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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 胡振國 | |
dc.contributor.author | Kai-Chieh Chuang | en |
dc.contributor.author | 莊凱傑 | zh_TW |
dc.date.accessioned | 2021-06-15T05:27:18Z | - |
dc.date.available | 2011-07-21 | |
dc.date.copyright | 2010-07-21 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-07-15 | |
dc.identifier.citation | References
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/46749 | - |
dc.description.abstract | This dissertation was focused on the anodic oxidation (anodization) process. First, the anodization is used to improve the electricsl characteristics of high-k Al2O3 on Si substrate. Second, we grow SiO2 on n-type 4H-SiC substrate by anodization.
An anodic field was added in aqueous nitric acid for the improvements of high-k Al2O3 on Si in both current density and reliability. After being annealed in furnace at 650℃ in N2, Al2O3 with equivalent oxide thickness (EOT) of 24-25Å are prepared. It was found that the leakage current, breakdown field, and stress induced leakage current were much improved without sacrificing the interfacial property. This improvement can be ascribed to the compensation oxidation process. On the other hand, MOS solar cells with different Al2O3 thickness are investigated. The best case can achieve an efficiency of 7.2% when the incident light intensity equals 5 mW/cm2. Also, room-temperature anodization is introduced to prepare ultra-thin SiO2 on n-type 4H–SiC. Both the interfacial layer and carbon cluster are not observed. The capacitance equivalent thickness (CET) is about 27-48 Å, and the breakdown field of the grown oxide is higher than 5 MV/cm. The hysteresis of capacitance-voltage curves can be negligible. The positive current conduction is mainly dominated by the Schottky emission, while negative-biased current is limited by carrier generation-recombination. Furthermore, the frequency parameters of anodization were investigated. It is shown that the SiO2 on n-type 4H–SiC substrate by scanning frequency anodization has higher oxide breakdown field and better interfacial properties than that by DC anodization. It is suggested that both the bulk and interface traps in the oxide can be compensated since the scanning frequencies are in close proximity to the response times of interface states. The energy conveyed from the scanning frequency can rebuild the defect bonds in the interfacial region. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T05:27:18Z (GMT). No. of bitstreams: 1 ntu-99-F93943050-1.pdf: 23967932 bytes, checksum: 3b6ae1fc46dae1418c8d8c3158669628 (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | Abstract(Chinese).... I
Abstract(English).... II Contents.... III Figure Captions.... VI Table Captions.... X Chapter 1 Introduction....1 1-1 Research Motivation....1 1-2 The Development of Si and SiC Electronics And Its Challenge....3 1-2-1 High-k gate dielectrics on Si substrate....3 1-2-2 Properties of Al2O3 high-k gate dielectrics....4 1-2-3 Introduction to silicon carbide....7 1-2-4 Status of silicon oxides on silicon carbide and its challenge ....10 1-3 The Basic Concept of MOS Capacitor System....13 1-4 Anodization Technique....14 1-5 Measurement System....19 1-6 Organization of This Work....19 Chapter 2 Al2O3 on Si by Anodization in Nitric Acid....29 2-1 Introduction....29 2-2 Oxidation of Ultra-Thin Al Film....32 2-3 Experimental....34 2-4 MOS Capacitors with Al2O3 Prepared by Anodization in Nitric Acid....35 2-4-1 Thick Al2O3 prepared by FA-HNO3 and HNO3 methods....35 2-4-1-1 Capacitance-voltage and current-voltage properties....35 2-4-1-2 Temperature responses of gate current density....37 2-4-2 Thin Al2O3 prepared by FA-HNO3 and HNO3 methods....38 2-4-2-1 Capacitance-voltage characteristics....38 2-4-2-2 Interface properties....39 2-4-2-3 Equivalent oxide thickness versus gate leakage current....39 2-4-2-4 Stress induced leakage current....40 2-5 Photovoltaic effect....41 2-6 Summary....45 Chapter 3 SiO2 on N-type 4H–SiC Prepared by Anodization....70 3-1 Introduction....70 3-2 Experimental....74 3-3 MOS Capacitors with SiO2 Prepared by Anodization in D. I. water....75 3-3-1 Capacitance-voltage and current-voltage properties....75 3-3-2 Capacitance-voltage frequency dispersion....77 3-3-3 High-resolution transmission electron microscope images....79 3-3-4 Auger electron spectroscopy analysis....79 3-3-5 Conduction mechanism in positive bias region....80 3-4 Minority Carrier Responses....81 3-4-1 Minority carrier generation under illumination....81 3-4-2 Intrinsic carrier concentration enhanced by heating....82 3-4-3 Conduction mechanism in negative bias region....82 3-5 Summary....85 Chapter 4 Observation of Scanning Frequency Effect on N-type 4H-SiC Anodization....100 4-1 Introduction....100 4-2 Conductance Method for Interface State Extraction....101 4-3 Experimental....102 4-4 MOS Capacitors with Anodic SiO2 Grown by DC-, CF-, and SF-ANO Technique....104 4-4-1 Capacitance-voltage properties....104 4-4-2 Current-voltage properties and dielectric breakdown field....104 4-4-3 Interface state density as a function of energy....105 4-4-4 Carrier response time....106 4-4-5 Charge trapping behavior under constant current stress (CCS)....107 4-5 Summary....108 Chapter 5 Conclusions....117 5-1 Conclusions....117 5-2 Future Work....119 References....123 | |
dc.language.iso | en | |
dc.title | 以陽極氧化技術在矽及碳化矽基板上備製超薄閘極介電層之研究 | zh_TW |
dc.title | Investigation of Anodic Oxidation Technique for the Preparation of Ultra-thin Gate Dielectrics on Si and SiC Substrates | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 李明逵,武東星,鄭晃忠,王水進,龔正,洪志旺 | |
dc.subject.keyword | 高介電系數閘極氧化層,陽極氧化,碳化矽,金氧半太陽能電池,頻率色散, | zh_TW |
dc.subject.keyword | High-k gate dielectrics,anodization,SiC,MOS solar cell,frequency dispersion, | en |
dc.relation.page | 136 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-07-15 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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