請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45930完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 彭隆瀚(Lung-Han Peng) | |
| dc.contributor.author | Chen-Yen Lin | en |
| dc.contributor.author | 林均彥 | zh_TW |
| dc.date.accessioned | 2021-06-15T04:49:08Z | - |
| dc.date.available | 2015-08-13 | |
| dc.date.copyright | 2010-08-13 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-08-03 | |
| dc.identifier.citation | 1 E. F. Schubert, Light-Emitting Diodes. Cambridge University Press, 2006.
2 S. Nakamura, 'InGaN-based blue laser diodes,' Selected Topics in Quantum Electronics, IEEE Journal of, vol. 3, pp. 712-718, 1997. 3 S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, 'InGaN-based multi-quantum-well-structure laser diodes,' Japanese Journal of Applied Physics Part 2-Letters, vol. 35, pp. L74-L76, Jan 15 1996. 4 T. Mukai, H. Narimatsu, and S. Nakamura, 'Amber InGaN-based light-emitting diodes operable at high ambient temperatures,' Japanese Journal of Applied Physics Part 2-Letters, vol. 37, pp. L479-L481, May 1 1998. 5 S. Nakamura, T. Mukai, and M. Senoh, 'High-Power Gan P-N-Junction Blue-Light-Emitting Diodes,' Japanese Journal of Applied Physics Part 2-Letters,.vol. 30, pp. L1998-L2001, Dec 1 1991. 6 S. Nakamura, T. Mukai, and M. Senoh, 'Candela-Class High-Brightness Ingan/Algan Double-Heterostructure Blue-Light-Emitting Diodes,' Applied Physics Letters, vol. 64, pp. 1687-1689, Mar 28 1994. 7 T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Applied Physics Letters, vol. 84, no. 6, pp. 855–857, 2004. 8 H. W. Huang, C. C. Kao, J. I. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photonics Technology Letters, vol. 17, no. 5, pp. 983–985, 2005. 9 T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, “III-nitride blue and ultraviolet photonic crystal light emitting diodes,” Applied Physics Letters, vol. 84, no. 4, pp. 466–468, 2004. 10 R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Dohler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Applied Physics Letters, vol. 79, no. 15, pp. 2315–2317, 2001. 11 X. C. Wang, S. J. Xu, S. J. Chua, K. Li, X. H. Zhang, Z. H. Zhang, K. B. Chong, and X. Zhang, “Strong influence of SiO2 thin film on properties of GaN epilayers,” Applied Physics Letters, vol. 74, no. 6, pp. 818–820, 1999. 12 L. H. Peng, C. H. Liao, Y. C. Hsu, C. S. Jong, C. N. Huang, J. K. Ho, C. C. Chiu, and C. Y. Chen, “Photoenhanced wet oxidation of gallium nitride,” Ap¬plied Physics Letters, vol. 76, no. 4, pp. 511–513, 2000. 13 C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High-efficiency InGaN light-emitting diodes via sidewall selective etching and oxidation,” Journal of the Electrochemical Society, vol. 153, no. 1, pp. G39–G43, 2006. 14 Tetsuya TAKEUCHI, Shigetoshi SOTA, Maki KATSURAGAWA, Miho KOMORI, Hideo TAKEUCHI, Hiroshi AMANO and Isamu AKASAKI, “ Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells,” Japanese Journal of Applied Physics, vol. 36, no. 4A, pp. L382-L 385, 1997. 15 C. F. Lin, C. C. Yang, J. F. Chien, C. M. Lin, K. T. Chen, and S. K. Yen, “ Fabrication of the InGaN-based light-emitting diodes through a photoelectrochemical process,” IEEE Photonics Technology Letters, vol. 21, no. 16, pp. 1112–1114, 2009. 