請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47176完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蔡豐羽 | |
| dc.contributor.author | Zheng Ming-Hom | en |
| dc.contributor.author | 曾銘宏 | zh_TW |
| dc.date.accessioned | 2021-06-15T05:49:51Z | - |
| dc.date.available | 2012-08-20 | |
| dc.date.copyright | 2010-08-20 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-08-18 | |
| dc.identifier.citation | [1] R.H. Friend, R.W. Gymer, A.B. Holmes, J.H. Burroughes, R.N. Marks, C. Taliani, D.D.C. Bradley, D.A.D. Santos, J.L. Bredas, M. Logdlund, and W.R. Salaneck, “Electroluminescence in conjugated polymers,” Nature, vol. 397, Jan. 1999, pp. 121-128.
[2] C.W. Tang and S.A. VanSlyke, “Organic electroluminescent diodes,” Applied Physics Letters, vol. 51, 1987, p. 913. [3] G. Gustafsson, Y. Cao, G.M. Treacy, F. Klavetter, N. Colaneri, and A.J. Heeger, “Flexible light-emitting diodes made from soluble conducting polymers,” Nature, vol. 357, 1992, pp. 477-479. [4] A. Padmaperuma, G. Schmett, D. Fogarty, N. Washton, S. Nanayakkara, L. Sapochak, K. Ashworth, L. Madrigal, B. Reeves, and C. Spangler, “New dendritic materials as potential OLED transport and emitter moeities,” Materials Research Society Symposium - Proceedings, 2000. [5] G.P. Crawford, Flexible flat panel displays,, 2005. [6] G. Dennler, C. Lungenschmied, H. Neugebauer, N. Sariciftci, M. Latrèche, G. Czeremuszkin, and M. Wertheimer, “A new encapsulation solution for flexible organic solar cells,” Thin Solid Films, vol. 511-512, Jul. 2006, pp. 349-353. [7] M.S. Weaver, L.A. Michalski, K. Rajan, M.A. Rothman, J.A. Silvernail, J.J. Brown, P.E. Burrows, G.L. Graff, M.E. Gross, P.M. Martin, M. Hall, E. Mast, C. Bonham, W. Bennett, and M. Zumhoff, “Organic light-emitting devices with extended operating lifetimes on plastic substrates,” Applied Physics Letters, vol. 81, 2002, p. 2929. [8] Suntola and Antson, “US Patent 4 058 430 (1977).” [9] R.L. Puurunen, “Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process,” Journal of Applied Physics, vol. 97, 2005, p. 121301. [10] L. Niinistö, M. Nieminen, J. Päiväsaari, J. Niinistö, M. Putkonen, and M. Nieminen, “Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials,” physica status solidi (a), vol. 201, 2004, pp. 1443-1452. [11] H.S. Nalwa, Handbook of thin film materials, Academic Press, 2002. [12] P.F. Carcia, R.S. McLean, M.H. Reilly, M.D. Groner, and S.M. George, “Ca test of Al2O3 gas diffusion barriers grown by atomic layer deposition on polymers,” Applied Physics Letters, vol. 89, 2006, p. 031915. [13] W. Kowalsky, J. Meyer, P. Görrn, F. Bertram, S. Hamwi, T. Winkler, H. Johannes, T. Weimann, P. Hinze, and T. Riedl, “Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas-Diffusion Barriers - A Strategy for Reliable Encapsulation of Organic Electronics,” Advanced Materials, vol. 21, 2009, pp. 1845-1849. [14] C. Chang, C. Chou, Y. Lee, M. Chen, and F. Tsai, “Thin-film encapsulation of polymer-based bulk-heterojunction photovoltaic cells by atomic layer deposition,” Organic Electronics, vol. 10, 2009, pp. 1300-1306. [15] J. Meyer, D. Schneidenbach, T. Winkler, S. Hamwi, T. Weimann, P. Hinze, S. Ammermann, H. Johannes, T. Riedl, and W. Kowalsky, “Reliable thin film encapsulation for organic light emitting diodes grown by low-temperature atomic layer deposition,” Applied Physics Letters, vol. 94, 2009, p. 233305. [16] P. Görrn, T. Riedl, and W. Kowalsky, “Encapsulation of Zinc Tin Oxide Based Thin Film Transistors,” The Journal of Physical Chemistry C, vol. 113, Jun. 2009, pp. 11126-11130. [17] J.W. Elam, D. Routkevitch, and S.M. George, “Properties of ZnO/Al2O3 Alloy Films Grown Using Atomic Layer Deposition Techniques,” Journal of The Electrochemical Society, vol. 150, Jun. 2003, pp. G339-G347. [18] J. Na, G. Scarel, and G.N. Parsons, “In Situ Analysis of Dopant Incorporation, Activation, and Film Growth during Thin Film ZnO and ZnO:Al Atomic Layer Deposition,” The Journal of Physical Chemistry C, vol. 114, Jan. 2010, pp. 383-388. [19] J. Na, Q. Peng, G. Scarel, and G.N. Parsons, “Role of Gas Doping Sequence in Surface Reactions and Dopant Incorporation during Atomic Layer Deposition of Al-Doped ZnO,” Chemistry of Materials, vol. 21, Dec. 2009, pp. 5585-5593. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47176 | - |
