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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 蔡定平(Din Ping Tsai) | |
dc.contributor.author | Bo-Han Chen | en |
dc.contributor.author | 陳柏翰 | zh_TW |
dc.date.accessioned | 2021-06-15T04:45:50Z | - |
dc.date.available | 2015-08-12 | |
dc.date.copyright | 2010-08-12 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-08-06 | |
dc.identifier.citation | [1-1] 邱國斌、蔡定平「金屬表面電漿簡介」,物理雙月刊,第廿八卷第二期,472-485 頁(2006)。
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45769 | - |
dc.description.abstract | 隨著元件尺寸的縮小(scaling),電漿子學(Plasmonic)為目前奈米光學領域中熱門的議題,本論文利用雷射作為熱源發展出可製作微米及次微米級結構的系統,並選擇金薄膜作為研究對象,將其實驗結果分析討論,給予一個簡單的物理機制圖像,為研究電漿子學領域提供一個新穎、快速製作元件的方法。物理機制的推測結果在相變化材料鍺銻碲(Ge2Sb2Te5)的實驗中也觀測到類似結果,應用實驗結果,我們成功將微米級的圖檔樣貌,以次微米級的單位精準度控制,將其質量轉移至另一基板上。
系統架構利用飛秒脈衝(Femto-second pulse)雷射做為短時間高能量光源,雷射光經高倍率油鏡(100X, NA 1.4)聚焦至金奈米薄膜(Gold thin film)樣品上。樣品製作部分我們將金濺鍍(DC sputter coating)於透明基板上,稱為母板(Donor side)。並在金薄膜上方加蓋一片玻璃基板,稱為子板(Receiver side)。藉由電腦控制三軸式奈米平移台的移動,可以控制雷射光聚焦在金膜上的位置。我們調整薄膜厚度與雷射照度,並使用原子力顯微儀觀察其不同實驗條件下的微觀結構。在高雷射照度下,金可以從母板轉移質量至子板,且此特性也成功適用於其他不同金屬材質,利用雷射推進質量移轉技術我們成功從母板轉移一張由相變化材料Ge2Sb2Te5薄膜材料組成的圖檔(293x283 pixel)到子板,大小為50 um x 50 um。在低雷射照度下,金膜母板則形成最小直徑為250 nm的凸起結構,利用此結構排出Y形波導(Y-splitter)。關於雷射推進質量轉移和金膜圓柱隆起的物理機制包含在分析討論內。 實用性,雷射推進質量移轉技術可將不同的金屬轉移到同一個位置基板上,製作出微米裝置(Microdevice),例如天線、電路。以及利用雷射光在低雷射照度下,製作奈米結構,例如電漿波導(Plasmonic waveguide)。顯示此技術具有奈米製作能力,且具有低複雜低成本的優點。 | zh_TW |
dc.description.abstract | Laser-induced forward transfer (LIFT) is a simple, fast, one-step process technology, which utilizes the short pulse laser to remove the material from a donor thin film to a receiver substrate. In this thesis, we present a method of the deposited dots by using femto-second LIFT for the gold thin films with the thickness: 20, 30, and 40 nm. Each gold thin film was deposited on a glass substrate by a sputter in an argon chamber with the pressure 0.5 Pa. The growth rate of the gold thin film is 0.2 nm/s. The samples were mounted on a x-y-z stage that positions the sample with a resolution of 0.4 nm relative to a 100X microscope objective and is subsequently irradiated by the Ti:sapphire laser (wavelength λ= 800 nm) with pulse duration of 140 fs and 80 MHz repetition rate. The topography of sample is studied by atomic force microscopy (AFM). Through the observaed morphologies of the receiver side and donor side, the following three zones can be observed. (1) Below the first laser fluence threshold, JT1, no structure formation on the donor film and the receiver substrate was found. (2) Between JT1 and second fluence threshold, JT2, the donor film forms a cylindrical shaped bump, with the size around 18 nm (thickness) x 250 nm (diameter), and gold was transferred to the receiver substrate and formed an island-like geomorphology with nanometer grains. Their sizes are around 5 nm (thickness) x 20 nm (diameter) for LIFT 20 nm-thick donor film. We attribute this phenomenon to phase explosion occurring almost in the superheated liquid free surface of source film. (3) Above JT2, the donor film is ablated and the elevated rim structure, which diameter size is around 300 nm. In receiver substrate, the deposited dots form a disk shaped, which size is around 27 nm (thickness) x 900 nm (diameter) for LIFT 30 nm-thick donor film. Possible mechanisms leading to the observed dots form the resolution limits of this technique are also discussed. The dots of nanothickness thin films via laser pulses may provide a simple and efficient method for fabrication of nanoscale structures, e.g. plasmonic devices. Thus, LIFT technique provides a relatively simple method for the combination of the multiple dissimilar materials within a single microdevice. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T04:45:50Z (GMT). No. of bitstreams: 1 ntu-99-R97245011-1.pdf: 9607042 bytes, checksum: b2d7bbe45168c96ab159cf08810d257d (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | 口試委員會審定書 ........................................................................................................... I
誌謝 .................................................................................................................................. II 中文摘要 ........................................................................................................................ III Abstract ........................................................................................................................... IV 目錄 .................................................................................................................................. V 圖目錄 .......................................................................................................................... VIII 表目錄 ....................................................................................................................... XVIII 第一章、奈米光學與元件函工簡介 .............................................................................. 1 1.1 奈米光學發展近況 .......................................................................................... 1 1.1.1 光子學與奈米光子學 .......................................................................... 1 1.1.2 電漿子學(Plasmonics) ......................................................................... 2 1.2 奈米元件製作技術簡介 ................................................................................ 12 1.2.1 常見微影術:電子束微影與聚焦離子束微影 ................................ 