16 C. L. Haynes and R. P. Van Duyne, “Nanosphere lithography: A versatile nanofabrication tool for studies of size-dependent nanoparticle optics,” J. Phys. Chem. B 105, 5599 (2001). 17 H. W. Deckman and J. H. Dunsmuir, “Natural lithography,” Appl. Phys. Lett. 41, 377 (1982). 18 S. H. Park, B. Gates, and Y. Xia, “A three-dimensional photonic crystal operating in the visible region,” Adv. Mater. 11, 462 (1999). 19 黃培誠, “以微米小球顯影術及光致電化學蝕刻法製作氮化鎵次微米三角柱結構,” 國立台灣大學光電工程研究所碩士論文,2006. 20 巫漢敏, “亞波長透鏡陣列技術於光電半導體元件之應用,” 國立台灣大學光電工程研究所博士論文,2009. 21 W. A. Murray, S. Astilean, and W. L. Barnes, “Transition from localized surface plasmon resonance to extended surface plasmon-polariton as metallic nanoparticles merge to form a periodic hole array,” Phys. Rev. B 69, 165407 (2004). 22 C. L. Haynes, and R. P. Van Duyne, “Nanosphere lithography: A versatile nanofabrication tool for studies of size-dependent nanoparticle optics,” J. Phys. Chem. B 105, 5599 (2001). 23 D. G. Stavenga, S. Foletti, G. Palasantzas, and K. Arikawa, “Light on the moth-eye corneal nipple array of butterflies,” Proc. R. Soc. B 273, 661 (2006). 24 H. Sai, Y. Kanamori, K. Arafune, Y. Ohshita, and M. Yamaguchi, “Light trapping effect of submicron surface textures in crystalline Si solar cells,” Prog. Photovolt. Res. Appl. 15, 415 (2007). 25 M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Morkoc, “Low-Resistance Ohmic Contacts on Wide Band-Gap GaN,” Applied Physics Letters, vol. 64, no. 8, pp. 1003–1005, 1994. 26 D. F. Wang, S. W. Feng, C. Lu, A. Motayed, M. Jah, S. N. Mohammad, K. A. Jones, and L. Salamanca-Riba, “Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN,” Journal of Applied Physics, vol. 89, no. 11, pp. 6214–6217, 2001. 27 Z. F. Fan, S. N. Mohammad, W. Kim, O. Aktas, A. E. Botchkarev, and H. Morkoc, “Very low resistance multilayer ohmic contact to n-GaN,” Applied Physics Letters, vol. 68, no. 12, pp. 1672–1674, 1996. 28 E. F. Chor, D. Zhang, H. Gong, G. L. Chen, and T. Y. F. Liew, “Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN,” Journal of Applied Physics, vol. 90, no. 3, pp. 1242–1249, 2001. 29 V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, “Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN,” Journal of Ap-plied Physics, vol. 92, no. 3, pp. 1712–1714, 2002. 30 J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen, and K. K. Shih, “Low-resistance ohmic contacts to p-type GaN,” Applied Physics Let¬ters, vol. 74, no. 9, pp. 1275–1277, 1999. 31 Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami, “Effects of annealing in an oxygen ambient on electrical proper¬ties of ohmic contacts to p-type GaN,” Journal of Electronic Materials, vol. 28, no. 3, pp. 341–346, 1999. 32 L. Y. Chen, Y. Y. Huang, C. H. Chang, Y. H.Sun, Y. W. Cheng, M. Y. Ke, C. P. Chen, and J. J. Huang,” High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Optical Express, vol. 18, no. 8, pp. 7665–7669, 2010. 33 M. L. Wu, Y. C. Lee, P. S. Lee, C. H. Kuo, and J. Y. Chang, “ III–Nitride-Based Microarray Light-Emitting Diodes with Enhanced Light Extraction Efficiency,” Japanese Journal of Applied Physics, vol. 47, no. 8, pp. 6757-6759, 2008. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45930 | - |