| dc.description.abstract | 本論文研究原子層沈積(Atomic Layer Deposition, ALD)奈米複合阻氣薄膜的機制,探討材料與結構對於薄膜氣體穿透率與抗撓曲程度的影響。本論文選擇氧化鋁/氧化鉿(Al2O3/HfO2,以下簡稱AHO)與新開發的氧化鋁/氧化鋅(Al2O3/ZnO, 以下簡稱AZO) 等兩種奈米複合阻氣薄膜。本研究發現在不同Al2O3/HfO2與Al2O3/ZnO比例下,奈米複合薄膜之氣體滲透率會隨著HfO2與ZnO含量增加而提高,而其可撓曲度則隨之下降。此是由於HfO2與ZnO皆為結晶性材料,因此當其於奈米複合薄膜結構中含量增加時,會於薄膜中產生大量晶界,使氣體滲透率上升;同時,該等結晶亦使薄膜容易在撓曲後受到破壞,因此可撓曲度較差。在AHO與AZO比較之比較方面,本研究發現AZO之氣體滲透率一般較AHO為高,此乃因ZnO較HfO2易結晶,因此較易產生氣體可快速通過之晶界;然而,當ZnO與HfO2的含量低時,AZO的氣體滲透率反而較AHO低,此是因為ZnO與HfO2兩種材料於複合薄膜中層數過少,尚不足以形成結晶,而ZnO成長時的立體障礙較小,能形成較緻密的結構。在經過結構與成膜條件的最佳化後,本研究所製備之AZO與AHO薄膜的水氣穿透率(WVTR)與氧氣穿透率(OTR)皆達到低於儀器量測極限(WVTR: 5×10-4g/m2/day; OTR: 2×10-2 c.cc/m2/day)的水準。此外,該等AHO與AZO薄膜具有穩定之阻氣效能,其阻氣效能經空氣中儲存超過1500小時或經撓曲2000次後皆不會有變化。 | zh_TW |
| dc.description.abstract | This study developed nano-laminated gas-permeation barriers with atomic layer deposition (ALD) to achieve low gas permeability, high flexibility/bendability, and in-air stability. Two material systems were investigated: Al2O3/HfO2 (AHO) and Al2O3/ZnO (AZO), the latter of which was a novel material for gas barrier applications. The barrier performance and flexibility of the nano-laminates were significantly dependent upon the Al2O3/HfO2 (A/H) and Al2O3/ZnO (A/Z) ratios: they both deteriorated with increasing A/H and A/Z ratios. This was attributed to the crystalline nature of HfO2 and ZnO, which increased the susceptibility to bending of the nano-laminates and provided grain boundaries for rapid gas permeation. Comparing AZO and AHO with the same A/Z and A/H ratios, we found that AZO was generally poorer gas barriers than AHO, likely as a result of ZnO’s greater tendency to crystallize; however, at lower ratios, AZO had lower gas permeability than AHO, likely as a result of better surface coverage enabled by the lower steric hindrance of the ZnO organometallic precursor. Upon optimizations of the composition and ALD conditions, both the AZO and AHO films achieved low water vapor transmission rate (WVTR) and oxygen transmission rate (OTR) (WVTR < 5×10-4 g /m2/day; OTR < 2×10-2 c.c./m2/day) and remained stable upon storage in air for > 1500 h or bending for 2000 times. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T05:49:51Z (GMT). No. of bitstreams: 1 ntu-99-R97527048-1.pdf: 2343969 bytes, checksum: ac4c4fabe2e401b719e17464b55008cc (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | Contents
Acknowledgement………………………………………………………i Abstract (Chinese)…………………………………………………ii Abstract (English)…………………………………………………iii Contents………………………………………………………………iv List of Tables and Figures………………………………………vi Chapter 1 Introduction……………………………………………1 1.1. The Critical Role of Gas Barrier for Flexible Organic Electronic Devices…………………………………………1 1.2. Reviews of Encapsulation Methods……………………4 1.2.1. Glass Lid Encapsulation…………………………………4 1.2.2. Thin-Film Encapsulation…………………………………5 1.3. The Development of ALD Gas Barrier Technology……7 1.4. Motivations………………………………………………10 1.5. Objectives Statements…………………………………11 Chapter 2 Experimental Details…………………………………12 3.1 Materials…………………………………………………12 3.2 Procedures, Apparatus and Characterization………12 3.2.1 Atomic Layer Deposition………………………………12 3.2.2 Helium Transmittance Rate Measurement……………15 3.2.3 Oxygen and Water Vapor Transmittance Rate Measurement……………………………………………………………18 3.2.4 SEM Observation…………………………………………18 Chapter 3 Results and Discussion………………………………19 3.1 Gas Permeation of Different Composition Ratio Gas Barrier Films…………………………………………………………20 3.2 Bending Test of Different Composition Ratio Gas Barrier Films…………………………………………………………33 3.3 Gas Barrier Films Storage in Air……………………35 3.4 OTR and WVTR measurement………………………………37 Chapter 4 Conclusions and Future Works………………………38 4.1. Conclusions………………………………………………38 4.2. Future Works………………………………………………40 5. References…………………………………………………41 | |
| dc.language.iso | en | |
| dc.subject | 阻氣薄膜 | zh_TW |
| dc.subject | 氣體穿透率 | zh_TW |
| dc.subject | 原子層沈積技術 | zh_TW |
| dc.subject | gas permeability | en |
| dc.subject | ALD | en |
| dc.subject | gas barrier film | en |
| dc.title | 原子層沈積技術之奈米複合阻氣薄膜研究 | zh_TW |
| dc.title | A study of nano-laminatd gas barrier films by using atomic layer deposition | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 廖文彬,劉國辰 | |
| dc.subject.keyword | 原子層沈積技術,阻氣薄膜,氣體穿透率, | zh_TW |
| dc.subject.keyword | ALD,gas barrier film,gas permeability, | en |
| dc.relation.page | 44 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-08-19 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位: | 材料科學與工程學系 | |
文件中的檔案:
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-99-1.pdf 未授權公開取用 | 2.29 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。
