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DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄(Hao-Hsiung Lin) | |
dc.contributor.author | Jang-Hsuan Chu | en |
dc.contributor.author | 朱讓宣 | zh_TW |
dc.date.accessioned | 2021-06-15T04:02:39Z | - |
dc.date.available | 2013-02-24 | |
dc.date.copyright | 2010-02-24 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-02-11 | |
dc.identifier.citation | [1] T. M. Quist, R. H. Radiker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, and H. J. Zeigler, “Semiconductor maser of GaAs, ” Appl. Phys. Lett., vol. 22, pp. 91-92, 1962.
[2] R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Slotys, and R. O.117 Carlson, “Coherent light emission from GaAs junctions,” Phys. Rev.Lett., vol. 9, pp. 366-368, 1962. [3] Zh. I. Alferov, V. M. Andreev, E. L. Portnoi, and M. K. Trukan, “ AlAs–GaAs heterojunction injection lasers with a low room-temperature threshold,” Fiz. Tekh. Poluprovodn., vol. 3, pp.1328-1331, 1969. [4] Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P.Morozov, E. L. Portnoi, and V. G. Trofim, “Effect of heterostructure parameters on the laser threshold current and the realization of continuous generation at room temperature,” Fiz. Tekh. Poluprovodn., vol. 4, pp. 1826-1830, 1970. [5] J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegmann, and W. A. Nordland, Jr., “Laser oscillations from quantum states in very thin GaAs–AlxGa1-xAs–GaAs multilayer structures,” Appl. Phys. Lett., vol. 26, pp. 463-465, 1975. [6] R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., E. A. Rezek, and R.Chin, “Room-temperature laser operation of quantum-well GaAs-AlxGa1-xAs- GaAs laser diodes grown by metalortanic chemical vapor deposition,” Appl. Phys. Lett., vol. 32, pp. 295-297, 1978. [7] W. T. Tsang, “Extremely low threshold (Al,Ga)As graded-indexwaveguide separate confinement heterostructure lasers grown by molecular beam epitaxy,” Appl. Phys. Lett., vol. 40, pp. 217-219, 1982. [8] N. Chand, E. E. Becker, J. P. van der Ziel, S. N. G. Chu, and N. K.118 Dutta, “Excellent uniformity and very low (<50 A/cm2 ) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate,” Appl. Phys. Lett., vol. 58, pp. 1704-1706, 1991. [9] N. N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A. E. Zhukov, M. V. Maximov, Zh. I. Alferov, and J. A.Lott, “Quantum-Dot Heterostructure Lasers,” IEEE. J. Select.Topics Quantum Electron., vol. 6, pp. 439-451, 2000. [10] M. Asada, Y. Miyamoto, and Y Suematsu, “Gain and the Threshold of Three-Dimensional Quantum-Box Lasers,” IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, 1986. [11] M. Kondow, T. Kitatani, and K. Uomi, “GaInNAs: A novel material for long-wavelength semiconductor lasers,” IEEE J. Sel. Topics. Quantum Electron. 3, p719, 1997. [12] D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, “1.3μm room-temperature GaAs-based quantum-dot lasers,” Appl. Phys. Lett. 73, p2564, 1998. [13] T. Anan, K. Nishi, S. Sugou, M. Yamada, K. Tokutome and A. Gomyo, “GaAsSb: A novel material for 1.3μm VCSELs,” Electronics Lett. 34, p2127, 1998. [14] D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, “1.3μm room-temperature GaAs-based quantum-dot lasers,” Appl. Phys. Lett. 73, p2564, 