請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45103
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 顏溪成 | |
dc.contributor.author | Yi-Hsiu Chen | en |
dc.contributor.author | 陳怡秀 | zh_TW |
dc.date.accessioned | 2021-06-15T04:04:36Z | - |
dc.date.available | 2013-02-24 | |
dc.date.copyright | 2010-02-24 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-02-10 | |
dc.identifier.citation | 參考文獻
Ahn, Y., Yoon, J. Y., Baek, C. W. and Kim, Y. K., “Chemical Mechanical Polishing by Colloidal Silica-based Slurry for Micro-scratch Reduction,” Wear, 257, (2004) 785-789. Assiongbon, K. A., Emery, S. B., Pettit, C. M., Babu, S. V. and Roy, D., “Chemical Roles of Peroxide-based Alkaline Slurries in Chemical-mechanical Polishing of Ta : Investigation of Surface Reactions Using Time-resolved Impedance Spectroscopy,” Materials Chemistry and Physics, 86, (2004) 347-357. Assiongbon, K. A., Emery, S. B., Gorantla, V. R. K., Babu, S. V. and Roy, D., “Electrochemical Impedance Characteristics of Ta/Cu Contact Regions in Polishing Slurries Used for Chemical Mechanical Planarization of Ta and Cu : Considerations of Galvanic Corrosion,” Corrosion Science, 48, (2006) 372-388. Atanassova, E. and Spassov, D., “X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si,” Applied Surface Science, 135 (1998) 71-82. Bard, A. J. and Faulkner, L. R., Electrochemical Methods Fundamentals and Applications, 2nd ed., John Wiley & Sons, New York (2001). Babu, S. V., Li, Y. and Jindal, A., “Chemical Mechanical Planarization of Cu and Ta,” Journal of the Minerals, Metals and Materials Society, (2001) 50-52. Barsoukov, E. and Macdonald, J. R., Impedance Spectroscopy: Theory, Experiment, and Applications, 2nd ed., Wiley-Interscience (2005). Bohr, M. T., “Interconnect Scaling - the Real Limiter to High Performance ULSI,” Technical Digest - International Electronic Devices Meeting, (1995) 241-244. Carpio, R., Farkas, J. and Jairath, R., “Initial Study on Copper CMP Slurry Chemistries,” Thin Solid Films, 266, (1995) 238-244. Chang, C. Y. and Sze, S. M., ULSI Technology, McGraw - Hill, New York Chapter 8 (1996). Chaug, S. C., Shieh, J. M., Huang, C. C., Dai, B. T. and Feng, M. S., “Patten Effect on Planarization Efficiency of Cu Electropolishing,” Japanese Journal of Applied Physics, 41, (12) (2002) 1. Chaug, S. C., Shieh, J. M., Dai, B. T., Feng, M. S., Li, Y. H., Shih, C. H., Tsai, M. H., Shue, S. L. and Liang, R. S., “Superpolishing for Planarizating Copper Damascene Interconnects,” Electrochemical and Solid-State Letters, 6, (5) (2003) G72-74. Chen, J. C. and Tsai, W. T., “Chemical Mechanical Polishing Behavior of Tantalum in Slurries Containing Citric Acid and Alumina,” Surface &Coating Technology, 185, (2004) 50-57. Chen Y. H., Tsai, T. H. and Yen, S. C., “Acetic Acid and Phosphoric Acid Adding to Improve Tantalum Chemical Mechanical Polishing in Hydrogen Peroxide-Based Slurry,” Microelectronic Engineering, 87, (2010) 174-179. Cheung, R., “Copper Interconnect Technology,” Applied Materials, AVS/CMP User Group