補償電路與設計方法,只需要一階RC等化器就可以完整地補償頻率特性與改善眼圖結果。 In the pursuit of the miniaturization and multifunction, the integrated systems on one packaging has become a trend nowadays in the advanced packaging technologies of semiconductor industry. Among them, 3D IC packaging is one of the main structures which stacks the different chips vertically and interconnects the chips by through silicon via (TSV) structure. To design the novel TSV structure systematically, we analyzed TSV’s high-frequency characteristic and proposed an equivalent circuit model of the TSV based on the transmission line model. In order to apply TSV in the high-speed digital circuits and systems-in-package design, we analyzed the TSV equivalent circuit model in the frequency domain to verify the tolerable noise margin in 3D IC structure. For the purpose of verifying the availability of the proposed circuit model, the simulation results were compared with the measured experiment data refer to those of published international papers. In addition, to reduce the non-ideal effects in a stacking multilayered TSV structure for the high-frequency transmission, a useful compensation method ws proposed, which needs only one first-order RC equalizer to compensate completely in the frequency-domain response and improve the signal integrity on the eye-diagram. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47578 |
全文授權: | 有償授權 |
顯示於系所單位: | 電信工程學研究所 |
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