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標題: | 利用原子層沉積技術成長n型與p型氧化鋅薄膜及其光電特性研究 Characteristics of n-type and p-type ZnO Films Grown by Atomic Layer Deposition |
作者: | Ying-Shen Kuo 郭盈伸 |
指導教授: | 陳敏璋 |
關鍵字: | 原子層沉積技術,p型氧化鋅,砷化鎵,離子佈植,氧化鋅鎂, Atomic Layer Deposition (ALD),p-type ZnO,GaAs,Ion implantation,MgZnO, |
出版年 : | 2010 |
學位: | 碩士 |
摘要: | 本論文利用原子層沉積技術 (Atomic Layer Deposition, ALD)成長鈦(Ti)摻雜與鎂(Mg)摻雜之氧化鋅(ZnO)薄膜並研究其光電特性。本論文分為三個不同的主題,第一個研究主題為成長鈦摻雜之氧化鋅(Titanium-doped ZnO, ZnO:Ti)薄膜於藍寶石(sapphire)基板上,研究結果顯示ZnO:Ti薄膜具有高的載子濃度(2.6 x 1020 cm-3) 、低電阻率(9.7 x 10-4Ω-cm)以及高的可見光穿透度(>93%)。因而被視為有機會取代ITO之透明導電薄膜。此外由光激發光(photoluminescence, PL)的量測可以得知,ZnO:Ti薄膜於380nm 波段具有相當強的自發性發光(spontaneous emission),且PL頻譜呈現近乎無缺陷(defect-free)的狀態,且在室溫下具有相對低之雷射閥值(約為153 kW/cm2)。
第二個部分為成長氧化鋅薄膜於砷化鎵(GaAs)基板上,並在氧氣(oxygen)氣氛下經由熱退火處理以製作p型氧化鋅。隨著退火溫度的上升,可以觀察到電子濃度明顯的下降,以及p型導電型態的出現。我們可以得到具有高的電洞濃度 (3.44×1020 cm-3)和低電阻率(7.51×10-4 Ω-cm) 的p型氧化鋅薄膜,p型導電型態可以持續穩定超過至240天。推測原因為熱退火處理使得砷原子擴散進入ZnO中形成如AsZn-2VZn等複合物(Complex),形成受子能階(acceptor level)以提供電洞。 最後一部分為在藍寶石基板上成長不同鎂摻雜濃度之氧化鋅薄膜,並以離子佈植技術(Ion Implantation)將砷離子佈植進入氧化鋅鎂(MgZnO)薄膜當中。當鎂摻雜濃度達20%時,室溫PL頻譜中可以觀察到近能隙發光(near-band-edge emission)發生明顯藍位移的現象(181meV)。另外研究結果指出,鎂的摻雜濃度和退火溫度對薄膜的電性影響甚鉅,可以得到電洞濃度為5.3x1016 cm-3之p型氧化鋅鎂薄膜。 This thesis can be divided into three different parts. The first topic is the fabrication and optical characteristics of Ti-doped ZnO films, the second topic reports the formation of p-type ZnO deposited by ALD on GaAs substrate, and the third topic presents the characteristics of Arsenic-implanted MgZnO films. The ZnO:Ti films deposited by ALD exhibited low resistivity (9.7 x 10-4Ω-cm), high carrier concentration (2.6 x 1020 cm-3), and high transparency (>93%) in the visible spectrum. As a result, the ZnO:Ti films are considered to be a promising substitute for ITO films. Photoluminescence (PL) spectra consisted of a strong spontaneous emission associated with the near-band-edge emission at 380 nm and a negligible defect-related band. The optically-pumped stimulated emission with a low threshold intensity 153 kW/cm2 was observed at room temperature, indicating a good optical and crystalline quality of the of ZnO:Ti films. Long-term stable p-type ZnO films were grown by atomic layer deposition (ALD) on semi-insulating GaAs substrates and followed by thermal treatements. The p-type ZnO film with a hole concentration as high as 3.44×1020 cm-3 and long-term stability up to 240 days was obtained. The results can be attributed to the diffusion of arsenic atoms from GaAs into ZnO as well as the activation of As-related acceptors by the thermal treatment. The final part of the thesis reports the characteristics of arsenic-implanted MgZnO films. The electrical properties of As-implanted MgZnO films were significantly influenced by the annealing temperature and Mg-doping concentration. As the doping of Mg content in the ZnO films increased, a blueshift in the PL spectrum was observed. The p-type As-implanted MgZnO film with a hole concentration of 5.3x1016 cm-3 was obtained in this study. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45821 |
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顯示於系所單位: | 材料科學與工程學系 |
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