Meeting, Santa Clara, CA, (2000). DeJule, R., Semiconductor International, 11, (1999) 54. Deshpande, S., Kuiry, S. C., Klimov, M., Obeng, Y. and Seal, S., “Chemical Mechanical Planarization of Copper : Role of Oxidants and Inhibitors,” Journal of the Electrochemical Society, 151, (11) (2004) G788-G794. Du, B. and Suni, I. I., “Mechanistic Studies of Cu Electropolishing in Phosphoric Acid Electrolytes,” Journal of the Electrochemical Society, 151, (6) (2004) C375-C378. Du, T., Tamboli, D. and Desai, V., “Electrochemical characterization of copper chemical mechanical polishing,” Microelectronic Engineering, 69, (1) (2003) 1-9. Eli, Y. E. and Starosvetsky, D., “Review on Copper Chemical Mechanical Polishing (CMP) and Post-CMP Cleaning in Ultra Large System Integrated(ULSI) – An Electrochemical Perspective,” Electrochimica Acta, 52, (2007) 1825-1838. Ernur, D., Kondo, S., Shamiryan, D. and Maex, K., “Investigation of Barrier and Slurry Effects on the Galvanic Corrosion of Copper,” Microelectronic Engineering, 64, (2002) 117-124. Gašparac, R., Martin, C. R. and Stupnišek-Lisac, E., “In Situ Studies of Imidazole and Its Derivatives as Copper Corrosion Inhibitors,” Journal of the Electrochemical Society, 147, (2) (2000) 548-551. Gileadi, E., Kirowa-Eisner, E. and Penciner, J., Interfacial Electrochemistry, Addison-Wesley Pub. Co. (1975). Gorantla, V. R. K., Emery, S. B., Pandija, S., Babu, S. V. and Roy, D., “Chemical Effects in Chemical Mechanical Planarization of TaN : Investigation of Surface Reactions in a Peroxide-based Alkaline Slurry Using Fourier Transform Impedance Spectroscopy,” Materials Letters, 59, (2005) 690-693. Gutmann, R. J., Steigerwald, J. M., You, L., Price, D. T., Neirynck, J., Duquette, D. J. and Murarka, S. P., “Chemical-Mechanical Polishing of Copper with Oxide and Polymer Interlevel Dielectrics,” Thin Solid Films, 270, (1995) 596-600. Hariharaputhiran, M., Zhang, J., Ramarajan, S., Keleher, J. J., Li, Y. and Babu, S. V., “Hydroxyl Radical Formation in H2O2 -Amino Acid Mixtures and Chemical Mechanical Polishing of Copper,” Journal of the Electrochemical Society, 147, (10) (2000a) 3820-3826. Hariharaputhiran, M., Li, Y., Ramarajan, S. and Babu, S. V., “Chemical Mechanical Polishing of Ta,” Electrochemical and Solid-State Letters, 3, (2) (2000b) 95-98. Holloway, K., Fryer, P. M., Cabral, C., Harper, Jr., J. M. E., Bailey, P. J. and Kelleher, K. H., “Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions,” Journal of Applied Physics, 71, (11) (1992) 5433-5444. Hong, Y., Devarapalli, V. K., Roy, D. and Babu, S. V., “Synergistic Roles of Dodecyl Sulfate and Benzotriazole in Enhancing the Efficiency of CMP of Copper,” Journal of the Electrochemical Society, 154, (6) (2007) H444-H453. Huo, J., Solanki, R. and Mcandrew, J., “Study of anodic layers and their effects on electropolishing of bulk and electroplated films of copper,” Journal of Applied Electrochemistry, 34, (2004a) 305-314. Huo, J., Solanki, R. and Mcandrew, J., “Electrochemiacal Planarization of Patterned Copper