1998. [15] A. F. Tsatsul’nikov, A. R. Kovsh, A. E. Zhukov, Yu. M. Shernyakov, Yu. G. Musikhin, V. M. Ustinov, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov, A. M. Mintairov, J. L. Merz, N. N. Ledentsov, D. Bimberg, “Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm,” J. Appl. Phys., 88, p6272, 2000. [16] R. L. Sellin, Ch. Ribbat, M. Grundmann, N. N. Ledentsov, and D. Bimberg, “Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers,” Appl. Phys. Lett. 78, p1207, 2001. [17] N. T. Yeh, W. S. Liu, S. H. Chen, P. C. Chiu, and J. I. Chyi, “InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy,” Appl. Phys. Lett. 80, p535, 2002. [18] O. B. Shchekin and D. G. Deppe, “1.3μm InAs quantum dot laser with T0=161K from 0 to 80℃,” Appl. Phys. Lett. 80, p3277, 2002. [19] N. Yamamoto, Kouichi Akahane, Shinichirou Gozu and Naoki Ohtani, “Over 1.3 µm continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates,” Appl. Phys. Lett., vol. 86, 203118, 2005. [20] P. Sundgren, R. M. von Wurtemberg, J. Berggren, M. Hammar, M. Ghisoni, V. Oscarsson, E. Odling and J. Malmquist, “High-performance 1.3 μm InGaAs vertical cavity surface emitting lasers,” Electron. Lett., vol. 39, no. 15, pp. 1128-1129, 2003. [21] H. Shimizu, C. Setiagung, M. Ariga, Y. Ikenaga, K. Kumada, T. Hama, N. Ueda, N. Iwai and A. Kasukawa, “1.3 μm Range GaInNAsSb–GaAs VCSELs,” IEEE J. Sel. Top. Quantum Electron., vol. 9, no. 5, pp. 1214-1219, 2003. [22] 張福裕, “Growth of GaAs-based 1.3 μm InAs/InGaAs Quantum Dots and Lasers by Molecular Beam Epitaxy,” 國立台灣大學電子工程學研究所 博士論文, 2004. [23] 廖剛華, “Fabrication and characterization of GaAsSb/GaAs type-II quantum well lasers,” 國立台灣大學電子工程學研究所 碩士論文, 2004. [24] 李騏亘, “Study on InAs/InGaAs/GaAs Quantum dot lasers,” 國立台灣大學電子工程學研究所 碩士論文, 2005. [25] 林佑儒, “Growth of III-V Compound Semiconductor Quantum Structures and Devices by Gas-Source Molecular Beam Epitaxy,” 國立台灣大學電子工程學研究所 博士論文, 2009. [26] Y. Arakawa and H. Sakaki, “Multidimensional quantum well lasers and temperature dependence of its threshold current,” Appl. Phys.Lett., vol. 40, pp. 939–941, 1982. [27] M. Sugawara, “Self-Assembled InGaAs/GaAs Quantum Dots. ,” Academic Press, 1999. [28] I.R. Sellers, H.Y.Liu, K.M. Groom, D.T. Childs, D.Robbins, T.J. Badcock, M. Hopkinson, D.J. Mowbary and M.S. Skolnick,”1.3μm InAs/GaAs multiplayer quantum-dot laser with extremely low room-temperature threshold current density,” Electron. Lett., vol. 40, pp. 1412-1413, 2004. [29] M. Asada, Y. Miyamoto, and Y. Suematsu, “Gain and the threshold of three-dimensional quantum-box lasers,” IEEE J. Quantum Electron., vol. 22 pp. 1915-1921, 1986. [30] S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov,”The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers,” Appl. Phys. Lett., vol. 85, pp. 5164–5166, 2004. [31] I.I. Novikov, N.Yu Gordeev, L. Ya. Karachinskii, M.V. Maksimov, Yu. M. Shernyakov, A.R. Kovsh, I. L. Krestnikov, A.V. Kozhukhov, S.S. Mikhrin and N.N. Ledentsov,”Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers,” Semicond., vol 39, pp. 477-480, 2005. [32] O. Blum and J. F. Klem, “Characteristic of GaAsSb single-quantum-well-lasers emitting near 1.3μm,” IEEE Photon. Technol. Lett., vol. 12, no. 7, pp. 771-773, 2000. [33] P. W. Liu, G. H. Liao and H. H. Lin, “1.3μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy,” Electron. Lett., vol. 40, no. 3, pp. 177-179, 2004. [34] S. W. Ryu and P. D. Dapkus, “Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapor deposition on GaAs substrate,” Electron. Lett., vol. 