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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 王暉 | |
dc.contributor.author | Ping Chen | en |
dc.contributor.author | 陳平 | zh_TW |
dc.date.accessioned | 2021-06-15T05:42:35Z | - |
dc.date.available | 2012-08-20 | |
dc.date.copyright | 2010-08-20 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-08-20 | |
dc.identifier.citation | [1] B. Razavi, Design of Intergrated Circuits for Optical Communications, McGrawHill, 2003.
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[17] Xin Guan and Cam Nguyen, “Low-power-consumption and high-gain CMOS distributed amplifiers using cascade of inductively coupled common-source gain cells for UWB systems,” IEEE Trans. Microwave Theory and Tech., vol. 54, no. 8, Aug. 2006, pp. 3278-3283. [18] J.-C. Chien, T.-Y. Chen, and L.-H. Lu, “A 9.5-dB 50-GHz matrix distributed amplifier in 0.18-μm CMOS,” in Symp. VLSI Circuits Dig. Tech. Dig., Jun. 2006, pp. 182–183. [19] J. Kim, J. Plouchart, N. Zamdmer et al., “A 12dBm 320GHz GBW distributed amplifier in a 0.12μm SOI CMOS,” ISSCC Dig. Tech. Papers, pp. 478-479, Feb. 2004. [20] M.-D. Tsai, H. Wang, J.-F. Kuan and C.-S. Chang, “A 70GHz cascaded multi-stage distributed amplifier in 90nm CMOS Technology,” ISSCC Dig. Tech. Papers, pp. 402-403, Feb. 2005. [21] R.-C. Liu, T.-P. Wang, L.-H. Lu, and H. Wang, “An 80 GHz traveling-wave amplifier in a 90 nm CMOS technology,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2005, pp. 154–155. [22] K. Moez and M. Elmasry, “A 10dB 44GHz loss-compensated CMOS distributed amplifier,” ISSCC Dig. Tech. Papers, pp. 548-549, Feb. 2007. [23] A. Kopa and A. B. Apsel, “Alternative m-derived termination for distributed amplifiers,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2009, pp. 921–924. [24] L.-H. Lu, T.-Y. Chen, and Y.-J. Lin, “A 32-GHz non-uniform distributed amplifier in 0.18-μm CMOS,” IEEE Microwave and Wireless Component Lett., vol. 15, no. 11, pp. 745-747, November 2005. [25] J.-C. Chien and L.-H. Lu, “40Gb/s high-gain distributed amplifiers with cascaded gain stages in 0.18μm CMOS,” IEEE J. Solid-State Circuits, vol. 42, no. 12, pp. 2715–2725, December 2007. [26] Arbabian, A.; Niknejad, A.M., “A broadband distributed amplifier with internal feedback providing 660GHz GBW in 90nm CMOS,” ISSCC Dig. Tech. Papers, pp. 196-197, Feb. 2008. [27] K.-L. Deng, H. Wang, C. Glase, Malcolm G. Stubbs, “A miniature high gain and broadband MMIC distributed amplifier,” in Proc. IEEE 33rd Eur. Microwave Conf., Oct. 2003, pp. 615–618. [28] H.-L. Huang, M.-F. Chou, W.