| dc.description.abstract | 本研究論文在探討使用自組小球顯影技術製作出氮化銦鎵�氮化鎵微米柱結構發光二極體元件與特性量測，第一部分重點在於自組小球顯影技術的原理與實施，我們成功地利用旋轉塗佈的方式在晶片上鋪設出單層緊密堆積的一微米聚苯乙烯小球，除了利用鋪設好的小球當作遮罩，再利用感應偶合電漿蝕刻出微米柱結構的氮化銦鎵�氮化鎵發光二極體，我們也在矽基板與氮化鎵基板上，利用不同的蝕刻參數，蝕刻出一微米透鏡陣列的結構，未來可應用在雷射光斑去除與發光二極體表面粗糙化等。
第二部分，我們利用實驗室成熟的光致電化學氧化層鈍化技術，搭配塗佈式玻璃材料(Spin-On-Glass)與機械化學研磨(CMP)的平坦化製程，成功完成具微米柱結構發光二極體元件製程技術之開發。在電性量測中，具氧化鈍化層之微米柱發光二極體元件漏電流，相較於未氧化之元件，在-5V時從2.358uA大幅降低到53nA；在L-I曲線中，觀察到在高電流密度下，比起平面型的元件相比，有著較高的斜率。而在電激發光輻射場型的量測中，可觀察到微米三角柱結構發光二極體在側向角度之出光上，與一般平面型發光二極體相比，具有較大角度的出光強度，遠場輻射的半強度張角從61°增加到82°，增加了21°。 | zh_TW |
| dc.description.abstract | The fabrication and characterization of InGaN/GaN micro rod light-emitting diode (LED) using self-assembled nanosphere lithography are investigated in this thesis. First, we discuss the theory and process of self-assemble nanosphere lithography. We successfully use spin coating to spread out single layer close-packed 1um polystyrene spheres. The self-assembled sphere are the mask for etching InGaN/GaN micro rod LED. Moreover,we report the use of recessive size reduction in self-assembled sphere mask with reactive ion etching to from micro-lens array onto surface of Si and GaN. It can apply to laser despeckling and surface roughness.
Second, we successfully combine the chemical mechanical polishing (CMP) planarization and photoelectrochemical(PEC) pas¬sivation technique to fabricate micro rod structure light-emitting diode. Leakage current of this device with oxide passivation layer is reduced from 2.358uA to 53nA at reverse bias 5V compared to the device without oxide layer. Moreover, the radiation pattern shows that the percentage of light intensity in oblique angle of micro rod LED is higher than that of typical planar LED. The far-field radiation angle at half maximum intensity is occurs at 82°, FWHM angle is 164°. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T04:49:08Z (GMT). No. of bitstreams: 1 ntu-99-R97941081-1.pdf: 3242615 bytes, checksum: 46dba112fc3a7856a2c206369da5cf46 (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | 第一章 1
導論 1 1-1 前言 1 1-2 研究動機 4 1-3 論文架構 7 第二章 8 自組小球顯影技術 8 2-1 自組小球顯影技術 8 2-2 自組小球顯影技術製程 12 2-2-1 小球旋轉塗佈法 13 2-2-2 靜置蒸發法 15 2-3 自組小球顯影技術之應用 17 第三章 19 微米柱發光二極體製程 19 3-1 相關製程技術-歐姆接觸 19 3-2 相關製程技術-光致電化學氧化法 23 3-3 相關製程技術-平坦化製程 27 3-4 氮化銦鎵/氮化鎵微米柱發光二極體之研製 33 第四章 42 氮化銦鎵/氮化鎵微米柱發光二極體量測結果與討論 42 4-1 電性量測 42 4-2 脈衝電激發光頻譜 47 4-3 發光輻射場型 50 第五章 54 結論 54 5-1 結論 54 5-2 未來展望 56 參考文獻 57 | |
| dc.language.iso | zh-TW | |
| dc.subject | 微米柱 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 自組小球顯影技術 | zh_TW |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | micro rod | en |
| dc.subject | nanosphere lithography | en |
| dc.subject | GaN | en |
| dc.subject | light-emitting diode | en |
| dc.title | 使用自組小球顯影技術研製氮化銦鎵/氮化鎵微米柱結構發光二極體 | zh_TW |
| dc.title | Fabrication and Characterization of InGaN/GaN
Micro Rod Structure Light-Emitting Diode Using Self-assembled Nanosphere Lithography | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃建璋(Jian-Jang Huang),吳育任(Yuh-Renn Wu),賴志明(Chih-Ming Lai) | |
| dc.subject.keyword | 自組小球顯影技術,氮化鎵,微米柱,發光二極體, | zh_TW |
| dc.subject.keyword | nanosphere lithography,GaN,micro rod,light-emitting diode, | en |
| dc.relation.page | 60 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-08-03 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-99-1.pdf 未授權公開取用 | 3.17 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。