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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳建彰 | |
| dc.contributor.author | Chih-Hung Wu | en |
| dc.contributor.author | 吳志鴻 | zh_TW |
| dc.date.accessioned | 2021-05-14T17:43:35Z | - |
| dc.date.available | 2015-08-07 | |
| dc.date.available | 2021-05-14T17:43:35Z | - |
| dc.date.copyright | 2015-08-07 | |
| dc.date.issued | 2015 | |
| dc.date.submitted | 2015-08-06 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/4574 | - |
| dc.description.abstract | 本研究利用快速大氣電漿燒結製程，製作氧化釔/奈米碳管複合材料，其具有導電性和抵抗低壓電漿侵蝕的能力。快速大氣電漿燒結製程所需的時間只需要3秒至5秒，即可燒結完成。在摻入奈米碳管後的複合材料，其電導率也會因此顯著的增加。用網印法製作而成的試片，試片裡所組成的奈米碳管和含碳物質會與氮氣大氣電漿產生劇烈反應在快速燒結的過程中。然而，此複合材料在低壓三氟甲烷感應耦合電漿(CHF3 ICP)的蝕刻下，表現很好的抗電漿侵蝕能力。並在低壓三氟甲烷感應耦合電漿侵蝕30分鐘後，複合材料的電導率維持在同一個級距。說明這個塗層可做為保護層在低壓電漿裝置中，且在低壓電漿系統中，有高電導率的材料有利於防止電弧發生與累積電荷。 | zh_TW |
| dc.description.abstract | We developed an ultrafast sintering process for a conductive low-pressure-plasma-resistant Y2O3/carbon-nanotube composite using an atmospheric pressure plasma jet. The processing time can be as short as 3 to 5 s. The incorporation of carbon nanotubes (CNTs) significantly improves the conductivity. N2 APPJ reacts violently with the CNTs and carbonaceous materials in the screen-printed pastes, rendering ultra-short processing. However, the synthesized films show great erosion resistance to low-pressure CHF3 inductively coupled plasma (ICP). The conductivity remains in similar level after exposing to the CHF3 ICP for 30 min. This coating can serve as a protection layer in low-pressure plasma environment. The high conductivity (>0.01 S cm-1) is advantageous in preventing arcing or charging effects in the low-pressure plasma environment. | en |
| dc.description.provenance | Made available in DSpace on 2021-05-14T17:43:35Z (GMT). No. of bitstreams: 1 ntu-104-R02543050-1.pdf: 7674224 bytes, checksum: e3f22ddd04d6ab6abd39deaf4f4aad59 (MD5) Previous issue date: 2015 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 iii Abstract iv 目錄 v 圖目錄 viii 表目錄 xiii 第一章 緒論 1 1.1 前言 1 1.2 研究動機 2 1.3 論文架構 3 第二章 理論與文獻回顧 4 2.1 氧化釔(Yttrium Oxide, Y2O3)之基本性質 4 2.1.1 氧化釔之晶體結構 4 2.1.2 抗電漿能力 5 2.2 奈米碳管(CNT)之基本性質 9 2.2.1 導電性與機械性質 10 2.3 常壓電漿 11 2.3.1 大氣電漿種類與工作原理 12 2.3.2 常壓電漿的優勢 15 第三章 實驗方法與流程 16 3.1 實驗藥品與量測儀器 16 3.2 實驗規劃 18 3.3 實驗流程 20 3.3.1 基板清洗 20 3.3.2 氧化釔/奈米碳管漿料製作 21 3.3.3 以網印法製備氧化釔/奈米碳管試片實驗流程 23 3.3.4 奈米碳管/氧化釔於ITO玻璃網印製程(上電極) 25 3.3.5 奈米碳管/氧化釔於ITO玻璃網印製程(下電極) 26 3.4 製程儀器與原理 27 3.4.1 迴旋濃縮機 27 3.4.2 網版印刷機 28 3.4.3 大氣電漿(Atmospheric pressure plasma jet, APPJ)退火處理 29 3.4.4 電子束蒸鍍機(E-beam evaporator) 31 3.4.5 感應耦合電漿蝕刻系統(Inductively coupled plasma, ICP) 33 3.5 量測儀器與原理 35 3.5.1 紫外光-可見光光譜儀(UV-Visible spectrometer) 35 3.5.2 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM) 36 3.5.3 X光繞射儀(X-ray Diffraction, XRD) 38 3.5.4 傅立葉轉換紅外光光譜儀(Fourier-Transform Infrared Spectrometer, FTIR) 40 3.5.5 光放射頻譜儀 42 3.5.6 兩點探針電性量測 43 第四章 實驗結果與討論 44 4.1 大氣噴射電漿溫度變化趨勢 44 4.2 大氣電漿放光頻譜分析 46 4.3 SEM 表面形態分析 48 4.4 光學性質分析 55 4.5 X光繞射分析 58 4.6 傅立葉轉換紅外線光譜 62 4.7 抗電漿電性分析 64 4.8 抗電漿蝕刻分析 68 第五章 結論與未來展望 71 第六章 附錄 72 6.1 附錄A 電子束蒸鍍氧化釔薄膜基本性質分析 72 6.1.1 X光繞射分析 72 6.1.2 穿透率分析 75 6.1.3 薄膜表面型態分析 76 6.1.4 電子束蒸鍍氧化釔薄膜於藍寶石基板上之SEM圖與XRD分析 79 6.2 附錄B 溶膠-凝膠法製備氧化釔薄膜之實驗結果 81 6.2.1 氧化釔溶膠-凝膠法溶液配製 81 6.2.2 X光繞射分析 86 6.2.3 穿透率分析 87 6.2.4 SEM薄膜截面型態分析 88 6.3 附錄C 氧化釔/奈米碳管複合材料EPMA分析 89 6.4 附錄D 氧化釔/奈米碳管複合材料光響應之實驗結果 91 6.5 附錄E 聚二甲基矽氧烷製備 94 參考文獻 98 | |
| dc.language.iso | zh-TW | |
| dc.subject | 氧化釔 | zh_TW |
| dc.subject | 奈米碳管 | zh_TW |
| dc.subject | 大氣電漿 | zh_TW |
| dc.subject | Carbon nanotube | en |
| dc.subject | Y2O3 | en |
| dc.subject | APPJ | en |
| dc.title | 快速大氣噴射電漿燒結奈米孔隙氧化釔/奈米碳管複合材料 | zh_TW |
| dc.title | Rapid Atmospheric-Pressure-Plasma-Jet Sintered Nanoporous Y2O3/Carbon Nanotube Composites | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 103-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳奕君,張世航 | |
| dc.subject.keyword | 氧化釔,奈米碳管,大氣電漿, | zh_TW |
| dc.subject.keyword | Y2O3,Carbon nanotube,APPJ, | en |
| dc.relation.page | 100 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2015-08-06 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
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