-S. Wuen, K. A. Wen, and C-Y. Chang,“A low power CMOS distributed amplifier,” in IEEE Annu. Wireless Microw. Tech. Conf., 2005, pp. 47-50. [29] B. Y. Banyamin and M. Berwick, “Analysis of the performance of four cascaded single-stage distributed amplifiers,” IEEE Trans. Microwave Theory Tech., vol. 48, pp. 2657–2663, Dec. 2000. [30] Sedra/Smith, Microelectronic Circuits, 5th ed., Oxford, 2004. [31] http://en.wikipedia.org/wiki/Main_Page [32] C. S. Aitchison, “The intrinsic noise figure of the MESFET distributed amplifier,” IEEE Trans. Microw. Theory Tech., vol. MTT-33, no. 6, pp.460–466, Jun. 1985. [33] W. S. Percival, “Thermionic value circuits,” British Patent 460562 January 1937. [34] E. L. Ginzton, W. R. Hewlett, J. H. Jasberg and J. D. Noe, “Distributed amplification,” Proceedings of the IRE, pp. 956-969, August 1948. 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[40] Chi Sun Yu, Ka Tsun Mok, Wing Shing Chan and Sai Wing Leung, “Switchless bi-directional amplifier,” in Asia-Pacific Microwave Conference, Dec. 2006, pp. 476–479. [41] T. Tsukii, S.G. Houng, M.J Schindler, “Wideband bidirectional MMIC amplifiers for new generation T/R module,” in IEEE MTT-S Int. Dig.., vol. 2, May 1990, pp. 907–910. [42] “Sonnet User’s Manual, Release 9.0,” Sonnet Software, Inc., May 2003, Syracuse, NY. [43] C. Caloz, A. Sanada and T. Itoh, “A novel composite right-/left-handed coupled-line directional coupler with arbitrary coupling level and broad bandwidth,” IEEE Trans. Microwave Theory Tech., vol. 52, no. 3, pp.980–992, March 2004. [44] A. Lai, C. Caloz, and T. Itoh, “Composite right/left-handed transmission line metamaterials,” IEEE Microwave Magazine, vol. 5, no. 3, pp. 34-50, September 2004. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/46876 | - |
dc.description.abstract | 隨著通訊技術的蓬勃,射頻電路正朝向更高頻率、更寬頻寬的趨勢發展。在寬頻系統中,如光纖通訊及超寬頻射頻通訊,由於傳輸速度快、資料量大,需要低成本、寬頻及平坦頻率響應的電路。而分佈式架構被廣為運用在寬頻放大器的實現。本論文回顧了分佈式放大器的基本操作原理及基礎定律。另一方面,探討過去幾年來分佈式放大器的發展,及不同分佈式架構間優缺點的比較。
接著,我們使用標準的0.18-μm CMOS製程設計並量測了兩個分佈式放大器。第一個為頻寬35 GHz的分佈式放大器。為了改善現有架構在增益、輸出功率與雜訊指數間的取捨,進而提出新的架構。此架構為傳統分佈式放大器與串接單級分佈式放大器的組合,可使寬頻放大器同時兼顧到增益、輸出功率與雜訊指數。從量測結果可知,此分佈式放大器有20.5 dB的小訊號增益,35 GHz的3-dB頻寬,371 GHz的增益頻寬積,8.5 dBm的最大輸出功率1dB壓縮點,而雜訊指數在5 GHz到26 GHz間介於6.8 dB到9.3 dB。晶片面積只有0.78平方毫米,而增益頻寬積對晶片面積的比例高達476 GHz/mm2。就我們所知,這個電路是目前0.18-μm CMOS分佈式放大器中,具有最高的增益頻寬積對晶片面積比例與最高的效能指數。和其它高階製程也有可比較的特性。 第二個為使用高通傳輸線的分佈式放大器,設計的頻段為22-29 GHz。因為電路架構的對稱性,此放大器有兩個放大訊號的路徑。將它運用於雙向系統中,可以達到放大器重複使用的特性。這個特性在需要大量元件才能達到高資料量傳輸的相位陣列中是重要的。相較於傳統分佈式放大器於雙向系統中運用,此放大器不需要額外的汲極偏壓電路,因為偏壓電路即是本身放大器的一部份。這也使得它僅需要較小的晶片面積。此晶片核心面積僅有0.17平方毫米。此分佈式放大器經由量測可得知在頻寬內,有12 dBm的最大輸出飽合功率,6.5 dBm的最大輸出功率1dB壓縮點,6.4 dB的小訊號增益,而且在兩個路徑上只有0.2 dB的差異。 | zh_TW |
dc.description.abstract | With the development of communication technologies, RF integrated circuits move toward higher frequencies, wider bandwidth. In wideband systems, such as optical communication and ultra-wide band (UWB) communication, circuits with low cost, wide bandwidth and flat frequency response are required. The distributed configurations extensively find applications in the realization of wideband amplifiers. The basic operation and fundamental principles of the conventional distributed amplifier are reviewed. On the other hand, the development of the distributed amplifier in the recent years is discussed, and the advantages and disadvantages among the different topologies of distributed amplifiers are compared.