Films for Microelectronic Applications,” Journal of Materials Engineering and Performance, 13, (4) (2004b) 413-421. Janjam, S. V. S. B., Peddeti, S., Roy, D. and Babu, S. V., “Tartaric Acid as a Complexing Agent for Selective Removal of Tantalum and Copper in CMP,” Electrochemical and Solid-State Letters, 11, (12) (2008a) H327-H330. Janjam, S. V. S. B., Surisetty, C. V. V. S., Pandija, S., Roy, D. and Babu, S. V., “Oxalic Acid-based Slurries with Tunable Selectivity for Copper and Tantalum Removal in CMP,” Electrochemical and Solid-State Letters, 11, (3) (2008b) H66-H69. Jiang, Q. T., Faust, R., Lam, H. R. and Muchda, J., Proceedings of the International Interconnect Technology Conference, (1999) 125-127. Jindal, A. and Babu, S. V., “Effect of pH on CMP of Copper and Tantalum,” Journal of the Electrochemical Society, 151, (10) (2004) G709-G716. Jones, D. A., Principles and Prevention of Corrosion, 2nd ed., Prentice-Hall, NJ, (1996). June, L. McClean and Hudson, N. H., U.S. Pat. 4462861 (1984). Kaufman, F. B., Thompson, D. B., Broadie, R. E., Jaso, M. A., Guthrie, W. L., Pearson, D. J. and Small, M. B., “Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects,” Journal of the Electrochemical Society, 138, (11) (1991) 3460-3465. Kim, D. J., Kim, Y. T. and Park, J.W., “Nanostructured Ta-Si-N Diffusion Barriers for Cu Metallization,” Journal of Applied Physics, 82, 10 (1997) 4847. Kim, N. H., Lim, J. H., Kim, S. Y. and Chang, E. G., “Effects of Phosphoric Acid Stabilizer on Copper and Tantalum Nitride CMP,” Materials Letters, 57, (2003) 4601-4604. Kneer, E. A., Raghunath, C., Mathew, V., and Raghavan, S., “Electrochemical Measurements During The Chemical Mechanical Polishing of Tungsten Thin Films,” Journal of the Electrochemical Society, 144, (9) (1997) 3041-3049. Kondo, S., Sakuma, N., Homma, Y. and Ohashi, N., “Slurry Chemical Corrosion and Galvanic Corrosion during Copper Chemical Mechanical Polishing,” Japanese Journal of Applied Physics, 39, 1, 11 (2000) 6216-6222. Kuiry, S. C., Seal, S., Fei, W., Ramsdell, J., Desai, V. H., Li, Y., Babu, S. V. and Wood, B., “Effect of pH and H2O2 on Ta Chemical Mechanical Planarization,” Journal of the Electrochemical Society, 150, (1) (2003) C36-C43. Lee, H. J., Kwon, K. W., Ryu, C. and Sinclair, R., “Thermal Stability of a Cu/Ta Multilayer : An Intriguing Interfacial Reaction,” Acta Materialia, 47, (15) (1999) 3965-3975. Li, Y., Zhao, J., Wu, P., Lin, Y., Babu, S. V. and Li, Y., “Interaction Between Abrasive Particles and Films During Chemical-mechanical Polishing of Copper and Tantalum,” Thin Solid Films, 497, (2006) 321-328. Liu, F. Q., Chen, L., Duboust, A., Tsai, S., Manens, A., Wang, Y. and Hsu, W. Y., Materials Research Society, Symp. Proceedings, 867, (2005). Luo, Q., Campbell, D. R. and Babu, S. V., “Stabilization of Aluminum Slurry for Chemical-Mechanical Polishing of Copper,” Langmuir, 12, (1996) 3563-3566. Luo, Q., Campbell, D. R. and Babu, S. V., “Chemical-Mechanical Polishing of Copper in Alkaline Media,” Thin Solid Films, 311, (1997) 