36, no. 16, pp. 1387-1388, 2000. [35] P. W. Liu, G. H. Liao, and H. H. Lin, “1.3μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy,” Electron. Lett., vol.40, pp.177-178, 2004. [36] K. Akahane, N. Yamamoto, and N. Ohtani, “Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates,” Physica E, vol.21, pp.295-299, 2004. [37] J. M. Ripalda, D. Granados, Y. González, A. M. Sánchez, S. I. Molina, and J. M. García, “Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb,” Appl. Phys. Lett., vol. 87, pp.202108, 2005. [38] H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, F. Suarez, J. S. Ng, M. Hopkinson, and J. P. E. David, “Room-temperature 1.6μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer,” J. Appl. Phys., vol.99, pp.046104, 2006. [39] M. Yamada, T. Anan, K. Tokutome, A. Kamei, K. Nishi, and S. Sugou, “Low-Threshold Operation of 1.3-μm GaAsSb Quantum-Well Lasers Directly Grown on GaAs Substrates,” IEEE Photo. Tech. Lett., vol. 12, NO. 7, 2000. [40] H. Kissel, U. Müller, C. Walther, and W. T. Masselink, “Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage,” Phys. Rev. B, vol.62, pp.7213-7218, 2000. [41] H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, and H. Ishikawa, “Lasing characteristic of self-formed quantum-dot lasers with multistacked dot layer,” IEEE Journal of selected topics in quantum electronics, vol. 3, No. 2, 1997. [42] K. C. Hall, K. Gündoğdu, T. F. Boggess, O. B. Shchekin, D. G. Deppe, “Carrier and Spin Dynamics in Charged Quantum Dots,” Proceedings of SPIE, Vol. 5361, pp. 76-87, 2004. [43] S. R. Johnson, S. Chaparro, J. Wang, N. Samal, Y. Cao, Z. B. Chen, C. Navarro, J. Xu, S. Q. Yu, David J. Smith, C. Z. Guo, P. Dowd, W. Braun, and Y. H. Zhang, “GaAs-substrate-based long-wave active materials with type-II band alignment,” J. Vac. Sci. Technol. B, vol.19, pp.1501-1504, 2001. [44] P. Vashishta and R. K. Kalia , “Universal behavior of exchange-correlation energy in electron-hole liquid.” Phy. Rev. B , 25, 10, 6492, 1982. [45] S. Das Sarma, R. Jalabert, and S. R. Eric Yang , “Band-gap renormalization in semiconductor quantum wells.” Phy. Rev. B , 41, 12, 8288, 1990. [46] S. H. Park, J. I. Shim, K. Kudo, M. Asada, and S. Arai , “Band gap shrinkage in GaInAs/GaInAsP/InP multi-quantum well lasers.” J. Appl. Phys. 72, 1, 279, 1992. [47] E. Herrmann, P. M. Smowton, H. D. Summers, and J. D. Thomson, “Modal gain and internal optical mode loss of a quantum dot laser,” Appl. Phy. Lett. Vol. 77, 2000. [48] H. Shimizu, S. Saravanan, J. Yoshida, S. Ibe, and N. Yokouchi, “Long-Wavelength Multilayered InAs Quantum Dot Lasers,” Jpn. J. Appl. Phys. vol. 46, No. 2, pp. 638–641, 2007. [49] D. Z. Garbuzov, R. U. Martinelli, H. Lee, P. K. York, R. J. Menna, J. C. Connolly, and S. Y. Narayan, “Ultralow-loss broadened-waveguide high-power 2 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45051 | - |
dc.description.abstract | 本論文使用氣態源分子束磊晶機成長砷化銦量子點結合銻砷化鎵/砷化鎵(銻成分30%)第二型量子井複合雷射元件,我們發現增加了量子點的複合結構,可以降低起振電流密度以及內部損耗,並提高內部量子效率、模態增益以及特徵溫度。我們認為元件特性的改善是由於在量子點內的電洞會穿隧到量子井,形成帶電荷的量子點將在量子點與量子井間產生位能波動,使得躍遷矩陣元素增加造成上述的結果;另外我們將複合結構中銻砷化鎵量子井的銻含量從原來的30%增加到34%,結果雖然會使得雷射元件放光波長由1200 nm略為延伸到1206 nm,但雷射元件的內部量子效率降低、起振電流和內部損耗增加、雷射的增益下降。我們再從雷射元件的室溫PL量測其個別的半高寬,發現銻含量從30%增加到34%時,其半高寬從94 nm擴大到113 nm,可能銻含量的增加造成量子井與量子點間位能波動的改變,使得雷射元件效能變差。 | zh_TW |
