以射頻磁控濺鍍製作可撓性透明p-n異質接面

Abstract

本實驗以射頻磁控濺鍍在常溫下沉積n⁺AZO、n-ZnO、i-ZnO、n-MgxZn1-xO及p-CuAlO2等透明導電薄膜，在無經額外熱處理下製作成透明p-n異質接面二極體，分別在商用ITO玻璃基板上及鍍有ITO之PET基板上製作以下四種結構:n⁺AZO/p-CuAlO2/ITO，n⁺AZO/n-ZnO/p-CuAlO2/ITO，n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO，n⁺AZO/i-ZnO/p-CuAlO2/ITO，並分別調整p層、n層及i層厚度，研究不同厚度對二極體特性及UV光響應度之影響。 在n⁺AZO/p-CuAlO2/ITO 異質接面二極體方面，分別調整p層及n⁺厚度為100nm、200nm及300nm，並同時製作在玻璃基板及PET基板上共18種二極體。啟動電壓約為0.8V，崩潰電壓隨著p層厚度增加而增加，與n⁺厚度無明顯相關，其整流特性最好者為: n⁺層厚度200nm和p層厚度300nm在玻璃上的異質接面二極體，其整流值在±4V時為 ，其UV光響應度在逆向偏壓-6V 時為 A/W。 在n⁺AZO/n-ZnO/p-CuAlO2/ITO異質接面二極體方面，分別調整p層厚度為100nm、200nm和300nm，及n層厚度為40nm、80nm和120nm，並同時製作在玻璃基板及PET基板上共18種二極體。啟動電壓約為2.0V ，崩潰電壓隨著p層及n層厚度增加而增加。其整流特性最好者為: n層厚度80nm和p層厚度200nm在玻璃基板上的異質接面二極體，其整流值在±4V時為 ，其UV光響應度在逆向偏壓-6V時為 A/W。 在n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO異質接面二極體方面，分別調整n-MgxZn1-xO 層Mg摻雜的量，分別為0、0.05、0.1及0.3，並同時製作在玻璃基板及PET基板上共8種二極體。結果顯示啟動電壓和崩潰電壓皆隨著Mg摻雜量的增加而增加，在365nm的紫外光照射下，隨著Mg摻雜量增加，UV光響應度隨之降低。 在n⁺AZO/i-ZnO/p-CuAlO2/ITO異質接面二極體方面，分別調整i層厚度為10nm、20nm及40nm，並同時製作在玻璃基板及PET基板上共6種二極體。啟動電壓和崩塌電壓皆隨i層厚度增加而增加。其整流特性最好者為: i層厚度10nm在玻璃基板上的異質接面二極體，啟動電壓為1.8V，崩潰電壓為-9.9V，其整流值在±4V時為 ，其UV光響應度在逆向偏壓-6V時為 A/W。

This thesis reports the deposition of n⁺AZO, n-ZnO, i-ZnO, n-MgxZn1-xO and p-CuAlO2 transparent conducting thin films by RF sputtering and the fabrication of transparent p-n hetero-junction thin film diode without additional heat treatment. Both commercial ITO coated glass and PET are used as substrates. Four device structures are studied here: (1) n⁺AZO/p-CuAlO2/ITO, (2) n⁺AZO/n-ZnO/p-CuAlO2/ITO, (3) n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO, (4) n⁺AZO/i-ZnO/p-CuAlO2/ITO. The I-V characteristics and UV responsivity of the thin film diodes with p-layer, n-layer and i- layer of different thickness are compared. In the n⁺AZO/p-CuAlO2/ITO p-n⁺ hetero-junction series, the thickness of p-type is varied: =100, 200, 300nm and the thickness of n⁺-type is varied as: =100, 200, 300nm. The turn-on voltage is about 0.8V. The breakdown voltage increases with the increase of the p-layer thickness while is independent of the n⁺-layer thickness. The on -glass p-n⁺ hetero-junction ( =300nm, =200nm) shows a rectify ratio of at ±4V and UV responsivity of A/W at -6V. In the n⁺AZO/n-ZnO/p-CuAlO2/ITO p-n hetero-junction series, the thickness chosen for p-layer and n-layer are: =100, 200, 300nm and =40, 80, 120nm, respectively. The turn-on voltage is about 2.0V. The breakdown voltage increases with the increase of p-layer and n-layer thickness. The on-glass p-n hetero-junction ( =200nm, =80nm) shows a rectify ratio of at ±4V and UV responsivity of A/W at -6V. In the n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO p-n hetero-junction series, the content of Mg in n-MgxZn1-xO is varied as: 0, 0.05, 0.1 and 0.3. The turn-on voltage and breakdown voltage increase as the content of Mg in n-MgxZn1-xO layer increases. Under the UV irradiation of 365nm, its responsivity decreases as Mg content in n-MgxZn1-xO layer increases. In the n⁺AZO/i-ZnO/p-CuAlO2/ITO p-i-n⁺ hetero-junction series, the thickness of i-type is varied as: =10, 20, 40nm. The turn-on voltage and breakdown voltage increase as the i-layer thickness increases. The on-glass p-i-n⁺ hetero-junction ( =10nm) shows a rectify ratio of at ±4V. The turn-on voltage is about 1.8V, the breakdown voltage is about -9.9V and the UV responsivity at -6V is A/W.