177-182. Luo, Q., Ramarajan, S. and Babu, S.V., “Modification of the Preston Equation for the Chemical-Mechanical Polishing of Copper,” Thin Solid Films, 335, (1998) 160-167. Lu, Z., Lee, S. H., Babu, S. V. and Matijevic, E., “The use of monodispersed colloids in the polishing of copper and tantalum,” Journal of Colloid and Interface Science, 261, (2003) 55-64. Mazaheri, A. R. and Ahmadi, G., “A Model for Effect of Colloidal Forces on Chemical Mechanical Polishing,” Journal of the Electrochemical Society, 150, (4) (2003) G233-239. Min, K. H., Chun, K. C. and Kim, K. B., “Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization,” Journal of Vacuum Science & Technology B, 14, (5) (1996) 3263-3269. Moulder, J. F., Chastain, J. and King, R. C., Handbook of X-Ray Photoelectron Spectroscopy Physical Electronics and Minn. Eden Prairie, (1995) 171. Muller R. S. and Kamins, T. I., Device Electronics for Integrated Circuits, 2nd ed., John Wiley & Sons, New York, (1986) 1-56. Murarka, S. P. and Hymes, S. W., Critical Reviews in Solid State and Materials Science, 20, (2) (1995) 87-124. Newman, J. S., Electrochemical Systems, 3rd ed., John wiley, N. J. (2004). Nguyen, V. H., Hof, A. J., Kranenburg H. V., Woerlee, P. H. and Weimar, F., “Copper Chemical Mechanical Polishing Using a Slurry-free Technique,” Microelectronic Engineering, 55, (2001) 305-312. Padhi, D., Yahalom, J., Gandikota, S. and Dixit, G., “Planarization of Copper Thin Films by Electropolishing in Phosphoric Acid for ULSI Applications,” Journal of the Electrochemical Society, 150, (1) (2003) G10-G14. Pandija, S., Roy, D. and Babu, S. V., “Chemical Mechanical Planarization of Copper Using Abrasive-free Solutions of Oxalic acid and Hydrogen Peroxide,” Materials Chemistry and Physics, 102, (2007) 144-151. Park, Y. J., Andleigh, V. K. and Thompson, C. V., “Simulations of Stress Evolution and the Current Density Scaling of Electromigration-induced Failure Times in Pore and Alloyed Interconnects,” Journal of Applied Physics, 85, (7) (1999) 3546 . Pettit, C. M. and Roy, D., “Role of Iodate Ions in Chemical Mechanical and Electrochemical Mechanical Planarization of Ta Investigated Using Time-resolved Impedance Spectroscopy,” Materials Letters, 59, (2005) 3885-3889. Pourbaix, M., Atlas of Electrochemical Equilibria in Aqueous Solutions, Pergamon Press, London (1965). Ryu, C., Lee, H., Kwon, K. W., Loke, A. L. S. and Wong, S. S., “Barriers for Copper Interconnections,” Solid State Technology, 42, (4) (1999) 53-56. Sato, S., Yasuda, Z., Ishihara, M., Komai, N., Ohtorii, H., Yoshio, A., Segawa,, Y., Horikoshi, H., Ohoka, Y., Ta., K., Tajahashi, S. and Nogami, T., Paper presented at IEDM, Washington, DC (2001) 84. Song, M. G., Lee, J. H., Lee, Y. G. and Koo, J. H., “Stabilization of Gamma Alumina Slurry for Chemical Mechanical Polishing of Copper,” Journal of Colloid and Interface Science, 300, (2006) 603-611. Stavreva, Z., Zeidler, D., Plotner, M. and Drescher, K., “Characteristic in Chemical-Mechanical Polishing of Copper: Comparison of