dc.description.abstract | In this study, GaAs0.7Sb0.3/GaAs type-II quantum well lasers with an adjacent InAs quantum dot layer have been fabricated by gas-source molecular beam epitaxy. We found that the composite structure can decrease the threshold current density and the internal loss, and enhance the internal quantum efficiency, modal gain and characteristic temperature. We believe that the hole in quantum dots will tunnel into the quantum well, and the charged quantum dots could result in a potential fluctuation between the quantum dots and quantum well. The local confinement resulting from the potential fluctuation enhances the optical transition element, resulting in the aforementioned good performances. Increasing the Sb content of the composite structure from 30% to 34% makes the laser emission wavelength slightly red shift from 1200 nm to 1206 nm. However, the quality of GaAsSb quantum well becomes worse. From the room temperature PL of the laser samples, we found that the FWHM broadens from 93 nm to 113 nm when the Sb content increases from 30% to 34%, indicating the change of potential fluctuation between the quantum well and quantum dot. This change could result in the degradation of laser performances. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T04:02:39Z (GMT). No. of bitstreams: 1 ntu-99-R96943087-1.pdf: 1794410 bytes, checksum: 5cdce8b4f5bfd7d0cd1fd61479ae899f (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | 目錄
中文摘要................................................................................................................I Abstract................................................................................................................III 目錄......................................................................................................................V 附表索引............................................................................................................VII 附圖索引.............................................................................................................IX 第一章 序論.......................................................................................................1 1.1 雷射的發展及應用......................................................................................1 1.2 砷化銦量子點結合銻砷化鎵/砷化鎵量子井結構介紹.............................4 1.3 論文架構......................................................................................................6 第二章 元件製程與量測方法.........................................................................11 2.1 雷射結構的成長........................................................................................11 2.2 寬面積邊射型雷射二極體製程................................................................12 2.3 量測系統架構............................................................................................16 第三章 結果與討論………………………………………………………….29 3.1 雷射樣品的光激發螢光頻譜分析………………………………………29 3.2 雷射樣品的變光激發強度螢光頻譜分析………………………………30 3.3 雷射樣品的變溫光激發螢光頻譜分析…………………………………30 3.4 雷射樣品的室溫量測結果與其特性之比較............................................32 3.5 雷射樣品的變溫量測結果與其特性之比較............................................38 第四章 結論………………………………………………………………….55 參考文獻……………………………………………………………………….57 附表索引 表2.1 銻砷化鎵量子井結合砷化銦量子點雷射結構C2420........................19 表2.2 砷化銦單層量子點雷射結構C2421....................................................20 表2.3 銻含量較高(Sb=0.34)的銻砷化鎵單層量子井雷射結構C2480…....21 表2.4 銻含量較高(Sb=0.34)之銻砷化鎵量子井結合砷化銦量子點雷射結 構C2481……………………………………………………………... 