Two distributed amplifiers using standard 0.18-μm CMOS technology were implemented and measured. The first one is a distributed amplifier with a bandwidth of 35 GHz. In order to resolve the trade-off among the gain, output power and noise figure in present topologies, a new topology is proposed. The topology is the combination of conventional distributed amplifier (CDA) and cascaded single-stage distributed amplifier (CSSDA), and it let wideband amplifier give considerations to the gain, output power and noise figure simultaneously. From the measurements, the distributed amplifier has a small signal gain of 20.5 dB, a 3-dB bandwidth of 35 GHz, and a gain-bandwidth product of 371 GHz. The maximum output 1-dB compression point (OP1dB) is 8.5 dBm and the noise figure is between 6.8 dB and 9.3 dB from 5 to 26 GHz. The chip size including testing pads is only 0.78 mm2, and the ratio of the gain-bandwidth to chip size achieves 476 GHz/mm2. To our knowledge, the circuit has the highest ratio of gain-bandwidth product to chip area and the highest figure of merit (FOM) in 0.18-μm CMOS, and it has a comparable performance with other advanced process. The second amplifier is a distributed amplifier using high-pass transmission lines, and its designed band is 22-29 GHz. Due to the symmetry of the circuit, the distributed amplifier has two paths to amplify the signals. When the distributed amplifier is used in bi-directional system, it can achieve the characteristic of amplifier reuse. The characteristic is important in phase array which requires many elements for high data rate communication. In contrast with conventional distributed amplifier used in bi-directional system, the amplifier does not need extra drain bias circuits since they are a part of the distributed amplifier. Hence, the chip size is smaller by using this approach. The core area is only 0.17 mm2 in this design. From the measurements, the distributed amplifier has a maximum saturation output power of 12 dBm, a maximum OP1dB of 6.5 dBm, and a small signal gain of 6.4 dB with only 0.2-dB difference in the two directions. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T05:42:35Z (GMT). No. of bitstreams: 1 ntu-99-R97942004-1.pdf: 12872175 bytes, checksum: d1d2e6bbcaa7d17a921d061cacb13c33 (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 iii ABSTRACT iv CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xvi Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.1.1 Optical Communication System [1] 2 1.1.2 RF Communication System [14] 3 1.2 Literature Survey 4 1.3 Contributions 7 1.4 Thesis Overview 8 Chapter 2 Overview of Distributed Amplifier 9 2.1 Introduction 9 2.2 Distributed Amplifier Architectures 10 2.2.1 Conventional Distributed Amplifier [14], [25] 10 2.2.2 Matrix Distributed Amplifier [18] 13 2.2.3 Cascaded Single-Stage Distributed Amplifier [16], [29] 15 2.2.4 Distributed Amplifier with Cascaded Gain Stages [25] 17 2.2.5 Distributed Amplifier with Internal Feedback [26] 18 2.3 Gain Cell Configurations 19 2.4 Bandwidth-Enhancing Techniques 26 2.4.1 M-Derived Technique 26 2.4.2 Capacitive Division Technique [21] 29 2.5 Group Delay [31] 30 2.6 Noise Figure of the Distributed Amplifier 31 Chapter 3 A Distributed Amplifier Using 0.18-μm CMOS Technology 34 3.1 Overview 34 3.2 Published Works 35 3.3 Proposed Distributed Amplifier Architecture 37 3.4 Circuit Design 38 3.5 Simulation Results 50 3.6 Measurement Results 56 3.7 Discussions 61 3.7.1 The procedure of removing the oscillation at the low frequency 61 3.7.2 Debugging 68 3.8 Summary 75 Chapter 4 A 22-31-GHz Distributed Amplifier Based on High-Pass Transmission Lines for Bi-Directional System Application 77 4.1 Overview 77 4.2 Published Works 78 4.3 Circuit Design 83 4.4 Simulation Results 90 4.5 Measurement Considerations and Measurement Results 98 4.6 Discussions 104 4.7 Summary 107 Chapter 5 Conclusions 108 REFERENCE 109 | |
dc.language.iso | en | |
dc.title | 應用於微波與毫米波之矽基分佈式放大器的研製 | zh_TW |
dc.title | Design of Si-Based Distributed Amplifiers for Microwave and Millimeter-Wave Applications | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林坤佑,張鴻埜,蔡政翰,蔡作敏 | |
dc.subject.keyword | 寬頻放大器,分佈式放大器(DA),互補式金氧半場效電晶體(CMOS),微波單晶積體電路(MMIC),左右手複合式傳輸線(CRLH-TL),雙向系統, | zh_TW |
dc.subject.keyword | wideband amplifier,distributed amplifier (DA),complementary metal-oxide-semiconductor (CMOS),monolithic microwave integrated circuit (MMIC),composite right/left-handed transmission line (CRLH-TL),bi-directional system, | en |
dc.relation.page | 113 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-08-20 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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