Polishing Pads,” Applied Surface Science, 108, (1997a) 39-44. Stavreva, Z., Zeidler, D., Plotner, M. and Drescher, K., “Influence of Process Parameters on Chemical-Mechanical Polishing of Copper,” Microelectronic Engineering, 37/38, (1997b) 143-149. Steigerwald, J. M., Murarka, S. P. and Gatmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Son, New York (1997). Steigerwald, J. M., Murarka, S. P., Gutmann, R. J. and Duquette, D. J., “Chemical Processes in the Chemical Mechanical Polishing of Copper,” Materials Chemistry and Physics, 41, (1995) 217-228. Steinbruchel, C., “Patterning of Copper for Multilevel Metallization: Reactive Ion Etching and Chemical-Mechanical Polishing,” Applied Surface Science, 91, (1995) 139-146. Tamboli, D., Banerjee, G. and Waddell, M., “Novel Interpretations of CMP Removal Rate Dependencies on Slurry Particle Size and Concentration,” Electrochemical and Solid-State Letters, 7, (10) (2004) F62-F65. Tamilmani, S., Huang, W. and Rahavan, S., “Galvanic Corrosion Between Copper and Tantalum under CMP Conditions,” Journal of the Electrochemical Society, 153, (2006) F53-F59. Tsai, T. H. and Yen, S. C., “Localized Corrosion Effects and Modifications of Acidic and Alkaline Slurries on Copper Chemical Mechanical Polishing,” Applied Surface Science, 210, (2003) 190-205. Tsai, T. H., Wu, Y. F. and Yen, S. C., “A Study of Copper Chemical Mechanical Polishing in Urea-hydrogen Peroxide Slurry by Electrochemical Impedance Spectroscopy,” Applied Surface Science, 214, (2003) 120-135. Tsai, T. H., Wu, Y. F. and Yen, S. C., “Glycolic Acid in Hydrogen Peroxide-based Slurry for Enhancing Copper Chemical Mechanical Polishing,” Microelectronic Engineering, 77, (2005) 193-203. Velden, P. van der, “Chemical Mechanical Polishing with Fixed Abrasives Using Different Subpads to Optimize Wafer Uniformity,” Microelectronic Engineering, 50, (2000) 41-46. Wang, M. T., Tsai, M. S., Liu, C., Tseng, W. T., Chang, T. C. and Chen, M. C., “Effects of Corrosion Environments on the Surface Finishing of Copper Chemical Mechanical Polishing,” Thin Solid Films, 308, (1997) 518-522. Wang, Y. L., Liu, C., Feng, M. S. and Tseng, W. T., “A Modified Multi-Chemicals Spray Cleaning Process for Post-CMP Cleaning Application,” Materials Chemistry and Physics, 52, (1998) 23-30. Whitman, C., Moslehi, M. M., Paranjpe, A., Velo, L. and Omstead, T., “Ultralarge scale integrated metallization and interconnects,” Journal of Vacuum Science & Technology A, 17, (1999) 1893. Wreschka, P., Hernandez, J., Oehrlein, G. S., Negrych, J. A., Haag, G., Rau, P. and Currie J. E., “Development of a Slurry Employing a Unique Silica Abrasive for the CMP of Cu Damascene Structures,” Journal of the Electrochemical Society, 148, (6) (2001) G321-G325. Xiao, H., Introduction to Semiconductor Manufacturing Technology, Prentice-Hall, NJ (2001). Yih, P. H., Wang, D. H. and Chiao, S. H., “Stress Free Cu Electropolishing,” ACM Research, Inc. Zeidler, D., Stavreva, Z., Plotner, M. and Drescher, K., “Characterization of Cu Chemical Mechanical