22 附圖索引 圖1.1 半導體雷射的發展時間圖......................................................................7 圖1.2 載子在塊材、量子井、量子線以及量子點中能階密度對能量關係圖............................................................................................................7 圖1.3 在傳統含矽光纖中波長與損耗的關係圖.............................................8 圖1.4 半導體化合物之能隙大小與晶格常數關係圖.....................................8 圖1.5 第一型量子井與第二型量子井之能隙比較圖.....................................9 圖2.1 寬面積雷射二極體製程流程圖............................................................23 圖2.2 雷射劈裂示意圖....................................................................................24 圖2.3 PL量測系統示意圖..............................................................................25 圖2.4 L-I量測系統示意圖..............................................................................26 圖2.5 EL量測系統示意圖..............................................................................27 圖3.1 元件的光激螢光光譜(photoluminescence,PL)圖.............................40 圖3.2 銻含量30%的複合結構樣品(C2420)在低溫下的變光激發強度之螢光頻譜………………………………………………………………..40 圖3.3 單層砷化銦量子點結構樣品(C2421)在低溫下的變光激發強度之螢光頻譜………………………………………………………………..41 圖3.4 銻含量為34%之銻砷化鎵單層量子井結構樣品(C2480)在低溫下的變光激發強度之螢光頻譜…………………………………………..41 圖3.5 銻含量為34%之複合結構樣品(C2481)在低溫下的變光激發強度之螢光頻譜……………………………………………………………..42 圖3.6 變光激發強度對元件C2420、C2421、C2480與C2481個別主要放光峰值能量之作圖…………………………………………………..42 圖3.7 銻含量30%的複合結構樣品(C2420)的變溫光激發螢光頻譜……..43 圖3.8 單層砷化銦量子點結構樣品(C2421)的變溫光激發螢光頻譜……..43 圖3.9 銻含量為34%之銻砷化鎵單層量子井結構樣品(C2480)的變溫光激發螢光頻譜…………………………………………………………..44 圖3.10 銻含量為34%之複合結構樣品(C2481)的變溫光激發螢光頻譜…44 圖3.11 元件在變溫下主要放光峰值對溫度作圖………………….……….45 圖3.12 C2420電激螢光光譜(electroluminescence,EL)圖............................45 圖3.13 C2420的PL與EL對照圖...................................................................46 圖3.14 C2421的PL與EL對照圖...................................................................46 圖3.15 C2421不同電流注入的EL變化圖.....................................................47 圖3.16 C2480的PL與EL對照圖...................................................................47 圖3.17 C2481的PL與EL對照圖...................................................................48 圖3.18 雷射元件C2420光功率對電流關係圖..............................................48 圖3.19 起振電流密度對元件之共振腔長度倒數關係圖..............................49 圖3.20 雷射樣品C2420、C2421、C2480與C2481的外部量子效率倒數對共振腔長度擬合圖..............................................................................49 圖3.21 C2420起振電流對總損耗作圖……………………………………..50 圖3.22 C2421起振電流對總損耗作圖..........................................................50 圖3.23 C2480起振電流對總損耗作圖……………………………………..51 圖3.24 C2481起振電流對總損耗作圖……………………………………..51 圖3.25 個別元件之起振電流對總損耗作圖..................................................52 圖3.26 C2420 L-I變溫曲線圖........................................................................52 圖3.27 四件雷射樣品在變化溫度下起振電流密度對溫度作圖..................53 | |
dc.language.iso | zh-TW | |
dc.title | 具有砷化銦量子點鄰近層的銻砷化鎵/砷化鎵第二型量子井及其在雷射的應用 | zh_TW |
dc.title | Studies on GaAsSb/GaAs type-II quantum well with an adjacent InAs quantum dot layer and its application to laser diodes | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 王智祥,毛明華(Ming-Hua Mao) | |
dc.subject.keyword | 量子點,量子井,銻砷化鎵,第二型,雷射, | zh_TW |
dc.subject.keyword | quantum dot,quantum well,GaAsSb,type-II,laser, | en |
dc.relation.page | 65 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-02-11 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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