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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 王暉 | |
dc.contributor.author | Ping-Sung Chi | en |
dc.contributor.author | 紀秉松 | zh_TW |
dc.date.accessioned | 2021-06-15T04:17:43Z | - |
dc.date.available | 2009-12-29 | |
dc.date.copyright | 2009-12-29 | |
dc.date.issued | 2009 | |
dc.date.submitted | 2009-12-10 | |
dc.identifier.citation | [1] Federal Communications Commission, FCC 02-04, Section 15.515.15.521
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45392 | - |
dc.description.abstract | The goal of this thesis is to design and implement four power amplifiers, two in pHEMT and two in CMOS processes, including two X-band high efficiency power amplifiers, a 24 GHz balanced amplifier, and a K-band power amplifier.
The first part of the thesis presents a harmonic tuned power amplifier at X-band. Adding harmonic loading circuits at the output and the input of the transistor can improve the overall output power and power added efficiency of the power amplifier. The circuit is designed in 0.15-μm low-noise pHEMT technology and has a measured maximum PAE of 48.5% at 10.5 GHz. An abrupt flush of the drain current is obtained in measuring this amplifier, and the measurement phenomenon and mechanism of the abrupt flush of the drain current due to reverse gate current are also investigated in this part. The second part focuses on the design of high power amplifier at 24 GHz using 0.15-μm power pHEMT technology. Two 8 finger 800-μm devices are combined in a current method in the two-stage PA, and then using the balanced configuration combines two same two-stage PAs again. Considering the process variation of small capacitors in the circuit design, re-simulation results show good agreement with measurements. The re-design results indicate that the odd mode oscillation is illuminated and process variation only has less effect on the circuit. The third part shows an X-band power amplifier with the high PAE and the small chip size using 0.18-μm CMOS process. In order to obtain wide bandwidth at power and PAE performance, broadband output and input matching network are adopted in this power amplifier. From the measurements, the power amplifier obtained the best PAE of 25.7% and saturation output power of 23.8dBm at 9.5 GHz. Besides, this PA demonstrates the 1-dB power bandwidth from 7.8 to 11 GHz and the PAE insides this bandwidth all exceed 20%. To our knowledge, this is a power amplifier with the highest PAE, the smallest chip size to date in CMOS process at X-band. The final part presents a K-bnad high power amplifier with the wide power bandwidth implemented by 0.13-μm CMOS technology. Broadband output power matching and broadband input conjugate matching lead to good power and PAE performances at the designed band. This PA achieves a measurement saturation output power of 18.6 dBm at 24 GHz with a power bandwidth of 6.5 GHz, and the PAE all exceeds 10% at this bandwidth. To our knowledge, this is a power amplifier with the widest power bandwidth and high saturation output power to date in CMOS process at K-band. Index Terms—power amplifier (PA), X-band, K-band, pHEMT, CMOS, monolithic microwave integrated circuit (MMIC), high efficiency, high power, reverse gate current, wide power bandwidth. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T04:17:43Z (GMT). No. of bitstreams: 1 ntu-98-R96942014-1.pdf: 9323203 bytes, checksum: 2a457f5339b47b24d12726d7f6f9e9eb (MD5) Previous issue date: 2009 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 iii ABSTRACT v CONTENTS vii LIST OF FIGURES ix LIST OF TABLES xvii Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 2 1.2.1 X-band Power Amplifier 2 1.2.2 K-band Power Amplifier 4 1.3 Contributions 7 1.4 Thesis Organization 8 Chapter 2 Design of A 10 GHz Power Amplifier in 0.15-μm Low-Noise HEMT process 9 2.1 Introduction 9 2.2 10 GHz Power Amplifier Circuit Design 11 2.3 Experimental Results 23 2.4 Summary 37 Chapter 3 A 24 GHz Power Amplifier Using 0.15-μm pHEMT Technology 40 3.1 Introduction 40 3.2 Design of a 24 GHz Power Amplifier Using 0.15-μm power pHEMT Process 42 3.3 Experimental Results 57 3.4 Summary 76 Chapter 4 X-band CMOS Power Amplifier Design 79 4.1 Introduction 79 4.2 X-band Power Amplifier Circuit Design 80 4.3 Experimental Results 90 4.4 Summary 96 Chapter 5 K-band CMOS Power Amplifier Design 99 5.1 Introduction 99 5.2 K-band Power Amplifier Circuit Design 100 5.3 Experimental Results 110 5.4 Summary 115 Chapter 6 Conclusion 118 REFERENCE 120 | |
dc.language.iso | en | |
dc.title | 高速電子遷移率電晶體及互補式金氧半場效電晶體之微波功率放大器之研究 | zh_TW |
dc.title | Research of HEMT and CMOS Microwave Power Amplifier | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃天偉,林坤佑,蔡作敏 | |
dc.subject.keyword | 功率放大器(PA),X頻段,K頻段,高速電子遷移率電晶體(pHEMT),互補式金氧半場效電晶體(CMOS),微波單晶積體電路(MMIC),高效率,高功率,反向閘級電流,功率寬頻, | zh_TW |
dc.subject.keyword | power amplifier (PA),X-band,K-band,pHEMT,CMOS,monolithic microwave integrated circuit (MMIC),high efficiency,high power,reverse gate current,wide power bandwidth, | en |
dc.relation.page | 128 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2009-12-10 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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