Polishing by Electrochemical Investigations,” Microelectronic Engineering, 33, (1997a) 259-265. Zeidler, D., Stavreva, Z., Plotner, M. and Drescher, K., “The Interaction between Different Barrier Metals and the Copper Surface during the Chemical-Mechanical Polishing,” Microelectronic Engineering, 37/38, (1997b) 237-243. Zheng, J. P., Klug, B. K. and Roy, D., “Electrochemical Investigation of Surface Reactions for Chemical Mechanical Planarization of Tantalum in Oxalic Acid Solutions,” Journal of the Electrochemical Society, 155, (5) (2008) H341-H350. 汪建民,材料分析,中國材料科學學會 (1998)。 黃伯榮,烷基矽烷自組裝層於ITO薄膜之電化學特性及其於蝕刻製程之應用,台大化工所碩士學位論文 (2009)。 張有義,郭蘭生,膠體與界面化學入門,高立圖書公司 (2001)。 蔡子萱,化學機械研磨鍍層與其電化學特性之研究,台大化工所碩士學位論文 (1999)。 蔡子萱,化學機械研磨銅之研磨液與研磨模式研究,台大化工所博士學位論文 (2003)。 鮮祺振,金屬腐蝕膜特性探討,財團法人徐氏基金會 (1998)。 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45103 | - |
dc.description.abstract | 超大型積體電路(ULSI)發展下,化學機械研磨(Chemical Mechanical Polishing, CMP)已成為提昇銅製程(Cu Process)效能的關鍵技術。雖然研磨銅的研究與應用目前已漸趨成熟完善,然而受限於銅製程上常必須藉由阻障層的使用以防止銅擴散入介電層中,因此快速磨銅後會面臨異質材料間的研磨選擇率控制等問題,又成為銅製程之另一研發重點。本研究選擇研磨目前被認為具潛力的阻障層材料-鉭系(Ta) ,探討不同研磨液組成對Ta CMP效能的影響。利用直流極化曲線與開環電位等電化學量測,探討了包括表面鈍化、腐蝕等反應以及其與機械作用間的關係,再利用交流阻抗技術分析Ta在不同研磨液組成中的反應機制,並架構其等效電路。原子力學顯微鏡(AFM)與X光光電子分光儀(XPS)則被採用作為研磨前後表面平坦度和組成成分的分析。實驗結果顯示,Ta在不同氧化劑系統表面皆自然產生鈍化層阻止進一步的溶除,在單純氧化劑研磨液中,化學溶除速率過小,不利阻障層的移除。選擇添加劑如氨水、草酸、甘胺酸和甘醇酸等皆可藉由與Ta及其氧化物的錯合作用,加速阻障層的溶除速率。實驗結果亦顯示,在過氧化氫研磨液系統中添加醋酸和磷酸,醋酸和磷酸會以類似吸附作用附著於待磨表面改變其表面狀態,有效延遲Ta表面鈍化成緻密Ta2O5的時間,使研磨表面有較長時間處在較容易腐蝕和機械移除的狀態,而研磨狀態下,腐蝕電流密度都有大幅增加的趨勢,且磨後電位降也變大。交流阻抗分析的結果證實醋酸和磷酸的添加改變了鉭和研磨液界面的反應機制,磨後的反應阻抗的下降代表增進了表面鈍化膜移除的效率,AFM的實驗結果亦顯示分別在醋酸和磷酸添加的研磨液系統,其膜後表面粗糙度可下降至16.21 和13.81nm。此外,硬度較低的研磨粒子如SiO2,可藉由其與Ta的反應性,得到較佳的研磨效能。 | zh_TW |
dc.description.abstract | In ULSI development, chemical mechanical polishing (CMP) has become the key technique that can help achieve global planarity and enhance the efficiency of the Cu metallization process. The Cu CMP process is constrained by the deposition of barriers between Cu and the dielectric layer, which is carried out to prevent Cu diffusion into dielectrics. Thus far, the process has problems related to polishing rate selectivity and compatibility between different materials, which then becomes another significant issue of the process. Tantalum (Ta) has been considered the barrier material with the greatest potential. In this study, the effects of slurry compositions on Ta CMP were investigated. By performing electrochemical measurements such as polarization curves, open-circuit potentials and impedance spectroscopy, the slurry compositions and electrochemical characteristics during CMP were discussed; further, surface morphological analysis after CMP was carried out by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The experimental results showed that Ta is difficult to polish mechanically because of the formation of the hard oxide, Ta2O5, on its surface in various oxidant slurry systems. Ta dissolution rate could be enhanced by adding additives such as ammonia, oxalic acid, glycine and glycolic acid due to the chelating effects. The