12 1.2.2 掃描探針印刷術(Scanning Probe Lithography) ............................... 14 1.2.3 奈米轉印(Molding)與壓印(Embossing)技術 ................................... 15 1.2.4 自組裝(Self-Assembly)技術 ............................................................. 17 1.3 雷射直寫式微影技術 .................................................................................... 20 1.3.1 雷射推進質量轉移(Laser-induced forward transfer) ....................... 22 1.3.2 雷射推進質量轉移技術種類 ............................................................ 23 1.3.3 雷射推進質量轉移技術之應用與文獻回顧 .................................... 24 1.4 論文動機與目的 ............................................................................................ 26 1.5 參考文獻 ........................................................................................................ 27 第二章、實驗架構與製作流程 .................................................................................... 31 2.1 濺鍍製膜系統 ................................................................................................ 31 2.1.1 儀器介紹與原理 ................................................................................ 31 2.1.2 膜層製備 ............................................................................................ 33 2.2 雷射光學系統(Laser and Optical system) .................................................... 34 2.2.1 光學系統架構 .................................................................................... 34 2.2.2 儀器介紹 ............................................................................................ 35 2.3 雷射微影控制流程 ........................................................................................ 43 2.3.1 圖形座標化 ........................................................................................ 43 2.3.2 程式參數設定 .................................................................................... 44 2.3.3 雷射光斑聚焦高度修正補償 ............................................................ 44 2.3.4 雷射微影系統模式 ............................................................................ 46 2.4 原子力顯微儀量測系統 ................................................................................ 48 2.4.1 儀器介紹與原理 ................................................................................ 48 2.4.2 原子力顯微儀工作模式 .................................................................... 49 2.5 參考文獻 ........................................................................................................ 52 第三章、實驗結果與分析討論 .................................................................................... 53 3.1 光學系統對雷射凾率衰減之量測 ................................................................ 53 3.2 金薄膜結果 .................................................................................................... 55 3.2.1 金膜厚= 20 nm 質量轉移實驗結果 ................................................. 55 3.2.2 金膜厚= 30 nm 質量轉移實驗結果 ................................................. 60 3.2.3 金膜厚= 40 nm 質量轉移實驗結果 ................................................. 64 3.2.4 數據總整理與預測圖 ........................................................................ 68 3.3 金薄膜實驗結果分析 .................................................................................... 70 3.3.1 雷射對金屬材料作用(Laser material processing) ............................ 70 3.3.2 雷射照射金薄膜之可能的反應機制 ................................................ 72 3.3.3 反應機制疊函結果 ............................................................................ 75 3.4 鍺銻碲薄膜結果 ............................................................................................ 77 3.5 比較金與鍺銻碲薄膜 .................................................................................... 84 3.6 參考文獻 ........................................................................................................ 85 第四章、實驗結果之應用 ............................................................................................ 87 4.1 金奈米陣列結構製作 .................................................................................... 87 4.2 質量轉移技術 ................................................................................................ 91 4.2.1 金質量轉移層應用於薄膜太陽能電池 ............................................ 91 4.2.2 微米級面積次微米級圖形質量轉移(Micro printer) ........................ 92 4.2.3 利用 LIFT 技術製作超穎材料 ......................................................... 95 4.3 參考文獻 ........................................................................................................ 99 第五章、結論與展望 .................................................................................................. 101 5.1 參考文獻 ...................................................................................................... 102 | |
dc.language.iso | zh-TW | |
dc.title | 應用超快雷射對表面電漿薄膜做質量轉移與製作奈米結構之研究 | zh_TW |
dc.title | Mass transfer and nano-fabrication by ultrafast laser interactions on plasmonic thin films | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 石明豐(Ming-Feng Shih),藍永強(Yung-Chiang Lan),林鶴南(Heh-Nan Lin) | |
dc.subject.keyword | 表面電漿,飛秒雷射,質量轉移,鍺銻碲,奈米電漿結構,奈米製程, | zh_TW |
dc.subject.keyword | Surface Plasmons,Ultrafast laser,Thermal effect,Gold thin film,Ge2Sb2Te5,Laser-induced forward transfer,Plasmonic nanostructure,Nanolithography, | en |
dc.relation.page | 102 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-08-06 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 應用物理所 | zh_TW |
顯示於系所單位: | 應用物理研究所 |
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