experimental results also indicated that CH3COOH and H3PO4 could be adsorbed on the surface that is to be polished in order to modify the surface status; in particular, the time taken for the Ta surface to be passivated into dense Ta2O5 would be effectively increased so that the surface could remain for a longer time in a status where it could be easily corroded and easily removed. The corrosion current density and the potential drop both increased when CH3COOH or H3PO4 weas added to slurries. The impedance study also confirmed that the addition of CH3COOH and H3PO4 changed the reaction mechanism between Ta and the slurries. The decrease in the reaction impedances during CMP was indicative of the enhanced removal efficiency. In addition, lower surface roughness after CMP could be achieved; in this study, surface roughness of 16.21 and 13.81 nm were achieved when CH3COOH and H3PO4 were added to slurries, respectively. Finally, SiO2 abrasives although with low hardness could still achieve good removal performance due to the interaction between surface functional group and Ta. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T04:04:36Z (GMT). No. of bitstreams: 1 ntu-99-F90524057-1.pdf: 6759126 bytes, checksum: cc6bfbabdb8106cb312fefa80ec654fc (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | 摘要 I
英文摘要 II 目錄 IV 圖表目錄 VII 第一章 緒論 1 1-1 銅導線製程的發展與阻礙 1 1-2 阻障層金屬的引進與發展 3 1-3 化學機械研磨介紹 4 1-4 兩階段銅導線化學機械研磨的介紹與低應力的發展趨勢7 1-5 研究動機 9 第二章 文獻回顧 24 2-1 化學機械研磨與Cu CMP之發展演進的文獻回顧 26 2-2 Ta CMP之發展演進的文獻回顧 19 2-3 其他相關化學機械研磨之行為研究 30 第三章 理論分析與技術 37 3-1 三極電化學量測系統 37 3-2 腐蝕動力學-直流極化曲線理論 38 3-2-1 極化曲線-電位與電流的關係 38 3-2-2 腐蝕電化學理論 41 3-2-3 表面鈍化現象 43 3-2-4 極化曲線的變化趨勢 44 3-2-5 腐蝕行為表面開環電位量測 46 3-3 金屬腐蝕熱力學-Pourbaix diagram 46 3-4 交流阻抗分析 48 3-4-1 交流阻抗理論推導 49 3-4-2 金屬腐蝕鈍化之等效電路推導 57 3-5 表面電位量測 59 第四章 實驗設備與方法 77 4-1 阻障層化學機械研磨的實驗程序與理論 77 4-1-1 實驗試片前處理 77 4-1-2 研磨液配製與研磨墊處理 77 4-1-3 金屬研磨速率的量測 78 4-1-4 極化曲線、開環電位與腐蝕動力學參數的量測 79 4-1-5 表面電位的量測 79 4-1-6 交流阻抗分析 80 4-1-7 研磨後的表面分析 81 4-2 實驗裝置、儀器、藥品及耗材 85 4-2-1 實驗裝置 85 4-2-2 設備與儀器 86 4-2-3 藥品與耗材 87 第五章 實驗結果與討論 91 5-1 不同氧化劑研磨液系統 91 5-1-1 H2O2-based 研磨液系統 91 5-1-2 NH4NO3-based研磨液系統 94 5-1-3 U-H2O2-based研磨液系統 97 5-1-4 抑制劑HBTA添加對移除選擇率的作用 99 5-1-5 表面電位的量測 100 5-2 不同有機酸添加劑對Ta CMP的作用 101 5-2-1 直流極化曲線的量測 102 5-2-2 研磨後表面平坦度的量測 103 5-3 磷酸和醋酸添加劑對Ta CMP的作用 104 5-3-1 直流極化曲線的量測 104 5-3-2 開環電位的量測 106 5-3-3 交流阻抗分析 106 5-3-4 磨後表面分析 108 5-4 不同研磨粒子對Ta CMP的作用 109 第六章 結論 165 符號說明 167 參考文獻 170 | |
dc.language.iso | zh-TW | |
dc.title | 化學機械研磨阻障層鉭與其電化學特性的研究 | zh_TW |
dc.title | The Study on Chemical Mechanical Polishing of Barrier Metal Tantalum and Its Electrochemical Characteristics | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 何國川,諶玉真,呂幸江,尹庚鳴,王孟菊 | |
dc.subject.keyword | 化學機械研磨,阻障層,鉭,研磨液,電化學量測, | zh_TW |
dc.subject.keyword | CMP,Barrier,Slurry,Tantalum,Electrochemical measurement, | en |
dc.relation.page | 178 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-02-10 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-99-1.pdf 目前未授權公開取用 | 6.6 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。